PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • 2 kV ESD protection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits • Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V = 4.5 V; I = 500 mA; T = 25 °C - 290 380 mΩ DSon GS D j resistance TR2 (P-channel), Static characteristics R drain-source on-state V = -4.5 V; I = -400 mA; T = 25 °C - 670 850 mΩ DSon GS D j resistance TR1 (N-channel) V drain-source voltage T = 25 °C - - 20 V DS j V gate-source voltage -8 - 8 V GS ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 725 mA TR2 (P-channel) V drain-source voltage T = 25 °C - - -20 V DS j

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit V gate-source voltage -8 - 8 V GS ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - - -500 mA [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3 D2 drain TR2 G1 G2 4 S2 source TR2 1 2 3 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa262 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMGD290UCEA TSSOP6 plastic surface-mounted package; 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code [1] PMGD290UCEA YD% [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (N-channel) V drain-source voltage T = 25 °C - 20 V DS j V gate-source voltage -8 8 V GS PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 2 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 725 mA VGS = 4.5 V; Tamb = 100 °C [1] - 450 mA I peak drain current T = 25 °C; single pulse; t ≤ 10 µs - 3 A DM amb p Ptot total power dissipation Tamb = 25 °C [2] - 280 mW [1] - 320 mW T = 25 °C - 990 mW sp TR1 (N-channel), Source-drain diode IS source current Tamb = 25 °C [1] - 370 mA TR1 N-channel), ESD maximum rating VESD electrostatic discharge voltage HBM [3] - 2000 V TR2 (P-channel) V drain-source voltage T = 25 °C - -20 V DS j V gate-source voltage -8 8 V GS ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - -500 mA VGS = -4.5 V; Tamb = 100 °C [1] - -320 mA I peak drain current T = 25 °C; single pulse; t ≤ 10 µs - -2 A DM amb p Ptot total power dissipation Tamb = 25 °C [2] - 280 mW [1] - 320 mW T = 25 °C - 990 mW sp TR2 (P-channel), Source-drain diode IS source current Tamb = 25 °C [1] - -370 mA TR2 (P-channel), ESD maximum rating VESD electrostatic discharge voltage HBM [3] - 2000 V Per device Ptot total power dissipation Tamb = 25 °C [2] - 445 mW T junction temperature -55 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [3] Measured between all pins. PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 3 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa123 017aaa124 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 -75 -25 25 75 125 175 -75 -25 25 75 125 175 Tj(°C) Tj(°C) Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature aaa-007202 10 ID Limit RDSon = VDS/ID (A) 1 tp = 1 ms 10-1 DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 tp = 100 ms 10-2 10-1 1 10 102 VDS (V) I = single pulse DM Fig. 3. TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 4 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET aaa-007203 -10 ID Limit RDSon = VDS/ID (A) -1 tp = 1 ms -10-1 DC; Tsp = 25 °C tp = 10 ms DdrCa;in T mamobu n=t i2n5g °pCa;d 1 cm2 tp = 100 ms -10-2 -10-1 -1 -10 -102 VDS (V) I = single pulse DM Fig. 4. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel) Rth(j-a) thermal resistance in free air [1] - 390 445 K/W from junction to [2] - 340 390 K/W ambient R thermal resistance - - 130 K/W th(j-sp) from junction to solder point TR2 (P-channel) Rth(j-a) thermal resistance in free air [1] - 390 445 K/W from junction to [2] - 340 390 K/W ambient R thermal resistance - - 130 K/W th(j-sp) from junction to solder point Per device Rth(j-a) thermal resistance in free air [1] - - 300 K/W from junction to ambient [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 5 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 103 017aaa034 dutycycle=1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 10 0.01 1 10-3 10-2 10-1 1 10 102 103 tp(s) FR4 PCB, standard footprint Fig. 