AO6405 30V P-Channel MOSFET General Description Product Summary The AO6405 uses advanced trench technology to provide VDS -30V excellent RDS(ON) with low gate charge. This device is ID (at VGS=10V) -5A suitable for use as a load switch or in PWM applications. R (at V =10V) < 52mW DS(ON) GS R (at V = 4.5V) < 87mW DS(ON) GS TTSSOOPP66 DD TToopp VViieeww BBoottttoomm VViieeww TToopp VViieeww DD 11 66 DD DD 22 55 DD GG 33 44 SS GG SS PPiinn11 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DDSS Gate-Source Voltage V ±20 V GS Continuous Drain TA=25°C I -5 Current T =70°C D -4.2 A A Pulsed Drain Current C I -20 DM T =25°C 2 A P W Power Dissipation B T =70°C D 1.3 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 47.5 62.5 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 74 110 °C/W Maximum Junction-to-Lead Steady-State RqJL 37 50 °C/W Rev 5: Nov 2011 www.aosmd.com Page 1 of 5

AO6405 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250m A, V =0V -30 V DSS D GS V =-30V, V =0V -1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C -5 J I Gate-Body leakage current V =0V, V = ±20V ±100 nA GSS DS GS V Gate Threshold Voltage V =V I =-250m A -1.4 -1.9 -2.4 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -20 A D(ON) GS DS V =-10V, I =-5A 34 52 GS D mW R Static Drain-Source On-Resistance T=125°C 52 70 DS(ON) J V =-4.5V, I =-4A 54 87 mW GS D g Forward Transconductance V =-5V, I =-5A 10 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -2.5 A S DYNAMIC PARAMETERS C Input Capacitance 520 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 100 pF oss GS DS C Reverse Transfer Capacitance 65 pF rss R Gate resistance V =0V, V =0V, f=1MHz 3.5 7.5 11.5 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 9.2 11 nC g Q (4.5V) Total Gate Charge 4.6 6 nC g V =-10V, V =-15V, I =-5A GS DS D Q Gate Source Charge 1.6 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 7.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1155VV,, RR ==33WW ,, 55..55 nnss r GS DS L t Turn-Off DelayTime R =3W 19 ns D(off) GEN t Turn-Off Fall Time 7 ns f trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/m s 11 ns Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/m s 5.3 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT=25°C. J D. The RqJAis the sum of the thermal impedence from junction to lead RqJLand lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Nov 2011 www.aosmd.com Page 2 of 5

AO6405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3300 3300 2255 --66VV 2255 VVDDSS==--55VV --1100VV --44..55VV 2200 2200 -I(A)-I(A)DD 1155 --44VV -I(A)-I(A)DD1155 1100 1100 112255°°CC 2255°°CC 55 VV ==--33..55VV 55 GGSS 00 00 00 11 22 33 44 55 00..55 11..55 22..55 33..55 44..55 55..55 FFiigg 11:: OOnn--RReeggiioo--nnVV DDCCSShh((aaVVrrooaallccttssttee))rriissttiiccss ((NNoottee EE)) FFiigguurree 22:: TTrraannssff--eeVVrr GGCCSS(h(hVVaaoorraallttccsstt))eerriissttiiccss ((NNoottee EE)) 8800 11..88 7700 ee 6600 VVGGSS==--44..55VV stancstanc 11..66 VIVIDDGG==SS--==55-A-A1100VV WWWWWWWWm)m) 5500 ResiResi 11..44 17 (( n-n- N)N) OO 5 RRDS(ODS(O 34340000 alized alized 11..22 120 mm VV ==--44..55VV 2200 VVGGSS==--1100VV NorNor 11 IIDDGG==SS--44AA 1100 00..88 00 22 44 66 88 1100 00 2255 5500 7755 110000 112255 115500 117755 --IIDD((AA)) TTeemmppeerraattuurree ((°°CC)) 0 FFiigguurree 33:: OOnn--RReessiissttaannccee vvss.. DDrraaiinn CCuurrrreenntt aanndd GGaattee VVoollttaaggee ((NNoottee EE)) FFiigguurree 44:: OOnn--RReessiissttaannccee vvss.. JJuunnccttiioonn1 8TTeemmppeerraattuurree ((NNoottee EE)) 120 1.0E+02 I =-5A D 1.0E+01 100 40 1.0E+00 WWWWm) 80 A) 1.0E-01 125°C (ON) 125°C -I(S 1.0E-02 DS( 60 25°C R 1.0E-03 40 25°C 1.0E-04 20 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -V (Volts) -V (Volts) GS SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev 5: Nov 2011 www.aosmd.com Page 3 of 5

AO6405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1100 880000 VV ==--1155VV DDSS II ==--55AA 88 DD 660000 CC iissss F)F) olts)olts) 66 ce (pce (p V(VV(VGSGS 44 acitanacitan 440000 -- pp CaCa CCoossss 220000 22 CC 00 00 rrssss 00 22 44 66 88 1100 00 55 1100 1155 2200 2255 3300 QQ ((nnCC)) --VV ((VVoollttss)) gg DDSS FFiigguurree 77:: GGaattee--CChhaarrggee CChhaarraacctteerriissttiiccss FFiigguurree 88:: CCaappaacciittaannccee CChhaarraacctteerriissttiiccss 110000..00 4400 TT ==2255°°CC AA 1100mm ss 1100..00 3300 RR s)s) lliimmDDSSiitt((eeOOddNN)) 110000mm ss W)W) I(AmpI(AmpDD 11..00 11111100m0m0mmmmssssss Power (Power ( 2200 110000mmss 00..11 TT ==115500°°CC 1100ss 1100 JJ((MMaaxx)) TTAA==2255°°CC DDCC 00..00 00 00..0011 00..11 11 1100 110000 00..00000011 00..0011 11 110000 VVDDSS((VVoollttss)) PPuullssee WWiiddtthh ((ss)) FFiigguurree 1100:: SSiinnggllee PPuullssee PPoowweerr RRaattiinngg JJuunnccttiioonn--ttoo-- FFiigguurree 99:: MMaaxxiimmuumm FFoorrwwaarrdd BBiiaasseedd SSaaffee AAmmbbiieenntt ((NNoottee FF)) OOppeerraattiinngg AArreeaa ((NNoottee FF)) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e Transistance 1 RqJA=110°C/W d si ee malizmal R 0.1 Norher P JAT 0.01 D Zqqqq Single Pulse T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: Nov 2011 www.aosmd.com Page 4 of 5

AO6405 GGaattee CChhaarrggee TTeesstt CCiirrccuuiitt && WWaavveeffoorrmm VVggss QQgg -- --1100VV VVDDCC -- QQggss QQggdd ++ VVddss VVDDCC ++ DDUUTT VVggss IIgg CChhaarrggee RReessiissttiivvee SSwwiittcchhiinngg TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss RRLL VVddss ttoonn ttooffff VVggss ttdd((oonn)) ttrr ttdd((ooffff)) ttff -- VVggss DDUUTT VVdddd 9900%% VVDDCC RRgg ++ VVggss 1100%% VVddss DDiiooddee RReeccoovveerryy TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss VVddss ++ QQ rr rr == -- IIddtt DDUUTT VVggss Vds - L -Isd -I trr Isd F dI/dt + -I Vgs VDC Vdd RM Vdd - -Vds Ig Rev 5: Nov 2011 www.aosmd.com Page 5 of 5