PD - 95196A IRF7328PbF HEXFET® Power MOSFET (cid:0)(cid:1)(cid:1)Trench Technology V R max I (cid:0)(cid:1)(cid:1)Ultra Low On-Resistance DSS DS(on) D -30V 21mΩ@V = -10V -8.0A (cid:0)(cid:1) Dual P-Channel MOSFET GS (cid:0)(cid:1)Available in Tape & Reel 32mΩ@VGS = -4.5V -6.8A (cid:0)(cid:1)Lead-Free Description New trench HEXFET® Power MOSFETs from S1 1 8 D1 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance G1 2 7 D1 per silicon area. This benefit, combined with the S2 3 6 D2 ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer G2 4 5 D2 with an extremely efficient and reliable device for use SO-8 in battery and load management applications. Top View Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage -30 V DS ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -6.4 A IDM Pulsed Drain Current(cid:2) -32 PD @TA = 25°C Maximum Power Dissipation(cid:1) 2.0 W PD @TA = 70°C Maximum Power Dissipation(cid:1) 1.3 W Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 20 V T , T Junction and Storage Temperature Range -55 to + 150 °C J STG Thermal Resistance Parameter Max. Units RθJA Maximum Junction-to-Ambient (cid:1) 62.5 °C/W www.irf.com 1 12/03/10

