图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: FDPF15N65
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

FDPF15N65产品简介:

ICGOO电子元器件商城为您提供FDPF15N65由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FDPF15N65价格参考。Fairchild SemiconductorFDPF15N65封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 650V 15A(Tc) 38.5W(Tc) TO-220F。您可以下载FDPF15N65参考资料、Datasheet数据手册功能说明书,资料中有FDPF15N65 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 650V 15A TO-220FMOSFET 650V 15A 0.44OHMS NCH POWER TRENCH

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

7 A

Id-连续漏极电流

7 A

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

RoHS 合规性豁免无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Fairchild Semiconductor FDPF15N65UniFET™

数据手册

点击此处下载产品Datasheet

产品型号

FDPF15N65

Pd-PowerDissipation

38.5 W

Pd-功率耗散

38.5 W

RdsOn-Drain-SourceResistance

440 mOhms

RdsOn-漏源导通电阻

440 mOhms

Vds-Drain-SourceBreakdownVoltage

650 V

Vds-漏源极击穿电压

650 V

Vgs-Gate-SourceBreakdownVoltage

+/- 30 V

Vgs-栅源极击穿电压

30 V

上升时间

125 ns

下降时间

65 ns

不同Id时的Vgs(th)(最大值)

5V @ 250µA

不同Vds时的输入电容(Ciss)

3095pF @ 25V

不同Vgs时的栅极电荷(Qg)

63nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

440 毫欧 @ 7.5A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

TO-220F

典型关闭延迟时间

105 ns

功率-最大值

38.5W

包装

管件

单位重量

2.270 g

商标

Fairchild Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3 整包

封装/箱体

TO-220FP-3

工厂包装数量

50

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

50

漏源极电压(Vdss)

650V

电流-连续漏极(Id)(25°C时)

15A (Tc)

系列

FDPF15N65

通道模式

Enhancement

配置

Single

推荐商品

型号:IRFH8330TRPBF

品牌:Infineon Technologies

产品名称:分立半导体产品

获取报价

型号:BSP318SH6327XTSA1

品牌:Infineon Technologies

产品名称:分立半导体产品

获取报价

型号:BSS138-7

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:SIR496DP-T1-GE3

品牌:Vishay Siliconix

产品名称:分立半导体产品

获取报价

型号:PHP160NQ08T,127

品牌:NXP USA Inc.

产品名称:分立半导体产品

获取报价

型号:STD95NH02LT4

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:2SK2943

品牌:Sanken

产品名称:分立半导体产品

获取报价

型号:IXTH20N50D

品牌:IXYS

产品名称:分立半导体产品

获取报价

样品试用

万种样品免费试用

去申请
FDPF15N65 相关产品

BUK625R2-30C,118

品牌:Nexperia USA Inc.

价格:

MTD6N20ET5G

品牌:ON Semiconductor

价格:

FDMS7560S

品牌:ON Semiconductor

价格:¥3.78-¥3.78

SI7457DP-T1-E3

品牌:Vishay Siliconix

价格:

NDS331N

品牌:ON Semiconductor

价格:

FQP9N15

品牌:ON Semiconductor

价格:

2N7000TA

品牌:ON Semiconductor

价格:

STH250N55F3-6

品牌:STMicroelectronics

价格:¥16.98-¥16.98

PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D P F 1 November 2013 5 N 6 FDPF15N65 5 — TM N-Channel UniFET MOSFET N 650 V, 15 A, 440 mΩ -C h a Features Description n n • R = 360 mΩ (Typ.) @ V = 10 V, I = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage e DS(on) GS D l MOSFET family based on planar stripe and DMOS technology. U • Low Gate Charge (Typ. 48.5 nC) This MOSFET is tailored to reduce on-state resistance, and to n • Low Crss (Typ. 23.6 pF) provide better switching performance and higher avalanche iF • 100% Avalanche Tested energy strength. This device family is suitable for switching E T power converter applications such as power factor correction T (PFC), flat panel display (FPD) TV power, ATX and electronic M lamp ballasts. M Applications O S • LCD/LED/PDP TV and Monitor F E • Uninterruptible Power Supply T D G G D S TO-220F S Absolute Maximum Ratings T = 25°C unless otherwise noted. C Symbol Parameter FDPF15N65 Unit V Drain-Source Voltage 650 V DSS I Drain Current - Continuous (T = 25°C) 15* A D C - Continuous (T = 100°C) 9.5* A C IDM Drain Current - Pulsed (Note 1) 60* A V Gate-Source voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 637 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 25.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 38.5 W D C - Derate Above 25°C 0.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C L * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter FDPF15N65 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 3.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDPF15N65 Rev. C1

