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FDMA908PZ产品简介:

ICGOO电子元器件商城为您提供FDMA908PZ由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FDMA908PZ价格参考。Fairchild SemiconductorFDMA908PZ封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 P 沟道 12V 12A(Ta) 2.4W(Ta) 6-MicroFET(2x2)。您可以下载FDMA908PZ参考资料、Datasheet数据手册功能说明书,资料中有FDMA908PZ 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET P-CH 12B 6QFNMOSFET -12V Single P-Channel PowerTrench MOSFET

产品分类

FET - 单分离式半导体

FET功能

逻辑电平门

FET类型

MOSFET P 通道,金属氧化物

Id-ContinuousDrainCurrent

- 12 A

Id-连续漏极电流

- 12 A

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

产品系列

晶体管,MOSFET,Fairchild Semiconductor FDMA908PZPowerTrench®

数据手册

点击此处下载产品Datasheet

产品型号

FDMA908PZ

Pd-PowerDissipation

0.9 W, 2.4 W

Pd-功率耗散

900 mW, 2.4 W

RdsOn-Drain-SourceResistance

13 mOhms

RdsOn-漏源导通电阻

13 mOhms

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

Vds-Drain-SourceBreakdownVoltage

- 12 V

Vds-漏源极击穿电压

- 12 V

Vgs-Gate-SourceBreakdownVoltage

8 V

Vgs-栅源极击穿电压

8 V

Vgsth-Gate-SourceThresholdVoltage

- 0.6 V

Vgsth-栅源极阈值电压

- 0.6 V

上升时间

12 ns

下降时间

71 ns

不同Id时的Vgs(th)(最大值)

1V @ 250µA

不同Vds时的输入电容(Ciss)

3957pF @ 6V

不同Vgs时的栅极电荷(Qg)

34nC @ 4.5V

不同 Id、Vgs时的 RdsOn(最大值)

12.5 毫欧 @ 12A, 4.5V

产品种类

MOSFET

供应商器件封装

MicroFET 2x2

其它名称

FDMA908PZCT

典型关闭延迟时间

131 ns

功率-最大值

900mW

包装

剪切带 (CT)

单位重量

30 mg

商标

Fairchild Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻

13 mOhms

封装

Reel

封装/外壳

6-WFDFN 裸露焊盘

封装/箱体

MicroFET-6 2x2

工厂包装数量

3000

晶体管极性

P-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1

正向跨导-最小值

60 S

汲极/源极击穿电压

- 12 V

漏极连续电流

- 12 A

漏源极电压(Vdss)

12V

电流-连续漏极(Id)(25°C时)

12A (Ta)

系列

FDMA908

配置

Single

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M A February 2014 9 0 8 FDMA908PZ P Z Single P-Channel PowerTrench® MOSFET S i n g -12 V, -12 A, 12.5 mΩ l e Features P - C (cid:132) Max r = 12.5 mΩ at V = -4.5 V, I = -12 A General Description h DS(on) GS D a (cid:132) Max r = 18 mΩ at V = -2.5 V, I = -10 A This device is designed specifically for battery charge or load n DS(on) GS D n switching in cellular handset and other ultraportable applications. (cid:132) Max r = 28 mΩ at V = -1.8 V, I = -8 A e DS(on) GS D It features a MOSFET with low on-state resistance and zener l (cid:132) Low Profile - 0.8 mm maximum in the new package MicroFET diode protection against ESD. The MicroFET 2X2 package P o 2x2 mm offers exceptional thermal performance for its physical size and w is well suited to linear mode applications. e (cid:132) HBM ESD protection level > 2.8 kV typical (Note 3) r T (cid:132) Free from halogenated compounds and antimony oxides r e n (cid:132) RoHS Compliant c h ® M O S Pin 1 D D G F E Bottom Drain Contact T D D Drain Source D D G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage -12 V DS V Gate to Source Voltage ±8 V GS Drain Curre -Continuous T = 25 °C (Note 1a) -12 I A A D -Pulsed -40 Power Dissipation T = 25 °C (Note 1a) 2.4 P A W D Power Dissipation T = 25 °C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 908 FDMA908PZ MicroFET 2X2 7 ” 12 mm 3000 units ©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMA908PZ Rev.E3

