IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface mount V (V) -200 • Available in tape and reel DS • Dynamic dV/dt rating RDS(on) () VGS = -10 V 0.80 • Repetitive avalanche rated Available Q max. (nC) 29 g • P-channel Qgs (nC) 5.4 • Fast switching Available Q (nC) 15 • Ease of paralleling gd • Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc?99912 Note S * This datasheet provides information about parts that are D2PAK (TO-263) RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G D cost-effectiveness. S D The D2PAK (TO-263) is a surface mount power package P-Channel MOSFET capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF9630S-GE3 SiHF9630STRL-GE3 a IRF9630SPbF IRF9630STRLPbF a Lead (Pb)-free SiHF9630S-E3 SiHF9630STL-E3 a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -200 DS V Gate-Source Voltage V ± 20 GS T = 25 °C -6.5 C Continuous Drain Current V at -10 V I GS D T = 100 °C -4.0 A C Pulsed Drain Current a I -26 DM Linear Derating Factor 0.59 W/°C Linear Derating Factor (PCB mount) e 0.025 Single Pulse Avalanche Energy b E 500 mJ AS Avalanche Current a I -6.4 A AR Repetitive Avalanche Energy a E 7.4 mJ AR Maximum Power Dissipation T = 25 °C 74 C P W Maximum Power Dissipation (PCB mount) e T = 25 °C D 3.0 A Peak Diode Recovery dV/dt c dV/dt -5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg °C Soldering Recommendations (Peak temperature) d for 10 s 300 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12). c. ISD  -6.5 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S16-0754-Rev. D, 02-May-16 1 Document Number: 91085 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA Maximum Junction-to-Ambient  R - 40 °C/W (PCB mount) a thJA Maximum Junction-to-Case (Drain) R - 1.7 thJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 μA -200 - - V DS GS D VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C Gate-Source Threshold Voltage V V = V , I = -250 μA -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 100 nA GSS GS V = -200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I μA DSS V = -160 V, V = 0 V, T = 125 °C - - -500 DS GS J Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = -3.9 A b - - 0.80  Forward Transconductance g V = -50 V, I = -3.9 A b 2.8 - - S fs DS D Dynamic Input Capacitance C - 700 - iss V = 0 V, GS Output Capacitance C V = -25 V, - 200 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 40 - rss Total Gate Charge Q - - 29 g I = -6.5 A, V = -160 V, Gate-Source Charge Q V = -10 V D DS - - 5.4 nC gs GS see fig. 6 and 13 b Gate-Drain Charge Q - - 15 gd Turn-On Delay Time t - 12 - d(on) Rise Time tr VDD = -100 V, ID = -6.5 A, - 27 - ns Turn-Off Delay Time td(off) Rg = 12 , RD = 15 , see fig. 10 b - 28 - Fall Time t - 24 - f Internal Drain Inductance L Between lead, D - 4.5 - D 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 7.5 - S Gate Input Resistance Rg f = 1 MHz, open drain 0.6 - 3.7  Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS showing the  D - - -6.5 A integral reverse Pulsed Diode Forward Current a ISM p - n junction diode G - - -26 S Body Diode Voltage V T = 25 °C, I = -6.5 A, V = 0 V b - - -6.5 V SD J S GS Body Diode Reverse Recovery Time t - 200 300 ns rr T = 25 °C, I = -6.5 A, dI/dt = 100 A/μs b J F Body Diode Reverse Recovery Charge Q - 1.9 2.9 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S16-0754-Rev. D, 02-May-16 2 Document Number: 91085 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS nce 3.0 ID = - 6.5 A n Current (A) 101 BToopttom-------- 1187655450......000505 VV VVVVVV - 4.5 V ource On Resistamalized) 122...505 VGS = - 10 V - I, DraiD 100 Drain-to-S(Nor 1.0 20 µs Pulse Width , n) 0.5 o 10-1 TC = 25 °C RDS( 0.0 10-1 100 101 - 60- 40- 20 0 20 40 60 80 100120140160 91085_01 - VDS, Drain-to-Source Voltage (V) 91085_04 TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature C Top -V 1G5S V 1200 VCGS == C0 V, +f =C 1 ,M CHz Shorted 101 - 10 V 1000 Ciss = Cgs gd ds rss gd A) - 8.0 V Coss = Cds + Cgd , Drain Current (D 100 Bottom ----- 76554.....00505 VVVVV - 4.5 V Capacitance (pF) 864000000 Ciss - I Coss 200 20 µs Pulse Width C T = 150 °C rss 10-1 C 0 10-1 100 101 100 101 91085_02 - VDS, Drain-to-Source Voltage (V) 91085_05 - VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, T = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage C 20 I = - 6.5 A V) D e ( VDS = - 160 V nt (A) 101 25 °C 150 °C Voltag 16 VDS = - 100 V Curre urce 12 VDS = - 40 V n So , DraiD ate-to- 8 - I 100 , GS 4 20 µs Pulse Width VG For test circuit VDS = - 50 V - see figure 13 0 4 5 6 7 8 9 10 0 5 10 15 20 25 30 91085_03 - VGS, Gate-to-Source Voltage (V) 91085_06 QG, Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-0754-Rev. D, 02-May-16 3 Document Number: 91085 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix 7.0 A) nt ( 101 6.0 Curre 150 °C nt (A) 5.0 ain 25 °C urre 4.0 Dr C se 100 ain 3.0 er Dr , RevD - I, D 2.0 S 1.0 - I V = 0 V GS 10-1 0.0 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 91085_07 - VSD, Source-to-Drain Voltage (V) 91085_09 TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature R D 103 Operation in this area limited VDS 5 by R DS(on) V 2 GS D.U.T. A) 102 Rg nt ( 5 +-VDD urre 2 10 µs - 10 V C 10 100 µs n Pulse width ≤ 1 µs ai 5 Duty factor ≤ 0.1 % Dr 1 ms - I, D 12 10 ms Fig. 10a - Switching Time Test Circuit 5 TC = 25 °C T = 150 °C 2 J t t t t Single Pulse d(on) r d(off) f 0.1 VGS 0.1 2 5 1 2 5 10 2 5 102 2 5 103 10 % 91085_08 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 90 % V DS Fig. 10b - Switching Time Waveforms 10 )C hJ Zt e ( 1 D = 0.5 s n o esp 00..21 PDM R mal 0.1 0.05 t1 er 0.02 t2 Th 0.01 Single Pulse Notes: (Thermal Response) 1. Duty Factor, D = t/t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91085_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. D, 02-May-16 4 Document Number: 91085 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix L V DS Vary tp to obtain QG required I - 10 V AS R D.U.T. Q Q g - GS GD +V DD I AS V G - 10 V t 0.01 Ω p Charge Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform Current regulator I Same type as D.U.T. AS 50 kΩ V 12 V 0.2 µF DS 0.3 µF - V VDD D.U.T. + DS t p V GS V DS - 3 mA I I Fig. 12b - Unclamped Inductive Waveforms G D Current sampling resistors Fig. 13b - Gate Charge Test Circuit 1200 I D J) Top - 2.9 A m 1000 - 4.1 A y ( Bottom - 6.5 A g er 800 n E e s 600 ul P e gl 400 n Si , S 200 A E V = - 50 V DD 0 25 50 75 100 125 150 91085_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S16-0754-Rev. D, 02-May-16 5 Document Number: 91085 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129)(cid:129) IDSD.U c.oTn. t-r odlelevdic be yu dnduteyr ftaecsttor “D” - VDD Note (cid:129) Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period V = - 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = - 5 V for logic level and - 3 V drive devices GS Fig. 14 - For P-Channel      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91085. S16-0754-Rev. D, 02-May-16 6 Document Number: 91085 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 4 A A B E c2 H 4 L1 4 Gauge plane 0° to 8° B D 5 Detail A Seating plane H 1 2C 3 C L3 L L4 A1 Detail “A” L2 Rotated 90° CW BB BB scale 8:1 A 2 x b2 2 x b c E 0.010M AM B ± 0.004M B 2 x e Base Plating 5 metal D1 4 b1, b3 (c) c1 5 (b, b2) Lead tip Section B - B and C - C E1 4 Scale: none View A - A MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 www.vishay.com Revision: 15-Sep-08 1

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: IRF9630STRLPBF IRF9630STRRPBF IRF9630SPBF IRF9630S IRF9630STRL SIHF9630S-GE3 SIHF9630STRL- GE3