MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors R1 = 10 k(cid:2), R2 = 47 k(cid:2) www.onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R1 R2 network consisting of two resistors; a series base resistor and a Q1 base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT Q2 can reduce both system cost and board space. R2 R1 Features • Simplifies Circuit Design (4) (5) (6) • Reduces Board Space • Reduces Component Count MARKING DIAGRAMS • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 6 AEC-Q101 Qualified and PPAP Capable* • SOT−363 14 M(cid:2) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (cid:2) CASE 419B Compliant 1 MAXIMUM RATINGS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Rating Symbol Max Unit SOT−563 14 M (cid:2) Collector-Base Voltage VCBO 50 Vdc CASE 463A 1 Collector-Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc SOT−963 Q M Input Reverse Voltage VIN(rev) 6 Vdc CASE 527AD 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 14/Q = Specific Device Code M = Date Code* ORDERING INFORMATION (cid:2) = Pb-Free Package Device Package Shipping† (Note: Microdot may be in either location) MUN5314DW1T1G, SOT−363 3,000 / Tape & Reel *Date Code orientation may vary depending up- SMUN5314DW1T1G* on manufacturing location. NSVMUN5314DW1T3G* SOT−363 10,000 / Tape & Reel NSBC114YPDXV6T1G, SOT−563 4,000 / Tape & Reel NSVBC114YPDXV6T1G* NSBC114YPDXV6T5G SOT−563 8,000 / Tape & Reel NSBC114YPDP6T5G SOT−963 8,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2017 − Rev. 6 DTC114YP/D

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5314DW1 (SOT−363) ONE JUNCTION HEATED Total Device Dissipation PD TA = 25°C (Note1) 187 mW (Note2) 256 Derate above 25°C (Note1) 1.5 mW/°C (Note2) 2.0 Thermal Resistance, (Note1) R(cid:2)JA 670 °C/W Junction to Ambient (Note2) 490 MUN5314DW1 (SOT−363) BOTH JUNCTION HEATED (Note3) Total Device Dissipation PD TA = 25°C (Note1) 250 mW (Note2) 385 Derate above 25°C (Note1) 2.0 mW/°C (Note2) 3.0 Thermal Resistance, R(cid:2)JA °C/W Junction to Ambient (Note1) 493 (Note2) 325 Thermal Resistance, R(cid:2)JL °C/W Junction to Lead (Note1) 188 (Note2) 208 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C NSBC114YPDXV6 (SOT−563) ONE JUNCTION HEATED Total Device Dissipation PD TA = 25°C (Note1) 357 mW Derate above 25°C (Note1) 2.9 mW/°C Thermal Resistance, R(cid:2)JA °C/W Junction to Ambient (Note1) 350 NSBC114YPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note3) Total Device Dissipation PD TA = 25°C (Note1) 500 mW Derate above 25°C (Note1) 4.0 mW/°C Thermal Resistance, R(cid:2)JA °C/W Junction to Ambient (Note1) 250 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C NSBC114YPDP6 (SOT−963) ONE JUNCTION HEATED Total Device Dissipation PD TA = 25°C (Note4) 231 MW (Note5) 269 Derate above 25°C (Note4) 1.9 mW/°C (Note5) 2.2 Thermal Resistance, R(cid:2)JA °C/W Junction to Ambient (Note4) 540 (Note5) 464 NSBC114YPDP6 (SOT−963) BOTH JUNCTION HEATED (Note3) Total Device Dissipation PD TA = 25°C (Note4) 339 MW (Note5) 408 Derate above 25°C (Note4) 2.7 mW/°C (Note5) 3.3 Thermal Resistance, R(cid:2)JA °C/W Junction to Ambient (Note4) 369 (Note5) 306 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0×1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 4. FR−4 @ 100mm2, 1 oz. copper traces, still air. 5. FR−4 @ 500mm2, 1 oz. copper traces, still air. www.onsemi.com 2