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa035 dutycycle=1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 10 0.01 1 10-3 10-2 10-1 1 10 102 103 tp(s) 2 FR4 PCB, mounting pad for drain 1 cm . Fig. 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 6 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 103 017aaa034 dutycycle=1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 10 0.01 1 10-3 10-2 10-1 1 10 102 103 tp(s) FR4 PCB, standard footprint Fig. 7. TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa035 dutycycle=1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 10 0.01 1 10-3 10-2 10-1 1 10 102 103 tp(s) 2 FR4 PCB, mounting pad for drain 1 cm Fig. 8. TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 7 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics V drain-source I = 250 µA; V = 0 V; T = 25 °C 20 - - V (BR)DSS D GS j breakdown voltage V gate-source threshold I = 250 µA; V = V ; T = 25 °C 0.5 0.75 0.95 V GSth D DS GS j voltage I drain leakage current V = 20 V; V = 0 V; T = 25 °C - - 1 µA DSS DS GS j V = 20 V; V = 0 V; T = 150 °C - - 10 µA DS GS j I gate leakage current V = 8 V; V = 0 V; - - 10 µA GSS GS DS -40 °C < T < 150 °C j V = -8 V; V = 0 V; - - -10 µA GS DS -40 °C < T < 150 °C j R drain-source on-state V = 4.5 V; I = 500 mA; T = 25 °C - 290 380 mΩ DSon GS D j resistance V = 4.5 V; I = 500 mA; T = 150 °C - 460 610 mΩ GS D j V = 2.5 V; I = 200 mA; T = 25 °C - 420 620 mΩ GS D j V = 1.8 V; I = 10 mA; T = 25 °C - 0.6 1.1 Ω GS D j g transfer conductance V = 10 V; I = 200 mA; T = 25 °C - 1.6 - S fs DS D j TR1 (N-channel), Dynamic characteristics Q total gate charge V = 10 V; I = 500 mA; V = 4.5 V; - 0.45 0.68 nC G(tot) DS D GS T = 25 °C Q gate-source charge j - 0.15 - nC GS Q gate-drain charge - 0.15 - nC GD C input capacitance V = 10 V; f = 1 MHz; V = 0 V; - 55 83 pF iss DS GS T = 25 °C C output capacitance j - 15 - pF oss C reverse transfer - 7 - pF rss capacitance t turn-on delay time V = 10 V; R = 250 Ω; V = 4.5 V; - 6 12 ns d(on) DS L GS R = 6 Ω; T = 25 °C t rise time G(ext) j - 4 - ns r t turn-off delay time - 86 172 ns d(off) t fall time - 31 - ns f TR1 (N-channel), Source-drain diode characteristics V source-drain voltage I = 300 mA; V = 0 V; T = 25 °C 0.48 0.77 1.2 V SD S GS j TR2 (P-channel), Static characteristics V drain-source I = -250 µA; V = 0 V; T = 25 °C -20 - - V (BR)DSS D GS j breakdown voltage PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 8 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit V gate-source threshold I = -250 µA; V = V ; T = 25 °C -0.5 -0.8 -1.3 V GSth D DS GS j voltage I drain leakage current V = -20 V; V = 0 V; T = 25 °C - - -1 µA DSS DS GS j V = -20 V; V = 0 V; T = 150 °C - - -10 µA DS GS j I gate leakage current V = 8 V; V = 0 V; - - 10 µA GSS GS DS -40 °C < T < 150 °C j V = -8 V; V = 0 V; - - -10 µA GS DS -40 °C < T < 150 °C j R drain-source on-state V = -4.5 V; I = -400 mA; T = 25 °C - 670 850 mΩ DSon GS D j resistance V = -4.5 V; I = -400 mA; T = 150 °C - 1.1 1.4 Ω GS D j V = -2.5 V; I = -200 mA; T = 25 °C - 1.2 1.5 Ω GS D j V = -1.8 V; I = -10 mA; T = 25 °C - 1.8 2.8 Ω GS D j g transfer conductance V = -10 V; I = -200 mA; T = 25 °C - 610 - mS fs DS D j TR2 (P-channel), Dynamic characteristics Q total gate charge V = -10 V; I = -400 mA; - 0.76 1.14 nC G(tot) DS D V = -4.5 V; T = 25 °C Q gate-source charge GS j - 0.28 - nC GS Q gate-drain charge - 0.18 - nC GD C input capacitance V = -10 V; f = 1 MHz; V = 0 V; - 58 87 pF iss DS GS T = 25 °C C output capacitance j - 21 - pF oss C reverse transfer - 12 - pF rss capacitance t turn-on