STS4DNF60L N-channel 60 V, 0.045 Ω, 4 A, SO-8 STripFET™ Power MOSFET Features Type V R I DSS DS(on) D STS4DNF60L 60V <0.055Ω 4A ■ Standard outline for easy automated surface mount assembly ■ Low threshold drive SO-8 Application ■ Switching applications Description This Power MOSFET is the latest development of Figure 1. Internal schematic diagram STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STS4DNF60L 4DF60L SO-8 Tape & reel March 2010 Doc ID 6121 Rev 9 1/12 www.st.com 12

Contents STS4DNF60L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 6121 Rev 9

STS4DNF60L Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 60 V DS GS V Gate- source voltage ± 15 V GS I Drain current (continuous) at T = 25 °C 4 A D C I Drain current (continuous) at T = 100 °C 2.5 A D C I (1) Drain current (pulsed) 16 A DM P (2) Total dissipation at T = 25 °C 2 W TOT C E (3) Single pulse avalanche energy 80 mJ AS T Operating junction temperature j - 55 to 150 °C T Storage temperature stg 1. Pulse width limited by safe operating area 2. P =1.6 W for single operation TOT 3. Starting T = 25 °C, I = 4 A, V = 30 V J D DD Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb Thermal resistance junction-pcb D.O.(1) 62.5 °C/W 1. When mounted on inch² FR-4 board, 2 Oz Cu, t < 10sec, dual operation Doc ID 6121 Rev 9 3/12

Electrical characteristics STS4DNF60L 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250 µA, V = 0 60 V (BR)DSS breakdown voltage D GS Zero gate voltage V = Max rating 1 µA I DS DSS drain current (V = 0) V = Max rating, T =125 °C 10 µA GS DS C Gate-body leakage I V = ± 15 V ± 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 1 1.7 2.5 V GS(th) DS GS D R Static drain-source on VGS = 10 V, ID = 2 A 0.045 0.055 Ω DS(on) resistance V = 4.5 V, I = 2 A 0.050 0.065 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g V =25 V, I =2 A - 25 - S fs transconductance DS D Input capacitance C 1030 pF iss Output capacitance C V = 25 V, f = 1 MHz, V = 0 - 140 - pF oss DS GS Reverse transfer C 40 pF rss capacitance Q Total gate charge V = 48 V, I = 4 A, 15 nC g DD D Q Gate-source charge V = 4.5 V - 4 - nC gs GS Q Gate-drain charge (see Figure13) 4 nC gd 4/12 Doc ID 6121 Rev 9

STS4DNF60L Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 15 ns d(on) V = 30 V, I = 2.2 A, - - t Rise time DD D 28 ns r R = 4.7 Ω, V = 10 V G GS t Turn-off delay time 45 ns d(off) (see Figure12) - - t Fall time 10 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 4 A SD - I (1) Source-drain current (pulsed) 16 A SDM V (2) Forward on voltage I = 4 A, V = 0 - 1.2 V SD SD GS t Reverse recovery time I = 4 A, di/dt = 100 A/µs 85 ns rr SD Q Reverse recovery charge V = 20 V - 85 nC rr DD I Reverse recovery current (see Figure17) 2 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 6121 Rev 9 5/12

Electrical characteristics STS4DNF60L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Source-drain diode forward Figure 7. Static drain-source on resistance characteristics 6/12 Doc ID 6121 Rev 9

STS4DNF60L Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature Doc ID 6121 Rev 9 7/12

Test circuits STS4DNF60L 3 Test circuits Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/12 Doc ID 6121 Rev 9

STS4DNF60L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 6121 Rev 9 9/12

Package mechanical data STS4DNF60L SO-8 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) 10/12 Doc ID 6121 Rev 9

STS4DNF60L Revision history 5 Revision history T able 8. Document revision history Date Revision Changes 30-May-2005 5 Initial electronic version 29-Mar-2006 6 Modified Figure2 and Figure3 16-May-2006 7 Modified internal schematic diagram 29-Aug-2007 8 Marking has been updated 30-Mar-2010 9 Inserted E value in Table2: Absolute maximum ratings AS Doc ID 6121 Rev 9 11/12

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