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  • 型号: SI3475DV-T1-GE3
  • 制造商: Vishay
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SI3475DV-T1-GE3产品简介:

ICGOO电子元器件商城为您提供SI3475DV-T1-GE3由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SI3475DV-T1-GE3价格参考。VishaySI3475DV-T1-GE3封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 P 沟道 200V 950mA(Tc) 2W(Ta),3.2W(Tc) 6-TSOP。您可以下载SI3475DV-T1-GE3参考资料、Datasheet数据手册功能说明书,资料中有SI3475DV-T1-GE3 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET P-CH 200V 950MA 6-TSOPMOSFET 200V 0.95A 3.2W 1.61ohm @ 10V

产品分类

FET - 单分离式半导体

FET功能

逻辑电平门

FET类型

MOSFET P 通道,金属氧化物

Id-ContinuousDrainCurrent

750 mA

Id-连续漏极电流

750 mA

品牌

Vishay SiliconixVishay / Siliconix

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Vishay / Siliconix SI3475DV-T1-GE3TrenchFET®

数据手册

http://www.vishay.com/doc?74249

产品型号

SI3475DV-T1-GE3SI3475DV-T1-GE3

Pd-PowerDissipation

2 W

Pd-功率耗散

2 W

RdsOn-Drain-SourceResistance

1.61 Ohms

RdsOn-漏源导通电阻

1.61 Ohms

Vds-Drain-SourceBreakdownVoltage

200 V

Vds-漏源极击穿电压

- 200 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

上升时间

11 ns, 29 ns

下降时间

12 ns, 14 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

500pF @ 50V

不同Vgs时的栅极电荷(Qg)

18nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

1.61 欧姆 @ 900mA,10V

产品种类

MOSFET

供应商器件封装

6-TSOP

其它名称

SI3475DV-T1-GE3DKR

典型关闭延迟时间

28 ns, 23 ns

功率-最大值

3.2W

包装

Digi-Reel®

商标

Vishay / Siliconix

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

6-TSOP(0.065",1.65mm 宽)

封装/箱体

TSOP-6

工厂包装数量

3000

晶体管极性

P-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1

漏源极电压(Vdss)

200V

电流-连续漏极(Id)(25°C时)

950mA (Tc)

通道模式

Enhancement

配置

Single

零件号别名

SI3475DV-GE3

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PDF Datasheet 数据手册内容提取

Si3475DV Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Definition 1.61 at V = - 10 V - 0.95 (cid:129) TrenchFET® Power MOSFET GS - 200 8 nC 1.65 at VGS = - 6 V - 0.93 (cid:129) 100 % Rg and UIS Tested (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Active Clamp Circuits in DC/DC Power Supplies TSOP-6 Top View D 1 6 D S 3 mm D 2 5 D Marking Code G AI XXX G 3 4 S Lot Traceability and Date Code Part # Code 2.85 mm D Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free) Si3475DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS ± 20 T = 25 °C - 0.95a C T = 70 °C - 0.77 Continuous Drain Current (T = 150 °C) C I J TA = 25 °C D - 0.75b,c TA = 70 °C - 0.59b,c A Pulsed Drain Current IDM - 3 T = 25 °C - 2.6 Continuous Source-Drain Diode Current TCA = 25 °C IS 1.6b,c Avalanche Current IAS 3 L = 0.1 mH Single-Pulse Avalanche Energy EAS 0.45 mJ T = 25 °C 3.2 C T = 70 °C 2.1 Maximum Power Dissipation TCA = 25 °C PD 2b,c W TA = 70 °C 1.25b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 51 62.5 °C/W Maximum Junction-to-Foot Steady State RthJF 32 39 Notes: a. T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 74249 www.vishay.com S09-0766-Rev. B, 04-May-09 1

