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2N4416A产品简介:
ICGOO电子元器件商城为您提供2N4416A由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N4416A价格参考。Central Semiconductor2N4416A封装/规格:晶体管 - JFET, JFET N-Channel 35V 300mW Through Hole TO-72。您可以下载2N4416A参考资料、Datasheet数据手册功能说明书,资料中有2N4416A 详细功能的应用电路图电压和使用方法及教程。
2N4416A是由Central Semiconductor Corp生产的一款N沟道结型场效应晶体管(JFET),属于晶体管-JFET类别。该器件具有低噪声、高输入阻抗和良好的热稳定性,适用于对信号保真度要求较高的模拟电路场合。 其典型应用场景包括:音频放大器中的前置放大级,用于提升微弱信号并减少噪声引入;在模拟开关和可变电阻电路中作为电压控制元件;也可用于振荡器、滤波器等信号处理电路中,发挥其线性好、失真低的优势。此外,2N4416A常被应用于测量仪器、通信设备及传感器接口电路中,适合需要高精度和稳定性的电子系统。 由于其最大漏极电流约为10mA,功耗较低,因此更适用于小信号处理而非大功率输出场景。该型号广泛用于工业控制、消费电子和电信领域中的模拟前端设计。总体而言,2N4416A是一款性能稳定的通用型JFET,适合各类对噪声和输入阻抗敏感的低频至中频模拟应用。
| 参数 | 数值 |
| Id-ContinuousDrainCurrent | 15 mA |
| Id-连续漏极电流 | 15 mA |
| 品牌 | Central Semiconductor |
| 产品目录 | 半导体 |
| 描述 | JFET N-Chan JFET |
| 产品分类 | 分离式半导体 |
| 产品手册 | |
| 产品图片 |
|
| rohs | 符合RoHS |
| 产品系列 | 晶体管,JFET,Central Semiconductor 2N4416A |
| 产品型号 | 2N4416A |
| Pd-PowerDissipation | 300 mW |
| Pd-功率耗散 | 300 mW |
| Vds-Drain-SourceBreakdownVoltage | 35 V |
| Vds-漏源极击穿电压 | 35 V |
| Vgs-Gate-SourceBreakdownVoltage | 35 V |
| Vgs-栅源极击穿电压 | 35 V |
| Vgs=0时的漏-源电流 | 5 mA to 15 mA |
| 产品种类 | JFET |
| 功率耗散 | 300 mW |
| 商标 | Central Semiconductor |
| 安装风格 | Through Hole |
| 封装 | Bulk |
| 封装/箱体 | TO-72 |
| 工厂包装数量 | 500 |
| 晶体管极性 | N-Channel |
| 正向跨导-最小值 | 0.0045 S to 0.0075 S |
| 漏极连续电流 | 15 mA |
| 漏源电压VDS | 35 V |
| 系列 | 2N4416 |
| 配置 | Single |
| 闸/源击穿电压 | 35 V |
B14 02/2004 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor • Mixers Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage 2N4416 – 30 V 2N4416A – 35 V • VHF Amplifiers Gate Current 10 mA 10 mA Continuous Device Dissipation 300 mW 300 mW Power Derating 2 mW°C 2 mW/°C At 25°C free air temperature: 2N4416 2N4416A Process NJ26 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V – 30 – 35 V I = – 1µA, V = ØV (BR)GSS G DS – 0.1 – 0.1 nA V = – 20V, V = ØV GS DS Gate Reverse Current I GSS – 0.1 – 0.1 µA V = – 20V, V = ØV T = 150°C GS DS A Gate Source Cutoff Voltage V – 6 – 2.5 – 6 V V = 15V, I = 1 nA GS(OFF) DS D Drain Saturation Current (Pulsed) I 5 15 5 15 mA V = 15V, V = ØV DSS DS GS Dynamic Electrical Characteristics Common Source 4500 7500 4500 7500 µS VDS= 15V, VGS= ØV f = 1 kHz g Forward Transconductance fs 4000 4000 µS V = 15V, V = ØV f = 400 MHz DS GS 50 50 µS V = 15V, V = ØV f = 1 kHz DS GS Common Source g 75 75 µS V = 15V, V = ØV f = 100 MHz Output Conductance os DS GS 100 100 µS V = 15V, V = ØV f = 400 MHz DS GS Common Source Input Capacitance C 4 4 pF V = 15V, V = ØV f = 1 MHz iss DS GS Common Source Output Capacitance C 2 2 pF V = 15V, V = ØV f = 1 MHz oss DS GS Common Source C 0.8 0.8 pF V = 15V, V = ØV f = 1 MHz Reverse Transfer Capacitance rss DS GS Common Source 100 100 µS VDS= 15V, VGS= ØV f = 100 MHz g Input Conductance is 1000 1000 µS V = 15V, V = ØV f = 400 MHz DS GS Common Source 2500 2500 µS VDS= 15V, VGS= ØV f = 100 MHz b Input Susceptance is 10000 10000 µS V = 15V, V = ØV f = 400 MHz DS GS Common Source 1000 1000 µS VDS= 15V, VGS= ØV f = 100 MHz b Output Susceptance os 4000 4000 µS V = 15V, V = ØV f = 400 MHz DS GS Common Source 18 18 dB VDS= 15V, ID= 5mA f = 100 MHz G Power Gain ps 10 10 dB V = 15V, I = 5mA f = 400 MHz DS D 2 2 dB V = 15V, I = 5mA f = 100 MHz Noise Figure NF DS D 4 4 dB RG= 1kW f = 400 MHz Note: rf parameters guaranteed, but not 100% tested. TO–72 Package Surface Mount See Section G for Outline Dimensions SMP4416, SMP4416A Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case 715 N. Glenville Dr., Richardson, TX 75081 www.interfet.com (972) 238-1287 Fax (972) 238-5338
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