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:3) Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.018 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance –(cid:2)–(cid:2)–(cid:2) 2167.8 3221 mΩ VVGGSS == --41.05VV,, IIDD == --86..08AA(cid:1) (cid:3)(cid:3) VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA gfs Forward Transconductance 12 ––– ––– S VDS = -10V, ID = -8.0A I Drain-to-Source Leakage Current ––– ––– -15 (cid:5)(cid:4) VDS = -24V, VGS = 0V DSS ––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C I Gate-to-Source Forward Leakage ––– ––– -100 (cid:6)(cid:4) VGS = -20V GSS Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 52 78 ID = -8.0A Qgs Gate-to-Source Charge ––– 9.8 ––– nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge ––– 8.3 ––– VGS = -10V td(on) Turn-On Delay Time ––– 13 20 VDD = -15V, VGS = -10.0V tr Rise Time ––– 15 23 (cid:6)(cid:7) ID = -1.0A td(off) Turn-Off Delay Time ––– 198 297 RG = 6.0Ω tf Fall Time ––– 98 147 RD = 15Ω(cid:1)(cid:3) Ciss Input Capacitance ––– 2675 ––– VGS = 0V Coss Output Capacitance ––– 409 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 262 ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (cid:2)(cid:2)(cid:2) (cid:2)(cid:2)(cid:2) (cid:3)2.0 MOSFET symbol D (Body Diode) showing the (cid:4) ISM Pulsed Source Current (cid:2)(cid:2)(cid:2) (cid:2)(cid:2)(cid:2) -32 integral reverse G (Body Diode) (cid:1) p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V(cid:1)(cid:3) trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = -2.0A Qrr Reverse Recovery Charge ––– 36 54 nC di/dt = -100A/µs(cid:1)(cid:3) (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:2)(cid:1)Repetitive rating; pulse width limited by (cid:1)(cid:1)Surface mounted on FR-4 board, (cid:12)(cid:1)≤ 10sec(cid:11) max. junction temperature. (cid:3)Pulse width(cid:1)≤ 400µs(cid:8)(cid:1)duty cycle ≤(cid:1)(cid:9)(cid:10)(cid:11) 2 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:3) 100 100 V GS V GS TOP -10.0V TOP -10.0V CAuenrr()t 10 ------544333......050530VVVVVV CAuenrr()t 10 ------544333......050530VVVVVV Souecr BOTTOM -2.7V Souecr -2.7V BOTTOM -2.7V Danor-- t,iD 1 -2.7V Danor-- t,iD 1 -I -I 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.1 0.1 1 10 100 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 ce 2.0 ID=-8.0A n A) a nt ( sist e e r R 1.5 Cur 10 TJ = 150 ° C On e e d) Sourc Sourcmalize 1.0 n-to- TJ = 25 ° C n-to-Nor ai 1 ai( Dr Dr -I , D V20 D µ Ss =P -U1L5SVE WIDTH R , DS(on) 0.5 VGS=-10V 0.1 0.0 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -VG S , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:3) 4000 14 VGS=0V, f = 1MHz ID=-8A CCCirssss ===CCCggsd++ CCgd , Cd s SHORTED e (V) 12 VVDDSS==--1254VV oss ds gd g pF) 3000 Ciss olta 10 ( V e e c c n r 8 a u cit 2000 So a - p o 6 Ca e-t C, Gat 4 1000 Coss V , GS 2 Crss - 0 0 1 10 100 0 10 20 30 40 50 60 -VD S , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R A) DS(on) Current ( 10 TJ = 150 ° C nt (A)nt (A) 100 Drain TJ = 25 ° C CurreCurre e n n ers DraiDrai 100us -I , RevSD 1 -I , I , D 10 TC= 25 ° C 1ms TJ= 150 ° C 10ms V G S = 0 V Single Pulse 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 -VS D ,Source-to-Drain Voltage (V) -VD S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:3) 10.0 (cid:14) (cid:2) (cid:13) (cid:2)(cid:3) (cid:13) 8.0 (cid:4)(cid:3) (cid:15)(cid:11)(cid:16)(cid:11)(cid:17)(cid:11) A) (cid:14) ( (cid:4) nt +- (cid:13)(cid:2)(cid:2) e r 6.0 r u (cid:13) C (cid:4)(cid:3) n (cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:1)(cid:10)(cid:11)(cid:12)(cid:13)(cid:14)(cid:1)≤ 1 (cid:15)(cid:8) ai (cid:2)(cid:6)(cid:13)(cid:16)(cid:1)(cid:17)(cid:18)(cid:19)(cid:13)(cid:20)(cid:21)(cid:1)≤ 0.1 % Dr 4.0 -I , D Fig 10a. Switching Time Test Circuit 2.0 td(on) tr td(off) tf VGS 0.0 10% 25 50 75 100 125 150 TTC A , Case Temperature( ° C) 90% Fig 9. Maximum Drain Current Vs. VDS Case Temperature Fig 10b. Switching Time Waveforms 1000 ) Z thJA 100 ( e D = 0.50 s n o 0.20 esp 10 0.10 R al 0.05 PDM herm 1 00..0012 t1 t2 T SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D =t 1 / t2 2. Peak TJ=PDMx ZthJA+ TA 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Rectangular Pulse Duration (sec) 1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:3) Ω)Reanescs( ti 00..005600 Ω )Ressance (it 00..017050 On 0.040 On Souecr 0.030 ID = -8.0A Souecr 0.050 Dnoa-r- t,in)00..001200 Dano, r--itn) 0.025 VGS = -4.5V VGS = -10V o o DS( S( R D 0.000 R 0.000 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 10 20 30 40 50 60 70 -VGS, Gate -to -Source Voltage (V) -ID , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs. Gate Voltage Drain Current Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF - (cid:1)(cid:2)(cid:3)(cid:4) D.U.T. +VDS Q Q GS GD VGS V -3mA G IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:3) SO-8 Package Outline Dimensions are shown in milimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX A 5 A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c .0075 .0098 0.19 0.25 6 H D .189 .1968 4.80 5.00 E 0.25 [.010] A E .1497 .1574 3.80 4.00 1 2 3 4 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 6X e K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 K x 45° A C θ y 0.10 [.004] 8X b A1 8X L 8X c 0.25 [.010] C A B 7 FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW = WEEK INTERNATIONAL F7101 A = ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO PART NUMBER www.irf.com 7

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:3) SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/2010 8 www.irf.com

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