This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3030 Silicon N-channel power MOSFET ■ Features Unit: mm •Avalanche energy capability guaranteed / 65..53±±00..11 2.3±0.1 •High-speed switching e 4.35±0.1 0.5±0.1 •Low ON resistance R on ••NLoow s-evcoolntadgaery d brirveeakdown c 7.3±0.1 1.8±0.1 ax. ■••HNAiogpnhp- celoilcenactattrcioot snrteasltaicy energy capability an e2.5±0.1 d1 2 3 2.300.8 m±.70.51±10..001±.100.±1.05.0±(5g05..13e).1.0±0.2 •Solenoid drive 4.6±0.1 a(4.35) ••MCoonttorro dl reiqvueipment n u cle st(3.0) (1.8) •Switching mode regulator n 1 2 c3y 5.5) e ( ■ Absolute Maximum Ratiengs TC = 25°C 1: Gate ct lif i u Parameter Symbol Rating Unit 2: Draind t t 3: Souorce Drain-source surrender voltage V 100 V r Gate-source surrendern voltage VDGSSSS n±20 V urE IAPJ: SC-63 U-G1 Package Drain current I ±8 A oMarking Symbol: K3030 ■NDDGGPAPCSotoethEvarraMeoaaawttaa)rekeiilnlaenne- *a ngtdrs--nh:c osseerdcrLooa luteiht riuu sretsne=iecsrrmahc ccm ieeco0paee pnuc.lpa ei1dPlecrsute rr ui rutCrmaaeovgoratDtnrnooryfuHthaetuflf rt ncmf,raeiac aedIcguerLpeuera tarr=re bercv reni8otlnt ielAtsttyTra, i nga*s1 ec= tpi ecu2/l5scs°De iC TsCc o=SETTIPon AyVDtIIsD2cDVitmDGPhgSD5SStnShbSS°SuoCle− ±d5 5IVVV i3D p±1DGDnt3 l1°o=152SSS.cC52 a l04+===1n1u m18±5ed0020A d0eVV p, l sV,,V mamfIV,CG DaVmna°°oWSGiA iolCC= lSDeJ=nnn St=1 otdd 0 =eime0tw diin0doinAinnasasosgncnc wfcocioenenn tI ttintgi yntyneepuUpurenemeeRiaddLc l t toCayynob.GppnM11opee0n.iua0dn0et nclataitsoTneoysnpti ic.ncfDSMoo±2.1rj1.a050pxm/aetin/oUµµnVVn.AAit FDorarwina-rsdo utrracnes OfeNr ardemsinsittttaeannncceae RDYS(fosn)1 VVDGSS == 1100 VV,, IIDD s==it 44 f AAollww.s 2 0.415 0.23 ΩS Diode forward voMlatiage RVDSD(SoFn)2 VIDGRS = = 8 4 A Vs, ,eV IDGvi S= = 4 0 Ap://w 0.18 −0.12.64 V Short-circuit forward transfer capacitance Ciss VDS =e 1a0 V, VGhtSt = 0, f = 1 MHz 290 pF (Common source) Pl Short-circuit output capacitance C 110 pF oss (Common source) Reverse transfer capacitance Crss 30 pF (Common source) Turn-on delay time t V = 30 V, I = 4 A, R = 7.5 Ω 15 ns d(on) DD D L Rise time t V = 10 V 40 ns r GS Fall time t 200 ns f Turn-off delay time t 860 ns d(off) Thermal resistance (ch-c) R 8.33 °C/W th(ch-c) Thermal resistance (ch-a) R 125 °C/W th(ch-a) Note)Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2004 SJG00013BED 1

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl