SiB433EDK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET V (V) R () I (A) Q (Typ.) (cid:129) New Thermally Enhanced PowerPAK® DS DS(on) D g SC-75 Package 0.058 at VGS = - 4.5 V - 9a - Small Footprint Area - 20 0.077 at VGS = - 2.5 V - 9a 7.6 nC - Low On-Resistance 0.105 at VGS = - 1.8 V - 5 (cid:129) 100 % Rg Tested (cid:129) Typical ESD Performance 2000 V (cid:129) Built in ESD Protection with Zener Diode (cid:129) Material categorization: For definitions of compliance PowerPAK SC-75-6L-Single please see www.vishay.com/doc?99912 APPLICATIONS 1 D (cid:129) Load Switch for Portable Devices S 2 D (cid:129) Charger Switch for Portable 3 Devices G D 6 D S 5 Marking Code G 1.60 mm S 1.60 mm R 4 B L X Part # code X X X Lot Traceability D Ordering Information: and Date code P-Channel MOSFET SiB433EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V ± 8 GS TC = 25 °C - 9a Continuous Drain Current (T = 150 °C) TC = 70 °C I - 9a J TA = 25 °C D - 5.3b, c TA = 70 °C - 4.3b, c A Pulsed Drain Current IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C I - 9a TA = 25 °C S - 2b, c TC = 25 °C 13 Maximum Power Dissipation TC = 70 °C P 8.4 W TA = 25 °C D 2.4b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t  5 s RthJA 41 51 °C/W Maximum Junction-to-Case (Drain) Steady State R 7.5 9.5 thJC Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. Document Number: 65652 For technical support, please contact: pmostechsupport@vishay.com www.vishay.com S12-0979-Rev. B, 30-Apr-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB433EDK Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient VDS/TJ - 13 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 2.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V VDS = 0 V, VGS = ± 8 V ± 6 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 0.5 µA VDS = - 20 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 15 A VGS = - 4.5 V, ID = - 3.7 A 0.047 0.058 Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 3.2 A 0.064 0.077  VGS = - 1.8 V, ID = - 1.5 A 0.085 0.105 Forward Transconductancea gfs VDS = - 10 V, ID = - 3.7 A 12 S Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 5.3 A 14 21 7.6 12 nC Gate-Source Charge Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A 0.8 Gate-Drain Charge Qgd 3.1 Gate Resistance Rg f = 1 MHz 0.4 2 4 k Turn-On Delay Time td(on) 0.2 0.3 Rise Time tr VDD = - 10 V, RL = 2.3  1 1.5 Turn-Off Delay Time td(off) ID  - 4.3 A, VGEN = - 4.5 V, Rg = 1  4 6 Fall Time tf 2 3 µs Turn-On Delay Time td(on) 0.09 0.14 Rise Time tr VDD = - 10 V, RL = 2.3  0.4 0.6 Turn-Off Delay Time td(off) ID  - 4.3 A, VGEN = - 8 V, Rg = 1  5.2 7.8 Fall Time tf 2.3 3.5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 9 A Pulse Diode Forward Current ISM - 20 Body Diode Voltage VSD IS = - 4.3 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 30 60 ns Body Diode Reverse Recovery Charge Qrr 20 40 nC I = - 4.3 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 17 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport@vishay.com Document Number: 65652 2 S12-0979-Rev. B, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB433EDK Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1.5 10-2 10-3 1.2 mA) TJ=25 °C A)10-4 TJ = 150 °C ent ( 0.9 ent ( urr urr10-5 C C e e TJ = 25 °C Gat 0.6 Gat10-6 - S - S S S G G10-7 I I 0.3 10-8 0.0 10-9 0 3 6 9 12 15 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 20 10 16 8 Current(A) 12 VGS=5VVGthSr=u22.V5V Current(A) 6 - DrainID 8 - DrainID 4 TC=25 °C 4 VGS=1.5V 2 TC=125 °C VGS=1V TC=-55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.4 0.8 1.2 1.6 2.0 