AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description Product Summary The AOT240L & AOB240L & AOTF240L uses Trench VDS 40V MOSFET technology that is uniquely optimized to provide I (at V =10V) 105A/85A D GS the most efficient high frequency switching performance. R (at V =10V) < 2.9mW (< 2.6mW *) DS(ON) GS Power losses are minimized due to an extremely low R (at V =4.5V) < 3.7mW (< 3.5mW *) combination of R and Crss. DS(ON) GS DS(ON) 100% UIS Tested 100% R Tested g Top View TO-263 D TO-220 TO-220F D2PAK D G D S D S S S AOT240L G AOTF240L G AOB240L G Orderable Part Number Package Type Form Minimum Order Quantity AOT240L TO-220 Tube 1000 AOB240L TO-263 Tape & Reel 800 AOTF240L TO-220F Tube 1000 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol AOT240L/AOB240L AOTF240L Units Drain-Source Voltage V 40 V DS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I 105 85 Current G T =100°C D 82 60 A C Pulsed Drain Current C I 400 DM Continuous Drain TA=25°C I 20 A Current T =70°C DSM 16 A Avalanche Current C I 68 A AS Avalanche energy L=0.1mH C E 231 mJ AS T =25°C 176 41 C P W Power Dissipation B T =100°C D 88 20 C T =25°C 1.9 A P W Power Dissipation A T =70°C DSM 1.2 A Junction and Storage Temperature Range T, T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol AOT240L/AOB240L AOTF240L Units Maximum Junction-to-Ambient A t ≤ 10s 15 15 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 65 65 °C/W Maximum Junction-to-Case Steady-State RqJC 0.85 3.6 °C/W * Surface mount package TO263 Rev.3.0: November 2013 www.aosmd.com Page 1 of 7

AOT240L/AOB240L/AOTF240L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 40 V DSS D GS V =40V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V =±20V ±100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1 1.7 2.2 V GS(th) DS GS，D I On state drain current V =10V, V =5V 400 A D(ON) GS DS V =10V, I =20A 2.4 2.9 GS D mW TO220/TO220F T=125°C 3.7 4.7 J V =4.5V, I =20A GS D 3 3.7 mW TO220/TO220F R Static Drain-Source On-Resistance DS(ON) V =10V, I =20A GS D 2.1 2.6 mW TO263 V =4.5V, I =20A GS D 2.7 3.5 mW TO263 g Forward Transconductance V =5V, I =20A 78 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.65 1 V SD S GS I Maximum Body-Diode Continuous Current G 105 A S DYNAMIC PARAMETERS C Input Capacitance 3510 pF iss C Output Capacitance V =0V, V =20V, f=1MHz 1070 pF oss GS DS C Reverse Transfer Capacitance 68 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1 1.5 W g GS DS SWITCHING PARAMETERS QQ ((1100VV)) TToottaall GGaattee CChhaarrggee 4499 7722 nnCC g Q (4.5V) Total Gate Charge 22 32 nC g V =10V, V =20V, I =20A GS DS D Q Gate Source Charge 9 nC gs Q Gate Drain Charge 7 nC gd t Turn-On DelayTime 11 ns D(on) t Turn-On Rise Time V =10V, V =20V, R =1W , 10 ns r GS DS L t Turn-Off DelayTime R =3W 38 ns D(off) GEN t Turn-Off Fall Time 11 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 21 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 58 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C. J D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: November 2013 www.aosmd.com Page 2 of 7

AOT240L/AOB240L/AOTF240L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3.5V V =5V DS 7V 3V 80 80 10V 60 60 A) A) I(D 40 I(D 40 125°C 20 20 25°C Vgs=2.5V 0 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 Fig 1: On-RegioVnD CSh(Vaoraltcst)eristics (Note E) Figure 2: TransfeVrG CS(hVaorlatsc)teristics (Note E) 8 2 6 ance 1.8 VIG=S2=01A0V ) esist 1.6 D WWWWm R 17 (N) 4 VGS=4.5V On- 1.4 5 RDS(O alized 1.2 VGS=4.5V120 2 m I =20A VGS=10V Nor 1 D 0 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 Figure 3: On-ResistanceID v(sA.) Drain Current and Gate Temperature (°C) 0 Voltage (Note E) Figure 4: On-Resistance vs. Junctio1n8 Temperature ((NNoottee EE)) 8 1.0E+02 I =20A D 1.0E+01 6 40 1.0E+00 125°C ) 125°C WWWWm A) 1.0E-01 (ON) 4 I(S 1.0E-02 DS( 25°C R 1.0E-03 2 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5: On-ResistVanGSce(V vosl.t sG)ate-Source Voltage Figure 6: Body-DioVdSDe (CVhoaltrsa)cteristics (Note E) (Note E) Rev.3.0: November 2013 www.aosmd.com Page 3 of 7

