NTHD4508N MOSFET – Power, Dual, N-Channel, ChipFET 20 V, 4.1 A Features • http://onsemi.com Low R and Fast Switching Speed DS(on) • Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6 • Excellent Thermal Capabilities Where Heat Transfer is Required V(BR)DSS RDS(on) TYP ID MAX • Pb−Free Package is Available 60 m(cid:2) @ 4.5 V 20 V 4.1 A Applications 80 m(cid:2) @ 2.5 V • DC−DC Buck/Boost Converters • Battery and Low Side Switching in Portable Equipment Such as MP3 D1, D2 Players, Cell Phones, DSCs and PDAs • Level Shifting MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G1, G2 Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V S1, S2 Gate−to−Source Voltage VGS ±12 V N−Channel MOSFET Continuous Drain Steady TJ = 25 °C ID 3.0 A Current State TJ = 85 °C 2.2 ChipFET CASE 1206A t (cid:2) 5 s TJ = 25 °C 4.1 STYLE 2 Power Dissipation Steady TJ = 25 °C PD 1.13 W State TJ = 85 °C 0.59 PIN MARKING t (cid:2) 5 s TJ = 25 °C 2.1 CONNECTIONS DIAGRAM Pulsed Drain Current tp = 10 μs IDM 12 A Operating Junction and Storage Temperature TTSJT,G −15550 to °C D1 8 1 S1 1 8 Lead Temperature for Soldering Purposes TL 260 °C D1 7 2 G1 2 C8 7 (1/8” from case for 10 s) D2 6 3 S2 3 M 6 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit D2 5 4 G2 4 5 Junction−to−Ambient – Steady State RθJA 110 °C/W (Note 1) C8= Specific Device Code M = Month Code Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and ORDERING INFORMATION reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq Device Package Shipping† [1 oz] including traces). NTHD4508NT1 ChipFET 3000/Tape & Reel ChipFET NTHD4508NT1G 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: May, 2019 − Rev. 3 NTHD4508N/D

NTHD4508N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V 20 V Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16 V 1.0 (cid:3)A VGS = 0 V, VDS = 16 V, TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = (cid:3)12 V (cid:3)100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 (cid:3)A 0.6 1.2 V Drain−to−Source On−Resistance RDS(on) VGS = 4.5, ID = 3.1 A 60 75 m(cid:2) VGS = 2.5, ID = 2.3 A 80 115 Forward Transconductance gFS VDS = 10 V, ID = 3.1 A 6.0 S CHARGES AND CAPACITANCES Input Capacitance CISS 180 pF Output Capacitance COSS VGS = V0D VS, =f =1 01 .V0 MHz, 80 Reverse Transfer Capacitance CRSS 25 Total Gate Charge QG(TOT) 2.6 4.0 nC Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.5 Gate−to−Source Charge QGS ID = 3.1 A 0.6 Gate−to−Drain Charge QGD 0.7 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(ON) 5.0 10 ns Rise Time tr VGS = 4.5 V, VDS = 16 V, 15 30 Turn−Off Delay Time td(OFF) ID = 3.1 A, RG = 2.5 (cid:2) 10 20 Fall Time tf 3.0 6.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 3.1 A 0.75 1.15 V Reverse Recovery Time tRR 12.5 ns Charge Time ta 9.0 VGS = 0 V, IS = 1.5 A, Discharge Time tb dIS/dt = 100 A/(cid:3)s 3.5 Reverse Recovery Charge QRR 6.0 nC 2. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2

NTHD4508N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 8 8 VGS = 5 V to 3 V TJ = 25°C VDS ≥ 10 V S) VGS = 2.4 V S) P 2.2 V 2 V P M 6 M 6 A A T ( T ( N N E E RR 4 1.8 V RR 4 U U C C N N AI AI DR 2 1.6 V DR 2 TC = −55°C D, D, I 1.4 V I 25°C 100°C 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:2)) (cid:2)) E (0.15 E ( 0.1 NC ID = 3.1 A NC TJ = 25°C STA TJ = 25°C STA ESI ESI VGS = 2.5 V E R0.10 E R C C R R U U 0.07 O O N−TO−S0.05 N−TO−S VGS = 4.5 V AI AI R R D D R DS(on), 00 1 2 3 4 5 6 R DS(on), 0.04 1 3 5 7 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and Voltage Gate Voltage 1.7 100 ID = 3.1 A VGS = 0 V ED) VGS = 4.5 V RCZE 1.5 DRAIN−TO−SOU S(on),SISTANCE (NORMALI 110...319 I, LEAKAGE (nA)DSS 10 TJ = 100°C DE RR 0.7 1 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature vs. Voltage http://onsemi.com 3

