STP200NF04 STB200NF04 - STB200NF04-1 N-CHANNEL 40V - 120A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET PRELIMINARYDATA TYPE VDSS RDS(on) ID Pw STP200NF04 40V <0.0037W 120A 310W STB200NF04 40V <0.0037W 120A 310W STB200NF04-1 40V <0.0037W 120A 310W STANDARDTHRESHOLDDRIVE n 3 n 100% AVALANCHE TESTED 12 TO-220 I2PAK DESCRIPTION 3 1 ThisMOSFETisthelatestdevelopmentofSTMicro- electronics unique “Single Feature Size™” strip- D2PAK based process. The resulting transistor shows ex- tremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignmentstepsthereforearemarkablemanufactur- ingreproducibility. INTERNALSCHEMATICDIAGRAM APPLICATIONS HIGHCURRENT,HIGHSWITCHINGSPEED n AUTOMOTIVE n ORDERINGINFORMATION SALESTYPE MARKING PACKAGE PACKAGING STP200NF04 P200NF04 TO-220 TUBE STB200NF04T4 B200NF04 D2PAK TAPE&REEL STB200NF04-1 B200NF04 I2PAK TUBE December2003 1/13

STP200NF04 - STB200NF04 - STB200NF04-1 ABSOLUTEMAXIMUMRATINGS Symbol Parameter Value Unit VDS Drain-sourceVoltage(VGS=0) 40 V VDGR Drain-gateVoltage(RGS=20kW ) 40 V VGS Gate-sourceVoltage ±20 V ID(#) DrainCurrent(continuos)atTC=25°C 120 A ID(#) DrainCurrent(continuos)atTC=100°C 120 A IDM((cid:1)) DrainCurrent(pulsed) 480 A PTOT TotalDissipationatTC=25°C 310 W DeratingFactor 2.07 W/°C dv/dt(1) PeakDiodeRecoveryvoltageslope 1.5 V/ns EAS(2) SinglePulseAvalancheEnergy 1.3 J Tj OperatingJunctionTemperature -55to175 °C Tstg StorageTemperature (cid:1) ( )Pulsewidthlimitedbysafeoperatingarea (1)ISD£ 120A,di/dt£ 500A/µs,VDD£ V(BR)DSS,Tj£ TJMAX. (2)StartingTj=25°C,Id=60A,VDD=30V (#)CurrentLimitedbyPackage THERMALDATA TO-220/I2PAK/D2PAK Rthj-case ThermalResistanceJunction-caseMax 0.48 °C/W Rthj-pcb ThermalResistanceJunction-pcbMax SeeCurveonpage4 °C/W Rthj-amb ThermalResistanceJunction-ambient(Freeair)Max 62.5 °C/W Tl MaximumLeadTemperatureForSolderingPurpose 300 °C ELECTRICALCHARACTERISTICS (TCASE =25°CUNLESSOTHERWISE SPECIFIED) ON/OFF Symbol Parameter TestConditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID=250µA,VGS=0 40 V BreakdownVoltage IDSS ZeroGateVoltage VDS=MaxRating 1 µA DrainCurrent(VGS=0) VDS=MaxRating,TC=125°C 10 µA IGSS Gate-bodyLeakage VGS=±20V ±100 nA Current(VDS=0) VGS(th) GateThresholdVoltage VDS=VGS,ID=250µA 2 4 V RDS(on) StaticDrain-sourceOn VGS=10V,ID=90A 0.0037 W Resistance 2/13

