Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J010L DSK5J010L Silicon N-channel Junciton FET Unit: mm For low frequency amplificaton / For pyroelctric sensor DSK2J01 in SMini3 type package 2.0 0.3 0.13  Features 3  High gate-drain Voltage(Source open)VGDO  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1.252.1 1 2  Marking Symbol: B6 0.9  Packaging (0.65)(0.65) Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1.3 1. Source 2. Drain 3. Gate Panasonic SMini3-F2-B JEITA SC-85  Absolute Maximum Ratings Ta = 25 C Code ― Parameter Symbol Rating Unit Gate-drain voltage (Source short) VGDS -55 V Drain current ID 30 mA Internal Connection Gate current IG 10 mA (G) 3 Power dissipation PD 150 mW Channel temperature Tch 150 °C Operating ambient temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +150 °C 1 2 (S) (D)  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Conditions Min Typ Max Unit Gate-drain voltage (Source short) VGDS IG = -100 μA, VDS = 0 -55 V Drain current *1 IDSS VDS = 10 V , VGS = 0 1.0 12.0 mA Gate-source cutoff current IGSS VGS = -30 V, VDS = 0 -10 nA Gate-source cutoff voltage VGSC VDS = 10 V, ID = 10 μA -5 V Forward transfer admittance |Yfs| VDS = 10 V, ID = 5 mA, f =1 kHz 2.5 7.5 mS Small-signal short-circuit input capacitance Ciss 6.0 pF VDS = 10 V, VGS = 0, f = 1 MHz Small-signal reverse transfer capacitance Crss 2.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Rank classification Code P Q R Rank P Q R IDSS (mA) 1.0 to 3.0 2.0 to 6.5 5.0 to 12.0 Marking symbol B6P B6Q B6R Page 1 of 3 Established :2010-10-26 Revised :2014-03-25

Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J010L Technical Data ( reference ) PD-Ta ID-VGS 200 8 VDS = 10V -40 ℃ W)150 6 D (m mA) 25 ℃ ation P100 ent ID ( 4 sip urr s c wer Di 50 Drain 2 Ta = 85 ℃ o P 0 0 0 20 40 60 80 100 120 140 160 180 200 -1.5 -1 -0.5 0 0.5 Temperature Ta (℃) Gate-source voltage VGS (V) ID-VDS |Yfs|-ID 4 100 Ta= 25 ℃ Ta = 25 ℃ VGS= 0 V e 3 nc VDS = 10 V mA) mitta 10 ent ID ( 2 -0.2 V nsfer ads| (mS) ain curr 1 -0.4 V word tra|Yf 1 Dr or F -0.6 V 0 0.1 0 2 4 6 8 10 12 0.01 0.1 1 10 Drain-source voltage VDS (V) Drain current ID (mA) Cx-VDS 12 Ta= 25 ℃ 10 Ciss Coss F) 8 p e C ( 6 c n Crss a 4 cit a p a 2 C 0 0 5 10 15 20 Drain-source voltage VDS (V) Page 2 of 3 Established :2010-10-26 Revised :2014-03-25

Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J010L SMini3-F2-B Unit: mm 2.0±0.2 +0.05 +0.05 0.13-0.02 0.30-0.02 3 0 1 1 . . 0 0 ± ± 5 1 2 . . 2 1 ) ° 5 1 2 ( 0 (0.65) (0.65) 05 . 0 ± 1.3±0.1 5 2 4 . 0 (5°) ) 9 4 9) 0.1 0. 8 ± ( (0. 0.9 1 . 0 o t 0  Land Pattern (Reference) (Unit: mm) 0.9 8 . 0 9 . 1 1.3 Page 3 of 3 Established :2010-10-26 Revised :2014-03-25

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