Product Order Technical Tools & Support & Folder Now Documents Software Community CSD18532NQ5B SLPS440C–JUNE2013–REVISEDFEBRUARY2018 CSD18532NQ5B 60-V N-Channel NexFET™ Power MOSFET 1 Features ProductSummary • Ultra-LowQ andQ 1• Low-ThermaglResistgadnce TA=25°C TYPICALVALUE UNIT VDS Drain-to-SourceVoltage 60 V • AvalancheRated Qg GateChargeTotal(10V) 49 nC • Lead-FreeTerminalPlating Qgd GateChargeGate-to-Drain 7.9 nC • RoHSCompliant VGS=6V 3.5 RDS(on) Drain-to-SourceOn-Resistance mΩ • HalogenFree VGS=10V 2.7 • SON5-mm×6-mmPlasticPackage VGS(th) ThresholdVoltage 2.8 V 2 Applications DeviceInformation DEVICE QTY MEDIA PACKAGE SHIP • DC-DCConversion CSD18532NQ5B 2500 13-InchReel SON Tape • SecondarySideSynchronousRectifier 5.00-mm×6.00-mm and CSD18532NQ5BT 250 7-InchReel PlasticPackage Reel • IsolatedConverterPrimarySideSwitch • MotorControl AbsoluteMaximumRatings 3 Description TA=25°C VALUE UNIT VDS Drain-to-SourceVoltage 60 V This 60-V, 2.7-mΩ, 5-mm × 6-mm SON NexFET™ VGS Gate-to-SourceVoltage ±20 V power MOSFET has been designed to minimize ContinuousDrainCurrent(PackageLimited) 100 lossesinpowerconversionapplications. ContinuousDrainCurrent(SiliconLimited), ID TC=25°C 151 A TopView ContinuousDrainCurrent(1) 21 IDM PulsedDrainCurrent(2) 400 A S 1 8 D PowerDissipation(1) 3.1 PD W PowerDissipation,TC=25°C 156 S 2 7 D TJ, OperatingJunctionTemperature, –55to150 °C Tstg StorageTemperature S 3 6 D EAS AIDv=ala8n5cAh,eLE=ne0r.g1ym,SHin,gRlGe=Pu2l5seΩ 360 mJ D (1) Typical R = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in G 4 5 D θJA thickFR4PCB. P0093-01 (2) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. R vsV GateCharge DS(on) GS 14 10 :m) 12 TTCC == 2152°5C°C, ,I DI D= = 2 255 A A V) 9 IVDD =S 2=5 3 A0 V stance ( 10 Voltage ( 78 e Resi 8 ource 56 Stat 6 o-S 4 n- e-t - ODS(on) 24 V - GatGS 23 R 1 0 0 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 45 50 VGS - Gate-to-Source Voltage (V) D007 Qg - Gate Charge (nC) D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD18532NQ5B SLPS440C–JUNE2013–REVISEDFEBRUARY2018 www.ti.com Table of Contents 1 Features.................................................................. 1 6.2 CommunityResources..............................................7 2 Applications........................................................... 1 6.3 Trademarks...............................................................7 3 Description............................................................. 1 6.4 ElectrostaticDischargeCaution................................7 6.5 Glossary....................................................................7 4 RevisionHistory..................................................... 2 7 Mechanical,Packaging,andOrderable 5 Specifications......................................................... 3 Information............................................................. 8 5.1 ElectricalCharacteristics...........................................3 7.1 Q5BPackageDimensions........................................8 5.2 ThermalInformation..................................................3 7.2 RecommendedPCBPattern.....................................9 5.3 TypicalMOSFETCharacteristics..............................4 7.3 RecommendedStencilPattern.................................9 6 DeviceandDocumentationSupport.................... 7 7.4 Q5BTapeandReelInformation.............................10 6.1 ReceivingNotificationofDocumentationUpdates....7 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionB(May2017)toRevisionC Page • ExtendedtheV onFigure5to60V.................................................................................................................................... 4 DS ChangesfromRevisionA(December2015)toRevisionB Page • AddedReceivingNotificationofDocumentationUpdatessection. ....................................................................................... 7 • Changedthedimensionbetweenpads3and4from0.028inches:to0.050inchesintheRecommendedPCB Patternsectiondiagram......................................................................................................................................................... 9 ChangesfromOriginal(June2014)toRevisionA Page • Addedpartnumbertotitle. .................................................................................................................................................... 1 • Added7"reeltoOrderingInformation. .................................................................................................................................. 1 • Updatedpulsedcurrentconditions. ....................................................................................................................................... 1 • AddedlineforPowerDissipation,T =25°CinAbsoluteMaximumRatingstable. ............................................................. 1 C • UpdatedFigure1toshowR curves. ................................................................................................................................. 4 θJC • UpdatedSOAinFigure10..................................................................................................................................................... 6 • AddedDeviceandDocumentationSupportsection. ............................................................................................................. 7 • UpdatedMechanical,Packaging,andOrderableInformationandmechanicaldrawings. .................................................... 8 2 SubmitDocumentationFeedback Copyright©2013–2018,TexasInstrumentsIncorporated ProductFolderLinks:CSD18532NQ5B

