StrongIRFET™ IRFB7446PbF Application HEXFET® Power MOSFET  Brushed Motor drive applications  BLDC Motor drive applications   D VDSS 40V R typ. 2.6m Battery powered circuits DS(on)  Half-bridge and full-bridge topologies max 3.3m  Synchronous rectifier applications G I 123A  Resonant mode power supplies D (Silicon Limited)  OR-ing and redundant power switches S I 120A D (Package Limited)  DC/DC and AC/DC converters  DC/AC Inverters Benefits S  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D G  Fully Characterized Capacitance and Avalanche SOA TO-220AB  Enhanced body diode dV/dt and dI/dt Capability IRFB7446PbF  Lead-Free*  RoHS Compliant, Halogen-Free* G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7446PbF TO-220 Tube 50 IRFB7446PbF ) 8 125 m (e ID = 70A c n a 100 st 6 si eORn TJ = 125°C )An(t e 75 ce 4 urr uro Cn S- o ariD 50 ani-t 2 ,D Dr I , n) TJ = 25°C 25 o (S RD 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 VGS, Gate -to -Source Voltage (V) TC , Case Temperature (°C) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF Absolute Maximum Rating Symbol Parameter Max. Units I @ T = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 123 D C I @ T = 100°C Continuous Drain Current, V @ 10V (Silicon Limited) 87 D C GS A   I @ T = 25°C Continuous Drain Current, V @ 10V (Wire Bond Limited) 120 D C GS I Pulsed Drain Current  492 DM P @T = 25°C Maximum Power Dissipation 99 W D C Linear Derating Factor 0.66 W/°C V Gate-to-Source Voltage ± 20 V GS T Operating Junction and J -55 to + 175   T Storage Temperature Range °C   STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)   Avalanche Characteristics  E Single Pulse Avalanche Energy  111 AS mJ EAS (L=1mH) Single Pulse Avalanche Energy  236 I Avalanche Current  A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy  mJ AR Thermal Resistance   Symbol Parameter Typ. Max. Units R Junction-to-Case  ––– 1.52 JC R Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W   CS R Junction-to-Ambient  ––– 62 JA Static @ T = 25°C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 ––– ––– V V = 0V, I = 250µA (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C Reference to 25°C, I = 5mA  (BR)DSS J D ––– 2.6 3.3 V = 10V, I = 70A  R Static Drain-to-Source On-Resistance m GS D DS(on) ––– 3.9 ––– V = 6.0V, I = 35A  GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100µA GS(th) DS GS D ––– ––– 1.0 V =40 V, V = 0V I Drain-to-Source Leakage Current µA DS GS DSS ––– ––– 150 V =40V,V = 0V,T =125°C DS GS J Gate-to-Source Forward Leakage ––– ––– 100 V = 20V I nA GS GSS Gate-to-Source Reverse Leakage ––– ––– -100 V = -20V GS R Gate Resistance ––– 1.6 –––  G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)  Repetitive rating; pulse width limited by max. junction temperature. Limited by T , starting T = 25°C, L = 0.046mH,R = 50, I = 70A, V =10V. Jmax J G AS GS  I  70A, di/dt  1174A/µs, V  V , T  175°C. SD DD (BR)DSS J  Pulse width  400µs; duty cycle  2%.  C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while VDS is rising from 0 to 80% V . oss oss DSS  R is measured at T approximately 90°C.  