图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: NE3515S02-A
  • 制造商: CEL
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

NE3515S02-A产品简介:

ICGOO电子元器件商城为您提供NE3515S02-A由CEL设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NE3515S02-A价格参考¥36.64-¥40.23。CELNE3515S02-A封装/规格:晶体管 - FET,MOSFET - 射频, RF Mosfet HFET 2V 10mA 12GHz 12.5dB 14dBm S02。您可以下载NE3515S02-A参考资料、Datasheet数据手册功能说明书,资料中有NE3515S02-A 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

FET RF HFET 12GHZ 2V 10MA S02射频JFET晶体管 X to Ku-BAND SUPER LOW NOISE AMP N-CH

产品分类

RF FET分离式半导体

Id-ContinuousDrainCurrent

88 mA

Id-连续漏极电流

88 mA

品牌

CEL

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,晶体管射频,射频JFET晶体管,CEL NE3515S02-A-

数据手册

点击此处下载产品Datasheet点击此处下载产品Datasheet

P1dB

14 dBm

产品型号

NE3515S02-A

Pd-PowerDissipation

165 mW

Pd-功率耗散

165 mW

Vds-Drain-SourceBreakdownVoltage

4 V

Vds-漏源极击穿电压

4 V

Vgs-Gate-SourceBreakdownVoltage

- 3 V

Vgs-栅源极击穿电压

- 3 V

产品

RF JFET

产品种类

射频JFET晶体管

供应商器件封装

S02

其它名称

NE3515S02A

功率-输出

14dBm

功率耗散

165 mW

包装

散装

商标

CEL

噪声系数

0.3dB

增益

12.5dB

安装风格

SMD/SMT

封装

Cut Tape

封装/外壳

4-SMD,扁平引线

封装/箱体

S0-2

技术

GaAs

晶体管类型

HFET

最大工作温度

+ 125 C

标准包装

1

正向跨导-最小值

70 mS

漏极连续电流

88 mA

漏源电压VDS

4 V

电压-测试

2V

电压-额定

4V

电流-测试

10mA

类型

GaAs pHEMT

闸/源击穿电压

- 3 V

频率

12GHz

额定电流

88mA

推荐商品

型号:BLF8G27LS-100PJ

品牌:Ampleon USA Inc.

产品名称:分立半导体产品

获取报价

型号:PD57018S

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:BLF647P,112

品牌:Ampleon USA Inc.

产品名称:分立半导体产品

获取报价

型号:MAGX-001214-650L00

品牌:M/A-Com Technology Solutions

产品名称:分立半导体产品

获取报价

型号:NE651R479A-A

品牌:CEL

产品名称:分立半导体产品

获取报价

型号:BLF6G27-45,135

品牌:Ampleon USA Inc.

产品名称:分立半导体产品

获取报价

型号:BLF574,112

品牌:Ampleon USA Inc.

产品名称:分立半导体产品

获取报价

型号:MMBF102

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

样品试用

万种样品免费试用

去申请
NE3515S02-A 相关产品

2N5952_J35Z

品牌:ON Semiconductor

价格:

SD57045

品牌:STMicroelectronics

价格:

BLF6G15LS-40RN,112

品牌:Ampleon USA Inc.

价格:

PD85025TR-E

品牌:STMicroelectronics

价格:

AFT18S230SR5

品牌:NXP USA Inc.

价格:

PD54008

品牌:STMicroelectronics

价格:

BLF6G15L-40BRN,112

品牌:Ampleon USA Inc.

价格:

BLM7G22S-60PBY

品牌:Ampleon USA Inc.

价格:

PDF Datasheet 数据手册内容提取

HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER T N-CHANNEL HJ-FET U FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micro-X plastic (S02) package O APPLICATIONS • X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer • DBS LNB, VSAT • Other X to Ku-band communication systems - ORDERING INFORMATION E Part Number Order Number Package Quantity Marking Supplying Form NE3515S02-T1C NE3515S02-T1C-A S02 (Pb-Free) 2 kpcs/reel G •8 mm wide embossed taping •Pin 4 (Gate) faces the perforation side NE3515S02-T1D NE3515S02-T1D-A 10 kpcs/reel S of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3515S02-A A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V H Gate to Source Voltage VGS 3 V Drain Current ID IDSS mA Gate Current IG 100 A Total Power Dissipation Ptot Note 165 mW P Channel Temperature Tch +125 C Storage Temperature Tstg 65 to +125 C Note Mounted on 1.08 cm2  1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10708EJ01V0DS (1st edition) Date Published February 2008 NS

NE3515S02 RECOMMENDED OPERATING CONDITIONS (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V T Drain Current ID 5 10 25 mA Input Power Pin   0 dBm ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) U Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V  0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 32 60 88 mA O Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.2 0.8 1.4 V Transconductance gm VDS = 2 V, ID = 10 mA 45 70  mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz  0.3 0.5 dB Associated Gain Ga 11 12.5  dB - Gain 1 dB Compression PO (1 dB) VDS = 3 V, ID = 25 mA set (Non-RF),  +14  dBm Output Power f = 12 GHz E S A H P 2 Data Sheet PG10708EJ01V0DS

NE3515S02 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) T U O - E S A H P Remark The graphs indicate nominal characteristics. 3 Data Sheet PG10708EJ01V0DS

NE3515S02 T U O - E S A H Remark The graphs indicate nominal characteristics. P 4 Data Sheet PG10708EJ01V0DS

NE3515S02 S-PARAMETERS T U O - E S A H P 5 Data Sheet PG10708EJ01V0DS

NE3515S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) T U O - E S A H RT/duroid 5880/ROGERS t = 0.254 mm r = 2.20 tan delta = 0.0009 @10 GHz P 6 Data Sheet PG10708EJ01V0DS

NE3515S02 PACKAGE DIMENSIONS S02 (UNIT: mm) T U O - E S A H P 7 Data Sheet PG10708EJ01V0DS

NE3515S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition TSymbol Infrared Reflow Peak temperature (package surface temperature) : 260C or below IR260 Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds U Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Partial Heating Peak temperature (terminal temperature) : 350C or below HS350 Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(WOt.) or below Caution Do not use different soldering methods together (except for partial heating). - E S A H P 8 Data Sheet PG10708EJ01V0DS

NE3515S02 This product uses gallium arsenide (GaAs). Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. T 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. U • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. O - E S A H P Data Sheet PG10708EJ01V0DS 9

NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. T 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, U implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; office equipment; communications O equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by California Eastern Laboratories or Renesas Elec-tronics. 6. You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. California Eastern Laboratories shall have no liability for malfunEctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of S microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a California Eastern Laboratories sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws oAr regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. H 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories. 12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. NOTE 3: Products and product information are subject to change without notice. P CEL Headquarters • 4590 Patrick Henry Drive, Santa Clara, CA 95054 • Phone (408) 919-2500 • www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus