ZXMHC10A07T8 Green COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Device BVDSS RDS(ON) max TAI D= m+2a5x° C  2L oxw N O +n -2R xe sPi sCtahnacnen els in a SOIC Package 0.7Ω @ VGS = 10V 1.4A  Low Input Capacitance N-Channel 100V T 0.9Ω @ VGS = 6V 1.1A  Fast Switching Speed CON P-Channel -100V 1.0Ω @ VGS = -10V -1.3A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2) U 1.45Ω @ VGS = -6V -0.9A  Halogen and Antimony Free. “Green” Device (Note 3) DTI OA Description Mechanical Data RM PR This new generation complementary MOSFET H-Bridge features low  Case: SM-8 (8 LEAD SOT223) W O on-resistance achievable with low gate drive.  Case Material: Molded Plastic, "Green" Molding Compound; F E UL Flammability Classification Rating 94V-0 N N  Moisture Sensitivity: Level 1 per J-STD-020 I Applications  Terminal Connections Indicator: See Diagram E C  DC Motor Control  Terminals: Finish  Matte Tin Annealed over Copper Leadframe; N  DC-AC Inverters Solderable per MIL-STD-202, Method 208 A  Weight: 0.117 grams (Approximate) V D A SM-8 PIN1 G3 G4 S2 S3 D3 D4 G2 S1S4 G1 D1 D2 Top View Pin CToopn fVigiuerwa tion Internal Schematic Ordering Information (Note 4) Part Number Reel Size Tape Width Quantity per Reel ZXMHC10A07T8TA 7’’ 12mm 1,000 units Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SM-8 ZXMHC10A07 = Product Type Marking Code ZXMHC W YWW = Date Code Marking 10A07 W Y or Y = Last Digit of Year (ex: 5= 2015) Y WW or WW = Week Code (01~53) ZXMHC10A07T8 1 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol N-channel P-channel Units Drain-Source Voltage VDSS 100 -100 V Gate-Source Voltage VGSS ±20 ±20 V TA = +25°C (Note 6) 1.1 -0.9 Steady Continuous Drain Current, VGS = 10V (Note 8) State TA = +70°C (Note 6) ID 0.9 -0.8 A T TA = +25°C (Note 5) 1.0 -0.8 CN Maximum Body Diode Forward Current (Note 6) IS 2.3 -2.2 A O U Pulsed Drain Current (Note 7) IDM 5.2 -4.5 A I DT Pulsed Source Current (Note 7) ISM 5.2 -4.5 A OA RM POR Thermal Characteristics (@TA = +25°C, unless otherwise specified.) W F Characteristic Symbol Value Units E N Total Power Dissipation (Note 8) 1.3 W N I Linear Derating Factor TA = +25°C (Note 5) PD 10.4 mW/°C E Total Power Dissipation (Note 8) 1.3 W C Linear Derating Factor TA = +25°C (Note 6) PD mW/°C N Steady State (Note 5) 94.5 °C/W A Thermal Resistance, Junction to Ambient (Note 8) Steady State (Note 6) RθJA 73.3 °C/W V D Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C A Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink split into two equal areas one for each drain connection. 6. For a device surface mounted on FR4 PCB measured at t 10 seconds. 7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300μs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 8. For device with one active die. ZXMHC10A07T8 2 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1.0 μA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 10) T N Gate Threshold Voltage VGS(TH) 2.0 — 4.0 V VDS = VGS, ID = 250μA UCIO Static Drain-Source On-Resistance (Note 9) RDS(ON) —— —— 00..79 Ω VVGGSS == 16.00VV, ,I IDD = = 1 1..50AA DT Forward Transfer Admittance (Notes 9 & 11) gfs — 1.6 — S VDS = 15V, ID = 1.0A ROMA DDiYoNdeA MFoICrw CarHdA VRoAltCagTeE (RNISotTeI C9)S (Note 11) VSD — — 0.95 V VGS = 0V, IS = 1.5A PR Input Capacitance Ciss — 138 — W FO Output Capacitance Coss — 12 — pF Vf =D S1 M= H60zV , VGS = 0V, EN Reverse Transfer Capacitance Crss — 6 — NE I TGoattael- SGoauterc Ceh Cahrgaerg e QQggs —— 20..97 —— nC V10DVS = 50V, ID = 1.0A, VGS = C Gate-Drain Charge Qgd — 1.0 — N Turn-On Delay Time tD(ON) — 1.8 — A Turn-On Rise Time tR — 1.5 — ns VDD = 50V, VGS = 10V, V Turn-Off Delay Time tD(OFF) — 4.1 — ID = 1.0A, RG = 6.0Ω D Turn-Off Fall Time tF — 2.1 — A RReevveerrssee RReeccoovveerryy TCihmaerg e tQRRrr —— 2172 —— nnCs IS = 1.8A, di/dt = 100A/μs Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS -100 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1.0 μA VDS = -100V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(TH) -2.0 — -4.