delay time V = -10 V; R = 250 Ω; V = -4.5 V; - 18 36 ns d(on) DS L GS R = 6 Ω; T = 25 °C t rise time G(ext) j - 30 - ns r t turn-off delay time - 80 160 ns d(off) t fall time - 72 - ns f TR2 (P-channel), Source-drain diode characteristics V source-drain voltage I = -300 mA; V = 0 V; T = 25 °C -0.48 -0.84 -1.2 V SD S GS j PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 9 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 0.7 017aaa351 10-3 017aaa352 ID 4.5V (A0).6 2.5V VGS=1.6V ID 1.8V (A) 0.5 10-4 0.4 (1) (2) (3) 1.4V 0.3 10-5 0.2 1.2V 0.1 1.0V 0.0 10-6 0 1 2 3 4 0.00 0.25 0.50 0.75 1.00 1.25 VDS (V) VGS (V) T = 25 °C T = 25 °C; V = 5 V j j DS (1) minimum values Fig. 9. TR1; Output characteristics: drain current as a (2) typical values function of drain-source voltage; typical values (3) maximum values Fig. 10. TR1; Sub-threshold drain current as a function of gate-source voltage 017aaa353 017aaa354 2.0 2.0 RDSon (1) (2) (3) RDSon (Ω) (Ω) 1.5 1.5 1.0 1.0 (4) (1) 0.5 0.5 (5) (6) (2) 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 1 2 3 4 5 ID(A) VGS (V) T = 25 °C I = 400 mA j D (1) V = 1.3 V (1) T = 150 °C GS j (2) V = 1.4 V (2) T = 25 °C GS j (3) V = 1.6 V GS Fig. 12. TR1; Drain-source on-state resistance as a (4) V = 1.8 V GS function of gate-source voltage; typical values (5) V = 2.5 V GS (6) V = 4.5 V GS Fig. 11. TR1; Drain-source on-state resistance as a function of drain current; typical values PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 10 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa355 017aaa356 0.7 1.75 ID a (A) 0.6 1.50 0.5 1.25 0.4 0.3 1.00 0.2 (2) (1) 0.75 0.1 0.0 0.50 0.0 0.5 1.0 1.5 2.0 2.5 -60 0 60 120 180 VGS (V) Tj (°C) V > I × R DS D DSon Fig. 14. TR1; Normalized drain-source on-state (1) T = 25 °C j resistance as a function of junction (2) Tj = 150 °C temperature; typical values Fig. 13. TR1; Transfer characteristics: drain current as a function of gate-source voltage; typical values 1.25 017aaa357 102 017aaa358 VGS(th) (1) (V) 1.00 C (1) (pF) 0.75 (2) (2) 10 (3) 0.50 (3) 0.25 0.00 1 -60 0 60 120 180 10-1 1 10 102 Tj (°C) VDS (V) I = 0.25 mA; V = V f = 1 MHz; V = 0 V D DS GS GS (1) maximum values (1) C iss (2) typical values (2) C oss (3) minimum values (3) C rss Fig. 15. TR1; Gate-source threshold voltage as a Fig. 16. TR1; Input, output and reverse transfer function of junction temperature capacitances as a function of drain-source voltage; typical values PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 11 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa359 5 VGS VDS (V) 4 ID VGS(pl) 3 VGS(th) 2 VGS QGS1 QGS2 1 QGS QGD QG(tot) 017aaa137 0 0.0 0.1 0.2 0.3 0.4 0.5 Fig. 18. Gate charge waveform definitions QG (nC) I = 0.5 A; V = 10 V; T = 25 °C D DS amb Fig. 17. TR1; Gate-source voltage as a function of gate charge; typical values 017aaa360 017aaa363 0.7 -0.5 (IAS) ID -4.5V -2.5V -2.0V 0.6 (A) -0.4 VGS=-1.8V 0.5 -0.3 0.4 (1) (2) -1.6V 0.3 -0.2 0.2 -1.4V -0.1 0.1 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 -1 -2 -3 -4 VSD (V) VDS (V) V = 0 V T = 25 °C GS j (1) T = 150 °C j Fig. 20. TR2; Output characteristics: drain current as a (2) T = 25 °C j function of drain-source voltage; typical values Fig. 19. TR1; Source current as a function of source- drain voltage; typical values PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 12 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET -10-3 017aaa364 4 017aaa365 ID RD(ΩS)on (1) (2) (3) (A) 3 -10-4 (1) (2) (3) 2 -10-5 (4) 1 (5) -10-6 0 0.0 -0.5 -1.0 -1.5 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 VGS (V) ID (A) T = 25 °C; V = -5 V T = 25 °C j DS j (1) minimum values (1) V = -1.5 V GS (2) typical values (2) V = -1.8 V GS (3) maximum values (3) V = -2.0 V GS Fig. 21. TR2; Sub-threshold drain current