PolarPTM IXTA10P50P V = - 500V DSS Power MOSFET IXTP10P50P I = - 10A D25 IXTQ10P50P R  1 P-Channel Enhancement Mode DS(on) IXTH10P50P Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G S D G D (Tab) DS D (Tab) S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 500 V DSS J V T = 25C to 150C, R = 1M - 500 V DGR J GS V Continuous 20 V GSS G V Transient 30 V D GSM S D (Tab) I T = 25C - 10 A D25 C I T = 25C, Pulse Width Limited by T - 30 A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25C - 10 A A C E T = 25C 1.5 J AS C dv/dt I  I , V  V , T  150C 10 V/ns S DM DD DSS J P T = 25C 300 W D C Features T -55 ... +150 C J TJM 150 C International Standard Packages T -55 ... +150 C stg Avalanche Rated T 1.6mm (0.062 in.) from Case for 10s 300 C Rugged PolarPTM Process L T Plastic Body for 10s 260 C Low Package Inductance SOLD Fast Intrinsic Diode M Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in d Weight TO-263 2.5 g TO-220 3.0 g Advantages TO-3P 5.5 g TO-247 6.0 g  Easy to Mount  Space Savings  High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 500 V DSS GS D  High-Side Switches V V = V , I = - 250A - 2.0 - 4.5 V GS(th) DS GS D  Push Pull Amplifiers I V = 20V, V = 0V 100 nA  DC Choppers GSS GS DS  Automatic Test Equipment I V = V , V = 0V - 10 A DSS DS DSS GS  Current Regulators T = 125C - 250 A J R V = -10V, I = 0.5 • I , Note 1 1  DS(on) GS D D25 © 2015 IXYS CORPORATION, All Rights Reserved DS99911D(2/15)

IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 • I , Note 1 6.5 11 S fs DS D D25 C 2840 pF iss C V = 0V, V = - 25V, f = 1MHz 275 pF oss GS DS C 42 pF rss t 20 ns d(on) Resistive Switching Times t 28 ns r V = -10V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D D25 52 ns d(off) R = 3.3 (External) t G 44 ns f Q 50 nC g(on) Q V = -10V, V = 0.5 • V , I = 0.5 • I 17 nC gs GS DS DSS D D25 Q 18 nC gd R 0.42C/W thJC R (TO-3P & TO-247) 0.25 C/W thCS (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 10 A S GS I Repetitive, Pulse Width Limited by T - 40 A SM JM V I = - 5A, V = 0V, Note 1 - 3 V SD F GS t 414 ns rr I = - 5A, -di/dt = -100A/s Q F 5.90 C RM V = -100V, V = 0V I R GS - 28.6 A RM Note 1: Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC -10 -26 -9 VGS = -10V VGS = -10V - 7V - 8V -22 -8 -7 -18 - 7V es -6 - 6V es per per -14 m -5 m A A - D -4 - D -10 - 6V I I -3 -6 -2 - 5V - 5V -1 -2 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 0 -4 -8 -12 -16 -20 -24 -28 -32 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = - 5A Value vs. Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature -10 2.6 -9 V G S = -- 71V0V VGS = -10V 2.2 -8 peres --76 - 6V malized 1.8 I D = -10A Am -5 Nor 1.4 I D = - 5A I - D -4 - on) S( D 1.0 -3 - 5V R -2 0.6 -1 0 0.2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 25 50 75 100 125 150 V - Volts T - Degrees Centigrade DS J Fig. 5. RDS(on) Normalized to ID = - 5A Value vs. Fig. 6. Maximum Drain Current vs. Drain Current Case Temperature 2.4 -11 2.2 VGS = -10V -9 2.0 TJ = 125ºC d e z ormali 1.8 peres -7 N 1.6 m - S(on) 1.4 I - AD -5 D R 1.2 -3 TJ = 25ºC 1.0 -1 0.8 -2 -6 -10 -14 -18 -22 -26 -50 -25 0 25 50 75 100 125 150 ID - Amperes Tc - Degrees Centigrade © 2015 IXYS CORPORATION, All Rights Reserved

IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Fig. 7. Input Admittance Fig. 8. Transconductance -16 24 TJ = - 40ºC -14 20 -12 16 25ºC s -10 s e n mper -8 eme 12 A TJ = 125ºC Si 125ºC I - D -6 - 4205ººCC g - f s 8 -4 4 -2 0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -30 -10 -9 VDS = - 250V -25 -8 I D = - 5A I G = -1mA -7 -20 - AmperesS -15 TJ = 125ºC V - VoltsGS ---654 I -10 TJ = 25ºC -3 -2 -5 -1 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 5 10 15 20 25 30 35 40 45 50 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 -100 f = 1 MHz RDS(on) Limit s Farad1,000 Ciss -10 2150µ0sµs e - Pico mperes 1ms acitanc 100 Coss I - AD-1 DC 1100m0mss p a C TJ = 150ºC Crss TC = 25ºC Single Pulse 10 -0.1 0 -5 -10 -15 -20 -25 -30 -35 -40 -10 -100 -1000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Fig. 13. Maximum Transient Thermal Impedance 1 W C / - ºC 0.1 h)J Z(t 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved

IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P TO-263 (IXTA) Outline TO-247 (IXTH) Outline P 1 2 3 e Terminals: 1 - Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 TO-220 (IXTP) Outline TO-3P (IXTQ) Outline Pins: 1 - Gate 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_10P50P(B5)5-21-08-B

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