NTD5867NL N-Channel Power MOSFET 60 V, 20 A, 39 m(cid:2) Features • Low R DS(on) • High Current Capability • http://onsemi.com 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 39 m(cid:4) @ 10 V 20 A 60 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 50 m(cid:4) @ 4.5 V 18 A Parameter Symbol Value Unit D Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage VGS ±30 V N−Channel − Non−Repetitive (tp < 10 (cid:2)s) G Continuous Drain TC = 25°C ID 20 A Current (R(cid:3)JC) Steady TC = 100°C 13 S Power Dissipation State TC = 25°C PD 36 W 4 (R(cid:3)JC) Pulsed Drain Current tp = 10 (cid:2)s IDM 76 A 4 Operating Junction and Storage Temperature TJ, Tstg −15550 to °C 1 2 12 3 3 Source Current (Body Diode) IS 20 A DPAK IPAK Single Pulse Drain−to−Source Avalanche EAS 18 mJ CASE 369AA CASE 369D Energy (VDD = 50 V, VGS = 10 V, RG = 25 (cid:4), (Surface Mount) (Straight Lead) IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) STYLE 2 STYLE 2 L(1e/a8d″ fTreommp cearsaetu froer f1o0r Ss)oldering Purposes TL 260 °C MARKING DIAGRAMS & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 4 Drain assumed, damage may occur and reliability may be affected. 4 W G THERMAL RESISTANCE MAXIMUM RATINGS Drain W NL Y87 Parameter Symbol Value Unit A56 W G Junction−to−Case (Drain) R(cid:3)JC 3.5 °C/W W NL Y87 Junction−to−Ambient − Steady State (Note 1) R(cid:3)JA 45 A56 1. Surface−mounted on FR4 board using 1 in sq pad size 2 (Cu area = 1.127 in sq [2 oz] including traces. 1Drain 3 1 2 3 Gate Source GateDrainSource A = Assembly Location* Y = Year WW = Work Week 5867NL= Device Code G = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2014 − Rev. 3 NTD5867NL/D

NTD5867NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 (cid:2)A 60 V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 60 mV/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0 (cid:2)A VDS = 60 V TJ = 125°C 100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 (cid:2)A 1.5 1.8 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.2 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 10 A 26 39 m(cid:4) VGS = 4.5 V, ID = 10 A 33 50 Forward Transconductance gFS VDS = 15 V, ID = 10 A 8.0 S CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss 675 pF Output Capacitance Coss VGS =V 0D VS, =f =2 51 .V0 MHz, 68 Reverse Transfer Capacitance Crss 47 Total Gate Charge QG(TOT) 15 nC Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 48 V, 1.0 Gate−to−Source Charge QGS ID = 20 A 2.2 Gate−to−Drain Charge QGD 4.3 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, 7.6 nC ID = 20 A Gate Resistance RG 1.3 (cid:4) SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(on) 6.5 ns Rise Time tr VGS = 10 V, VDD = 48 V, 12.6 Turn−Off Delay Time td(off) ID = 20 A, RG = 2.5 (cid:4) 18.2 Fall Time tf 2.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.87 1.2 V IS = 10 A TJ = 100°C 0.78 Reverse Recovery Time tRR 17 ns Charge Time ta VGS = 0 V, dIs/dt = 100 A/(cid:2)s, 13 Discharge Time tb IS = 20 A 4.0 Reverse Recovery Charge QRR 12 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 (cid:2)s, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2

NTD5867NL TYPICAL PERFORMANCE CURVES 40 40 10V 4.5 V TJ = 25°C VDS ≥ 10 V 35 35 S) 4 V S) P P M 30 M 30 A 3.8 V A T ( 25 T ( 25 N N E 3.6 V E R R R 20 R 20 U U C 3.4 V C AIN 15 3.2 V AIN 15 TJ = 125°C R 10 R 10 , DD 3.0 V , DD TJ = 25°C I 5 I 5 2.8 V TJ = −55°C 0 0 0 1 2 3 4 5 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:4)) (cid:4)) E (0.060 E ( 0.040 ANC ID = 20 A ANC TJ = 25°C ST TJ = 25°C ST ESI0.050 ESI 0.035 VGS = 4.5 V R R E E C C R R OU0.040 OU 0.030 S S − − TO TO VGS = 10 V − − N0.030 N 0.025 AI AI R R D D , DS(on)0.0203 4 5 6 7 8 9 10, DS(on)0.0205 10 15 20 R R VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and Voltage Gate Voltage 2.2 10000 E TANC 2.0 IVDG =S 2=0 1 A0 V VGS = 0 V ESIS 1.8 A) TJ = 150°C R n1000 N−TO−SOURCE (NORMALIZED) 1111....0246 I, LEAKAGE (DSS 100 TJ = 125°C AI R 0.8 D , on) 0.6 10 S( −50 −25 0 25 50 75 100 125 150 10 20 30 40 50 60 D R TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature vs. Drain Voltage http://onsemi.com 3