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 ELECTRICAL CHARACTERISTICS (TA=25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current ICBO nAdc (VCB=50V, IE=0) − − 100 Collector-Emitter Cutoff Current ICEO nAdc (VCE=50V, IB=0) − − 500 Emitter-Base Cutoff Current IEBO mAdc (VEB=6.0V, IC=0) − − 0.2 Collector-Base Breakdown Voltage V(BR)CBO Vdc (IC=10(cid:3)A, IE=0) 50 − − Collector-Emitter Breakdown Voltage (Note6) V(BR)CEO Vdc (IC=2.0mA, IB=0) 50 − − ON CHARACTERISTICS DC Current Gain (Note6) hFE (IC=5.0mA, VCE=10V) 80 140 − Collector-Emitter Saturation Voltage (Note6) VCE(sat) V (IC=10mA, IB=0.3mA) − − 0.25 Input Voltage (Off) Vi(off) Vdc (VCE=5.0V, IC=100(cid:3)A) (NPN) − 0.7 0.3 (VCE=5.0V, IC=100(cid:3)A) (PNP) − 0.7 0.3 Input Voltage (On) Vi(on) Vdc (VCE=0.2V, IC=1.0mA) (NPN) 1.4 0.8 − (VCE=0.2V, IC=1.0mA) (PNP) 1.4 0.9 − Output Voltage (On) VOL Vdc (VCC=5.0V, VB=2.5V, RL=1.0k(cid:4)) − − 0.2 Output Voltage (Off) VOH Vdc (VCC=5.0V, VB=0.5V, RL=1.0k(cid:4)) 4.9 − − Input Resistor R1 7.0 10 13 k(cid:4) Resistor Ratio R1/R2 0.17 0.21 0.25 6. Pulsed Condition: Pulse Width=300ms, Duty Cycle ≤2%. 400 W) 350 m N ( 300 O ATI 250 P (1) SOT−363; 1.0×1.0 Inch Pad SI S 200 (2) SOT−563; Minimum Pad DI (1) (2) (3) (3) SOT−963; 100mm2, 1 oz. Copper Trace R 150 E W O 100 P , D 50 P 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 3

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 TYPICAL CHARACTERISTICS − NPN TRANSISTOR MUN5314DW1, NSBC114YPDXV6 V) E ( 1 1000 LTAG IC/IB = 10 VCE = 10 V 25°C 150°C O N V AI R G E 25°C T 100 MITT REN −55°C E 0.1 150°C R − U R C TO C 10 C D OLLE −55°C h, FE C , sat) 0.01 1 E( 0 10 20 30 40 50 0.1 1 10 100 C V IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. V vs. I Figure 3. DC Current Gain CE(sat) C 3.6 100 CE (pF) 32..28 fITE A= = =1 002 5AkH°Cz T (mA) 10 −55°C N N A 2.4 E T R ACI 2 UR 1 25°C P C A 1.6 R T C TO 0.1 150°C U 1.2 C P E T L U 0.8 L O O0.01 C, ob 0.4 I, CC VO = 5 V 0 0.001 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage 100 V) AGE ( 10 25°C −55°C T L O V T U P 1 N , In 150°C Vi VO = 0.2 V 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current www.onsemi.com 4

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 TYPICAL CHARACTERISTICS − PNP TRANSISTOR MUN5314DW1, NSBC114YPDXV6 V) E ( 1 1000 LTAG IC/IB = 10 VCE = 10 V 25°C 150°C O N ER V 25°C T GAI 100 −55°C T N EMIT 0.1 150°C RRE − U R C CTO DC 10 LLE −55°C h, FE O C , at) 0.01 1 s E( 0 10 20 30 40 50 0.1 1 10 100 C V IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. V vs. I Figure 8. DC Current Gain CE(sat) C 10 100 CE (pF) 98 fITE A= = =1 002 5AkH°Cz T (mA) 10 −55°C N 7 N A E T R CI 6 R 1 A U AP 5 R C 25°C T C 4 TO 0.1 PU 3 EC 150°C T L OU 2 OL0.01 C, ob 1 I, CC VO = 5 V 0 0.001 0 10 20 30 40 50 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 V) AGE ( 10 25°C LT −55°C O V T U P 1 N , In 150°C Vi VO = 0.2 V 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current www.onsemi.com 5

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 TYPICAL CHARACTERISTICS − NPN TRANSISTOR NSBC114YPDP6 V) E ( 1 1000 LTAG IC/IB = 10 VCE = 10 V 25°C 150°C O N V AI R 25°C G TTE NT 100 −55°C MI RE E 0.1 150°C R − U R C TO C 10 C D OLLE −55°C h, FE C , sat) 0.01 1 CE( 0 10 20 30 40 50 0.1 1 10 100 V IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. V vs. I Figure 13. DC Current Gain CE(sat) C 2.4 100 CE (pF) 2 fITE A= = =1 002 5AkH°Cz T (mA) 10 −55°C N N A 1.6 E T R CI R 1 A U P 1.2 C A R T C TO 0.1 25°C U 0.8 C P E T L U L C, Oob 0.4 I, COC0.01 150°C VO = 5 V 0 0.001 0 10 20 30 40 50 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 14. Output Capacitance Figure 15. Output Current vs. Input Voltage 100 V) AGE ( 10 25°C −55°C T L O V T U P 1 N , In 150°C Vi VO = 0.2 V 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage vs. Output Current www.onsemi.com 6