F Package Marking and Ordering Information D P Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity F 1 FDPF15N65 FDPF15N65 TO-220F Tube N/A N/A 50 units 5 N 6 Electrical Characteristics T = 25°C unless otherwise noted. 5 C — Symbol Parameter Conditions Min. Typ. Max. Unit N Off Characteristics - C BV Drain-Source Breakdown Voltage V = 0 V, I = 250 μA, T = 25°C 650 -- -- V h DSS GS D J a ΔBV Breakdown Voltage Temperature n / ΔTDSS Coefficient ID = 250 μA, Referenced to 25°C -- 0.65 -- V/°C n J e IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 1 μA l U VDS = 520 V, TC = 125°C -- -- 10 μA n i I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA F GSSF GS DS E IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA T T On Characteristics M V Gate Threshold Voltage V = V , I = 250 μA 3.0 -- 5.0 V M GS(th) DS GS D O RDS(on) Static Drain-Source V = 10 V, I = 7.5 A -- 0.36 0.44 Ω S On-Resistance GS D F E gFS Forward Transconductance VDS = 40 V, ID = 7.5 A -- 19.2 -- S T Dynamic Characteristics C Input Capacitance V = 25 V, V = 0 V, -- 2380 3095 pF iss DS GS f = 1 MHz C Output Capacitance -- 295 385 pF oss C Reverse Transfer Capacitance -- 23.6 35.5 pF rss Switching Characteristics t Turn-On Delay Time V = 325 V, I = 15 A, -- 65 140 ns d(on) DD D V = 10 V, R = 21.7 Ω t Turn-On Rise Time GS G -- 125 260 ns r t Turn-Off Delay Time -- 105 220 ns d(off) t Turn-Off Fall Time (Note 4) -- 65 140 ns f Q Total Gate Charge V = 520 V, I = 15 A, -- 48.5 63.0 nC g DS D V = 10 V Q Gate-Source Charge GS -- 14.0 -- nC gs Q Gate-Drain Charge (Note 4) -- 21.2 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 15* A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 15 A -- -- 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 15 A, -- 496 -- ns rr GS S Q Reverse Recovery Charge dIF/dt =100 A/μs -- 5.69 -- μC rr Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 5.23 mH, IAS = 15 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDPF15N65 Rev. C1

F D Typical Performance Characteristics P F 1 5 N Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 5 — V N GS Top : 15.0 V - 10.0 V C 8.0 V h 7.0 V 101 6.5 V a A] 6.0 V A] n Current [ Bottom : 5.5 V Current [ 101 150oC nel U I, Drain D 100 I, Drain D 25oC -55oC niFE * Notes : * Notes : T 12.. 2T5 0=μ s2 5PouClse Test 21.. 2V5DS0 μ=s 4 P0uVlse Test TM 10-110-1 100 101 C 1002 4 6 8 10 12 M V , Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] O DS S F Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage E Drain Current and Gate Voltage Variation vs. Source Current T and Temperatue 1.0 ce 0.8 A] ΩR [],DS(ON)Source On-Resistan 00..46 VGS = 10V erse Drain Current [ 101 150oC 25oC Drain- 0.2 VGS = 20V * Note : T = 25oC I, RevDR * N12..o V2te5Gs0S :μ=s 0 PVulse Test J 0.0 100 0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 5000 12 C = C + C (C = shorted) iss gs gd ds C = C + C oss ds gd V = 130V 4000 Coss Crss = Cgd V] 10 VDS = 325V s [pF] 3000 Ciss Voltage [ 8 VDDSS = 520V ance urce 6 Capacit 12000000 Crss * N12..o Vfte =G ;S 1 = M 0H Vz , Gate-SoGS 24 V * Note : I = 15A D 0 0 10-1 100 101 0 10 20 30 40 50 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G ©2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDPF15N65 Rev. C1

