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yaM 1998 N 9SD 549 rot s ti tnsedcendlemaoeferMi fcTFlEnea nh nnlaEahuCD-N noitpircs e lDaren e G serutaeF 8-OS lennahC-N tnemecnahne edom rewop dleiftceffe 5.3 6 ,A V 0 R. 001.0 = W @V 01 = ,V srotsisnart era decudorp gnisudlihcriaF s' ,yrateirporphgih R NO(SD 002.0 = ) W @V GS 4 = .V 5. llec ,ytisned SOMD .ygolonhcet sihT yrev hgihytisned NO(SD ) GS ssecorp syil ldaeircoelpisaet ot edi vroorigprneiphucstiws ngised llec ytisned hgiH R wol ylemertxe rof . )NO(SD ecnamrofrep dna eziminim etats-no ecnatsiser . esehT secived era ylralucitr adpetius rof wol egatlsonvoitacilppa ylediw a ni ytilibapac gnildnah tnerruc dna rewop hgiH hcus sa ksid evird rotom ,lortnoc yrettab derewopstiucric .egakcap tnuom ecafrus desu ereh w ,tgsnaifhc twio wlesnil -rneiwo p,ssol edcnnaatsiser .egakcap tnuom ecafrus ni TEFSOM lauD .dedeen era stneisnart ot SOT-23 SuperSOT TM -6 SuperSOT TM -8 8-OS SOT-223 SOIC-16 2D 5 4 2D 1D 1D SDN 6 3 5499 7 2 2G 2S 1G 8 1 8-OS nip 1 1S sgnitaR mumixaM etulosbA T 52 = deton esiw rehto soselnu C A lobmyS retemaraP N 5499SD stinU V egatloV ecruoS-niarD 06 V SSD V egatloV ecruoS-etaG ± 02 V SSG ID suounitnoC - tnerruC niarD )a1 etoN( 5.3 A desluP - 01 P noitarepO lauD rof noitapissiD rewoP 2 W D noitapissiD rewoP noitarepO elgniS rof )a1 etoN( 6.1 )b1 etoN( 1 )c1 etoN( 9.0 T T, egnaR erutarepmeT egarotS dna gnitarepO 051 ot 55- C° J GTS SCITSIRETCARAHC LAMREHT R qAJ tneibmA-ot-noitcnuJ ,ecnatsiseR lamrehT a1 etoN( ) 87 W/C° R qCJ esaC-ot-noitcnuJ ,ecnatsiseR lamrehT )1 etoN( 04 W/C° 5499SDN Rev.B © 1998 Fairchild Semiconductor Corporation

scitsiretcarahC lacirtcelE ( T 52 = ) deton esiwrehOto sselnu C A lobmyS retemaraP snoitidnoC niM pyT xaM stinU SCITSIRETCARAHC FFO VB egatloV nwodkaerB ecruoS-niarD V I ,V 0 = = Aµ 052 06 V SSD SG D D VB /D T tneiciffeoC .pmeT egatloV nwodkaerB I = Aµ 052 52 ot decnerefeR , oC 06 /Vm oC SSD J D I tnerruC niarD egatloV etaG oreZ V 84 = ,V V V 0 = 1 µ A SSD SD SG I drawroF ,egakaeL ydoB - etaG V 02 = ,V V V 0 = 001 An FSSG SG SD I esreveR ,egakaeL ydoB - etaG V 02- = ,V V V 0 = 001- An RSSG SG SD SCITSIRETCARAHC NO 2 etoN( ) V egatloV dlohserhT etaG V V = I , 052 = µ A 1 7.1 3 V SG )ht( SD SG D T 21= C°5 7.0 2.2 J R ecnatsiseR-nO ecruoS-niarD citatS V 01 = ,V I 3 = 5. A 670.0 1.0 W )NO(SD SG D T 21= C°5 421.0 81.0 J V = 4 .5 ,V I = 2 5. A 301.0 2.0 SG D T 21= C°5 661.0 3.0 J I tnerruC niarD etatS-nO V 01 = V ,V 01 = V 01 A )NO(D SG SD g ecnatcudnocsnarT drawroF V 01 = I ,V 3 = 5. A 3.5 S SF SD D CIMANYD SCITSIRETCARA HC C ecnaticapaC tupnI V 52 = V ,V ,V 0 = 543 Fp ssi SD SG zHM 0.1 = f C ecnaticapaC tuptuO 011 Fp sso C ecnaticapaC refsnarT esreveR 52 Fp ssr HC GNIHCTIWS SCITSIRETCARA )2 etoN( t emiT yaleD nO - nruT V 03 = ,V I 1 = A 5 52 sn no(D ) SD D t emiT esiR nO - nruT V 01 = V R , 6 = W 5.7 03 r SG NEG t emiT yaleD ffO - nruT 02 05 )ffo(D t emiT llaF ffO - nruT 7 04 f Q egrahC etaG latoT V 03 = I ,V 3 = 5. ,A 9.21 03 Cn g SD D Q egrahC ecruoS-etaG V 01 = V 7.1 sg SG Q egrahC niarD-etaG 2.3 dg SGNITAR MUMIXAM DNA SCITSIRETCARAHC EDOID ECRUOS-NIARD I tnerruC drawroF edoiD ecruoS-niarD suounitnoC mumixaM 3.1 A S V DS egatloV drawroF edoiD ecruoS-niarD V SG I ,V 0 = S 3.1 = A 2 e toN( ) 8.0 2.1 V t emiT yrevoceR esreveR V I ,V 0 = 3.1 = , A 04 sn rr SG F Id sµ/A 001 = td/ I tnerruC yrevoceR esreveR F 5.1 A rr Notes: 1. R eht sa denifed si ecnerefer lamreht esac eht erehw ecnatsiser lamreht tneibma-ot-esac dna esac-ot-noitcnuj eht fo mus eht si .snip niard eht fo ecafrus gnitnuom redlos R deetnaraug si yb qAJ qJC R elihw ngised .ngised draob s'resu eht yb denimreted si qAC a87 . O no W/C 5.0 a ni 2 b21 . 5O no W/C 20.0 a ni 2 31 .c 5O no W/C 300.0 a ni 2 pado f2 oz .reppoc pado f 2 oz .reppoc pado f2 oz .reppoc repap ezis rettel no 1 : 1 elacS .2 htdiW esluP :tseT esluP <µ003 elcyC ytuD ,s <.%0.2 5499SDN Rev.B