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.18 8 VGS=1.8V 0.15 V) ID=5.3A VDS=10V Ω) e( 6 ( g nce0.12 olta VDS=5V Resista0.09 VGS=2.5V ourceV 4 VDS=16V On- o-S - DS(on)0.06 VGS=4.5V - Gate-t 2 R S G 0.03 V 0.00 0 0 4 8 12 16 20 0 3 6 9 12 15 ID-DrainCurrent(A) Qg-TotalGateCharge(nC) On-Resistance vs. Drain Current Gate Charge Document Number: 65652 For technical support, please contact: pmostechsupport@vishay.com www.vishay.com S12-0979-Rev. B, 30-Apr-12 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB433EDK Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1.5 100 d) 1.4 e (Normaliznce 11..23 VGS=4.5V,2.5V;ID=3.7A urrent(A) 10 TJ=150 °C sta 1.1 eC On-Resi 1.0 VGS=1.8V;ID=1.5A - Sourc 1 TJ=25 °C - n) 0.9 IS o S( D R 0.8 0.7 0.1 - 50 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ-JunctionTemperature(°C) VSD-Source-to-DrainVoltage(V) On-Resistance vs. Junction Temperature Soure-Drain Diode Forward Voltage 0.18 0.8 Ωe() 0.15 IDID==1.35.7A;AT;JT=J=12255 °°CC 0.7 ID=250 µA nc 0.12 n-Resista 0.09 ID=3.7A;TJ=125 °C (V)S(th) 0.6 O G - V 0.5 S(on)0.06 ID=1.5A;TJ=25 °C D R 0.4 0.03 0.00 0.3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 - 50 - 25 0 25 50 75 100 125 150 VGS-Gate-to-SourceVoltage(V) TJ-Temperature(°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 20 100 LimitedbyRDS(on)* 15 10 A) ( 100µs nt Power (W) 10 DrainCurre 1 110mmss 5 I-D 0.1 STinAg=le2P5u °lsCe 110s0,1m0ss DC BVDSSLimited 0 0.01 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 Pulse (s) VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient www.vishay.com For technical support, please contact: pmostechsupport@vishay.com Document Number: 65652 4 S12-0979-Rev. B, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB433EDK Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 15 15 12 12 A) ( PackageLimited nt ainCurre 9 ewr (W)o 9 Dr 6 P 6 - D I 3 3 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC-CaseTemperature(°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65652 For technical support, please contact: pmostechsupport@vishay.com www.vishay.com S12-0979-Rev. B, 30-Apr-12 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB433EDK Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 Duty Cycle = 0.5 nt e Transiance 0.2 ctive mped 0.1 Notes: ed Effeermal I 0.1 0.05 PDM zh aliT 0.02 t1 Norm 1. Duty Cycle,t 2D = tt12 Single Pulse 2. Per Unit Base = RthJA = 105 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e Transiance ctive mped 0.2 ed Effeermal I 0.1 zh aliT 0.05 m or 0.02 N Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/ tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65652. www.vishay.com For technical support, please contact: pmostechsupport@vishay.com Document Number: 65652 6 S12-0979-Rev. B, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix PowerPAK® SC75-6L e b e b PIN1 PIN2 PIN3 PIN1 PIN2 PIN3 L L D2 K4 K 2 1 E 1 1 E D1 3 E D1 D1 E E K K PIN6 PIN5 PIN4 PIN6 PIN5 PIN4 K3 K1 KK22 K2 K1 K2 BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E A1 C Z z DETAIL Z SINGLE PAD DUAL PAD DIM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP 0.012 TYP L 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 T 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 www.vishay.com 06-Aug-07 1

Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.250 (0.01) 0.500 (0.02) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) (0.043) 0.620 (0.024) 1.700 (0.067) 1.100 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index A P P L I C A T I O N N O T E Document Number: 70488 www.vishay.com Revision: 21-Jan-08 13

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