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance (Note 9) RDS(ON) —— —— 11.4.05 Ω VVGGSS == --16.00VV,, IIDD == - -00.6.5AA Forward Transfer Admittance (Notes 9 & 11) gfs — 1.2 — S VDS = -15V, ID = -0.6A Diode Forward Voltage (Note 9) VSD — -0.85 -0.95 V VGS = 0V, IS = -0.75A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss — 141 — pF Output Capacitance Coss — 13.1 — pF Vf =D S1 M= H-5z0 V , VGS = 0V, Reverse Transfer Capacitance Crss — 10.8 — pF Gate Charge (VGS = -5.0V) Qg — 1.6 — nC TGoattael- SGoauterc Ceh Cahrgaerg (eV GS = -10V) QQggs —— 30..56 —— nnCC VDS = -50V, ID = -0.6A Gate-Drain Charge Qgd — 1.6 — nC Turn-On Delay Time tD(ON) — 1.6 — ns Turn-On Rise Time tR — 2.1 — ns VDD = -50V, VGS = -10V, Turn-Off Delay Time tD(OFF) — 5.9 — ns RG = 6.0Ω, ID = -1.0A Turn-Off Fall Time tF — 3.3 — ns RReevveerrssee RReeccoovveerryy TCihmaerg e tQRRrr —— 2391 —— nnCs IS = -0.9A, di/dt = 100A/μs Notes: 9. Measured under pulsed conditions. Width≤300μs. Duty cycle ≤ 2%. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. ZXMHC10A07T8 3 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 Typical Characteristics T N C O U I DT OA RM PR O W F E N N I E C N A V D A ZXMHC10A07T8 4 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 Typical Characteristics (N-Channel) T N C O U I DT OA RM PR O W F E N N I E C N A V D A ZXMHC10A07T8 5 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 Typical Characteristics (N-Channel) (Cont.) T N C O U I DT OA RM PR O W F E N N I E C N A V D A ZXMHC10A07T8 6 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 Typical Characteristics (P-Channel) T N C O U I DT OA RM PR O W F E N N I E C N A V D A ZXMHC10A07T8 7 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 Typical Characteristics (P-Channel) (Cont.) T N C O U I DT OA RM PR O W F E N N I E C N A V D A ZXMHC10A07T8 8 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A Seating Plane T SM-8 N C Dim Min Max Typ O U A -- 1.70 1.60 DTI D A1 0.02 0.10 0.04 OA e1 b 0.70 0.90 0.80 RM c 0.24 0.32 0.28 L D 6.30 6.70 6.60 PR e 1.53 REF O W e1 4.59 REF F EN ø E 6.70 7.30 7.00 N E1 3.30 3.70 3.50 I E E E1 ØL 0.-7- 5 1.-0- 0 04.59°0 C Ø1 -- 15° -- N ø1 c Ø2 -- -- 10° A All Dimensions in mm V D A b e ø2 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Dimensions Value (in mm) C 1.52 C1 4.60 C1 Y1 X 0.95 Y 2.80 Y1 6.80 X C ZXMHC10A07T8 9 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXMHC10A07T8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the T N atrpapdleicmaatiorkn riogrh utss,e n oorf tthheis ridgohctsu mofe ontth oerr sa. n yA npyr oCduusctto dmeesrc orirb eudse hr eorfe tihni;s n deoitchuemr ednote osr Dpirooddeusc tIsn cdoerspcorirbaetedd h ceorenivne iyn asnuyc hli caepnpsliec autinodnes rs ihtsa lpl aatsesnutm oer CO all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated U website, harmless against all damages. I DT OA Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. RM Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or PR indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. W O F Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings E N noted herein may also be covered by one or more United States, international or foreign trademarks. N I E This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. C N LIFE SUPPORT A V Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express D written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com ZXMHC10A07T8 10 of 10 March 2015 Document number: DS33510 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

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