scitsiret claarcaih rCltacceilpEyT 02 5.2 V = 10V SG V0. 6 V0. 5 52.2 V = 3.0V GS 51 V5. 4 2 5.3V V0. 4 57.1 01 4.0 V 5.1 5.4V V5. 3 5.0V 5 DS(ON) 52.1 6.0V V0. 3 R , NORMALIZED 1 10V I , DRAIN-SOURCE CURRENT (A)D DRAIN-SOURCE ON-RESISTANCE 0 57.0 0 1 2 3 4 5 0 2 4 6 8 01 )V( EGATLOV ECRUOS-NIARD , V SD )A( TNERRUC NIARD , ID scitsiretcarahC noigeR-nO .1 erugiF . htiw noitairaV ecnatsiseR-nO .2 erugiF egatloV etaG dna tnerruC niarD . 2 4.0 8.1 V = 10VI = 3.5ADGS I =A2 D 6.1 3.0 4.1 2.1 2.0 1 T =125°C A 8.0 1.0 DS(ON) R , NORMALIZED 6.0 T =25°C A DRAIN-SOURCE ON-RESISTANCE 4.0 R , ON-RESISTANCE (OHM)DS(ON) 0 05- 52- 0 52 05 57 001 521 051 2 4 6 8 01 )C° (ERUTAREPME TNOITCNU J ,TJ V E)GVA( TEL C OE R,VTOUATOGS GS Figure 3. On-Resistance Variation With Figure 4. On Resistance Variation with Temperature. Gate-to-Source Voltage. 01 01 V = 5V DS T =C°55-J 25°C V = 0V GS 8 125°C 5 T = 125°C J 3 2 6 25°C 1 -55°C 4 5.0 I , DRAIN CURRENT (A)D 2 3.0 2.0 0 I , REVERSE DRAIN CURRENT (A)S1.0 1 5.1 2 5.2 3 5.3 4 5.4 5 4.0 6.0 8.0 1 2.1 )V( EGATLOV ECRUOS OT ETAG , V GS )V( EGATLOV DRAWROF EDOID YDOB , V SD 5 erugiF .scitsiretcarahC refsnarT . Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 5499SDN Rev.B

Typical Electrical scitsiretcarahC (continued) 1000 01 A 5 I . 3=D V= 1 0V SD 400 C ssi 8 V03 V04 200 6 C oss 100 4 05 C ssr CAPACITANCE (pF) 2 02 zH M 1 = f V 0 V= GS V , GATE-SOURCE VOLTAGE (V)GS 0 0 2 4 6 8 01 21 41 01 0.1 3.0 1 3 01 02 05 Q , GATE CHARGE (nC) g V, D RAINT OS OURCEV OLTAGE( V)SD Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 30 05 su001 ESLU PELGNIS 10 1ms 04 W/C°5 3 R1 = qJA C°5 2 =T 3 T I)MNIOL(SDR sm01 A 1 sm001 03 1s 0.3 02 0.1 SINGLE PULSE V =10V GS CD10s POWER (W) 01 I , DRAIN CURRENT (A)D R = 135°C/W qJA 0.03 T = 25°C A A 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 100.00 0.01 1.0 1 01 100 300 V , DRAIN-SOURCE VOLTAGE (V) DS SINGLPEU LSTEI M(ES EC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 5.0 D=0 .5 2.0 0 . 2 R (t) = r(t) * R qAJ qAJ 1.0 0 .1 R = qJA 531 °C/W 50.0 0.0 5 P(pk) 0.0 2 1200..00 0.0 1 elgniS esluP t 1 t 2 500.0 T- T = P * R ( t)J A qAJ Duty Cycle, D = t /t 1 2 r(t), NORMALIZED EFFECTIVE 200.0 TRANSIENT THERMAL RESISTANCE 100.0 1000.0 100.0 10.0 1.0 1 01 001 003 )ces( EMIT , t1 Figure 11. Transient Thermal Response Curve. d enbiir Ncssneodit i g dendnhieotsmcuro fnroeiptazi retc a rlaahm crehT ote 1c. .ngised draob tiucric eht no gnidneped egnahc lliw esnopser lamreht tneisnarT 5499SDN Rev.B

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