NTD5867NL TYPICAL PERFORMANCE CURVES 1000 10 900 VTGJ S= =2 50° VC OLTS) QT 800 V 8 F) E ( CE (p 760000 Ciss LTAG 6 VGS N O A V APACIT 450000 URCE 4 Qgs Qgd C 300 O C, −S 120000 Coss E−TO 2 VIDD =S 2=0 4 A8 V Crss AT TJ = 25°C 0 G 0 0 10 20 30 40 50 60 , S 0 5 10 15 DRAIN−TO−SOURCE VOLTAGE (VOLTS) VG QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−To−Source Voltage vs. Total Charge 1000 20 VDD = 48 V VGS = 0 V IVDG =S 2=0 1 A0 V MPS) TJ = 25°C A 15 100 T ( s) tf td(off) EN ME (n tr URR 10 t, TI 10 td(on) RCE C OU 5 S , S I 1 0 1 10 100 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (OHMS) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current Variation vs. Gate Resistance 100 20 E PS) 10 (cid:2)s URC ID = 20 A M O RRENT (A 10 110 m0 s(cid:2)s AIN−TO−SERGY (mJ) 15 U RN 10 N C VGS = 10 V 10 ms E DE E DRAI 1 STCIN =G 2L5E° CPULSE dc PULSNCH I, D RTHDSE(RonM) ALILM LITIMIT GLE VALA 5 NA PACKAGE LIMIT SI 0.11 10 100 S, 025 50 75 100 125 150 A VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) E TJ, JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs. Safe Operating Area Starting Junction Temperature http://onsemi.com 4

NTD5867NL TYPICAL PERFORMANCE CURVES E C N TA 10 S SI E R L A THERMLIZED) 1.0 D = 0.5 NT MA 0.2 P(pk) SIENOR 0.1 00..015 RD (cid:3)CJCU(Rt) V=E rS(t )A RP(cid:3)PJCLY FOR POWER AN( 0.02 PULSE TRAIN SHOWN R T t1 READ TIME AT t1 VE 0.01 t2 TJ(pk) − TC = P(pk) R(cid:3)JC(t) TI SINGLE PULSE DUTY CYCLE, D = t1/t2 C 0.01 FE 0.000001 0.00001 0.0001 0.001 0.01 0.1 F E t, TIME (s) r(t), Figure 13. Thermal Response ORDERING INFORMATION Order Number Package Shipping† NTD5867NL−1G IPAK (Straight Lead) 75 Units / Rail (Pb−Free) NTD5867NLT4G DPAK 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5

NTD5867NL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA ISSUE B NOTES: C 1.DIMENSIONING AND TOLERANCING PER ASME A Y14.5M, 1994. E A 2.CONTROLLING DIMENSION: INCHES. 3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. b3 B c2 4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. L3 4 D Z 5.DOIUMTEENRSMIOONSST DE XATNRDE ME EASR EO FD ETTHEER PMLIANSETDIC A TB OTHDEY. H 6.DATUMS A AND B ARE DETERMINED AT DATUM 1 2 3 DETAIL A PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX L4 A 0.086 0.094 2.18 2.38 b2 A1 0.000 0.005 0.00 0.13 b c b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 L2 GPLAAUNGEE C SPELAATNIENG cD2 00..203158 00..204254 50..9476 60..2621 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC L H 0.370 0.410 9.40 10.41 A1 L 0.055 0.070 1.40 1.78 L1 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC DETAIL A L3 0.035 0.050 0.89 1.27 ROTATED 90(cid:2) CW L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− SOLDERING FOOTPRINT* STYLE 2: PIN 1. GATE 6.20 3.0 2. DRAIN 3. SOURCE 0.244 0.118 4. DRAIN 2.58 0.101 5.80 1.6 6.172 0.228 0.063 0.243 (cid:2) (cid:3) mm SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6

NTD5867NL PACKAGE DIMENSIONS IPAK (STRAIGHT LEAD DPAK) CASE 369D ISSUE C B C NOTES: 1. DIMENSIONING AND TOLERANCING PER V R E ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS 4 Z DIM MIN MAX MIN MAX A 0.235 0.245 5.97 6.35 A S B 0.250 0.265 6.35 6.73 1 2 3 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 −T− F 0.037 0.045 0.94 1.14 SEATING G 0.090 BSC 2.29 BSC PLANE K H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 F J S 0.025 0.040 0.63 1.01 H V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− D 3 PL STYLE 2: G 0.13 (0.005) M T PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com NTD5867NL/D 7