CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. PPaNck’sa: gCeG THy4p0e0s4: 454F0 &1 9C3G H& 4404004250P6 FEATURES APPLICATIONS • Up to 4 GHz Operation • 2-Way Private Radio • 16 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 12 dB Small Signal Gain at 4.0 GHz • Cellular Infrastructure • 55 W Typical P • Test Instrumentation SAT • 55 % Efficiency at P • Class A, AB, Linear amplifiers suitable for SAT • 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms 5 1 0 2 y a M - 0 .4 v e R Subject to change without notice. 1 www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 15 mA 25˚C GMAX Maximum Drain Current1 I 6 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Screw Torque τ 80 in-oz Thermal Resistance, Junction to Case3 R 2.8 ˚C/W 85˚C θJC Case Operating Temperature3,4 T -40, +150 ˚C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40045F at P = 56W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 8. Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 14.4 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 400 mA GS(Q) DC DS D Saturated Drain Current2 I 11.6 14.0 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 14.4 mA BR DC GS D RF Characteristics3 (T = 25˚C, F = 2.5 GHz unless otherwise noted) C 0 Small Signal Gain G 12.5 14 – dB V = 28 V, I = 400 mA SS DD DQ Power Output4 P 40 55 – W V = 28 V, I = 400 mA SAT DD DQ Drain Efficiency5 η 45 55 – % V = 28 V, I = 400 mA, P = P DD DQ OUT SAT No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 400 mA, DD DQ P = 45 W CW OUT Dynamic Characteristics Input Capacitance C – 19.0 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 5.9 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 0.8 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40045F-AMP 4 P is defined as I = 1.08 mA. SAT G 5 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGH40045 Rev 4.0 www.cree.com/rf

Typical Performance Simulated Small Signal Gain and Input Return Loss of the CGHC4G0H044050F4-A5MSpPa rvasm Ferteeqrusency V = 28 V, I = 400 mA DD DQ Gain, Efficiency, and Output Power vs Frequency measured in Amplifier Circuit CGH40045F-AMP V = 28 V, I = 400 mA DD DQ 80 70 %)%) y(y(60 cc nn ee cici EffiEffi50 nn aiai Psat DrDr B),B),4400 GGaaiinn (d(d DrainEff nn aiai30 GG W),W), (( AT20 S P 10 0 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGH40045 Rev 4.0 www.cree.com/rf

Typical Performance Gain and Efficiency vs Output Power measured in Amplifier Circuit CGH40045F-AMP V = 28 V, I = 400 mA, Freq = 2.5 GHz DD DQ 20 60% 18 50% Gain DrainEfficiency 16 40% %) ( y B) nc d e Gain(14 30% Effici n ai r D 12 20% 10 10% 8 0% 22 24 26 28 30 32 34 36 38 40 42 44 46 48 OutputPower(dBm) Single Tone CW Output Power vs Input Power of measured in Amplifier Circuit CGH40045F-AMP V = 28 V, I = 400 mA DD DQ 50 2.5GHz 45 2.4GHz 2.6GHz m)40 B d er ( w o35 P ut p ut O30 25 20 5 10 15 20 25 30 35 40 Input Power (dBm) Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGH40045 Rev 4.0 www.cree.com/rf

Typical Performance Pulsed Gain and Output Power vs Input Power measured in Amplifier Circuit CGH40045F-AMP V = 28 V, I = 800 mA, Freq = 3.6 GHz, Pulse Width=200µS, 10% Duty Cycle DD DQ 13 60 12 50 ) m Gain B 11 40 d B) r ( d e ( P w ain 10 OUT 30 Po G t u p t 9 20 u O 8 10 7 0 5 10 15 20 25 30 35 40 Input Power (dBm) Single Tone CW Gain, Efficiency, and Output Power vs Input Power measured in Amplifier Circuit CGH40045F-AMP V = 28 V, I = 800 mA, Freq = 3.6 GHz DD DQ 13 60 12 50 Gain ) ) m % 11 40 ( B dB) ncy er (d n ( 10 30 cie ow ai P fi P G OUT Ef t n pu 9 20 rai ut D O Efficiency 8 10 7 0 0 5 10 15 20 25 30 35 40 Input Power Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGH40045 Rev 4.0 www.cree.com/rf

