Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D C 5 April 2015 6 1 4 P FDC5614P  60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high • –3 A, –60 V. R = 0.105 Ω @ V = –10 V voltage PowerTrench process. It has been optimized for DS(ON) GS R = 0.135 Ω @ V = –4.5 V power management applications. DS(ON) GS Applications • Fast switching speed • High performance trench technology for extremely • DC-DC converters low R • Load switch DS(ON) • Power management S D 1 6 D 2 5 G D 3 4 SuperSOT T M-6 D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –60 V DSS VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) –3 A – Pulsed –20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .564 FDC5614P 7’’ 8mm 3000 units 2002 Fairchild Semiconductor Corporation FDC5614P Rev. 1.4

F D Electrical Characteristics T = 25°C unless otherwise noted C A 5 Symbol Parameter Test Conditions Min Typ Max Units 6 1 Off Characteristics 4 P BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V ∆BVDSS Breakdown Voltage Temperature ID = –250 µA, Referenced to –49 mV/°C ∆T Coefficient 25°C J IDSS Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA I Gate–Body Leakage, Forward V = 20V, V = 0 V 100 nA GSSF GS DS I Gate–Body Leakage, Reverse V = –20 V V = 0 V –100 nA GSSR GS DS On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V ∆VGS(th) Gate Threshold Voltage ID = –250 µA,Referenced to 25°C 4 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = –10 V, ID = –3 A 82 105 mΩ On–Resistance VGS = –4.5 V, ID = –2.7 A 105 135 V = –10 V, I = –3 A T=125°C 130 190 GS D J I On–State Drain Current V = –10 V, V = –5 V –20 A D(on) GS DS g Forward Transconductance V = –5 V, I = –3 A 8 S FS DS D Dynamic Characteristics Ciss Input Capacitance VDS = –30 V, V GS = 0 V, 759 pF C Output Capacitance f = 1.0 MHz 90 pF oss C Reverse Transfer Capacitance 39 pF rss Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = –30 V, ID = –1 A, 7 14 ns tr Turn–On Rise Time VGS = –10 V, RGEN = 6 Ω 10 20 ns t Turn–Off Delay Time 19 34 ns d(off) t Turn–Off Fall Time 12 22 ns f Qg Total Gate Charge VDS = –30V, ID = –3.0 A, 15 24 nC Qgs Gate–Source Charge VGS = –10 V 2.5 nC Q Gate–Drain Charge 3.0 nC gd Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current –1.3 A S VSD Drain–Source Diode Forward VGS = 0 V, IS = –1.3 A (Note 2) –0.8 –1.2 V Voltage Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC5614P Rev. 1.4

F D Typical Characteristics C 5 6 1 4 P 15 1.8 129 VGS --=65 ..-001VV0V -4-.45.V0V -3.5V RMALIZEDON-RESISTANCE 11..46 VGS = -3.5V -4.0V -4.5V 36 -3.0V R, NODS(ON)AIN-SOURCE 1.12 -5.0V -6.0V -7.0V -8.0V -10V R D -2.5V 0.8 0 0 2 4 6 8 10 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.4 1.6 VIDG S= = - 3-.100AV ID = -1.5A 0.3 1.4 1.2 TA = 125oC 0.2 1 0.8 0.1 0.6 TA = 25oC 0.4 0 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 15 100 VDS = -5V TA = -55oC 25oC VGS = 0V 12 10 125oC TA = 125oC 9 1 25oC -55oC 6 0.1 3 0.01 0 0.001 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC5614P Rev. 1.4

F D Typical Characteristics C 5 6 1 4 P 10 1200 AGE (V) 8 ID = -3.0A VDS = -10V -20V 1000 fV =G S1 = M 0H Vz OLT -30V 800 E V 6 CISS C R 600 U SO 4 E- 400 T A -V, GGS 2 200 CRSS COSS 0 0 0 4 8 12 16 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 40 SINGLE PULSE T (A) 10 RDS(ON) LIMIT 100µs 30 RθJTA A= = 1 2556°°CC/W N 10ms E RR 100ms N CU 1 1s 20 DRAI VGS = -10V 10s -I, D 0.1 SRIθNJAG =L E1 5P6UoCLS/WE DC 10 TA = 25oC 0.01 0 0.1 1 10 100 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 RθJA(t) = r(t) + RθJA 0.1 0.1 RθJA = 156°C/W 0.05 P(pk) 0.02 0.01 t1 0.01 t2 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDC5614P Rev. 1.4

SYMM C L C 0.95 0.95 3.00 A 2.80 6 4 1.00 MIN B 3.00 2.60 2.60 1.70 C 1.50 1 3 0.50 0.95 0.30 0.70 MIN 0.20 M A B 1.90 LAND PATTERN RECOMMENDATION (0.30) SEE DETAIL A 1.10 MAX H 1.00 0.70 C 0.20 0.10 0.08 0.00 0.10 C NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC MO-193. VAR. AA, ISSUE E. B) ALL DIMENSIONS ARE IN MILLIMETERS. GAGE PLANE C PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.25mm PER END. PACKAGE WIDTH 0.25 DOES NOT INCLUDE INTERLEAD FLASH OR 8° PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25mm PER 0° SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS ARE DETERMINED AT DATUM H. 0.55 D) DRAWING FILE NAME: MKT-MA06AREVF 0.35 SEATING PLANE 0.60 REF DETAIL A SCALE: 50X

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FDC5614P FDC5614P_D87Z