J  This value determined from sample failure population, starting T = 25°C, L= 1mH, R = 50, I = 22A, V =10V. J G AS GS * Halogen -Free since April 30, 2014 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF Dynamic Electrical Characteristics @ T = 25°C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 269 ––– ––– S V = 10V, I =70A DS D Q Total Gate Charge ––– 62 93 I = 70A g D Q Gate-to-Source Charge ––– 16 ––– V = 20V gs nC   DS Q Gate-to-Drain Charge ––– 20 ––– V = 10V gd GS Q Total Gate Charge Sync. (Qg– Qgd) ––– 42 ––– sync t Turn-On Delay Time ––– 11 ––– V = 20V d(on) DD t Rise Time ––– 34 ––– I = 30A r D ns t Turn-Off Delay Time ––– 33 ––– R = 2.7 d(off) G t Fall Time ––– 23 ––– V = 10V f GS C Input Capacitance ––– 3183 ––– V = 0V iss GS C Output Capacitance ––– 475 ––– V = 25V oss DS C Reverse Transfer Capacitance ––– 331 ––– ƒ = 1.0MHz, See Fig.5 rss pF   Effective Output Capacitance C ––– 596 ––– V = 0V, VDS = 0V to 32V oss eff.(ER) (Energy Related) GS C Output Capacitance (Time Related) ––– 688 ––– V = 0V, VDS = 0V to 32V oss eff.(TR) GS Diode Characteristics   Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol D I ––– ––– 120 S (Body Diode) showing the A Pulsed Source Current integral reverse G I ––– ––– 492 SM (Body Diode) p-n junction diode. S V Diode Forward Voltage ––– 0.9 1.3 V T = 25°C,I = 70A,V = 0V  SD J S GS dv/dt Peak Diode Recovery dv/dt ––– 7.6 ––– V/ns T = 175°C,I = 70A,V = 40V J S DS ––– 22 ––– T = 25°C V = 34V t Reverse Recovery Time ns J DD rr ––– 24 ––– T = 125°C I = 70A, J F ––– 15 ––– T = 25°C di/dt = 100A/µs  J Q Reverse Recovery Charge nC rr ––– 15 ––– T = 125°C   J I Reverse Recovery Current ––– 1.0 ––– A T = 25°C  RRM J 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF 1000 1000 VGS VGS TOP 15V TOP 15V 10V 10V )An(t 100 876...000VVV A)n(t 876...000VVV eurrC BOTTOM 554...505VVV eCurr100 BOTTOM 554...505VVV e e cru 10 ucr o o S S -o o- 4.5V n-t tn- 10 ai 4.5V ai Dr 1 rD , D , D I 60µs PULSE WIDTH I 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.1 1 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics 1000 2.2 e cn ID = 70A )A(t n 100 TJ = 175°C ssaitRe 1.8 VGS = 10V erru n O Ce Soucrno--tDa ri,ID 01.011 TJ =V 26D50S°µC s= P 1U0LVSE WIDTH ce Sourno--tDa ri,R on()DSed)mazliNo( r 11..04 0.6 2 4 6 8 10 -60 -20 20 60 100 140 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 100000 14.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED ID= 70A 12.0 Fp)( ance 10000 CCrossss == CCdgsd + Cgd Ciss Ve)( oagltVce ur 108..00 VVDDSS== 3220VV cit So pa o- 6.0 Ca Coss e-t , C 1000 Crss Ga, tS 4.0 G V 2.0 100 0.0 0.1 1 10 100 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Gate-to-Source Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF 1000 10000 OPERATION IN THIS AREA LIMITED BY R (on) DS )Ant( 100 TJ = 175°C )Aen(t 1000 eurr Curr 100µsec Canri Dse 10 TJ = 25°C ucer Soo- 11000 Package Limited DC 1msec reve an-it 10msec R, DS 1 D, rD 1 Tc = 25°C I I Tj = 175°C VGS = 0V Single Pulse 0.1 0.1 0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage V) 50 0.6 ( age 49 Id = 5.0mA VDS= 0V to 32V lto 0.5 V n 48 w do 47 0.4 k a eBr 46 µJ) ucer 45 ( egyr 0.3 So 44 nE o- 0.2 n-t 43 ai rD 42 ,S 0.1 S 41 D R) B 40 0.0 V( -60 -20 20 60 100 140 180 0 5 10 15 20 25 30 35 40 45 TJ , Temperature ( °C ) VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical C Stored Energy oss ) 20.0 m (e VGS = 5.5V c n VGS = 6.0V a st 15.0 VGS = 7.0V sie VGS = 8.0V R VGS = 10V n O e cru 10.0 o S -o n-t iDar 5.0 n), o (S D R 0.0 0 100 200 300 400 