Typical Performance Simulated Maximum Available Gain and K Factor of the CGH40045 V = 28 V, I = 400 mA DD DQ ) B r d o G ( act A F M K Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGH40045 Rev 4.0 www.cree.com/rf

Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40045 V = 28 V, I = 400 mA DD DQ ) B ) s d m ( e h r O u ( g e Fi c e an s t Noi sis m Re u e m s ni oi Mi N Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGH40045 Rev 4.0 www.cree.com/rf

Simulated Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 4.1 + j5.27 14.73 + j6.91 750 2.9 + j 4.1 12.3 + j 7.6 1000 2.48 + j0.06 8.13 + j6.85 1100 1.9 + j 3.1 9.2 + j 6.2 1500 2.1 - j 2.5 6.0 + j 4.3 1700 1.05 - j2.48 5.07 + j.2.29 1800 2.1 - j1.9 5.8 + j 4.1 1900 0.89 - j2.62 4.81 + j2.17 2000 0.69 - j3.75 4.93 + j0.16 2100 1.5 - j 4.4 5.1 + j 2.8 3000 1.06 - j8.92 4.04 - j2.98 4000 1.67 - j18.1 4.97 - j8.25 Note 1. V = 28V, I = 800mA in the 440193 package. DD DQ Note 2. Optimized for power gain, P and PAE. SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40045 Power Dissipation De-rating Curve CGH40045FCWPowerDissipationDe-ratingCurve 60 50 W)W) 40 (( nn oo atiati pp sisi 30 ss DiDi erer Note1 ww PoPo 20 10 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGH40045 Rev 4.0 www.cree.com/rf

CGH40045-AMP Demonstration Amplifier Circuit Schematic CGH40045-AMP Demonstration Amplifier Circuit Outline Note: The device slot is machined to different depths to support either pill or flanged versions Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGH40045 Rev 4.0 www.cree.com/rf

CGH40045-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 0.8pF, ± 0.1 pF, 0603 1 C2 CAP, 2.2pF, ± 0.1 pF, 0603 1 C4,C11,C17 CAP, 10.0pF, +/-5%, 0603, ATC 3 C6,C13, C19 CAP, 470pF ±5 %, 100 V, 0603, X7R 3 C7,C14,C20 CAP,33000PF, 0805,100V, X7R 3 C8 CAP, 10UF, 16V, SMT, TANTALUM 1 C10 CAP, 8.2pF ±5%, ATC100B 1 C15,C21 CAP, 1.0UF ±10%, 100V, 1210, X7R 2 C5,C12,C18,C30,C31 CAP, 82.0pF, ±5%, 0603 5 C16,C22 CAP, 33UF, 20%, G CASE 2 R2 RES, 1/16W, 0603, 100 Ohms 1% 1 R1 RES, 1/16W, 0603, 5.1 Ohms 1% 1 J2,J3 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 J1 CONN, HEADER, RT>PLZ .1CEN LK 9POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 Q1 CGH40045 1 CGH40045-AMP Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGH40045 Rev 4.0 www.cree.com/rf

