Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY (cid:1) TrenchFET(cid:2) Power MOSFET VDS (V) rDS(on) ((cid:1)) ID (A) Qg (Typ) 0.150 @ VGS = −4.5 V −1.5 −20 0.175 @ VGS = −3.6 V −1.4 2.9 0.265 @ VGS = −2.5 V −1.2 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code D 2 5 D OD XXY Y Lot Traceability and Date Code G 3 4 S Part # Code Top View Ordering Information: Si1403BDL-T1—E3 ABSOLUTE MAXIMUM RATINGS (T = 25(cid:3)C UNLESS OTHERWISE NOTED) A Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS −20 VV Gate-Source Voltage VGS (cid:1)12 TA = 25(cid:3)C −1.5 −1.4 CCoonnttiinnuuoouuss DDrraaiinn CCuurrrreenntt ((TTJJ == 115500(cid:3)(cid:3)CC))aa IIDD TA = 85(cid:3)C −1.2 −1.0 AA Pulsed Drain Current IDM −5 Continuous Diode Current (Diode Conduction)a IS −0.8 −0.8 TA = 25(cid:3)C 0.625 0.568 MMaaxxiimmuumm PPoowweerr DDiissssiippaattiioonnaa TA = 85(cid:3)C PPDD 0.400 0.295 WW Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 (cid:3)C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t (cid:2) 5 sec 165 200 MMaxiimum JJuncttiion-tto-AAmbbiienttaa Steady State RRthJA 180 220 (cid:3)CC//WW Maximum Junction-to-Foot (Drain) Steady State RthJF 105 130 Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73253 www.vishay.com S-50137—Rev. A, 24-Jan-05 1

Si1403BDL Vishay Siliconix New Product SPECIFICATIONS (T = 25(cid:3)C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 (cid:2)A −0.6 −1.3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = (cid:1)12 V (cid:1)100 nA ZZeerroo GGaattee VVoollttaaggee DDrraaiinn CCuurrrreenntt IIDDSSSS VDS =V −D2S0 = V −, V20G SV ,= V 0G SV ,= T 0J =V 85(cid:3)C −−15 (cid:2)(cid:2)AA On-State Drain Currenta ID(on) VDS = −5 V, VGS = −4.5 V −2 A VGS = −4.5 V, ID = −1.5 A 0.120 0.150 DDrraaiinn-SSoouurrccee OOnn-SSttaattee RReessiissttaanncceea rrDDSS((oonn)) VGS = −3.6 V, ID = −1.4 A 0.140 0.175 (cid:1)(cid:1) VGS = −2.5 V, ID = −0.8 A 0.220 0.265 Forward Transconductancea gfs VDS = −10 V, ID = −1.5 A 3.4 S Diode Forward Voltagea VSD IS = −0.8 A, VGS = 0 V −0.8 −1.1 V Dynamicb Total Gate Charge Qg 2.9 4.5 Gate-Source Charge Qgs VDDSS = −10 V,, VGGSS = −4.5 V,, IDD = −1.5 A 0.65 nC Gate-Drain Charge Qgd 1.0 Gate Resistance Rg f = 1.0 MHz 9 (cid:1) Turn-On Delay Time td(on) 13 20 Rise Time tr VVDDDD == −−1100 VV,, RRLL == 1100 (cid:1)(cid:1) 30 45 Turn-Off Delay Time td(off) ID (cid:3) −1 A, VGEN = −4.5 V, Rgg = 6 (cid:1) 28 42 nnss Fall Time tf 13 20 SBooduyrc De-ioDdraei nR eRveevresres eR eRceocvoevreyr yC hTaimrgee Qtrrrr IIFF == −00.88 AA, ddii//ddtt == 110000 AA//(cid:2)(cid:2)ss 142 285 nC Notes a. Pulse test; pulse width (cid:2) 300 (cid:2)s, duty cycle (cid:2) 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25(cid:3)C UNLESS NOTED) Output Characteristics Transfer Characteristics 4.0 4.0 TC = −55(cid:3)C VGS = 5 thru 2.5 V 25(cid:3)C 3.2 3.2 A) A) 125(cid:3)C nt ( 2.4 nt ( 2.4 urre 2 V urre C C n n ai 1.6 ai 1.6 Dr Dr − − D D I 0.8 I 0.8 1.5 V 1, 0.5 V 0.0 0.0 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) www.vishay.com Document Number: 73253 2 S-50137—Rev. A, 24-Jan-05

Si1403BDL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25(cid:3)C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 0.40 500 ) (cid:1) 0.32 400 ance ( VGS = 2.5 V e (pF) sist 0.24 anc 300 Ciss Re cit n- pa O a − 0.16 VGS = 3.6 V − C 200 n) C o S( rD 0.08 VGS = 4.5 V 100 Coss Crss 0.00 0 0 1 2 3 4 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 ge (V) 4 VIDD =S 1=. 51 0A V 1.4 VIDG =S 1=. 54 .A5 V a e Volt ance − Gate-to-Sourc 23 − On-ResiistS(on)(Normalized) 11..02 GS rD V 1 0.8 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature ((cid:3)C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.40 TJ = 150(cid:3)C 0.35 ) (cid:1) nt (A) nce ( 0.30 e Curre 1 Resista 00..2205 ID = 0.8 A ID = 1.5 A − SourcS TJ = 25(cid:3)C − On-on) 0.15 I S( 0.10 D r 0.05 0.1 0.00 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 73253 www.vishay.com S-50137—Rev. A, 24-Jan-05 3

Si1403BDL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25(cid:3)C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.5 10 0.4 8 0.3 ID = 250 (cid:2)A V) nce ( 0.2 W) 6 Varia 0.1 wer ( S(th) −0.0 Po 4 G V −0.1 2 −0.2 −0.3 0 −50 −25 0 25 50 75 100 125 150 10−2 10−1 1 10 100 TJ − Temperature ((cid:3)C) Time (sec) Safe Operating Area 10 10 (cid:2)s *Limited by rDS(on) 100 (cid:2)s 1 ms 1 A) nt ( 10 ms e Curr 0.1 n 100 ms ai Dr 1 s, 100 s, dc − D I 0.01 TA = 25(cid:3)C Single Pulse 0.001 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS (cid:4) minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e ctive Transimpedance 0.2 Notes: ed Effeermal I 0.1 0.1 PDM malizTh 0.05 t1 Nor 0.02 1. Duty Cyclet,2 D = t1 2. Per Unit Base = RthtJ2A = 180(cid:3)C/W Single Pulse 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 73253 4 S-50137—Rev. A, 24-Jan-05

Si1403BDL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25(cid:3)C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 nt Duty Cycle = 0.5 e ctive Transimpedance 0.2 zed Effehermal I 0.1 00..105 aliT m or 0.02 N Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73253. Document Number: 73253 www.vishay.com S-50137—Rev. A, 24-Jan-05 5

Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1

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