2N5460 2N5461 2N5462 www.centralsemi.com The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, SILICON and 2N5462 are silicon P-Channel JFETs designed for P-CHANNEL JFETS low level amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Gate Voltage VDG 40 V Reverse Gate-Source Voltage VGSR 40 V Continuous Gate Current IG 10 mA Power Dissipation PD 310 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5460 2N5461 2N5462 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS IGSS VGS=20V - 5.0 - 5.0 - 5.0 nA IGSS VGS=20V, TA=100°C - 1.0 - 1.0 - 1.0 μA IDSS VDS=15V, f=1.0kHz 1.0 5.0 2.0 9.0 4.0 16 mA BVGSS IG=10μA 40 - 40 - 40 - V VGS VDS=15V, ID=0.1mA 0.5 4.0 - - - - V VGS VDS=15V, ID=0.2mA - - 0.8 4.5 - - V VGS VDS=15V, ID=0.4mA - - - - 1.5 6.0 V VGS(OFF) VDS=15V, ID=1.0μA 0.75 6.0 1.0 7.5 1.8 9.0 V |yfs| VDS=15V, VGS=0, f=1.0kHz 1.0K 4.0K 1.5K 5.0K 2.0K 6.0K μS |yos| VDS=15V, VGS=0, f=1.0kHz - 75 - 75 - 75 μS Crss VDS=15V, VGS=0, f=1.0MHz - 2.0 - 2.0 - 2.0 pF Ciss VDS=15V, VGS=0, f=1.0MHz - 7.0 - 7.0 - 7.0 pF eN VDS=15V, VGS=0, f=100Hz, BW=1.0Hz - 115 - 115 - 115 nV/ Hz NF VDS=15V, VGS=0, f=100Hz, RG=1.0MΩ, BW=1.0Hz - 2.5 - 2.5 - 2.5 dB R1 (25-January 2016)

2N5460 2N5461 2N5462 SILICON P-CHANNEL JFETS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Drain 2) Source 3) Gate MARKING: FULL PART NUMBER R1 (25-January 2016) www.centralsemi.com

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