CSD18532NQ5B www.ti.com SLPS440C–JUNE2013–REVISEDFEBRUARY2018 5 Specifications 5.1 Electrical Characteristics T =25°Cunlessotherwisestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT STATICCHARACTERISTICS BV Drain-to-sourcevoltage V =0V,I =250μA 60 V DSS GS D I Drain-to-sourceleakagecurrent V =0V,V =48V 1 μA DSS GS DS I Gate-to-sourceleakagecurrent V =0V,V =20V 100 nA GSS DS GS V Gate-to-sourcethresholdvoltage V =V ,I =250μA 2.4 2.8 3.4 V GS(th) DS GS D V =6V,I =25A 3.5 4.4 GS D R Drain-to-sourceon-resistance mΩ DS(on) V =10V,I =25A 2.7 3.4 GS D g Transconductance V =30V,I =25A 140 S fs DS D DYNAMICCHARACTERISTICS C Inputcapacitance 4100 5340 pF iss C Outputcapacitance V =0V,V =30V,ƒ=1MHz 495 644 pF oss GS DS C Reversetransfercapacitance 16 21 pF rss R Seriesgateresistance 1.2 2.4 Ω G Q Gatechargetotal(10V) V =30V,I =25A 49 64 nC g DS D Q Gatechargegate-to-drain 7.9 nC gd Q Gatechargegate-to-source 16 nC gs Q GatechargeatV 11 nC g(th) th Q Outputcharge V =30V,V =0V 69 nC oss DS GS t Turnondelaytime 8.2 ns d(on) tr Risetime VDS=30V,VGS=10V, 8.7 ns td(off) Turnoffdelaytime IDS=25A,RG=0Ω 20 ns t Falltime 2.7 ns f DIODECHARACTERISTICS V Diodeforwardvoltage I =25A,V =0V 0.8 1 V SD SD GS Qrr Reverserecoverycharge VDS=30V,IF=25A, 139 nC t Reverserecoverytime di/dt=300A/μs 64 ns rr 5.2 Thermal Information T =25°Cunlessotherwisestated A THERMALMETRIC MIN TYP MAX UNIT R Junction-to-casethermalresistance(1) 0.8 °C/W θJC R Junction-to-ambientthermalresistance(1)(2) 50 °C/W θJA (1) R isdeterminedwiththedevicemountedona1-in2(6.45-cm2),2-oz(0.071-mm)thickCupadona1.5-in×1.5-in(3.81-cm×3.81- θJC cm),0.06-in(1.52-mm)thickFR4PCB.R isspecifiedbydesign,whereasR isdeterminedbytheuser’sboarddesign. θJC θJA (2) DevicemountedonFR4materialwith1-in2(6.45-cm2),2-oz(0.071-mm)thickCu. Copyright©2013–2018,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:CSD18532NQ5B

