Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R () I (mA) DS DS(on) D Definition 0.70 at VGS = 4.5 V 600 (cid:129) TrenchFET® Power MOSFETs N-Channel 20 0.85 at VGS = 2.5 V 500 (cid:129) 2000 V ESD Protection (cid:129) Very Small Footprint 1.25 at V = 1.8 V 350 GS (cid:129) High-Side Switching 1.2 at V = - 4.5 V - 400 GS (cid:129) Low On-Resistance: P-Channel - 20 1.6 at VGS = - 2.5 V - 300 N-Channel, 0.7  P-Channel, 1.2  2.7 at V = - 1.8 V - 150 GS (cid:129) Low Threshold: ± 0.8 V (Typ.) (cid:129) Fast Switching Speed: 14 ns (cid:129) 1.8 V Operation (cid:129) Compliant to RoHS Directive 2002/95/EC BENEFITS SOT- 563 (cid:129) Ease in Driving Switches SC-89 (cid:129) Low Offset (Error) Voltage (cid:129) Low-Voltage Operation S1 1 6 D1 (cid:129) High-Speed Circuits (cid:129) Low Battery Voltage Operation G1 2 5 G2 Marking Code: A APPLICATIONS D2 3 4 S2 (cid:129) Replace Digital Transistor, Level-Shifter (cid:129) Battery Operated Systems To p V iew (cid:129) Power Supply Converter Circuits Ordering Information:Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 6 T = 25 °C 515 485 - 390 - 370 Continuous Drain Current (TJ = 150 °C)a TA = 85 °C ID 370 350 - 280 - 265 A mA Pulsed Drain Currentb IDM 650 - 650 Continuous Source Current (Diode Conduction)a IS 450 380 - 450 - 380 T = 25 °C 280 250 280 250 Maximum Power Dissipationa A PD mW T = 85 °C 145 130 145 130 A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71168 www.vishay.com S10-2432-Rev. E, 25-Oct-10 1

Si1016X Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS = VGS, ID = 250 µA N-Ch 0.45 1 Gate Threshold Voltage VGS(th) V VDS = VGS, ID = - 250 µA P-Ch - 0.45 - 1 N-Ch ± 0.5 ± 1.0 Gate Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V µA P-Ch ± 1.0 ± 2.0 VDS = 16 V, VGS = 0 V N-Ch 0.3 100 nA Zero Gate Voltage Drain VDS = - 16 V, VGS = 0 V P-Ch - 0.3 - 100 I Current DSS VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 µA VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch - 5 On State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V N-Ch 700 mA VDS = - 5 V, VGS = - 4.5 V P-Ch - 700 VGS = 4.5 V, ID = 600 mA N-Ch 0.41 0.70 VGS = - 4.5 V, ID = - 350 mA P-Ch 0.80 1.2 Drain-Source On-State VGS = 2.5 V, ID = 500 mA N-Ch 0.53 0.85 Resistancea RDS(on) VGS = - 2.5 V, ID = - 300 mA P-Ch 1.20 1.6  VGS = 1.8 V, ID = 350 mA N-Ch 0.70 1.25 VGS = - 1.8 V, ID = - 150 mA P-Ch 1.80 2.7 Forward Transconductancea gfs VDS = 10 V, ID = 400 mA N-Ch 1.0 S VDS= - 10 V, ID = - 250 mA P-Ch 0.4 Diode Forward Voltagea VSD IS = 150 mA, VGS = 0 V N-Ch 0.8 1.2 V IS = - 150 mA, VGS = 0 V P-Ch - 0.8 - 1.2 Dynamicb N-Ch 750 Total Gate Charge Qg N-Channel P-Ch 1500 Gate-Source Charge Qgs VDS = 10 V, VPG-SC =h a4n.5n eVl, ID = 250 mA NP--CChh 17550 pC VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA N-Ch 225 Gate-Drain Charge Qgd P-Ch 450 N-Channel N-Ch 5 Turn-On Time tON VDD = 10 V, RL = 47  P-Ch 5 I  200 mA, V = 4.5 V, R = 10  D GEN g ns P-Channel N-Ch 25 Turn-Off Time tOFF VDD = - 10 V, RL = 47  P-Ch 35 I  - 200 mA, V = - 4.5 V, R = 10  D GEN g Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71168 2 S10-2432-Rev. E, 25-Oct-10

Si1016X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 1.0 1200 0.8 VGS = 5 V thru 1.8 V 1000 TC = - 55 °C 25 °C urrent (A) 0.6 ent (mA) 800 125 °C Drain C 0.4 ain Curr 600 - ID - Dr D 400 I 0.2 200 1 V 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 100 VG S = 0 V Ci s s f = 1 MHz 3.2 80 Ω) nce ( pF) sista 2.4 nce ( 60 e a n-R acit O p - 1.6 Ca 40 S(on) VGS = 1.8 V C - RD 0.8 VGS = 2.5 V 20 Co s s Cr ss VGS = 4.5 V 0.0 0 0 200 400 600 800 1000 0 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.60 VD S = 10 V e (V) 4 ID = 250 mA 1.40 VGS = 4.5 V ce Voltag 3 sistance ed) 1.20 ID = 350 mA ate-to-Sour 2 - On-Reon)(Normaliz 1.00 VIDG =S 1=5 10. 8m VA G S( - D S R G 1 0.80 V 0 0.60 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 5 0 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71168 www.vishay.com S10-2432-Rev. E, 25-Oct-10 3

