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F D M S March 2016 8 3 2 FDMS8320L 0 L ® N N-Channel PowerTrench MOSFET - C 40 V, 248 A, 1.1 mΩ h a Features General Description n n e (cid:132) Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A This N-Channel MOSFET has been designed specifically to l (cid:132) Max r = 1.5 mΩ at V = 4.5 V, I = 27 A improve the overall efficiency and to minimize switch node P DS(on) GS D ringing of DC/DC converters using either synchronous or o (cid:132) Advanced Package and Silicon combination for low r w DS(on) conventional switching PWM controllers.It has been optimized and high efficiency e for low gate charge, low rDS(on), fast switching speed ang body r (cid:132) Next generation enhanced body diode technology, diode reverse recovery performance. Tr engineered for soft recovery e Applications n c (cid:132) MSL1 robust package design h (cid:132) OringFET / Load Switching ® (cid:132) 100% UIL tested M (cid:132) Synchronous Rectification (cid:132) RoHS Compliant O (cid:132) DC-DC Conversion S F E T Top Bottom Pin 1 S S D S S G Pin 1 S D S D D D D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C (Note 5) 248 C -Continuous T = 100 °C (Note 5) 157 I C A D -Continuous T = 25 °C (Note 1a) 36 A -Pulsed (Note 4) 943 E Single Pulse Avalanche Energy (Note 3) 264 mJ AS Power Dissipation T = 25 °C 104 P C W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.2 θJC °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8320L FDMS8320L Power 56 13 ’’ 12 mm 3000 units ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8320L Rev.1.2

Electrical Characteristics F TJ = 25 °C unless otherwise noted. D M Symbol Parameter Test Conditions Min. Typ. Max. Units S Off Characteristics 8 3 BV Drain to Source Breakdown Voltage I = 250 μA, V = 0 V 40 V 2 DSS D GS 0 ΔBV Breakdown Voltage Temperature L ΔTDJSS Coefficient ID = 250 μA, referenced to 25 °C 21 mV/°C N IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA -C I Gate to Source Leakage Current V = ±20 V, V = 0 V 100 nA h GSS GS DS a On Characteristics n n e V Gate to Source Threshold Voltage V = V , I = 250 μA 1.0 1.7 3.0 V GS(th) GS DS D l ΔV Gate to Source Threshold Voltage P ΔTGS(th) Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 mV/°C o J w VGS = 10 V, ID = 32 A 0.8 1.1 e r r Static Drain to Source On Resistance V = 4.5 V, I = 27 A 1.0 1.5 mΩ T DS(on) GS D r V = 10 V, I = 32 A, T = 125 °C 1.2 1.7 e GS D J n gFS Forward Transconductance VDS = 5 V, ID = 32 A 206 S c h Dynamic Characteristics ® C Input Capacitance 8350 11110 pF M iss C Output Capacitance VDS = 20 V, VGS = 0 V, 2840 3780 pF O oss f = 1 MHz S Crss Reverse Transfer Capacitance 169 295 pF F E R Gate Resistance 0.1 1.3 2.6 Ω g T Switching Characteristics t Turn-On Delay Time 17 30 ns d(on) tr Rise Time VDD = 20 V, ID = 32 A, 19 35 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 68 110 ns t Fall Time 17 30 ns f Q Total Gate Charge V = 0 V to 10 V 121 170 nC g GS Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 20 V, 58 117 nC Qgs Gate to Source Charge ID = 32 A 19.2 nC Q Gate to Drain “Miller” Charge 16.5 nC gd Drain-Source Diode Characteristics I Diode Continuous Forward Current T = 25 °C 248 A s C I Diode Pulse Current T = 25 °C 943 A s, pulse C V = 0 V, I = 2.1 A (Note 2) 0.65 1.1 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 32 A (Note 2) 0.74 1.2 GS S t Reverse Recovery Time 68 108 ns rr I = 32 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 59 95 nC rr t Reverse Recovery Time 53 85 ns rr I = 32 A, di/dt = 300 A/μs Q Reverse Recovery Charge F 104 167 nC rr Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design. a) 50 °C/W when mounted on a b) 125 °C/W when mounted on a 1 in2 pad of 2 oz copper minimum pad of 2 oz copper. GDDSS GDDSS FSFS FSFS 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 42 A, VDD = 36 V, VGS = 10 V. 4. Pulsed Id please refer to Fig 11 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. FDMS8320L Rev.1.2 2 www.fairchildsemi.com

F D Typical Characteristics M T = 25 °C unless otherwise noted. J S 8 3 2 150 VGS = 10 V E 5 PULSE DURATION = 80 μs 0L URRENT (A)19200 VGVVSGG =SS =3= . 454 .VV5 V VGS = 3 V ALIZEDE ON-RESISTANC 34 DUTY CYCVLGES == 03. 5V% MAX N-Chann AIN C 60 NORMOURC 2 VGS = 3.5 V el P DR O S o I, D 30 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs DRAIN T 1 VGS = 4 V VGS = 4.5 V VGS = 10 V werT 0 0 r 0 0.2 0.4 0.6 0.8 1.0 0 30 60 90 120 150 e n VDS, DRAIN TO SOU RCE VOLTAGE (V) ID, DRAIN CURR ENT (A) c h ® Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance M vs. Drain Current and Gate Voltage O S F 1.6 5 E STANCE 11..45 IVDG =S 3=2 1 A0 V ()mE Ω 4 ID = 32 A PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs T NORMALIZED TO SOURCE ON-RESI 01111.....90123 rDRAIN TO ,DS(on)URCE ON-RESISTANC 123 TJ = 125 oC N O RAI 0.8 S TJ = 25 oC D 0.7 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs. Gate to vs. Junction Temperature Source Voltage 150 1000 PULSE DURATION = 80 μs A) VGS = 0 V 120 DUTY CYCLE = 0.5% MAX NT ( 100 E T (A) VDS = 5 V URR 10 TJ = 150 oC N C CURRE 90 TJ = 150 oC DRAIN 1 TJ = 25 oC N 60 E RAI TJ = 25 oC ERS 0.1 D V I, D 30 TJ = -55 oC I, RES 0.01 TJ = -55 oC 0 0.001 1.0 1.5 2.0 2.5 3.0 3.5 0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current FDMS8320L Rev.1.2 3 www.fairchildsemi.com