STP200NF04 - STB200NF04 - STB200NF04-1 ELECTRICALCHARACTERISTICS (CONTINUED) DYNAMIC Symbol Parameter TestConditions Min. Typ. Max. Unit gfs(1) ForwardTransconductance VDS=15V,ID=90A 150 S Ciss InputCapacitance VDS=25V,f=1MHz,VGS=0 5100 pF Coss OutputCapacitance 1600 pF Crss ReverseTransfer 600 pF Capacitance SWITCHINGON Symbol Parameter TestConditions Min. Typ. Max. Unit td(on) Turn-onDelayTime VDD=20V,ID=90A 30 ns tr RiseTime RG=4.7W VGS=10V 320 ns (ResistiveLoadsee,Figure3) Qg TotalGateCharge VDD=20V,ID=120A, 170 210 nC Qgs Gate-SourceCharge VGS=10V 30 nC Qgd Gate-DrainCharge (see,Figure4) 45 nC SWITCHINGOFF Symbol Parameter TestConditions Min. Typ. Max. Unit td(off) Turn-offDelayTime VDD=20V,ID=90A 140 ns tf FallTime RG=4.7W VGS=10V 120 ns (ResistiveLoadsee,Figure3) SOURCEDRAINDIODE Symbol Parameter TestConditions Min. Typ. Max. Unit ISD Source-drainCurrent 120 A ISDM(2) Source-drainCurrent(pulsed) 480 A VSD(1) ForwardOnVoltage ISD=120A,VGS=0 1.3 V trr ReverseRecoveryTime ISD=120A,di/dt=100A/µs 85 ns Qrr ReverseRecoveryCharge VDD=30V,Tj=150°C 190 nC IRRM ReverseRecoveryCurrent (seetestcircuit,Figure5) 4.5 A Note: 1. Pulsed:Pulseduration=300µs,dutycycle1.5%. 2. Pulsewidthlimitedbysafeoperatingarea. 3/13

STP200NF04 - STB200NF04 - STB200NF04-1 ThermalResistanceRthj-avsPCBCopperArea MaxPowerDissipationvsPCBCopperArea 4/13

STP200NF04 - STB200NF04 - STB200NF04-1 AllowableIavvs. TimeinAvalanche Thepreviouscurvegivesthesafeoperatingareaforunclampedinductiveloads,singlepulseorrepetitive, underthefollowingconditions: P =0.5*(1.3*BV *I ) D(AVE) DSS AV EAS(AR)=PD(AVE) *tAV Where: IAV is theAllowableCurrentinAvalanche PD(AVE)istheAveragePowerDissipationinAvalanche(SinglePulse) tAVis theTimeinAvalanche Toderateabove25°C,at fixedIAV,thefollowingequationmustbeapplied: I =2*(T -T )/(1.3*BV *Z ) AV jmax CASE DSS th Where: Z =K *R isthevaluecomingfromNormalizedThermalResponseatfixedpulsewidthequaltoT . th th AV 5/13

STP200NF04 - STB200NF04 - STB200NF04-1 SPICE THERMAL MODEL Parameter Node Value CTHERM1 1-2 1.4958E-3 CTHERM2 2-3 3.5074E-2 CTHERM3 3-4 5.939E-2 CTHERM4 4-5 9.7411E-2 CTHERM5 5-6 8.8596E-2 CTHERM6 6-7 8.2755E-1 RTHERM1 1-2 0.0384 RTHERM2 2-3 0.0624 RTHERM3 3-4 0.072 RTHERM4 4-5 0.0912 RTHERM5 5-6 0.1008 RTHERM6 6-7 0.1152 6/13

STP200NF04 - STB200NF04 - STB200NF04-1 Fig.1:UnclampedInductiveLoadTestCircuit Fig.2:UnclampedInductiveWaveform Fig.3:SwitchingTimes TestCircuitFor Fig.3.1:InductiveLoadSwitchingAndDiodeRe- covery Times Waveform ResistiveLoad Fig.4:GateChargetest Circuit Fig.4.1:GateChargetestWaveform 7/13

STP200NF04 - STB200NF04 - STB200NF04-1 Fig.5:TestCircuitForDiodeRecovery Times Fig.5.1:DiodeRecoveryTimesWaveform 8/13

STP200NF04 - STB200NF04 - STB200NF04-1 TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 9/13

STP200NF04 - STB200NF04 - STB200NF04-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 8º 3 10/13 1

STP200NF04 - STB200NF04 - STB200NF04-1 TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 11/13

STP200NF04 - STB200NF04 - STB200NF04-1 2 D PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULKQTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 *onsalestype 12/13

STP200NF04 - STB200NF04 - STB200NF04-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 13/13