500 I , Drain Current (A) D Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF 10 W /C °) C 1 D = 0.50 J h 0.20 t Z ( e s 0.1 00..1005 n o p 0.02 s eR 0.01 la m 0.01 reh SINGLE PULSE Notes: T ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and 100 Tstart = 25°C (Single Pulse) )A ( nt e rru C 10 e h c n a la v A 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width 120 TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16: BOTTOM 1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com) )J ID = 70A 1.Avalanche failures assumption: m Purely a thermal phenomenon and failure occurs at a ( y temperature far in excess of T . This is validated for every g 80 jmax er part type. n E 2. Safe operation in Avalanche is allowed as long asT is not e h exceeded. jmax nc 3. Equation below based on circuit and waveforms shown in Figures a la 23a, 23b. Av, R 40 45.. PBDV ( a=v eR) =a tAevde braregaek pdoowwenr vdoisltsaigpea t(i1o.n3 pfaecr tsoirn galcec oauvanltasn fcohr ev oplutalsgee. A increase during avalanche). E 6. I = Allowable avalanche current. av 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 14, 15). 0 t = Average time in avalanche. av 25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f Z (D, t ) = Transient thermal resistance, see Figures 14) Starting TJ , Junction Temperature (°C) thJC av PD (ave) = 1/2 ( 1.3·BV·I ) = T/ Z av thJC I = 2T/ [1.3·BV·Z ] av th Fig 16. Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tav   6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF 4.5 6 IF = 46A V)(age 3.5 5 VTJR = = 2 354°VC tVol 4 TJ = 125°C d shole 2.5 A)( M 3 hr R taet ID = 100µA IR G ID = 250µA 2 , )h 1.5 ID = 1.0mA S(t ID = 1.0A G 1 V 0.5 0 -75 -25 25 75 125 175 225 0 200 400 600 800 1000 T , Temperature ( °C ) di /dt (A/µs) J F Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 5 70 IF = 70A IF = 46A VR = 34V 60 VR = 34V 4 TJ = 25°C TJ = 25°C 50 TJ = 125°C TJ = 125°C A) 3 )C 40 ( RM n( R R R 30 I 2 Q 20 1 10 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 60 IF = 70A V = 34V 50 R T = 25°C J T = 125°C 40 J )C n ( R 30 R Q 20 10 0 0 200 400 600 800 1000 di /dt (A/µs) F Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V VDS L DRIVER RG D.U.T + - VDD IAS A 20V tp 0.01 IAS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: THIS IS AN IRF1010 LO T CO DE 1789 INTERNATIO NAL PART NUM BER ASSEM BLED O N W W 19, 2000 RECTIFIER IN THE ASSEM BLY LINE "C" LO GO DATE CO DE YEAR 0 = 2000 Note: "P" in assem bly line position ASSEM BLY indicates "Lead - Free" LO T CO DE W EEK 19 LINE C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

  IRFB7446PbF Qualification Information†   Industrial Qualification Level   (per JEDEC JESD47F) †† Moisture Sensitivity Level TO-220 N/A RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date Comment 9/11/2012  Added Package limit and updated Fig2 & Fig10 on page 1, 2 & page 5. Updated data sheet with new IR corporate template. 4/22/2014 Updated package outline and part marking on page 9. Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1. Updated E = 236mJ on page 2 AS(L =1mH) 11/7/2014 Updated note 9 “Limited by T , starting T = 25°C, L = 1mH, R = 50, I = 22A, V =10V”. on page 2 Jmax J G AS GS IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

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