F Electrical Characteristics D T = 25 °C unless otherwise noted J M Symbol Parameter Test Conditions Min Typ Max Units A 9 Off Characteristics 0 8 P BV Drain to Source Breakdown Voltage I = -250 μA, V = 0 V -12 V DSS D GS Z ΔBV Breakdown Voltage Temperature DSS I = -250 μA, referenced to 25 °C -10 mV/°C S ΔTJ Coefficient D in I Zero Gate Voltage Drain Current V = -9.6 V, V = 0 V -1 μA g DSS DS GS l I Gate to Source Leakage Current V = ±8 V, V = 0 V ±10 μA e GSS GS DS P On Characteristics -C h VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.6 -1 V a ΔV Gate to Source Threshold Voltage n GS(th) I = -250 μA, referenced to 25 °C 2.8 mV/°C n ΔTJ Temperature Coefficient D e l V = -4.5 V, I = -12 A 10 12.5 GS D P V = -2.5 V, I = -10 A 13 18 o GS D w rDS(on) Static Drain to Source On Resistance VGS = -1.8 V, ID = -8 A 18 28 mΩ e V = -4.5 V, I = -12 A, r GS D 13 16 T TJ = 125 °C re g Forward Transconductance V = -5 V, I = -12 A 63 S n FS DD D c h Dynamic Characteristics ® C Input Capacitance 2638 3957 pF M iss C Output Capacitance VDS = -6 V, VGS = 0 V, 649 974 pF O oss f = 1 MHz S Crss Reverse Transfer Capacitance 602 903 pF F E Switching Characteristics T t Turn-On Delay Time 11 21 ns d(on) V = -6 V, I = -12 A, t Rise Time DD D 12 23 ns r V = -4.5 V, R = 6 Ω t Turn-Off Delay Time GS GEN 131 223 ns d(off) t Fall Time 71 121 ns f Qg Total Gate Charge VGS = -4.5 V, VDD = -6 V, 24 34 nC Q Gate to Source Charge I = -12 A 3.4 nC gs D Q Gate to Drain “Miller” Charge 5.3 nC gd Drain-Source Diode Characteristics V = 0 V, I = -2 A (Note 2) -0.6 -1.2 V V Source to Drain Diode Forward Voltage GS S SD V = 0 V, I = -12 A (Note 2) -0.8 -1.2 V GS S t Reverse Recovery Time 26 42 ns rr I = -12 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 8.5 17 nC rr NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 52 °C/W when mounted b. 145 °C/W when mounted on a on a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. GDDSS FSFS GDDSS FSFS 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMA908PZ Rev.E3

F D Typical Characteristics M T = 25 °C unless otherwise noted J A 9 40 3 0 8 VGS = -4.5 V NCE PZ A) 30 VGS = -3 V STA VGS = -1.5 V S T ( VGS = -2.5 V ESI 2 in CURREN 20 VGS = -1.8 V MALIZEDCE ON-R VGS = -1.8 V VGS = -2.5 V VGS = -3 V gle P -I, DRAIN D 10 VGS = -1.5 V PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs NORRAIN TO SOUR 1 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs VGS = -4.5 V -Channe D 0 0 l 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 P -VDS, DRAIN TO SO URCE VOLTAGE (V) -ID, DRAIN CURR ENT (A) ow e Figure 1. On-Region Characteristics Figure 2. Normalized On- Resistance r T vs Drain Current and Gate Voltage r e n 60 c NORMALIZED O SOURCE ON-RESISTANCE 011111......901234 IVDG =S =-1 2-4A.5V rDRAIN TO ,DS(on)()URCE ON-RESISTANCE mΩ2400 TPDJUU =LT 1SY2E C5 D YoIDUCC =RL EA-1 T=2I O 0A.N5 %= 8M0A μXs h MOSFET® T O N 0.8 S TJ = 25 oC AI R 0 D 0.7 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEM PERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 40 100 PULSE DURATION = 80 μs A) VGS = 0 V DUTY CYCLE = 0.5% MAX T ( EN 10 A) 30 R URRENT ( 20 VDS = -5 V TJ = 150 oC RAIN CUR 1 TJ = 150 oC N C TJ = 25 oC E D 0.1 TJ = 25 oC AI RS R E D 10 V -I, D TJ = -55 oC , RES0.01 TJ = -55 oC -I 0 0.001 0.0 0.5 1.0 1.5 2.0 0.0 0.4 0.8 1.2 -VGS, GATE TO SO URCE VOLTAGE (V) -VSD, BODY DIODE FO RWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMA908PZ Rev.E3