Typical Package S-Parameters for CGH40045 (Small Signal, V = 28 V, I = 400 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.941 -171.75 7.34 80.91 0.012 -3.58 0.650 -173.39 600 MHz 0.941 -174.07 6.12 77.22 0.012 -6.14 0.655 -173.73 700 MHz 0.941 -175.88 5.24 73.81 0.012 -8.41 0.660 -173.93 800 MHz 0.942 -177.39 4.59 70.58 0.012 -10.49 0.665 -174.05 900 MHz 0.942 -178.70 4.07 67.49 0.012 -12.42 0.671 -174.15 1.0 GHz 0.942 -179.88 3.66 64.51 0.011 -14.23 0.677 -174.24 1.1 GHz 0.943 179.05 3.33 61.61 0.011 -15.93 0.683 -174.35 1.2 GHz 0.943 178.03 3.05 58.78 0.011 -17.54 0.689 -174.49 1.3 GHz 0.944 177.07 2.82 56.03 0.011 -19.06 0.695 -174.66 1.4 GHz 0.944 176.13 2.62 53.33 0.011 -20.50 0.701 -174.86 1.5 GHz 0.945 175.21 2.45 50.69 0.011 -21.86 0.707 -175.10 1.6 GHz 0.945 174.30 2.30 48.10 0.011 -23.14 0.713 -175.37 1.7 GHz 0.945 173.40 2.17 45.56 0.011 -24.34 0.718 -175.68 1.8 GHz 0.946 172.49 2.06 43.05 0.010 -25.47 0.724 -176.02 1.9 GHz 0.946 171.58 1.96 40.59 0.010 -26.53 0.729 -176.40 2.0 GHz 0.946 170.65 1.87 38.16 0.010 -27.51 0.734 -176.81 2.1 GHz 0.946 169.70 1.80 35.76 0.010 -28.43 0.739 -177.25 2.2 GHz 0.946 168.73 1.73 33.39 0.010 -29.28 0.743 -177.72 2.3 GHz 0.946 167.73 1.67 31.03 0.010 -30.06 0.747 -178.21 2.4 GHz 0.945 166.70 1.62 28.70 0.010 -30.78 0.751 -178.74 2.5 GHz 0.945 165.63 1.57 26.37 0.010 -31.44 0.754 -179.28 2.6 GHz 0.945 164.53 1.54 24.06 0.010 -32.05 0.757 -179.85 2.7 GHz 0.944 163.38 1.50 21.74 0.009 -32.60 0.759 179.55 2.8 GHz 0.943 162.17 1.47 19.42 0.009 -33.10 0.761 178.93 2.9 GHz 0.942 160.91 1.45 17.09 0.009 -33.56 0.763 178.28 3.0 GHz 0.941 159.57 1.43 14.74 0.009 -33.99 0.764 177.61 3.2 GHz 0.938 156.68 1.41 9.95 0.009 -34.75 0.766 176.20 3.4 GHz 0.935 153.41 1.41 5.00 0.009 -35.46 0.765 174.68 3.6 GHz 0.930 149.66 1.42 -0.20 0.010 -36.21 0.763 173.05 3.8 GHz 0.923 145.28 1.46 -5.76 0.010 -37.13 0.758 171.27 4.0 GHz 0.914 140.09 1.52 -11.80 0.011 -38.39 0.751 169.35 4.2 GHz 0.903 133.82 1.60 -18.50 0.011 -40.21 0.742 167.23 4.4 GHz 0.888 126.08 1.71 -26.07 0.012 -42.86 0.729 164.90 4.6 GHz 0.868 116.32 1.86 -34.83 0.013 -46.72 0.712 162.27 4.8 GHz 0.842 103.74 2.05 -45.14 0.015 -52.24 0.690 159.29 5.0 GHz 0.811 87.25 2.27 -57.50 0.017 -59.93 0.663 155.80 5.2 GHz 0.777 65.61 2.51 -72.38 0.019 -70.34 0.628 151.60 5.4 GHz 0.752 38.13 2.72 -90.03 0.021 -83.73 0.581 146.39 5.6 GHz 0.753 6.31 2.83 -110.07 0.023 -99.76 0.516 139.81 5.8 GHz 0.785 -25.54 2.78 -131.39 0.023 -117.31 0.427 131.59 6.0 GHz 0.835 -53.19 2.58 -152.64 0.022 -135.03 0.311 121.26 To download the s-parameters in s2p format, go to the CGH40045 Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGH40045 Rev 4.0 www.cree.com/rf

