AON7404 20V N-Channel MOSFET General Description Product Summary The AON7404 combines advanced trench MOSFET VDS 20V technology with a low resistance package to provide I (at V =4.5V) 20A D GS extremely low RDS(ON). This device is ideal for load switch R (at V =4.5V) < 6mW DS(ON) GS and battery protection applications. R (at V =2.5V) < 7.5mW DS(ON) GS 100% UIS Tested 100% R Tested g DFN 3x3_EP D Top View Bottom View Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS Gate-Source Voltage V ±12 V GS Continuous Drain TC=25°C I 40 Current G T =100°C D 31 A C Pulsed Drain Current C I 160 DM Continuous Drain TA=25°C I 20 A Current T =70°C DSM 16 A Avalanche Current C I , I 57 A AS AR Avalanche energy L=0.1mH C E , E 162 mJ AS AR T =25°C 40 C P W Power Dissipation B T =100°C D 16 C T =25°C 3.1 A P W Power Dissipation A T =70°C DSM 2 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 60 75 °C/W Maximum Junction-to-Case Steady-State RqJC 2.6 3.1 °C/W Rev 2: Mar. 2011 www.aosmd.com Page 1 of 6

AON7404 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 20 V DSS D GS V =20V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V = ±12V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 0.5 1 1.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 160 A D(ON) GS DS V =4.5V, I =20A 4.9 6 GS D mW R Static Drain-Source On-Resistance T=125°C 6.2 7.4 DS(ON) J V =2.5V, I =18A 5.8 7.5 mW GS D g Forward Transconductance V =5V, I =20A 105 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.6 1 V SD S GS I Maximum Body-Diode Continuous Current G 40 A S DYNAMIC PARAMETERS C Input Capacitance 3080 3860 4630 pF iss C Output Capacitance V =0V, V =10V, f=1MHz 520 740 960 pF oss GS DS C Reverse Transfer Capacitance 350 580 810 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.6 1.4 2.1 W g GS DS SWITCHING PARAMETERS Q (4.5V) Total Gate Charge 28 36 43 nC g Q Gate Source Charge V =10V, V =10V, I =20A 7 9 11 nC gs GS DS D Q Gate Drain Charge 7 12 17 nC gd t Turn-On DelayTime 7 ns D(on) t Turn-On Rise Time V =10V, V =10V, R =0.56W , 8 ns r GS DS L t Turn-Off DelayTime R =3W 70 ns D(off) GEN t Turn-Off Fall Time 18 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 13 17 20 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 29 36 43 nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C.Maximum avalanche current limited by tester capability. J D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Mar. 2011 www.aosmd.com Page 2 of 6

AON7404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 4.5V 2.5V VDS=5V 80 2V 60 60 I (A)D I(A)D40 40 125°C 25°C 20 20 V =1.5V GS 0 0 0 1 2 3 4 5 0.5 1 1.5 2 2.5 VDS (Volts) VGS(Volts) Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 10 1.4 V =4.5V GS e 8 V =2.5V nc ID=20A GS a ) sist 1.2 WWWWm 6 Re 17 (N) On- 5 DS(O 4 ed VGS=2.5V2 R VGS=4.5V maliz 1 ID=16A10 2 or N 0 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 ID (A) Temperature (°C) 0 Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Te1m8perature Voltage (Note E) (Note E) 10 1.0E+02 I =20A D 1.0E+01 9 40 1.0E+00 8 ) WWWWm A) 1.0E-01 (DS(ON) 7 125°C I (S 1.0E-02 125°C 25°C R 6 1.0E-03 5 1.0E-04 25°C 4 1.0E-05 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev 2: Mar. 2011 www.aosmd.com Page 3 of 6

AON7404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 V =10V DS I =20A 6000 8 D F) 5000 Ciss olts) 6 ce (p 4000 V n V (GS 4 acita 3000 p a 2 C 2000 Coss 1000 0 Crss 0 20 40 60 80 100 0 0 5 10 15 20 Q (nC) g Figure 7: Gate-Charge Characteristics VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 200 100.0 RDS(ON) 10m s 10m s 160 TJ(Max)=150°C limited 100m s TC=25°C s) 10.0 W) 120 17 Amp DC 110mmss wer ( 5 I (D 1.0 Po 80 2 10 T =150°C J(Max) 0.1 40 T =25°C C 0.0 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 VDS (Volts) Pulse Width (s) 0 Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating J1u8nction-to- Operating Area (Note F) Case (Note F) 10 D=Ton/T In descending order nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsi nce RqJC=3.1°C/W 40 Tra sta 1 d si e e z R mali mal Nor her 0.1 PD CT ZqqqqJ Single Pulse T on T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Mar. 2011 www.aosmd.com Page 4 of 6

AON7404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000.0 50 nt e urr W)40 e C TA=25°C n ( h o Peak Avalanc 100.0 TA=150°C TA=100°C wer Dissipati2300 A) Po10 (R TA=125°C A I 10.0 0 1 10 100 1000 0 25 50 75 100 125 150 Time in avalanche, tA m(mmm s) TCASE (°C) Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F) (Note C) 50 10000 T =25°C A 40 1000 A) g I(D 30 W) 17 atin er ( 100 5 ent r 20 Pow 120 urr C 10 10 0 1 0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000 TCASE (°C) Pulse Width (s) 18 Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to- Ambient (Note H) 10 D=Ton/T In descending order ent TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsi nce 1 RqJA=75°C/W 40 Tra sta d si e e z R 0.1 mali mal NorATher 0.01 PD J Single Pulse Zqqqq T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2: Mar. 2011 www.aosmd.com Page 5 of 6

AON7404 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 2: Mar. 2011 www.aosmd.com Page 6 of 6