AOT240L/AOB240L/AOTF240L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 V =20V DS I =20A D 8 4000 C iss F) p V(Volts)GS 46 pacitance ( 23000000 Coss a C 2 1000 C rss 0 0 0 10 20 30 40 50 0 10 20 30 40 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 600 T =175°C 10m s TJ(=M2ax5)°C 100.0 RDS(ON) 10m s 500 C limited 100m s s) 10.0 1ms W) 400 17 Amp DC 10ms er ( 5 I(D 1.0 TJ(Max)=175°C Pow 300 2 T =25°C 10 C 0.1 200 0.0 100 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 V (Volts) 0 DS Pulse Width (s) Figure 9: Maximum Forward Biased Safe Operating 18 Figure 10: Single Pulse Power Rating Junction-to-Case AArreeaa ffoorr AAOOTT224400LL aanndd AAOOBB224400LL ((NNoottee FF)) for AOT240L and AOB240L (Note F) 10 D=T /T In descending order on nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e Transistance 1 RqJC=0.85°C/W 40 d si ee zR malimal Norher 0.1 PD JCT Single Pulse Zqqqq T on T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT240L and AOB240L (Note F) Rev.3.0: November 2013 www.aosmd.com Page 4 of 7

AOT240L/AOB240L/AOTF240L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000.0 600 T =175°C 100.0 RDS(ON) 1100m0sm s 500 TJC(=M2ax5)°C 400 s) 10.0 1ms W) Amp 10ms er ( 300 I(D 1.0 TTJ(=M2ax5)=°17C5°C DC Pow 200 C 0.1 100 0.0 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 V (Volts) DS Pulse Width (s) 17 Figure 12: Maximum Forward Biased Figure 13: Single Pulse Power Rating Jun5ction-to-Case Safe Operating Area for AOTF240L for AOTF240L (Note F) 2 10 10 D=T /T In descending order on nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince RqJC=3.6°C/W d Trasista 1 0 zeRe 18 malimal NorJCTher 0.1 PD Zqqqq Single Pulse T on T 0.01 40 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 PPuullssee WWiiddtthh ((ss)) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF240L (Note F) Rev.3.0: November 2013 www.aosmd.com Page 5 of 7

AOT240L/AOB240L/AOTF240L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 200 nt e Curr W) 150 k Avalanche 100 TTAA==12550°°CC TA=100°C Dissipation ( 100 ea er P w A) TA=125°C Po 50 (R A I 10 0 1 10 100 1000 0 25 50 75 100 125 150 175 Figure 15:T Simineg ilne aPvualslaen Acvhael,a tnAcm(hmmm es )capability Figure 16: PoTwCAeSrE D(°°°°e-Cra)ting (Note F) (Note C) 120 1000 T =25°C A 100 A) (D 80 100 17 g I W) urrent ratin 4600 Power ( 10 1520 C 20 0 1 0 25 50 75 100 125 150 175 1E-05 0.001 0.1 100 1000 TCASE(°°°°C) Pulse Width (s) 18 FFiigguurree 1177:: CCuurrrreenntt DDee--rraattiinngg ((NNoottee FF)) FFiigguurree 1188:: SSiinnggllee PPuullssee PPoowweerr RRaattiinngg JJuunnccttiioonn--ttoo-- Ambient (Note H) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e Transistance 1 RqJA=65°C/W 40 d si ee malizmal R 0.1 NorATher 0.01 PD J Zqqqq Single Pulse T on T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: November 2013 www.aosmd.com Page 6 of 7

AOT240L/AOB240L/AOTF240L Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds ++ Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev.3.0: November 2013 www.aosmd.com Page 7 of 7