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  • 型号: STD5NK40ZT4
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STD5NK40ZT4产品简介:

ICGOO电子元器件商城为您提供STD5NK40ZT4由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STD5NK40ZT4价格参考¥1.69-¥1.74。STMicroelectronicsSTD5NK40ZT4封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 400V 3A(Tc) 45W(Tc) DPAK。您可以下载STD5NK40ZT4参考资料、Datasheet数据手册功能说明书,资料中有STD5NK40ZT4 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 400V 3A DPAKMOSFET N-Ch 400 Volt 3 Amp Zener SuperMESH

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

3 A

Id-连续漏极电流

3 A

品牌

STMicroelectronics

产品手册

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产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STD5NK40ZT4SuperMESH™

数据手册

点击此处下载产品Datasheet

产品型号

STD5NK40ZT4

Pd-PowerDissipation

45 W

Pd-功率耗散

45 W

RdsOn-Drain-SourceResistance

1.8 Ohms

RdsOn-漏源导通电阻

1.8 Ohms

Vds-Drain-SourceBreakdownVoltage

400 V

Vds-漏源极击穿电压

400 V

Vgs-Gate-SourceBreakdownVoltage

+/- 30 V

Vgs-栅源极击穿电压

30 V

上升时间

6 ns

下降时间

11 ns

不同Id时的Vgs(th)(最大值)

4.5V @ 50µA

不同Vds时的输入电容(Ciss)

305pF @ 25V

不同Vgs时的栅极电荷(Qg)

17nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

1.8 欧姆 @ 1.5A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

D-Pak

其它名称

497-2477-2

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1166/PF67243?referrer=70071840

典型关闭延迟时间

22.5 ns

功率-最大值

45W

包装

带卷 (TR)

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-252-3,DPak(2 引线+接片),SC-63

封装/箱体

DPAK-2

工厂包装数量

2500

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

2,500

正向跨导-最小值

2.2 S

漏源极电压(Vdss)

400V

电流-连续漏极(Id)(25°C时)

3A (Tc)