F D Typical Characteristics T = 25 °C unless otherwise noted. M J S 8 3 10 30000 2 0 OLTAGE (V) 8 ID = 32 A VDD = 20 V pF)10000 Ciss L N-Ch E TO SOURCE V 46 VDD = 16 V VDD = 24 V CAPACITANCE (1100000 Coss annel Po AT 2 Crss w G f = 1 MHz V, GS 0 10 VGS = 0 V erT 0 25 50 75 100 125 0.1 1 10 40 re Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) n c h ® Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage M O S 250 F 200 E T 100 A) A) 200 T ( T ( VGS = 10 V N N E E RR TJ = 25 oC RR 150 U U E C TJ = 100 oC N C VGS = 4.5 V CH 10 AI 100 N R A D , AVALAS TJ = 125 oC , ID 50 RθJC = 1.2 oC/W I 0 1 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs. Case Temperature 2000 20000 1000 W)10000 SINGLE PULSE R ( RθJC = 1.2 oC/W T (A) 100 10 us OWE TC = 25 oC N P E T RR THIS AREA IS EN N CU 10 LIMITED BY rDS(on) 100 us ANSI 1000 DRAI SINGLE PULSE 1 ms K TR I, D 0.11 TTRJCθ J ==C M2=5 A1 Xo.C2 R oCA/TWED CMUERAVSEU RBEE NDTA TTAO 1D0C ms , PPEA()PK 15000 0.1 1 10 100 200 10-5 10-4 10-3 10-2 10-1 1 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WI DTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation FDMS8320L Rev.1.2 4 www.fairchildsemi.com

F D Typical Characteristics T = 25 °C unless otherwise noted. M J S 8 2 3 2 1 DUTY CYCLE-DESCENDING ORDER 0 CE L VEAN D = 0.5 N FFECTIRESIST 0.1 000...2105 PDM -Ch D EAL 0.02 an ZERM 0.01 t1 n MALITHE t2 el RT 0.01 NOTES: P r(t), NOANSIEN SINGLE PULSE ZRPθθeJJaCCk( t =)T =1J .=r2( tPo)C DxM/ WR xθ JZCθJC(t) + TC owe TR Duty Cycle, D = t1 / t2 rT 0.001 r 10-5 10-4 10-3 10-2 10-1 1 en t, RECTANGULAR PULSE DURATION (s) c h ® Figure 13. Transient Thermal Response Curve M O S F E T FDMS8320L Rev.1.2 5 www.fairchildsemi.com

PQFN85X6,1.27P CASE483AE ISSUEA 5.10 A 5.10 3.91 PKG SEE CL B DETAILB 1.27 8 5 8 7 6 5 0.77 4.52 3.75 PKGCL 6.15 5.85 6.61 5.65 KEEPOUT AREA 1.27 1 4 1 2 3 4 TOPVIEW 1.27 0.61 3.81 LANDPATTERN OPTIONALDRAFT RECOMMENDATION ANGLEMAYAPPEAR SEE ONFOURSIDES 5.00 4.80 DETAILC OFTHEPACKAGE 0.35 0.15 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 0.10 C 0.30 0.05 0.05 SIDEVIEW 0.00 (cid:19)(cid:131)(cid:16)(cid:20)(cid:21)(cid:131) 8X 0.08 C 0.35 C 5.20 0.15 4.80 1.10 SEATING 0.90 PLANE DETAILC DETAILB 3.81 SCALE:2:1 SCALE:2:1 1.27 0.51 (8X) 0.31 (0.34) NOTES:UNLESSOTHERWISESPECIFIED 0.10 C A B A.PACKAGESTANDARDREFERENCE:JEDECMO-240, 1 2 3 4 ISSUEA,VAR.AA,. B.DIMENSIONSDONOTINCLUDEBURRSORMOLDFLASH. 0.76 MOLDFLASHORBURRSDOESNOTEXCEED0.10MM. 0.51 (0.52) C.ALLDIMENSIONSAREINMILLIMETERS. 6.25 D.DIMENSIONINGANDTOLERANCINGPERASMEY14.5M-2009. 5.90 E.ITISRECOMMENDEDTOHAVENOTRACESOR VIASWITHINTHEKEEPOUTAREA. (0.50) 3.48+0.30 -0.10 (0.30) (2X) 8 7 6 5 +0.10 (cid:19)(cid:17)(cid:23)(cid:23)(cid:147)(cid:19)(cid:17)(cid:20)(cid:19) 0.20 (8X) 3.96 -0.15 3.61 BOTTOMVIEW

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