4V Drive Nch MOSFET RSD050N10 Structure Dimensions (Unit : mm) r Silicon N-channel MOSFET o CPT3 (SC-63) 6.5 <SOT-428> 5.1 f 2.3 0.5 Features 1.5 1) Low on-resistance. d 23)) DFarisvte s cwiritccuhitins gc asnp ebeed .simple. e 0.9 5.5 1.59.5 3) Parallel use is easy. 0.75 2.5 d 0.9(1)2.3(2) (3)0.26.53 0.8Min.0.5 1.0 Applications Switching s n n e Packaging specifications Inner circuit g Package CPT3 m ∗1 Type Code TL i Basic ordering unit (pieces) 2500 s m (1) Gate ∗2 (2) Drain e (3) Source Absolute maximum ratings (T =25°C) o *1 ESD Protection Diode a D *2 Body Diode (1) (2) (3) Parameter Symbol Limits Unit c Drain-source voltage V 100 V DSS Gate-source voltage V 20 V GSS w e Continuous I 5.0 A Drain current D Pulsed I **11 20 A DP R Source current Continuous IeS 5.0 A (Body Diode) Pulsed I *1 20 A SP Power dissipation N P *2 15 W D t Channel temperature T 150 °C ch Range of sotorage temperature T 55 to +150 °C stg *1 Pw≦10s, Duty cycle≦1% N *2 Tc=25°C Thermal resistance Parameter Symbol Limits Unit Channel to Case R * 8.33 °C / W th (ch-c) * Tc=25C www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. 1/6 2012.02 - Rev.B

DataSheet RSD050N10 　 Electrical characteristics (T =25°C) a Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I - - ±10 A V =±20V, V =0V GSS GS DS Drain-source breakdown voltage V 100 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 10 A V =100V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D - 135 190 I =5.0A, V =10V D GS r Static drain-source on-state * resistance RDS (on) - 142 200 m ID=5.0A, VGS=4.5V o - 145 205 I =5.0A, V =4.0V D GS Forward transfer admittance l Y l** 2.5 - - S I =5.0A, V =10V fs D DS f Input capacitance C - 530 - pF V =25V iss DS Output capacitance Coss - 50 - pF VGS=0V d Reverse transfer capacitance C - 30 - pF f=1MHz rss Turn-on delay time td(on)** - 10 - ns ID=2.5A,e VDD 50V Rise time tr ** - 15 - ns VGS=10V d Turn-off delay time td(off)** - 45 - ns RL=20 Fall time t ** - 15 - ns R =10 f G s n Total gate charge Q ** - 14 - nC V 50V g DD Gate-source charge Q ** - 1.7 - nC I =5.0A, n gs e D Gate-drain charge Qgd** - 3.0 - nC VGS=10V g *Pulsed m i s Body diode characteristics (Source-Drain) (T =25m °C) a Parameter Symbol Min. Typ. Max.eUnit Conditions Forward Voltage V * - - 1.2 V I =5.0A, V =0V SD s GS o D *Pulsed c w e R e N t o N www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/6 2012.02 - Rev.B

DataSheet RSD050N10 　 Electrical characteristic curves (T =25C) a Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 5 5 V =10.0V GS V =2.5V VGS=10.0V VGS=4.0V GS 4 VGS=4.0V 4 VGS=3.0V VGS=3.0V A] r [ ent : I[A]D 3 VGS=2.5V Current : ID 3 o n Curr 2 Drain 2 f ai Dr d 1 1 Ta=25°C e Ta=25°C pulsed pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 d Drain-Source Voltage : VDS[V] Drain-Source Voltage : VDS[V] s n Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Fig.4 Static Drain-Source On-State Resistance vs. Drain Current n 1000 e10000 V =10V GS Ta=25°C pulsed Static Drain-Source On-State ResistanceR[mΩ]DS(on) pulsed VVVcGGGSSS===441..005VVVo m m DStatic Drain-Source On-State ResistanceR[mΩ]DS(on) e1010000 sig TTTTaaaa====172-225555°°°CC°CC w 100 e 10 0.01 0.1 1 10 0.01 0.1 1 10 R Drain Current : I [A] Drain Current : ID[A] D e Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current N 10000t 10000 NDrain-Source On-State ResistanceR[mΩ]DS(on) o1010000 VpuGlSs=e4d.5V TTTTaaaa====172-225555°°°CC°CC Drain-Source On-State ResistanceR[mΩ]DS(on) 1010000 VpuGlSs=e4dV TTTTaaaa====172-225555°°°CC°CC Static Static 10 10 0.01 0.1 1 10 0.01 0.1 1 10 Drain Current : ID[A] Drain Current : ID[A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/6 2012.02 - Rev.B

DataSheet RSD050N10 　 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 10 VpuDlSs=e1d0V VpuDlSs=e1d0V 10 1 e r c n ard Transfer AdmittaY[S]fs 1 TTTTaaaa====172-225555°°°CC°CC Drain Currnt : I[A]D 0.1 TTTTaaaa====172-225555°°°CC°CC fo w or 0.1 0.01 d F e 0.01 0.001 0.01 0.1 1 10 0.0 d0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID[A] Gate-Source Voltage : VGS[V] s n Fig.9 Source Current vs. Source-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage n 10 e 500 VGS=0V Ta=25°C pulsed pulsed g m e Ta=125°C anc 400 Ta=75°C sist i Source Current : Is [A] 0.11 TTaa==o2-255°°CC m D ain-Source On-State ReR[mΩ]DS(on)e230000 s IIDD==25..50AA Dr c c ati 100 St w e 0.01 0 0.0 0.5 1.0 1.5 0 2 4 6 8 10 RSource-Drain Voltage : VSD[V] Gate-Source Voltage : VGS[V] e Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics N 10000t 10 VDD≒50V Ta=25°C o VGS=10V VDD=50V RTaG==2150°ΩC 8 IPDu=l5sAed N 1000 Pulsed V] tf [GS me : t [ns] 100 td(off) oltage : V 6 Switching Ti 10 td(on) Gate-Source V 4 2 t r 1 0 0.01 0.1 1 10 0 5 10 15 20 Drain Current : ID[A] Total Gate Charge : Qg [nC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/6 2012.02 - Rev.B

DataSheet RSD050N10 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Ta=25°C Ois pliemraitteiodn b iyn Rthis are(Va = 10V) f=1MHz DS(on) GS V =0V GS 1000 10 r citance : C [pF] 100 CCisosss Current : I[ A ]D 1 fPWo= 100μs a Cap Drain PW= 1ms 10 Crss 0.1 Ta=25°C d PW= 10ms Single Pulse Mounted on a ceramic board. DC （30mm ×30mme ×0.8mm) Operation 1 0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 d Drain-Source Voltage : VDS[V] Drain-Source Voltage : VDS[ V ] s n Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width n 10 e Tc=25°C Single Pulse g （）t m r nce : RRtthh((cchh--aa))=(t8)=.3r(3t)°×C/RWth(ch-a) i esista 1 m s R al erm e h T sient 0.1 o D n a Tr d c e aliz m Nor e w 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 R Pulse width : Pw (s) e N t o N www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/6 2012.02 - Rev.B

DataSheet RSD050N10 　 Measurement circuits Pulse width VGS ID VDS 50% 90% 50% RL VGS 10% VDS D.U.T. 10% 10% RG VDD 90% 90% r td(on) tr td(off) tf o ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms f VG VGS ID d VDS Qg RL VGS e IG(Const.) D.U.T. Qgs Qgd VDD d Chnarge s Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform n e g m i s m e o D c w e R e N t o N www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/6 2012.02 - Rev.B

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