STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET Features V Type DSS R max I (@T ) DS(on) D JMAX 3 2 STF5NK100Z 1000 V < 3.7 Ω 3.5 A 1 TO-220 TO-220FP STP5NK100Z 1000 V < 3.7 Ω 3.5 A STW5NK100Z 1000 V < 3.7 Ω 3.5 A ■ Extremely high dv/dt capability ■ 100% avalanche tested 3 2 ■ Gate charge minimized 1 ■ Very low intrinsic capacitances TO-247 ■ Very good manufacturing repeatibility Applications ■ Switching application Figure 1. Internal schematic diagram D(2) Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established strip- G(1) based PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the S(3) revolutionary MDmesh™ products. AM01476v1 T able 1. Device summary Order code Marking Package Packaging STF5NK100Z F5NK100Z TO-220FP Tube STP5NK100Z P5NK100Z TO-220 Tube STW5NK100Z W5NK100Z TO-247 Tube May 2009 Doc ID 10850 Rev 5 1/15 www.st.com 15

Contents STP5NK100Z, STF5NK100Z, STW5NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 10850 Rev 5

STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, TO-247 TO-220FP V Drain-source voltage (V = 0) 1000 V DS GS V Gate-source voltage ± 30 V GS ID Drain current (continuous) at TC = 25°C 3.5 3.5 (1) A ID Drain current (continuous) at TC=100°C 2.2 2.2 (1) A IDM(2) Drain current (pulsed) 14 14 (1) A P Total dissipation at T = 25°C 125 30 W TOT C Derating factor 1 0.24 W/°C Gate source ESD V 4000 V ESD(G-S) (HBM-C=100pF, R=1.5 kΩ) dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t=1 s; Tc= 25°C) TJ Operating junction temperature -55 to 150 °C T Storage temperature stg 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. I ≤ 3.5 A, di/dt ≤ 200 A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX. Table 3. Thermal data Value Symbol Parameter Unit TO-220, TO-247 TO-220FP R Thermal resistance junction-case max 1 4.2 °C/W thj-case R Thermal resistance junction-ambient max 62.5 °C/W thj-a Maximum lead temperature for soldering T 300 °C l purpose Table 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 3.5 A AR (pulse width limited by T ) JMAX Single pulse avalanche energy E 250 mJ AS (starting T=25 °C, Id=Iar, Vdd=50 V) j Doc ID 10850 Rev 5 3/15

Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 1 mA, V = 0 1000 V (BR)DSS voltage D GS V = Max rating, Zero gate voltage drain DS 1 µA I V = Max rating, DSS current (VGS = 0) DS 50 µA Tc = 125 °C Gate body leakage current IGSS (V = 0) VGS = ± 20 V ±10 µA GS V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 1.75 A 2.7 3.7 Ω DS(on) resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V =15 V, I = 1.75 A - 4 S fs DS D Input capacitance C 1154 pF iss Output capacitance V =25 V, f=1 MHz, C DS - 106 pF oss Reverse transfer VGS=0 C 21.3 pF rss capacitance Equivalent output C (2) V =0, V =0 V to 800 V - 46.8 pF osseq capacitance GS DS t Turn-on delay time 22.5 ns d(on) V =500 V, I = 1.75 A, t Rise time DD D 7.7 ns r R =4.7 Ω, V =10 V - t Off-voltage rise time G GS 51.5 ns d(off) (see Figure21) t Fall time 19 ns f Q Total gate charge V =800 V, I = 3.5 A 42 59 nC g DD D Q Gate-source charge V =10 V - 7.3 nC gs GS Q Gate-drain charge (see Figure22) 21.7 nC gd 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS 4/15 Doc ID 10850 Rev 5

STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 3.5 A SD I (1) Source-drain current (pulsed) - 14 A SDM V (2) Forward on voltage I = 3.5 A, V =0 - 1.6 V SD SD GS I = 3.5 A, t Reverse recovery time SD 605 ns rr di/dt = 100 A/µs, Q Reverse recovery charge - 3.09 µC rr V =30 V I Reverse recovery current DD 10.5 A RRM (see Figure23) I = 3.5 A, t Reverse recovery time SD 742 ns rr di/dt = 100 A/µs, Q Reverse recovery charge - 4.2 µC rr V =35 V, T=150 °C I Reverse recovery current DD j 11.2 A RRM (see Figure23) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BV Gate-source breakdown voltage Igs=± 1 mA (open drain) 30 V GSO The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 10850 Rev 5 5/15

Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 Doc ID 10850 Rev 5

STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 10850 Rev 5 7/15

Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature Figure 16. Source-drain diode forward Figure 17. Normalized BVdss vs temperature characteristics Figure 18. Maximum avalanche energy vs temperature 8/15 Doc ID 10850 Rev 5

STP5NK100Z, STF5NK100Z, STW5NK100Z Test circuits 3 Test circuits Figure 19. Unclamped inductive load test Figure 20. Unclamped inductive waveform circuit Figure 21. Switching times test circuit for Figure 22. Gate charge test circuit resistive load Figure 23. Test circuit for inductive load switching and diode recovery times Doc ID 10850 Rev 5 9/15

Package mechanical data STP5NK100Z, STF5NK100Z, STW5NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 10850 Rev 5

STP5NK100Z, STF5NK100Z, STW5NK100Z Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F H G G1 L2 L4 L3 7012510_Rev_J Doc ID 10850 Rev 5 11/15

Package mechanical data STP5NK100Z, STF5NK100Z, STW5NK100Z TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 12/15 Doc ID 10850 Rev 5

STP5NK100Z, STF5NK100Z, STW5NK100Z Package mechanical data TO-247 Mechanical data mm. Dim. Min. Typ Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 Doc ID 10850 Rev 5 13/15

Revision history STP5NK100Z, STF5NK100Z, STW5NK100Z 5 Revision history Table 9. Document revision history Date Revision Changes 12-Oct-2004 1 First release 08-Sep-2005 2 Complete datasheet 16-Dec-2005 3 Inserted ecopack indication 16-Aug-2006 4 New template, no content change 15-May-2009 5 Modified: Section2.1: Electrical characteristics (curves) 14/15 Doc ID 10850 Rev 5

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