as a function (4) VGS = -2.5 V of gate-source voltage (5) V = -4.5 V GS Fig. 22. TR2; Drain-source on-state resistance as a function of drain current; typical values 017aaa366 017aaa367 4 -0.5 RDSon (IAD) (Ω) -0.4 3 -0.3 2 -0.2 (1) (2) (1) 1 -0.1 (2) 0 0.0 0 -1 -2 -3 -4 -5 0.0 -0.5 -1.0 -1.5 -2.0 VGS (V) VGS (V) I = -400 mA V > I × R D DS D DSon (1) T = 150 °C (1) T = 25 °C j j (2) T = 25 °C (2) T = 150 °C j j Fig. 23. TR2; Drain-source on-state resistance as a Fig. 24. TR2; Transfer characteristics: drain current as a function of gate-source voltage; typical values function of gate-source voltage; typical values PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 13 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa368 017aaa369 2.0 -1.5 a (1) VGS(th) (V) 1.5 -1.0 (2) 1.0 (3) -0.5 0.5 0.0 0.0 -60 0 60 120 180 -60 0 60 120 180 Tj (°C) Tj (°C) I = -0.25 mA; V = V Fig. 25. TR2; Normalized drain-source on-state D DS GS (1) maximum values resistance as a function of ambient (2) typical values temperature; typical values (3) minimum values Fig. 26. TR2; Gate-source threshold voltage as a function of junction temperature 102 017aaa370 -5 017aaa371 (1) VGS (V) C (2) -4 (pF) (3) -3 10 -2 -1 1 0 -10-1 -1 -10 -102 0.0 0.2 0.4 0.6 0.8 VDS (V) QG (nC) f = 1 MHz; V = 0 V I = -0.4 A; V = -10 V; T = 25 °C GS D DD amb (1) C iss Fig. 28. TR2; Gate-source voltage as a function of gate (2) C oss charge; typical values (3) C rss Fig. 27. TR2; Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 14 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa372 -0.5 VDS IS (A) ID -0.4 VGS(pl) -0.3 VGS(th) VGS -0.2 QGS1 QGS2 (1) (2) QGS QGD -0.1 QG(tot) 017aaa137 0.0 Fig. 29. Gate charge waveform definitions 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 VSD (V) V = 0 V GS (1) T = 150 °C amb (2) T = 25 °C amb Fig. 30. TR2; Source current as a function of source- drain voltage; typical values PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 15 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 11. Test information P dutycycleδ= t1 t2 t2 t1 t 006aaa812 Fig. 31. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 2.2 1.1 1.8 0.8 6 5 4 0.45 0.15 2.2 1.35 2.0 1.15 pin1 index 1 2 3 0.3 0.25 0.65 0.2 0.10 1.3 Dimensionsinmm 06-03-16 Fig. 32. Package outline TSSOP6 (SOT363) PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 16 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 13. Soldering 2.65 solderlands 2.35 1.5 0.6 0.5 0.4(2×) (4×) (4×) solderresist solderpaste 0.5 0.6 occupiedarea (4×) (2×) 0.6 Dimensionsinmm (4×) 1.8 sot363_fr Fig. 33. Reflow soldering footprint for TSSOP6 (SOT363) 1.5 solderlands 4.5 0.3 2.5 solderresist occupiedarea 1.5 Dimensionsinmm preferredtransport 1.3 1.3 directionduringsoldering 2.45 5.3 sot363_fw Fig. 34. Wave soldering footprint for TSSOP6 (SOT363) PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 17 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMGD290UCEA v.3 20140328 Product data sheet - PMGD290UCEA v.2 Modifications: • Table 7: I parameter unit corrected GSS PMGD290UCEA v.2 20130418 Product data sheet - PMGD290UCEA v.1 PMGD290UCEA v.1 20130415 Product data sheet - - PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 18 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 15. 