Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF MTMC8E2A0LBF Gate Resistor installed Dual N-Channel MOS Typ Unit: mm 2.9 For lithium-ion secondary battery protection circuit 0.3 0.16 8 7 6 5  Features  Low drain-source On-state Resistance .4.8 22 RDS(on) typ. = 15 m (VGS =4.5 V)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 3 4 (0.81) 0.65  Marking Symbol: 4B 1. Source 5. Drain 2. Gate 6. Drain  Packaging 3. Source 7. Drain Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 4. Gate 8. Drain Panasonic WMini8-F1 JEITA SC-115 Code ―  Absolute Maximum Ratings Ta = 25 C Internal Connection Parameter Symbol Rating Unit Drain-source Voltage VDS 20 V (D) (D) (D) (D) FET1 Gate-source Voltage VGS 12 V 8 7 6 5 FET2 Drain current ID 7.0 A Peak drain current IDp 42 A FET 1 FET 2 PD1 *1 1.0 Rg Rg Total power dissipation PD2 *1,2 1.2 W PD3 *3 0.4 Overall Channel temperature Tch 150 °C Operating ambient temperature Topr -40 to + 85 °C 1 2 3 4 Storage temperature Tstg -55 to +150 °C (S1) (G1) (S2) (G2) Note) *1 Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm Copper foil of the drain portion should have a area of 300 mm2or more PD absolute maximum rating without a heat shink: 400 mW Pin Name *2 t = 10 s 1. Source 5. Drain *3 Stand-alone (without the board) 2. Gate 6. Drain 3. Source 7. Drain 4. Gate 8. Drain Resistance Rg 1 k Value Page 1 of 6 Established :2010-01-06 Revised :2013-09-02

Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF  Electrical Characteristics Ta = 25C  3C Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = 1.0 mA, VGS = 0 20 V Drain-source cutoff current IDSS VDS = 20 V, VGS = 0 1.0 μA Gate-source cutoff current IGSS VGS = 8.0 V, VDS = 0 10 μA Gate threshold voltage Vth ID = 1.0 mA, VDS = 10 V 0.40 0.85 1.30 V RDS(ON)1 ID = 2.0 A, VGS = 4.5 V 15 21 m Drain-source ON resistance RDS(ON)2 ID = 2.0 A, VGS = 3.7 V 18 25 m RDS(ON)3 ID = 2.0 A, VGS = 2.5 V 22 33 m Forward transfer admittance |Yfs| ID = 1.0 A, VDS = 10 V 3.0 S Short-circuit input capacitance (Common source) Ciss 1450 pF Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0, f = 1 MHz 100 pF Reverse transfer capacitance (Common source) Crss 90 pF Turn-on delay time *1 td(on) VDD = 10 V, VGS = 0 V to 4 V 0.33 μs Rise time *1 tr ID = 1.0 A 0.70 μs Turn-off delay time *1 td(off) VDD = 10 V, VGS = 4 V to 0 V 4.0 μs Fall time *1 tf ID = 1.0 A 2.0 μs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2 of 6 Established :2010-01-06 Revised :2013-09-02

Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 3 of 6 Established :2010-01-06 Revised :2013-09-02

Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF Technical Data ( reference ) ID - VDS ID - VGS 6 10 5 VGS = 4.5 V A) 8 Current ID ( 34 2.0 V 2.53 .V7 V current ID (A) 46 25T a℃ = 85℃ n 2 n Drai Drai -40 ℃ 1 2 1.5 V 0 0 0 0.1 0.2 0.3 0 0.5 1 1.5 2 2.5 Drain-source Voltage VDS (V) Gate-source voltage VGS (V) VDS - VGS RDS(on) - ID 0.3 100 V) ce VDS ( 0.25 esistan 2.5 V ain-source Voltage 00..0001..5512 ID = 42..00AA n-source On-state RRDS(on) (m) 10 VGS = 4.5 V 3.7 V Dr 1.0A Drai 0 1 0 2 4 6 8 1 10 Gate-source Voltage VGS (V) Drain Current ID (A) Page 4 of 6 Established :2010-01-06 Revised :2013-09-02

Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF Technical Data ( reference ) Vth - Ta RDS(on) - Ta V) 2 40 h ( Vt e ce ag 1.5 an 30 Volt sistΩ) VGS = 2.5 V 3.7 V Threshold 1 urce On-reDS(on) (m 20 4.5 V ource 0.5 ain-soR 10 e-s Dr at G 0 0 -50 0 50 100 150 -50 0 50 100 150 Temperature (℃) Temperature(℃) PD - Ta 2 ) W ( D P 1.5 n o ati p si 1 s Di r e w o 0.5 P al ot T 0 0 50 100 150 Temperature Ta (C) Rth - tsw Safe Operating Area 1000 1000 ) W IDp = 42 A C/ h ( (A) 100 Rt 100 D ce nt I 10 an re 1 ms st ur si C 1 10 ms mal Re 10 Drain 0.1 Ta = 25 °COi,s Gpliemlaraistetsio den pb ioyn x RtyhD bisSo a(aorrenda) 110 s0 ms er (25.4  25.4  t0.8 mm)coated with copper foil, Th 1 0.01 which has more than 300 mm2. DC 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 Pulse Width tsw (s) Drain-source Voltage VDS (V) Page 5 of 6 Established :2010-01-06 Revised :2013-09-02

Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF WMini8-F1 Unit : mm 2.9±0.1 +0.10 +0.10 0.16-0.05 0.30-0.05 8 7 6 5 1 1 . . 0 0 ± ± 4 8 . . 2 2 ) ° 1 2 3 4 5 ( ) 2 . 0.65 0 ( 5 0 . 0 ± (5°) 0 8 ) . 5 0 1 . 0 ( 2 0 . 0 o t 0  Land Pattern (Reference) (Unit : mm) 0.65 0.65 0.65 4 . 2 5 6 . 0 0.4 Page 6 of 6 Established :2010-01-06 Revised :2013-09-02

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