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  • 型号: STP14NK50Z
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STP14NK50Z产品简介:

ICGOO电子元器件商城为您提供STP14NK50Z由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP14NK50Z价格参考。STMicroelectronicsSTP14NK50Z封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 500V 14A(Tc) 150W(Tc) TO-220AB。您可以下载STP14NK50Z参考资料、Datasheet数据手册功能说明书,资料中有STP14NK50Z 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 500V 14A TO-220MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

14 A

Id-连续漏极电流

14 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STP14NK50ZSuperMESH™

数据手册

点击此处下载产品Datasheet

产品型号

STP14NK50Z

Pd-PowerDissipation

150 W

Pd-功率耗散

150 W

Qg-GateCharge

69 nC

Qg-栅极电荷

69 nC

RdsOn-Drain-SourceResistance

380 mOhms

RdsOn-漏源导通电阻

380 mOhms

Vds-Drain-SourceBreakdownVoltage

500 V

Vds-漏源极击穿电压

500 V

Vgs-Gate-SourceBreakdownVoltage

+/- 30 V

Vgs-栅源极击穿电压

30 V

上升时间

16 ns

下降时间

12 ns

不同Id时的Vgs(th)(最大值)

4.5V @ 100µA

不同Vds时的输入电容(Ciss)

2000pF @ 25V

不同Vgs时的栅极电荷(Qg)

92nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

380 毫欧 @ 6A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

TO-220AB

其它名称

497-4526-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1167/PF64699?referrer=70071840

典型关闭延迟时间

54 ns

功率-最大值

150W

包装

管件

单位重量

1.438 g

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

工具箱

/product-detail/zh/497-8004-KIT/497-8004-KIT-ND/811050

工厂包装数量

50

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

50

正向跨导-最小值

12 S

漏源极电压(Vdss)

500V

电流-连续漏极(Id)(25°C时)

14A (Tc)

系列

STP14NK50Z

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STP14NK50Z - STP14NK50ZFP STB14NK50Z-STB14NK50Z-1-STW14NK50Z Ω 2 2 N-channel 500V - 0.34 - 14A TO-220/FP/D PAK/I PAK/TO-247 TM Zener-protected SuperMESH Power MOSFET General features Type V R I Pw DSS DS(on) D STP14NK50Z 500V <0.38Ω 14A 150W 3 3 STP14NK50ZFP 500V <0.38Ω 14A 35W 12 12 TO-220 TO-220FP STB14NK50Z 500V <0.38Ω 14A 150W STB14NK50Z-1 500V <0.38Ω 14A 150W STW14NK50Z 500V <0.38Ω 14A 150W TO-247 ■ Extremely high dv/dt capability 3 ■ 100% avalanche tested 123 1 I2PAK D2PAK ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number Marking Package Packaging STP14NK50Z P14NK50Z TO-220 Tube STP14NK50ZFP P14NK50ZFP TO-220FP Tube STB14NK50ZT4 B14NK50Z D2PAK Tape & reel STB14NK50Z-1 B14NK50Z I2PAK Tube STW14NK50Z W14NK50Z TO-247 Tube July 2006 Rev 3 1/19 www.st.com 19

Contents STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP TO-247 I2PAK/D2PAK V Drain-source voltage (V = 0) 500 V DS GS V Drain-gate voltage (R = 20KΩ) 500 V DGR GS V Gate-source voltage ± 30 V GS Drain current (continuous) I 14 14(1) 14 A D at T = 25°C C Drain current (continuous) I 7.6 7.6(1) 7.6 A D at T =100°C C I (2) Drain current (pulsed) 48 48(1) 48 A DM P Total dissipation at T = 25°C 150 35 150 W TOT C Derating factor 1.20 0.28 1.20 W/°C Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 4000 KV dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns V Insulation withstand voltage (DC) -- 2500 V ISO TJ Operating junction temperature -55 to 150 °C T Storage temperature stg 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. I ≤13A, di/dt ≤200A/µs,V ≤ V , T ≤ T SD DD (BR)DSS j JMAX Table 2. Thermal data Value Symbol Parameter Unit TO-220 D2PAK TO-220FP TO-247 I2PAK °C/ R Thermal resistance junction-case Max 0.83 3.6 0.83 thj-case W Thermal resistance junction-pcb Max °C/ Rthj-pcb 60 (1) W Thermal resistance junction-ambient °C/ R 62.5 50 thj-a Max W Maximum lead temperature for T 300 °C l soldering purpose 1. When mounted on minimum footprint 3/19

Electrical ratings STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 12 A AR (pulse width limited by Tj Max) Single pulse avalanche energy E 400 mJ AS (starting Tj=25°C, Id=Iar, Vdd=50V) Table 4. Gate-source zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BV Igs=±1mA GSO Gate-source breakdown voltage 30 V (Open Drain) 1.1 Protection features og gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac- 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage ID = 1mA, VGS= 0 500 V V = Max rating, Zero gate voltage drain DS 1 µA IDSS current (VGS = 0) VDS = Max rating, TC 50 µA =125°C Gate body leakage current IGSS (V = 0) VGS = ±20V ±10 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA 3 3.75 4.5 V Static drain-source on RDS(on) resistance VGS= 10V, ID= 6A 0.34 0.38 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS =8V, ID = 6A 12 S C Input capacitance iss 2000 pF Coss Output capacitance VDS =25V, f=1 MHz, VGS=0 238 pF Reverse transfer Crss 55 pF capacitance Coss eq(2). Ecaqpuaivcaitlaennct eoutput VGS=0, VDS =0V to 400V 150 pF Qg Total gate charge 69 92 nC V =400V, I = 12A DD D Qgs Gate-source charge 12 nC V =10V Q Gate-drain charge GS 31 nC gd 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS inceases from 0 to 80% V DSS Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V =250 V, I =6A, td(on) Turn-on delay time RDD=4.7Ω, VD=10V 24 ns t Rise time G GS 16 ns r (see Figure 19) 5/19

Electrical characteristics STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - Table 7. Switching times V =250V, I =6A, td(off) Turn-off delay time RDD=4.7Ω, VD =10V 54 ns t Fall time G GS 12 ns f (see Figure 19) tr(Voff) Off-voltage rise time VDD=400 V, ID=12A, 9.5 ns tf Fall time RG=4.7Ω, VGS=10V 9 ns tc Cross-over time (see Figure 21) 20 ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 12 A I (1) Source-drain current (pulsed) 48 A SDM VSD(2) Forward on voltage ISD=12A, VGS=0 1.6 V I =12A, trr Reverse recovery time SD 470 ns di/dt = 100A/µs, Qrr Reverse recovery charge 3.1 µC V =35V, Tj=150°C I Reverse recovery current DD 13.2 A RRM (see Figure 21) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac- 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 7/19

Electrical characteristics STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 8/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac- Figure 13. Normalized gate threshold voltage Figure 14. Normalized on resistance vs vs temperature temperature Figure 15. Source-drain diode forward Figure 16. Normalized B vs temperature VDSS characteristics Figure 17. Normalized BV vs temperature Figure 18. Maximum avalanche energy vs gso temperature 9/19

Test circuit STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z 3 Test circuit Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 10/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50ZPackage mechani- 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/19

Package mechanical data STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 12/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50ZPackage mechani- TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 13/19

Package mechanical data STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 14/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50ZPackage mechani- TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 15/19

Package mechanical data STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 16/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Packaging me- 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 17/19

Revision history STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z 6 Revision history T able 9. Revision history Date Revision Changes 21-Jun-2004 2 Complete version with curves 26-Jul-2006 3 New template, no content change 18/19

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 19/19