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Nexperia does not give any whether the Nexperia product is suitable and fit for the representations or warranties as to the accuracy or completeness of customer’s applications and products planned, as well as for the planned information included herein and shall have no liability for the consequences application and use of customer’s third party customer(s). Customers should of use of such information. provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is Nexperia does not accept any liability related to any default, intended for quick reference only and should not be relied upon to contain damage, costs or problem which is based on any weakness or default detailed and full information. For detailed and full information see the in the customer’s applications or products, or the application or use by relevant full data sheet, which is available on request via the local Nexperia customer’s third party customer(s). Customer is responsible for doing all sales office. In case of any inconsistency or conflict with the necessary testing for the customer’s applications and products using Nexperia short data sheet, the full data sheet shall prevail. products in order to avoid a default of the applications and the products or of the application or use by customer’s third party Product specification — The information and data provided in a Product customer(s). Nexperia does not accept any liability in this respect. data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and Limiting values — Stress above one or more limiting values (as defined in customer have explicitly agreed otherwise in writing. In no event however, the Absolute Maximum Ratings System of IEC 60134) will cause permanent shall an agreement be valid in which the Nexperia product damage to the device. Limiting values are stress ratings only and (proper) is deemed to offer functions and qualities beyond those described in the operation of the device at these or any other conditions above those Product data sheet. given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 15.3 Disclaimers Terms and conditions of commercial sale — Nexperia Limited warranty and liability — Information in this document is believed products are sold subject to the general terms and conditions of commercial to be accurate and reliable. However, Nexperia does not give sale, as published at http://www.nexperia.com/profile/terms, unless otherwise any representations or warranties, expressed or implied, as to the accuracy agreed in a valid written individual agreement. In case an individual or completeness of such information and shall have no liability for the agreement is concluded only the terms and conditions of the respective consequences of use of such information. Nexperia takes no agreement shall apply. Nexperia hereby expressly objects to responsibility for the content in this document if provided by an information applying the customer’s general terms and conditions with regard to the source outside of Nexperia. purchase of Nexperia products by customer. PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 19 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 20 / 21

Nexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 16. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................5 10 Characteristics .......................................................8 11 Test information ...................................................16 11.1 Quality information .............................................16 12 Package outline ...................................................16 13 Soldering ..............................................................17 14 Revision history ...................................................18 15 Legal information .................................................19 15.1 Data sheet status ...............................................19 15.2 Definitions ...........................................................19 15.3 Disclaimers .........................................................19 15.4 Trademarks ........................................................20 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 28 March 2014 PMGD290UCEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 21 / 21