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 TYPICAL CHARACTERISTICS − PNP TRANSISTOR NSBC114YPDP6 V) E ( 1 1000 AG IC/IB = 10 VCE = 10 V LT 25°C 150°C O 25°C N R V GAI TTE NT 100 −55°C MI 150°C RE E 0.1 R TOR− C CU 10 C −55°C D LE , E OL hF C , sat) 0.01 1 CE( 0 10 20 30 40 50 0.1 1 10 100 V IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. V vs. I Figure 18. DC Current Gain CE(sat) C 7 100 CE (pF) 6 fITE A= = =1 002 A5kH°Cz T (mA) 10 −55°C N 5 N A E T R ACI 4 UR 1 P C A R T C 3 TO 0.1 25°C U C P E T 2 L U L O O0.01 C, ob 1 I, CC 150°C VO = 5 V 0 0.001 0 10 20 30 40 50 0 1 2 3 4 5 6 7 12 11 10 11 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 19. Output Capacitance Figure 20. Output Current vs. Input Voltage 100 V) AGE ( 10 25°C −55°C T L O V T U P 1 N , In 150°C Vi VO = 0.2 V 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage vs. Output Current www.onsemi.com 7

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H N1O.TDEISM:ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, D PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU- GAGE PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF 6 5 4 THE PLASTIC BODY AND DATUM H. L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H. E E1 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE DETAIL A LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 1 2 3 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN aaa C EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI- 2X TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER bbb H D 2X 3 TIPS RADIUS OF THE FOOT. e MILLIMETERS INCHES B 6X b DIM MIN NOM MAX MIN NOM MAX A −−− −−− 1.10 −−− −−− 0.043 ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004 TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 0.010 C 0.08 0.15 0.22 0.003 0.006 0.009 A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086 A E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 BSC 0.026 BSC L 0.26 0.36 0.46 0.010 0.014 0.018 L2 0.15 BSC 0.006 BSC aaa 0.15 0.006 bbb 0.30 0.012 6X ccc C ccc 0.10 0.004 A1 C SEATING c ddd 0.10 0.004 PLANE SIDE VIEW END VIEW RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. D 2. CONTROLLING DIMENSION: MILLIMETERS A −X− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD L FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 6 5 4 MILLIMETERS INCHES −YE− HE DAIM 0M.5IN0 N0O.5M5 M0.A60X 0.M02IN0 0N.0O2M1 0M.0A23X 1 2 3 b 0.17 0.22 0.27 0.007 0.009 0.011 C 0.08 0.12 0.18 0.003 0.005 0.007 D 1.50 1.60 1.70 0.059 0.062 0.066 b 65 PL C E 1.10 1.20 1.30 0.043 0.047 0.051 e e 0.5 BSC 0.02 BSC 0.08 (0.003) M X Y L 0.10 0.20 0.30 0.004 0.008 0.012 HE 1.50 1.60 1.70 0.059 0.062 0.066 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 1.35 0.0394 0.0531 0.5 0.5 0.0197 0.0197 (cid:2) (cid:3) mm SCALE 20:1 inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 PACKAGE DIMENSIONS SOT−963 CASE 527AD ISSUE E D X NOTES: A 1. DIMENSIONING AND TOLERANCING PER ASME Y Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD 6 5 4 FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF E HE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD 1 2 3 FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS TOP VIEW C DAIM M0.I3N4 N0O.3M7 M0.A40X SIDE VIEW b 0.10 0.15 0.20 C 0.07 0.12 0.17 D 0.95 1.00 1.05 e 6XL E 0.75 0.80 0.85 e 0.35 BSC HE 0.95 1.00 1.05 L 0.19 REF L2 0.05 0.10 0.15 6XL2 6Xb 0.08 X Y BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRINT* 6X 6X 0.20 0.35 PACKAGE OUTLINE 1.20 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com DTC114YP/D 10

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MUN5314DW1T1G NSBC114YPDXV6T1G NSBC114YPDXV6T5G NSBC114YPDP6T5G NSVB114YPDXV6T1G NSVMUN5314DW1T3G