CSD18532NQ5B SLPS440C–JUNE2013–REVISEDFEBRUARY2018 www.ti.com GATE Source GATE Source N N - - C C h h a a n n MaxR =125°C/W 5x MaxR =50°C/W 5x θJA 6 θJA 6 whenmountedona Q whenmountedon1in2 Q FN (6.45cm2)of2-oz FN minimumpadareaof TTA (0.071-mm)thickCu. TTA 2-oz.(0.071-mm)thick M M Cu. A I X N R R e e v v 3 DRAIN 3 DRAIN M0137-01 M0137-02 5.3 Typical MOSFET Characteristics T =25°Cunlessotherwisestated A Figure1.TransientThermalImpedance 4 SubmitDocumentationFeedback Copyright©2013–2018,TexasInstrumentsIncorporated ProductFolderLinks:CSD18532NQ5B

CSD18532NQ5B www.ti.com SLPS440C–JUNE2013–REVISEDFEBRUARY2018 Typical MOSFET Characteristics (continued) T =25°Cunlessotherwisestated A 200 200 nt (A) 116800 nt (A) 116800 TTTCCC === 12-52555° °C ° CC e e urr 140 urr 140 C C e 120 e 120 c c our 100 our 100 S S o- 80 o- 80 n-t n-t ai 60 ai 60 Dr Dr - DS 40 VGS = 6 V - DS 40 I 20 VGS = 8 V I 20 VGS = 10 V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) D002 VGS - Gate-to-Source Voltage (V) D003 V =5V DS Figure2.SaturationCharacteristics Figure3.TransferCharacteristics 10 100000 e (V) 89 CCCiorssssss === CCCggddds ++ CCggsd g 10000 olta 7 pF) e-to-Source V 456 Capacitance ( 1000 - GatS 23 C - 100 G V 1 0 10 0 5 10 15 20 25 30 35 40 45 50 0 6 12 18 24 30 36 42 48 54 60 Qg - Gate Charge (nC) D004 VDS - Drain-to-Source Voltage (V) D005 I =25A V =30V D DS Figure4.GateCharge Figure5.Capacitance 3.4 14 TC = 25°C, ID = 25 A 3.2 :) 12 TC = 125°C, ID = 25 A hold Voltage (V) 22..683 e Resistance (m 108 Thres 2.4 n-Stat 6 V - GS(th) 2.22 R - ODS(on) 24 1.8 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 20 TC - Case Temperature (°C) D006 VGS - Gate-to-Source Voltage (V) D007 I =250µA D Figure6.ThresholdVoltagevsTemperature Figure7.On-StateResistancevsGate-to-SourceVoltage Copyright©2013–2018,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:CSD18532NQ5B

CSD18532NQ5B SLPS440C–JUNE2013–REVISEDFEBRUARY2018 www.ti.com Typical MOSFET Characteristics (continued) T =25°Cunlessotherwisestated A 2.2 100 VGS = 6 V TC = 25°C stance 1.82 VGS = 10 V ent (A) 10 TC = 125°C esi 1.6 urr 1 R C e n at 1.4 ai St Dr 0.1 n- 1.2 o- alized O 1 Source-t 0.01 orm 0.8 - D 0.001 N 0.6 IS 0.4 0.0001 -75 -50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature (°C) D008 VSD - Source-to-Drain Voltage (V) D009 I =25A D Figure8.NormalizedOn-StateResistancevsTemperature Figure9.TypicalDiodeForwardVoltage 1000 330000 TC = 25q C A) A) TC = 125q C nt ( 100 nt ( e e urr urr 100 C C e e c h o-Sour 10 valanc ain-t ak A Dr 1 Pe I - DS D10C ms 11000 µ µss I - AV 1 ms 0.1 10 0.1 1 10 100 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) D010 TAV - Time in Avalanche (ms) D011 Singlepulse,maxR =0.8°C/W θJC Figure10.MaximumSafeOperatingArea Figure11.SinglePulseUnclampedInductiveSwitching 120 A) 100 nt ( e urr 80 C e c our 60 S o- n-t 40 ai Dr - S 20 D I 0 -50 -25 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) D012 Figure12.MaximumDrainCurrentvsTemperature 6 SubmitDocumentationFeedback Copyright©2013–2018,TexasInstrumentsIncorporated ProductFolderLinks:CSD18532NQ5B