系列

STD5NK40Z

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STP5NK40Z - STP5NK40ZFP STD5NK40Z - STD5NK40Z-1 W N-CHANNEL 400V - 1.47 - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP5NK40Z 400V <1.8W 3A 45W STP5NK40ZFP 400V <1.8W 3A 20W STD5NK40Z 400V <1.8W 3A 45W STD5NK40Z-1 400V <1.8W 3A 45W TYPICALR (on)=1.47W 3 n DS 2 1 EXTREMELY HIGHdv/dtCAPABILITY n TO-220 TO-220FP 100% AVALANCHE TESTED n GATECHARGE MINIMIZED n VERYLOWINTRINSICCAPACITANCES n VERYGOODMANUFACTURING 3 n 3 2 REPEATIBILITY 1 1 IPAK DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- INTERNALSCHEMATICDIAGRAM basedPowerMESH™layout.Inadditiontopushing on-resistancesignificantlydown,specialcareistak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cludingrevolutionaryMDmesh™products. APPLICATIONS HIGHCURRENT,HIGHSPEEDSWITCHING n IDEALFOROFF-LINE POWERSUPPLIES, n ADAPTORS ANDPFC LIGHTING n ORDERINGINFORMATION SALESTYPE MARKING PACKAGE PACKAGING STP5NK40Z P5NK40Z TO-220 TUBE STP5NK40ZFP P5NK40ZFP TO-220FP TUBE STD5NK40ZT4 D5NK40Z DPAK TAPE&REEL STD5NK40Z-1 D5NK40Z IPAK TUBE February2003 1/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 ABSOLUTEMAXIMUMRATINGS Symbol Parameter Value Unit STD5NK40Z STP5NK40Z STP5NK40ZFP STD5NK40Z-1 VDS Drain-sourceVoltage(VGS=0) 400 V VDGR Drain-gateVoltage(RGS=20kW ) 400 V VGS Gate-sourceVoltage ±30 V ID DrainCurrent(continuous)atTC=25°C 3 3(*) 3 A ID DrainCurrent(continuous)atTC=100°C 1.9 1.9(*) 1.9 A IDM((cid:1)) DrainCurrent(pulsed) 12 12(*) 12 A PTOT TotalDissipationatTC=25°C 45 20 45 W DeratingFactor 0.36 0.16 0.36 W/°C VESD(G-S) GatesourceESD(HBM-C=100pF,R=1.5KW) 2800 V dv/dt(1) PeakDiodeRecoveryvoltageslope 4.5 V/ns VISO InsulationWithstandVoltage(DC) - 2500 - V Tj OperatingJunctionTemperature -55to150 °C Tstg StorageTemperature -55to150 °C (cid:1) ( )Pulsewidthlimitedbysafeoperatingarea (1)ISD£ 3A,di/dt£ 200A/µs,VDD£ V(BR)DSS,Tj£ TJMAX. (*)Limitedonlybymaximumtemperatureallowed THERMALDATA TO-220 TO-220FP DPAK Rthj-case ThermalResistanceJunction-caseMax 2.77 6.25 2.77 °C/W Rthj-amb ThermalResistanceJunction-ambientMax 62.5 100 °C/W Tl MaximumLeadTemperatureForSolderingPurpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter MaxValue Unit IAR AvalancheCurrent,RepetitiveorNot-Repetitive 3 A (pulsewidthlimitedbyTjmax) EAS SinglePulseAvalancheEnergy 130 mJ (startingTj=25°C,ID=IAR,VDD=50V) GATE-SOURCEZENERDIODE Symbol Parameter TestConditions Min. Typ. Max. Unit BVGSO Gate-SourceBreakdown Igs=±1mA(OpenDrain) 30 V Voltage PROTECTIONFEATURESOFGATE-TO-SOURCE ZENERDIODES Thebuilt-inback-to-backZenerdiodeshavespecificallybeendesignedtoenhancenotonlythedevice’s ESDcapability,butalsotomakethemsafelyabsorbpossiblevoltagetransientsthatmayoccasionallybe appliedfromgatetosource.InthisrespecttheZenervoltageis appropriatetoachieveanefficientand cost-effectiveinterventiontoprotect thedevice’sintegrity.TheseintegratedZenerdiodes thusavoidthe usageofexternalcomponents. 2/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 ELECTRICALCHARACTERISTICS (TCASE =25°CUNLESSOTHERWISESPECIFIED) ON/OFF Symbol Parameter TestConditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID=1mA,VGS=0 400 V BreakdownVoltage IDSS ZeroGateVoltage VDS=MaxRating 1 µA DrainCurrent(VGS=0) VDS=MaxRating,TC=125°C 50 µA IGSS Gate-bodyLeakage VGS=±20V ±10 µA Current(VDS=0) VGS(th) GateThresholdVoltage VDS=VGS,ID=50µA 3 3.75 4.5 V RDS(on) StaticDrain-sourceOn VGS=10V,ID=1.5A 1.47 1.8 W Resistance DYNAMIC Symbol Parameter TestConditions Min. Typ. Max. Unit gfs(1) ForwardTransconductance VDS=15V,ID=1.5A 2.2 S Ciss InputCapacitance VDS=25V,f=1MHz,VGS=0 305 pF Coss OutputCapacitance 57 pF Crss ReverseTransfer 11.5 pF Capacitance Cosseq.(3) EquivalentOutput VGS=0V,VDS=0Vto400V 44 pF Capacitance SWITCHINGON Symbol Parameter TestConditions Min. Typ. Max. Unit td(on) Turn-onDelayTime VDD=200V,ID=1.5A 9.2 ns tr RiseTime RG=4.7W VGS=10V 6 ns (ResistiveLoadsee,Figure3) Qg TotalGateCharge VDD=320V,ID=3A, 11.7 17 nC Qgs Gate-SourceCharge VGS=10V 2.8 nC Qgd Gate-DrainCharge 5.8 nC SWITCHINGOFF Symbol Parameter TestConditions Min. Typ. Max. Unit td(off) Turn-offDelayTime VDD=200V,ID=1.5A 22.5 ns tf FallTime RG=4.7W VGS=10V 11 ns (ResistiveLoadsee,Figure3) tr(Voff) Off-voltageRiseTime VDD=320V,ID=3A, 8.5 ns tf FallTime RG=4.7W, VGS=10V 7.5 ns tc Cross-overTime (InductiveLoadsee,Figure5) 14.5 ns SOURCEDRAINDIODE Symbol Parameter TestConditions Min. Typ. Max. Unit ISD Source-drainCurrent 3 A ISDM(2) Source-drainCurrent(pulsed) 12 A VSD(1) ForwardOnVoltage ISD=3A,VGS=0 1.6 V trr ReverseRecoveryTime ISD=3A,di/dt=100A/µs 145 ns Qrr ReverseRecoveryCharge VDD=40V,Tj=150°C 464 nC IRRM ReverseRecoveryCurrent (seetestcircuit,Figure5) 6.4 A Note: 1. Pulsed:Pulseduration=300µs,dutycycle1.5%. 2. Pulsewidthlimitedbysafeoperatingarea. 3. Cosseq.isdefinedasaconstantequivalentcapacitancegivingthesamechargingtimeasCosswhenVDSincreasesfrom0to80% VDSS. 3/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 SafeOperatingAreaForTO-220/DPAK/IPAK SafeOperatingAreaForTO-220FP ThermalImpedanceForTO-220/DPAK/IPAK ThermalImpedanceForTO-220FP OutputCharacteristics TransferCharacteristics 4/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Transconductance StaticDrain-sourceOn Resistance GateChargevsGate-sourceVoltage CapacitanceVariations NormalizedGateThresholdVoltagevsTemp. NormalizedOnResistancevsTemperature 5/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Source-drainDiodeForwardCharacteristics NormalizedBVDSS vsTemperature MaximumAvalancheEnergyvsTemperature 6/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Fig.1:UnclampedInductiveLoadTestCircuit Fig.2:UnclampedInductiveWaveform Fig.3:SwitchingTimes TestCircuitFor Fig.4:GateChargetestCircuit ResistiveLoad Fig.5:Test CircuitForInductiveLoadSwitching AndDiodeRecoveryTimes 7/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 TO-220 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 E A C D 1 D L2 1 F 1 G 2 G H Dia. F 2 L5 F L9 L7 L6 L4 P011C 8/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 ¯ F F 1 G H G 2 F 1 2 3 L5 L2 L4 9/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 TO-252 (DPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 10/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 TO-251 (IPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 H C A C2 A3 1 A L2 D L B3 B6 B B5 3 E = B2 = 2 G = = = = 1 L1 0068771-E 11/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULKQTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 *onsalestype 12/13

STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 13/13

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