F D Typical Performance Characteristics (Continued) P F 1 5 N Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 6 vs. Temperature vs. Temperature 5 — 1.2 33.0.0 N e - g C BV, (Normalized)DSSSource Breakdown Volta011...901 * Notes : R, (Normalized)DS(ON)R, (Normalized)n-Source On-ResistanceDS(ON)ain-Source On-Resistance11221122....0505....0505 hannel UniFE Drain- 12.. VIDG =S =2 500 V μA DraiDr00.5.5 * * N12 N..o12 VIt..oe VItG sDe=SG s = :S=7 := 5.15 .01 5A 0 VA V TTM D 0.8-100 -50 0 50 100 150 200 00.0-.01-10000 -5-500 00 5500 110000 115500 220000 M TJ, Junction Temperature [oC] TTJJ,, JJuunnccttioionn TTeemmppeerraattuurree [[ooCC]] OS F E T Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 18 102 15 10 μs , Drain Current [A]D 110001 Ois pLeimraittieodn biny TRh DisS (oAn)rea DC100 m10s m1s m1s00 μs I, Drain Current [A]D 1269 I 10-1 * Notes : 1. T = 25 oC 3 C 2. T = 150 oC J 10-2 3. Single Pulse 025 50 75 100 125 150 100 101 102 103 T, Case Temperature [oC] V , Drain-Source Voltage [V] C DS Figure 11. Transient Thermal Response Curve W] C/ D=0.5 ose [onse 100 0.2 np spoRes 0.1 Z(t), Thermal ReθJCZ(t), Thermal θJC 1100--21 000...000215 single pulse * N123P...o DZDTteMθJusJMCt y:(-t )TF =Ca c=3tt o.1P3tr2 D,o MDC *=/ WZt1θ/ JtMC2(ta)x. 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 ©2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDPF15N65 Rev. C1

F D P F 1 5 N 6 5 — N VVGGSS -C SSaammee TTyyppee h 5500KKΩΩ aass DDUUTT QQ a gg n 1122VV 220000nnFF 1100VV n 330000nnFF e l VV VV DDSS U GGSS QQggss QQggdd n i F E DDUUTT T T IG = co33nmmsAAt. M M O CChhaarrggee S F E Figure 12. Gate Charge Test Circuit & Waveform T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDPF15N65 Rev. C1

F D P F 1 5 N 6 5 — DDUUTT ++ N - C h VV a DDSS n n __ e l U n II iF SSDD E LLL T T M M DDrriivveerr O RR S GG SSaammee TTyyppee F aass DDUUTT VVDDDD ET VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDPF15N65 Rev. C1

F D Mechanical Dimensions P F 1 5 N 6 5 — N - C h a n n e l U n i F E T T M M O S F E T Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2006 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDPF15N65 Rev. C1

F D P F 1 5 N 6 5 TRADEMARKS — The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. N - AccuPower™ F-PFS™ Sync-Lock™ C ABXitS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* ha BCCuooirrleedPP itOL NUWoSEw™R™™ GGGrrreeeeeennn B FFrPPidSSg™™e™ e-Series™ PPQorFowEgeTrar®XmSm™able Active Droop™ TTiinnyyBBouocks®t® nne TinyCalc™ l CROSSVOLT™ Gmax™ QS™ TinyLogic® U CTL™ GTO™ Quiet Series™ TINYOPTO™ n Current Transfer Logic™ IntelliMAX™ RapidConfigure™ DEUXPEED® ISOPLANAR™ ™ TinyPower™ iF Dual Cool™ Marking Small Speakers Sound Louder TinyPWM™ E EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ T EfficentMax™ MegaBuck™ SignalWise™ TranSiC™ T TriFault Detect™ M ESBC®™ MMiIcCrRoFOECTO™UPLER™ SSmMaArRtMTa SxT™ART™ TμSReUrEDCesU™RRENT®* M MicroPak™ Solutions for Your Success™ O Fairchild® MicroPak2™ SPM® S FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® FE FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ T FAST® OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2006 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDPF15N65 Rev. C1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FDPF15N65