NTHD4508N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 400 CISS VDS = 0 V VGS = 0 V TJ = 25°C OLTS)5 QG 10 OLTS) V V TANCE (pF) 320000 CRSS E VOLTAGE (43 7.5E VOLTAGE ( PACI URC2 QGS QGD 5.0URC A O O C S S C, 100 O− 2.5O− COSS −T1 −T E ID = 3.1 A N 0 GAT0 TJ = 25°C 0 DRAI 10 5 VGS0 VDS 5 10 15 20 V GS, 0 0.5 QG, TO1TAL GA1T.E5 CHARG2E (nC) 2.5 3 V DS, GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. Gate−to−Source and Figure 7. Capacitance Variation Drain−to−Source Voltage vs. Total Charge 100 7 VIDD =D 2=. 31 6A V PS) 6 VTJG =S =2 50° CV VGS = 4.5 V AM T ( 5 s) EN ME (n 10 td(off) URR 4 t, TI td(ontr) CE C 3 R tf U 2 O S , S 1 I 1 0 1 10 100 0.3 0.45 0.6 0.75 0.9 1.05 1.2 RG, GATE RESISTANCE (OHMS) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current vs. Gate Resistance http://onsemi.com 4

NTHD4508N SOLDERING FOOTPRINTS* 2.032 2.032 0.08 0.08 0.457 0.018 0.635 0.635 1.032 0.025 0.025 0.043 0.178 0.007 0.457 0.018 0.711 0.254 0.028 0.010 0.66 0.66 (cid:4) (cid:5) mm 0.026 0.026 SCALE 20:1 inches Figure 11. Basic Figure 12. Style 2 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BASIC PAD PATTERNS The basic pad layout with dimensions is shown in footprint. The drain copper area is 0.0019 sq. in. (or 1.22 sq. Figure 11. This is sufficient for low power dissipation mm). This will assist the power dissipation path away from MOSFET applications, but power semiconductor the device (through the copper lead−frame) and into the performance requires a greater copper pad area, particularly board and exterior chassis (if applicable) for the single for the drain leads. device. The addition of a further copper area and/or the The minimum recommended pad pattern shown in Figure addition of vias to other board layers will enhance the 12 improves the thermal area of the drain connections (pins performance still further. 5, 6, 7, 8) while remaining within the confines of the basic http://onsemi.com 5

NTHD4508N PACKAGE DIMENSIONS ChipFET CASE 1206A−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. A M 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN K 8 7 6 5 HORIZONTAL AND VERTICAL SHALL NOT EXCEED 5 6 7 8 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE S B BURRS. 4 3 2 1 6. NO MOLD FLASH ALLOWED ON THE TOP AND 1 2 3 4 BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. L D J MILLIMETERS INCHES G DIM MIN MAX MIN MAX STYLE 2: A 2.95 3.10 0.116 0.122 PIN 1.SOURCE 1 B 1.55 1.70 0.061 0.067 2.GATE 1 C 1.00 1.10 0.039 0.043 3.SOURCE 2 D 0.25 0.35 0.010 0.014 4.GATE 2 G 0.65 BSC 0.025 BSC C 56..DDRRAAIINN 22 KJ 00..1208 00..2402 00..000141 00..001078 7.DRAIN 1 L 0.55 BSC 0.022 BSC 0.05 (0.002) 8.DRAIN 1 M 5 ° NOM 5 ° NOM S 1.80 2.00 0.072 0.080 ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative. http://onsemi.com NTHD4508N/D 6

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