F D Typical Characteristics M T = 25 °C unless otherwise noted J A 9 4.5 5000 08 V) P E ( ID = -12A Ciss Z G OLTA3.0 VDD = -4V pF) Sin CE V VDD = -6V NCE ( gle O SOUR1.5 VDD = -8V PACITA1000 Coss P-C T A h TE C f = 1 MHz Crss a GA VGS = 0 V nn , S e -VG0.00 5 10 15 20 25 3000.1 1 10 20 l P Qg, GATE CH ARGE (nC) -VDS, DRAIN TO SOU RCE VOLTAGE (V) ow e Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain rT to Source Voltage r e n 10-3 60 c h GE CURRENT (A) 111000---654 VDS = 0 V TJ = 125 oC URRENT (A) 101 THIS AREA IS 110 m mss MOSFE® , -IGATE LEAKAg 111000---987 TJ = 25 oC -I, DRAIN CD 0.1 STTRLJAIθINM J ==AGI T M2=LE5 AE1 DXo 4PC 5BRU oYALC STr/DWEESD(on) CMUERAVSEU RBEEDN TD ATTOA 11D100 Cs0 s ms T 10-10 0.01 0 5 10 15 0.01 0.1 1 10 50 -VGS, GATE TO SOURCE VOLTAGE (V) -VDS, DRAIN to SOU RCE VOLTAGE (V) Figure 9. Gate Leakage Current Figure 10. Gate Leakage Current vs Gate to Source Voltage vs Gate to Source Voltage 100 SINGLE PULSE R (W) RθJA = 145 oC/W OWE 10 TA = 25 oC P T N E NSI A R T 1 K A E P , K) P P( 0.1 10-3 10-2 10-1 1 10 100 1000 t, PULSE WIDTH (s ec) Figure 11. Single Pulse Maximum Power Dissipation ©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMA908PZ Rev.E3

F D Typical Characteristics M T = 25 °C unless otherwise noted J A 2 9 0 DUTY CYCLE-DESCENDING ORDER 8 1 P Z AL D = 00..25 S LIZED THERM ZEDANCE,JAθ0.1 0000....1000521 PDM t1 ingle P- NORMAIMP SRIθNJAG =L E1 4P5U oLCS/EW NDOUTTYE SF:ACTOR: D = t1/t2 t2 Chan (Note 1b) PEAK TJ = PDM x ZθJA x RθJA + TA n e l 0.01 P 10-3 10-2 10-1 1 10 100 1000 o t, RECTANGULAR PULSE DURATION (sec) w Figure 12. Junction-to-Ambient Transient Thermal Response Curve e r T r e n c h ® M O S F E T ©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMA908PZ Rev.E3

2.05 A 0.05 C (0.20) B (0.45) 2X 1.00 6 5 4 2.05 2.30 1.05 0.66 1.35 0.05 C 0.475(6X) PIN1LOCATION 2X 1 2 3 TOPVIEW 0.65 0.40(6X) RECOMMENDEDLANDPATTERN (cid:19)(cid:17)(cid:27)(cid:3)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) 0.10 C (cid:19)(cid:17)(cid:21)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) Pin Function 0.08 C 1 Drain 2 Drain (cid:19)(cid:17)(cid:19)(cid:21)(cid:24)(cid:147)(cid:17)(cid:19)(cid:21)(cid:24) C 3 Gate SEATING SIDEVIEW 4 Source PLANE 5 Drain 6 Drain 7 Drain 8 Source (cid:21)(cid:17)(cid:19)(cid:24)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) (cid:19)(cid:17)(cid:28)(cid:19)(cid:147)(cid:19)(cid:17)(cid:20)(cid:19) (0.200)4X NOTES: (0.15) PIN1IDENT (0.50) A.PACKAGEDOESNOTCONFORMTO 1 2 3 (0.30) ANYJEDECSTANDARD. (cid:19)(cid:17)(cid:25)(cid:20)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) B.DIMENSIONSAREINMILLIMETERS. (cid:19)(cid:17)(cid:21)(cid:25)(cid:24)(cid:147)(cid:19)(cid:17)(cid:19)(cid:25)(cid:24) C.DIMENSIONSANDTOLERANCESPER (6X) ASMEY14.5M,2009. (cid:20)(cid:17)(cid:19)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) (0.50) 7 8 D.LANDPATTERNRECOMMENDATIONIS (cid:21)(cid:17)(cid:19)(cid:24)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24) EXISTINGINDUSTRYLANDPATTERN. E.DRAWINGFILENAME:MKT-FDMA908Prev1. 6 5 4 F.REFERENCEDRAWINGNO:MKT-MLP06Prev1. (cid:19)(cid:17)(cid:22)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:24)(cid:11)(cid:25)(cid:59)(cid:12) 0.65 0.10 C A B 1.30 0.05 C BOTTOMVIEW

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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