Si3475DV Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 200 V VVGDSS (tThe) mTepmerpaeturaretu Creo Cefofiecfifeicnitent ΔVΔVGSD(Sth/T)/JTJ ID = - 250 µA - 62.420 mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2 - 4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS =V -D 2S0 =0 -V 2, 0V0G SV ,= V 0G VS, =T 0J =V 5 5 °C -- 1 10 µA On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 2 A Drain-Source On-State Resistancea RDS(on) VVGGSS = = -- 160 V V, ,I DID = = -- 00..79 AA 11..3347 11..6615 Ω Forward Transconductancea gfs VDS = - 10 V, ID = - 0.9 A 3.5 S Dynamicb Input Capacitance Ciss 500 Output Capacitance Coss VDS = - 50 V, VGS = 0 V, f = 1 MHz 26 pF Reverse Transfer Capacitance Crss 18 Total Gate Charge Qg VDS = - 100 V, VGS = - 10 V, ID = - 1 A 11.7 18 7.8 12 nC Gate-Source Charge Qgs VDS = - 100 V, VGS = - 6 V, ID = - 1 A 2 Gate-Drain Charge Qgd 3.7 Gate Resistance Rg f = 1 MHz 9 14 Ω Turn-On Delay Time td(on) 9 14 Rise Time tr VDD = - 100 V, RL = 100 Ω 11 18 Turn-Off DelayTime td(off) ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 28 42 Fall Time tf 12 18 ns Turn-On Delay Time td(on) 14 21 Rise Time tr VDD = - 100 V, RL = 100 Ω 29 44 Turn-Off DelayTime td(off) ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω 23 35 Fall Time tf 14 21 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 0.95 A Pulse Diode Forward Current ISM - 3 Body Diode Voltage VSD IS = - 1 A, VGS = 0 V - 0.81 - 1.2 V Body Diode Reverse Recovery Time trr 84 130 ns Body Diode Reverse Recovery Charge Qrr I = - 1.2 A, dI/dt = 100 A/µs, T = 25 °C 235 350 nC Reverse Recovery Fall Time ta F J 46 ns Reverse Recovery Rise Time tb 38 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74249 2 S09-0766-Rev. B, 04-May-09

Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 1.5 VG S = 10 V thru 5 V 4 1.2 )A( tnerruC niarD - 23 -)A( tnerruC niarD D 00..69 TC = 125 °C D I I TC = 25 °C 1 0.3 4 V TC = - 55 °C 0 0.0 0 2 4 6 8 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.00 750 Ω) 1.80 600 ( e c n a t s i s e R - n O -) n o ( S D 11..4600 VGS = 6 VVGS = 10 V )Fp( ecnatiaC - cpa C 340500 Ciss R 1.20 150 Coss Crss 1.00 0 0 1 2 3 4 5 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.4 )V( e 8 ID = 1 A VDS = 100 V 2.0 ID = 1 A atlV ecgo 6 VDS = 75 V ecnatsis )de 1.6 VGS = 10 VVGS = 6 V ruoS VD S = 125 V R-ne zilam -ot-eta 4 O - )noroN( 1.2 G (S -S RD VG 2 0.8 0 0.4 0.0 2.5 5.0 7.5 10.0 12.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ- Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74249 www.vishay.com S09-0766-Rev. B, 04-May-09 3

Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 6.0 Ω) 4.8 )A( tn 1 (ecru erruC ecruoS TJ = 150 °C TJ = 25 °C oS-ot-niarD - 23..46 TA= 125 °C -IS 0.1 )no(SD TA= 25 °C R 1.2 0.01 0.0 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 60 0.6 48 ID = 5 µA 0.4 V ( V ) S ) h t ( G 0.2 ID = 5 mA )W( rewoP 3264 0.0 12 - 0.2 - 0.4 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 Limited by RDS(on)* 1 A) (tn 1 ms e ruCr 0.1 10 ms n ia rD 100 ms - ID 1 s 0.01 T = 25 °C 10 s A Single Pulse DC 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS minimum VG S at which RDS(on)isspecified Safe Operating Area www.vishay.com Document Number: 74249 4 S09-0766-Rev. B, 04-May-09

Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1.1 0.9 W) 0.7 er ( w o P 0.4 0.2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.5 3.2 1.2 )W 2.4 W) 0.9 (rw e er (w Po 1.6 Po 0.6 0.8 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74249 www.vishay.com S09-0766-Rev. B, 04-May-09 5

Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 0.1 0000..0.0.2152 1NP.o D DteMust :y Cyt 1c let, 2 D = tt 12 2. Per Unit Base = R thJA = 75 °C/W 3. TJ M - TA = P DMZ t hJA (t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 t n e i s n a r T e v i t c e f f E d e z i l a m e c n a d e p m I l a m r e h T 0.1 0000...0.01225 r o N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74249. www.vishay.com Document Number: 74249 6 S09-0766-Rev. B, 04-May-09

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose o r the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk . Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this documen t or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000