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  • 型号: FDMC612PZ
  • 制造商: Fairchild Semiconductor
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FDMC612PZ产品简介:

ICGOO电子元器件商城为您提供FDMC612PZ由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FDMC612PZ价格参考。Fairchild SemiconductorFDMC612PZ封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 P 沟道 20V 14A(Ta) 2.3W(Ta),26W(Tc) 8-MLP(3.3x3.3)。您可以下载FDMC612PZ参考资料、Datasheet数据手册功能说明书,资料中有FDMC612PZ 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET P-CH 20V 8-MLPMOSFET -20V P-Channel PowerTrench MOSFET

产品分类

FET - 单分离式半导体

FET功能

逻辑电平门

FET类型

MOSFET P 通道,金属氧化物

Id-连续漏极电流

- 40 A

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Fairchild Semiconductor FDMC612PZPowerTrench®

数据手册

点击此处下载产品Datasheet

产品型号

FDMC612PZ

Pd-PowerDissipation

26 W

Pd-功率耗散

26 W

Qg-GateCharge

53 nC

Qg-栅极电荷

53 nC

RdsOn-漏源导通电阻

13 mOhms

Vds-漏源极击穿电压

- 20 V

Vgsth-Gate-SourceThresholdVoltage

- 0.9 V

Vgsth-栅源极阈值电压

- 0.9 V

上升时间

52 ns

下降时间

81 ns

不同Id时的Vgs(th)(最大值)

1.5V @ 250µA

不同Vds时的输入电容(Ciss)

7995pF @ 10V

不同Vgs时的栅极电荷(Qg)

74nC @ 4.5V

不同 Id、Vgs时的 RdsOn(最大值)

8.4 毫欧 @ 14A, 4.5V

产品种类

MOSFET

供应商器件封装

MLP(3.3x3.3)

其它名称

FDMC612PZCT

典型关闭延迟时间

96 ns

功率-最大值

2.3W

包装

剪切带 (CT)

单位重量

180 mg

商标

Fairchild Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻

13 mOhms

封装

Reel

封装/外壳

8-MLP,Power33

封装/箱体

MLP-8 3.3x3.3

工厂包装数量

3000

晶体管极性

P-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1

汲极/源极击穿电压

- 20 V

漏极连续电流

- 40 A

漏源极电压(Vdss)

20V

电流-连续漏极(Id)(25°C时)

14A (Ta)

系列

FDMC612PZ

配置

Single

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M C 6 October 2013 1 2 FDMC612PZ P Z ® P-Channel PowerTrench MOSFET P - C -20 V, -14 A, 8.4 mΩ h a Features General Description n n e (cid:132) Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild l Semiconductor’s advanced PowerTrench® process that has P (cid:132) Max r = 13 mΩ at V = -2.5 V, I = -11 A DS(on) GS D been optimized for r , switching performance and o DS(ON) w (cid:132) High performance trench technology for extremely low rDS(on) ruggedness. e r (cid:132) High power and current handling capability in a widely used T surface mount package r Applications e n (cid:132) Termination is Lead-free and RoHS Compliant c (cid:132) Battery Management h (cid:132) HBM ESD capability level > 3.6 KV typical (Note 4) ® (cid:132) Load Switch M O S F E T D D D D 8 7 6 5 S D S D Pin 1 S D 1 2 3 4 G S S S Pin 1 G D Top Bottom MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage ±12 V GS Drain Current -Continuous T = 25 °C -40 C I -Continuous T = 25 °C (Note 1a) -14 A D A -Pulsed -50 E Single Pulse Avalanche Energy (Note 3) 38 mJ AS Power Dissipation T = 25 °C 26 P C W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.9 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC612PZ FDMC612PZ MLP 3.3X3.3 13 ’’ 12 mm 3000 units ©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC612PZ Rev.C3

F D Electrical Characteristics T = 25 °C unless otherwise noted M J C Symbol Parameter Test Conditions Min Typ Max Units 6 1 Off Characteristics 2 P BV Drain to Source Breakdown Voltage I = -250 μA, V = 0 V -20 V Z DSS D GS ΔBV Breakdown Voltage Temperature P DSS I = -250 μA, referenced to 25 °C -19 mV/°C - ΔT Coefficient D C J h IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 μA a I Gate to Source Leakage Current V = ±12 V, V = 0 V ±10 μA n GSS GS DS n e On Characteristics l P V Gate to Source Threshold Voltage V = V , I = -250 μA -0.6 -0.9 -1.5 V o GS(th) GS DS D w ΔV Gate to Source Threshold Voltage GS(th) I = -250 μA, referenced to 25 °C 9 mV/°C e ΔTJ Temperature Coefficient D rT VGS = -4.5 V, ID = -14 A 5.9 8.4 re r Static Drain to Source On Resistance V = -2.5 V, I = -11 A 8.2 13 mΩ n DS(on) GS D c VGS = -4.5 V, ID = -14 A, TJ = 125 °C 8.3 13 h g Forward Transconductance V = -5 V, I = -14 A 85 S ® FS DS D M Dynamic Characteristics O S C Input Capacitance 5710 7995 pF iss F V = -10 V, V = 0 V, C Output Capacitance DS GS 1215 1700 pF E oss f = 1 MHz T C Reverse Transfer Capacitance 1170 1640 pF rss Switching Characteristics t Turn-On Delay Time 26 42 ns d(on) tr Rise Time VDD = -10 V, ID = -14 A, 52 83 ns td(off) Turn-Off Delay Time VGS = -4.5 V, RGEN = 6 Ω 96 154 ns t Fall Time 81 130 ns f Q Total Gate Charge 53 74 nC g V = -10 V, I = -14 A, Q Gate to Source Charge DD D 9.4 nC gs V = -4.5 V GS Q Gate to Drain “Miller” Charge 18 nC gd Drain-Source Diode Characteristics V = 0 V, I = -14 A (Note 2) -0.8 -1.3 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = -2 A (Note 2) -0.7 -1.2 GS S t Reverse Recovery Time 39 62 ns rr I = -14 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 17 31 nC rr Notes: 1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 53 °C/W when mounted on a b. 125 °C/W when mounted on a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. GDDSS FSFS GDDSS FSFS 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3: EAS of 38 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = -16 A, VDD = -18 V, VGS = -10 V. 4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMC612PZ Rev.C3