Si1016X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 5 1000 TJ = 125 °C 4 Ω) mA) e ( ID = 350 mA urrent ( 100 TJ = 25 °C esistanc 3 e C n-R ID = 200 mA Sourc 10 TJ = 50 °C - On) 2 - S DS(o I R 1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VG S - Gate-to-Source V oltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 3.0 0.2 2.5 ID = 0.25 mA ce (V) 0.1 A) 2.0 Varian 0.0 μ - (S 1.5 S GS(th) - 0.1 IG 1.0 V VGS = 4.5 V - 0.2 0.5 0.0 - 0.3 - 50 - 25 0 25 50 75 100 125 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature I vs. Temperature GSS 7 V) e ( ag 6 olt V wn 5 o d k a e 4 Br e c ur 3 o S o- e-t 2 at G - S 1 S G V B 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BV vs. Temperature GSS www.vishay.com Document Number: 71168 4 S10-2432-Rev. E, 25-Oct-10

Si1016X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 1.0 1000 VGS = 5 V thru 3 V 2.5 V TJ = - 55 °C 0.8 800 25 °C - Drain Current (A)D 00..46 12.8 V V - Drain Current (mA)D 460000 125 °C I I 0.2 200 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 120 VG S = 0 V f = 1 MHz VG S = 1.8 V 100 3.2 Ω) nce ( pF) 80 Ci s s sista 2.4 nce ( e a n-R VG S = 2.5 V acit 60 O p - 1.6 Ca S(on) VG S = 4.5 V C - 40 RD Co s s 0.8 20 Crss 0.0 0 0 200 400 600 800 1000 0 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 VD S = 10 V ID = 250 mA e (V) 4 ) 1.4 Voltag nce ( IVDG =S 3=5 40. 5m VA Gate-to-Source 23 - On-Resistaon)(Normalized) 11..02 VIDG =S 1=5 10. 8m VA - S( GS 1 RD 0.8 V 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ -Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71168 www.vishay.com S10-2432-Rev. E, 25-Oct-10 5

Si1016X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 5 1000 TJ = 125 °C 4 Ω) mA) ce ( Current ( 100 TJ = 25 °C Resistan 3 ID = 350 mA I - Source S 10 TJ = - 55 °C - On-RDS(on) 12 ID = 200 mA 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VG S - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 3.0 0.2 2.5 ID = 0.25 mA e (V) 0.1 2.0 nc A) Varia 0.0 - (µS 1.5 VGS = 4.5 V h) GS S(t I G - 0.1 1.0 V - 0.2 0.5 - 0.3 0.0 - 50 - 25 0 25 50 75 100 125 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature I vs. Temperature GSS 7 V) e ( ag 6 olt V wn 5 o d k a e 4 Br e c ur 3 o S o- e-t 2 at G - S 1 S G V B 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BV vs. Temperature GSS www.vishay.com Document Number: 71168 6 S10-2432-Rev. E, 25-Oct-10

Si1016X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 2 1 nt Duty Cycle = 0.5 e e T ransiedance 0.2 ctivmp Notes: ed Ef feermal I 0.1 0.1 P DM malizTh 0.05 t1 Nor 0.02 1. Duty Cycle,t 2 D = t1 t2 2. Per Unit Base = R th JA = 500 °C/W Single Pulse 3. TJ M - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71168. Document Number: 71168 www.vishay.com S10-2432-Rev. E, 25-Oct-10 7

Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) 2 3 D aaa C E1/2 A4 e1 2x 4 D B 6 5 4 SECTION B-B E/2 C 6 2 3 E1 E 2x DETAIL “A” aaa C 1 2 3 2x 5 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate MILLIMETERS DIM. burrs. Mold flush, protrusions or gate burrs shall not exceed MIN. NOM. MAX. 0.15 mm per dimension E1 does not include interlead flash A 0.56 0.58 0.60 or protrusion, interlead flash or protrusion shall not exceed A1 0 0.02 0.10 0.15 mm per side. b 0.15 0.22 0.30 3. Dimensions D and E1 are determined at the outmost extremes c 0.10 0.14 0.18 of the plastic body exclusive of mold flash, the bar burrs, gate D 1.50 1.60 1.70 burrs and interlead flash, but including any mismatch between E 1.50 1.60 1.70 the top and the bottom of the plastic body. E1 1.15 1.20 1.25 4. Datums A, B and D to be determined 0.10 mm from the lead tip. e 0.45 0.50 0.55 e1 0.95 1.00 1.05 5. Terminal numbers are shown for reference only. L 0.25 0.35 0.50 6. These dimensions apply to the flat section of the lead between L1 0.10 0.20 0.30 0.08 mm and 0.15 mm from the lead tip. C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Revision: 11-Aug-14 1 Document Number: 71612 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) 9 8) 1 7 0 4 0. 0. ( 9 3) 1 8) 6 5 3 9 0 7 0 7 0. 1. 0. 0. ( ( 0.012 0.020 (0.300) (0.500) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72605 www.vishay.com Revision: 21-Jan-08 21

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SI1016X-T1 SI1016X-T1-E3 SI1016X-T1-GE3