CSD18532NQ5B www.ti.com SLPS440C–JUNE2013–REVISEDFEBRUARY2018 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed.Forchangedetails,reviewtherevisionhistoryincludedinanyreviseddocument. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 6.3 Trademarks NexFET,E2EaretrademarksofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 6.4 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 6.5 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. Copyright©2013–2018,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:CSD18532NQ5B

CSD18532NQ5B SLPS440C–JUNE2013–REVISEDFEBRUARY2018 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. 7.1 Q5B Package Dimensions K c1 H L E1 8 1 8x) 1 8 (cid:127) b ( 7 2 2 7 D2 D3 1 E D 6 3 3 6 e 5 4 5 4 d1 d2 Top View Side View Bottom View (cid:127) Front View MILLIMETERS DIM MIN NOM MAX A 0.80 1.00 1.05 b 0.36 0.41 0.46 c 0.15 0.20 0.25 c1 0.15 0.20 0.25 c2 0.20 0.25 0.30 D1 4.90 5.00 5.10 D2 4.12 4.22 4.32 d 0.20 0.25 0.30 E 4.90 5.00 5.10 E1 5.90 6.00 6.10 E2 3.48 3.58 3.68 e 1.27TYP L 0.46 0.56 0.66 θ 0° — — K 1.40TYP 8 SubmitDocumentationFeedback Copyright©2013–2018,TexasInstrumentsIncorporated ProductFolderLinks:CSD18532NQ5B

CSD18532NQ5B www.ti.com SLPS440C–JUNE2013–REVISEDFEBRUARY2018 7.2 Recommended PCB Pattern For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005). 7.3 Recommended Stencil Pattern (0.020) (0.014) 0.508 (0.022) (0.011) 0.350 (0.029) x4 0.562 x 4 0.286 0.746 x 8 2.186(0.086) 4.318(0.170) 0.300 (0.012) 1.270 (0.050) 1.270(0.050) (0.051) (0.030) 1.294 (0.060) 0.766 (0.042) x 8 1.525 1.072 (0.259) 6.586 Copyright©2013–2018,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:CSD18532NQ5B

CSD18532NQ5B SLPS440C–JUNE2013–REVISEDFEBRUARY2018 www.ti.com 7.4 Q5B Tape and Reel Information 0 1 K0 0. ± 0.30 ±0.05 4.00 ±0.10 (See Note 1) 5 7 2.00 ±0.05 Ø 1.50 +0.10 1. –0.00 0 3 0. ± 0 B0 2.0 1 5 0 0. ± 0 5 5. A0 8.00 ±0.10 R 0.30 MAX Ø 1.50 MIN R 0.30TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10-sprockethole-pitchcumulativetolerance±0.2. 2. Cambernottoexceed1mmin100mm,noncumulativeover250mm. 3. Material:blackstatic-dissipativepolystyrene. 4. Alldimensionsareinmm(unlessotherwisespecified). 5. A0andB0measuredonaplane0.3mmabovethebottomofthepocket. 10 SubmitDocumentationFeedback Copyright©2013–2018,TexasInstrumentsIncorporated ProductFolderLinks:CSD18532NQ5B

PACKAGE OPTION ADDENDUM www.ti.com 9-Jun-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD18532NQ5B ACTIVE VSON-CLIP DNK 8 2500 Green (RoHS SN Level-1-260C-UNLIM -55 to 150 18532N & no Sb/Br) CSD18532NQ5BT ACTIVE VSON-CLIP DNK 8 250 Green (RoHS SN Level-1-260C-UNLIM -55 to 150 18532N & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 9-Jun-2020 Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 20-May-2019 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) CSD18532NQ5B VSON- DNK 8 2500 330.0 12.4 6.3 5.3 1.2 8.0 12.0 Q1 CLIP CSD18532NQ5BT VSON- DNK 8 250 330.0 12.4 6.3 5.3 1.2 8.0 12.0 Q1 CLIP PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 20-May-2019 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) CSD18532NQ5B VSON-CLIP DNK 8 2500 335.0 335.0 32.0 CSD18532NQ5BT VSON-CLIP DNK 8 250 335.0 335.0 32.0 PackMaterials-Page2

IMPORTANTNOTICEANDDISCLAIMER TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products. Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2020, Texas Instruments Incorporated