F D Typical Characteristics M T = 25 °C unless otherwise noted J C 6 50 2.0 1 2 V = -4.5 V CE PULSE DURATION = 80 μs P URRENT (A)3400 VGS = -2V.G5S V V= G-3S. 0= GV-3S.5 V ALIZEDE ON-RESISTAN1.5 VGS = -2.5 VVGS = -3.0 DVUTY CYCLE = 0.5% MAX Z P-Chan RAIN C20 NORM SOURC1.0 nel -I, DD10 PULSE DURATION = 80 μs AIN TO VGS = -3.5 V VGS = -4.5 V Pow DUTY CYCLE = 0.5% MAX R e 00.0 0.2 0.4 0.6 D0.50 10 20 30 40 50 rT -V , DRAIN TO SOURCE VOLTAGE (V) r DS -ID, DRAIN CURR ENT (A) en c Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance h ® vs Drain Current and Gate Voltage M O 1.5 25 S E PULSE DURATION = 80 μs F NC1.4 ID = -14 A )Ω DUTY CYCLE = 0.5% MAX E STA1.3 VGS = -4.5 V (mE 20 ID = -14 A T NORMALIZED TO SOURCE ON-RESI0111....9012 rDRAIN TO ,DS(on)URCE ON-RESISTANC11505 TJ = 125 oC AIN 0.8 SO TJ = 25 oC R D0.7 0 -75 -50 -25 0 25 50 75 100 125 150 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TJ, JUNCTION TEM PERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 50 50 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs T (A) 10 VGS = 0 V N 40 E DRAIN CURRENT (A) 2300 VDS = -5 V TJ = 150 oC TJ = 25 oC VERSE DRAIN CURR 0.11 TJ = 150 oC TJ = 25 oC -I, D 10 TJ = -55 oC -I, RES0.01 TJ = -55 oC 0 0.001 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SO URCE VOLTAGE (V) -VSD, BODY DIODE FO RWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMC612PZ Rev.C3

F D Typical Characteristics M T = 25 °C unless otherwise noted J C 6 1 4.5 10000 2 E (V) ID = -14 A VDD = -8 V Ciss PZ AG P E VOLT3.0 VDD = -10 V E (pF) -Ch URC VDD = -12 V ANC Coss an O T n S CI e TE TO 1.5 CAPA1000 Crss l Po A G f = 1 MHz w -V, GS0.0 500 VGS = 0 V erT 0 20 40 60 0.1 1 10 20 r Qg, GATE CH ARGE (nC) -VDS, DRAIN TO SOU RCE VOLTAGE (V) en c Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain h to Source Voltage ® M 50 50 O RθJC = 4.9 oC/W SF NT (A) TJ = 25 oC T (A) 40 ET URRE 10 TJ = 100 oC RREN 30 VGS = -4.5 V C U AVALANCHE TJ = 125 oC , -IDRAIN CD1200 Limited by Package VGS = -2.5 V , S A -I 1 0 0.001 0.01 0.1 1 10 100 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 10-1 100 10-2 VDS = 0 V A) 100 μs RENT ( 1100--43 NT (A) 10 1 ms R E CU 10-5 TJ = 125 oC RR 10 ms GATE LEAKAGE 11110000----9876 TJ = 25 oC -I, DRAIN CUD 0.11 TLSTRHIJIθMN JI=SAIG T M =ALE AERD1X 2E PB5 ARU Yo ALIC SrST/D WEESD(on) CURVE BENT TO 11D10 0Cs0 s ms , g TA = 25 oC MEASURED DATA -I 10-10 0.01 0 6 12 18 0.01 0.1 1 10 100 -VGS, GATE TO S OURCE VOLTAGE (V) -VDS, DRAIN to SOU RCE VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Figure 12. Forward Bias Safe Source Voltage Operating Area ©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMC612PZ Rev.C3

F D Typical Characteristics M T = 25 °C unless otherwise noted J C 1000 6 1 2 OWER (W) 100 TSRAIθNJ =AG 2=L5 E1 o 2PC5U oLCS/EW PZ P-C P T h N a NSIE 10 nn RA e K T l P A 1 E o , PPK) we P( r 0.1 T 10-4 10-3 10-2 10-1 1 10 100 1000 re n t, PULSE WIDTH (s ec) c Figure 13. Single Pulse Maximum Power Dissipation h ® 2 M DUTY CYCLE-DESCENDING ORDER 1 O S AL D = 00..25 FE ALIZED THERM PEDANCE,ZJAθ 0.1 0000....1000521 PDM t1 T RMIM0.01 t2 NO SINGLE PULSE NOTES: R = 125 oC/W DUTY FACTOR: D = t1/t2 θJA PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMC612PZ Rev.C3

None

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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