Typical Package S-Parameters for CGH40045 (Small Signal, V = 28 V, I = 800 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.952 -172.90 7.23 81.83 0.009 -1.13 0.688 -176.19 600 MHz 0.952 -175.11 6.03 78.47 0.009 -3.05 0.691 -176.58 700 MHz 0.952 -176.85 5.18 75.35 0.009 -4.72 0.694 -176.86 800 MHz 0.952 -178.32 4.54 72.38 0.009 -6.21 0.696 -177.07 900 MHz 0.952 -179.59 4.05 69.53 0.009 -7.58 0.699 -177.25 1.0 GHz 0.952 179.25 3.65 66.76 0.009 -8.84 0.702 -177.42 1.1 GHz 0.952 178.19 3.33 64.06 0.009 -10.01 0.706 -177.59 1.2 GHz 0.952 177.18 3.06 61.42 0.009 -11.09 0.709 -177.77 1.3 GHz 0.952 176.22 2.83 58.82 0.009 -12.11 0.712 -177.96 1.4 GHz 0.952 175.28 2.64 56.27 0.009 -13.05 0.716 -178.17 1.5 GHz 0.952 174.37 2.48 53.75 0.009 -13.92 0.719 -178.41 1.6 GHz 0.952 173.46 2.34 51.27 0.009 -14.72 0.722 -178.67 1.7 GHz 0.952 172.55 2.21 48.82 0.009 -15.46 0.725 -178.95 1.8 GHz 0.952 171.64 2.11 46.39 0.009 -16.14 0.728 -179.26 1.9 GHz 0.952 170.72 2.01 43.99 0.009 -16.75 0.731 -179.59 2.0 GHz 0.951 169.78 1.93 41.60 0.009 -17.29 0.734 -179.94 2.1 GHz 0.951 168.83 1.86 39.23 0.009 -17.78 0.737 179.67 2.2 GHz 0.951 167.85 1.80 36.88 0.008 -18.21 0.739 179.27 2.3 GHz 0.950 166.84 1.74 34.53 0.008 -18.58 0.741 178.83 2.4 GHz 0.949 165.80 1.69 32.19 0.008 -18.90 0.743 178.38 2.5 GHz 0.949 164.73 1.65 29.85 0.008 -19.17 0.744 177.90 2.6 GHz 0.948 163.61 1.61 27.51 0.008 -19.40 0.746 177.39 2.7 GHz 0.947 162.44 1.58 25.15 0.008 -19.59 0.747 176.86 2.8 GHz 0.946 161.22 1.56 22.79 0.008 -19.74 0.747 176.31 2.9 GHz 0.945 159.94 1.54 20.40 0.009 -19.87 0.748 175.73 3.0 GHz 0.943 158.58 1.53 17.98 0.009 -19.99 0.747 175.12 3.2 GHz 0.940 155.64 1.51 13.04 0.009 -20.21 0.746 173.83 3.4 GHz 0.935 152.30 1.51 7.90 0.009 -20.51 0.743 172.44 3.6 GHz 0.930 148.47 1.54 2.47 0.010 -21.01 0.738 170.92 3.8 GHz 0.922 143.99 1.58 -3.34 0.010 -21.86 0.730 169.27 4.0 GHz 0.913 138.66 1.65 -9.68 0.011 -23.25 0.721 167.47 4.2 GHz 0.900 132.21 1.75 -16.72 0.012 -25.41 0.708 165.49 4.4 GHz 0.884 124.23 1.87 -24.68 0.013 -28.63 0.691 163.32 4.6 GHz 0.863 114.16 2.04 -33.86 0.015 -33.25 0.671 160.90 4.8 GHz 0.835 101.18 2.24 -44.66 0.017 -39.70 0.646 158.17 5.0 GHz 0.802 84.20 2.47 -57.54 0.020 -48.45 0.616 155.00 5.2 GHz 0.768 62.03 2.72 -72.91 0.022 -59.96 0.577 151.18 5.4 GHz 0.745 34.19 2.91 -90.96 0.025 -74.38 0.527 146.39 5.6 GHz 0.750 2.50 2.99 -111.20 0.026 -91.25 0.459 140.32 5.8 GHz 0.785 -28.66 2.91 -132.50 0.027 -109.41 0.366 132.93 6.0 GHz 0.837 -55.46 2.67 -153.57 0.025 -127.56 0.245 124.60 To download the s-parameters in s2p format, go to the CGH40045 Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 12 CGH40045 Rev 4.0 www.cree.com/rf

Product Dimensions CGH40045F (Package Type — 440193) Product Dimensions CGH40045P (Package Type — 440206) Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 13 CGH40045 Rev 4.0 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure Image CGH40045F GaN HEMT Each CGH40045P GaN HEMT Each CGH40045F-TB Test board without GaN HEMT Each CGH40045P-TB Test board without GaN HEMT Each CGH40045F-AMP Test board with GaN HEMT installed Each CGH40045P-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 14 CGH40045 Rev 4.0 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 15 CGH40045 Rev 4.0 www.cree.com/rf

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C ree, Inc.: CGH40045F-TB CGH40045F