Si7960DP Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Available 0.021 at VGS = 10 V 9.7 (cid:129) TrenchFET® Power MOSFET 60 0.025 at V = 4.5 V 8.9 (cid:129) New Low Thermal Resistance PowerPAK® GS Package (cid:129) Dual MOSFET for Space Savings PowerPAK SO-8 6.15 mm 1 S1 G1 5.15 mm D1 D2 2 S2 3 G2 4 D1 8 D1 7 D2 G1 G2 6 D2 5 Bottom View Ordering Information:Si7960DP-T1-E3 (Lead (Pb)-free) S1 S2 Si7960DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 60 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 9.7 6.2 Continuous Drain Current (TJ = 150 °C)a TA = 70 °C ID 7.8 5.0 A Pulsed Drain Current I 40 A DM Continuous Source Current (Diode Conduction)a IS 2.9 1.2 Single Avalanche Current L = 0.1 mH I 23 AS Single Avalanche Energy E 27 mJ AS T = 25 °C 3.5 1.4 Maximum Power Dissipationa TA = 70 °C PD 2.2 0.9 W A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg °C Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 26 35 Maximum Junction-to-Ambienta Steady State RthJA 60 85 °C/W Maximum Junction-to-Case (Drain) Steady State R 2.2 2.7 thJC Notes: a.Surface Mounted on 1" x 1" FR4 board. b.See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73075 www.vishay.com S09-0223-Rev. B, 09-Feb-09 1

Si7960DP Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA V = 60 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current IDSS µA V = 60 V, V = 0 V, T = 55 °C 5 DS GS J On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A V = 10 V, I = 9.7 A 0.017 0.021 GS D Drain-Source On-State Resistancea RDS(on) Ω V = 4.5 V, I = 8.9 A 0.020 0.025 GS D Forward Transconductancea gfs VDS = 15 V, ID = 9.7 A 33 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 49 75 Gate-Source Charge Qgs VDS = 30 V, VGS = 10 V, ID = 9.7 A 5.7 nC Gate-Drain Charge Qgd 8.6 Gate Resistance Rg f = 1 MHz 2 Ω Turn-On Delay Time td(on) 12 20 Rise Time tr VDD = 30 V, RL = 30 Ω 12 20 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 60 90 ns Fall Time tf 17 30 Source-Drain Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs 30 60 Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 40 VGS=10 V thru 4 V 35 35 30 30 Current(A) 2205 Current(A) 2205 -DrainID 1105 -DrainID 1105 TC = 125 °C 25 °C 5 3V 5 - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0. 5 1.0 1. 5 2.0 2. 5 3.0 3. 5 4.0 4. 5 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73075 2 S09-0223-Rev. B, 09-Feb-09

Si7960DP Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.030 4000 3500 0.025 ()Ω VG S =4. 5 V 3000 Ciss sistance 0.020 nce (pF) 2500 n-Re 0.015 VG S =10 V acita 2000 O p - Ca 1500 DS(on) 0.010 C - 1000 R 0.005 Coss Crss 500 0.000 0 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 ID-DrainCurrent(A) VDS-Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current Capacitance 1.8 10 VI DD =S 9=. 72 0 AV 1.6 VI DG =S 9=. 71 0 A V V) 8 ( e e g c Gate-to-SourceVolta 46 R-On-ResistanDS(on)(Normalized) 111...024 - GS 2 0.8 V 0.6 0 - 50 - 25 0 2 5 5 0 7 5 100 125 150 0 10 20 30 40 5 0 Qg-TotalGateCharge(nC) TJ-JunctionTemperature(°C) Gate Charge On-Resistance vs. Junction Temperature 0.05 40 )Ω 0.04 A) TJ=150 °C ce ( I D = 9.7 A ( n eCurrent 10 n - R esista 0.03 c O Sour -n) 0.02 -IS RDS(o 0.01 TJ=25 °C 1 0.00 0.0 0. 2 0.4 0. 6 0.8 1. 0 1.2 0 2 4 6 8 1 0 VSD-Source-to-DrainVoltage(V) VGS-Gate-to-SourceVoltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73075 www.vishay.com S09-0223-Rev. B, 09-Feb-09 3

Si7960DP Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.6 100 0.4 80 0.2 ID=250µA 0 . 0 V) -0 . 2 W) 60 ( ( h) -0 . 4 er VGS(t -0 . 6 Pow 40 -0 . 8 -1 . 0 20 -1. 2 -1. 4 0 - 50 -25 0 2 5 5 0 7 5 100 125 150 0.001 0.01 0.1 1 10 100 600 TJ -Temperature(°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* IDMLimited 10 100 µs A) ent ( 1 ms C urr 1 LIiDm(oitne)d 10 ms n ai Dr 100 ms - D I 0.1 STinA g =le2 P5 u l°sCe 1 s 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS- Drain-to-SourceVoltage(V) * VGS > minimum VGS at which RDS(on )is specified Safe Operating Area, Junction-to-Ambient 2 1 Dut y Cy c l e = 0. 5 nt e si Trannce 0.2 ectivempeda 0.1 No te s: EffalI 0.1 P DM NormalizedTherm 00..0052 1 . Du ty Cyt 1c let , 2 D = tt 12 2. Per Un it B ase = Rt hJ A =60 °C/W Single Pu lse 3. TJ M -TA=PDMZthJA(t) 4. Surf a ce Mo unted 0.01 10 -4 10 -3 10 -2 10 -1 1 1 0 100 600 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com Document Number: 73075 4 S09-0223-Rev. B, 09-Feb-09

Si7960DP Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2 1 ent Dut y Cy c l e = 0. 5 si e T randance 0.2 ve ectimp 0.1 Ef falI d m 0.1 zeer aliTh 0.05 m or 0.02 N Single Pu lse 0.01 10 -4 10 -3 10 -2 10 -1 1 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73075. Document Number: 73075 www.vishay.com S09-0223-Rev. B, 09-Feb-09 5

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