SUM40N15-38 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFETs V (V) R (Ω) I (A) DS DS(on) D (cid:129) 175 °C Junction Temperature 0.038 at VGS = 10 V 40 150 (cid:129) New Low Thermal Resistance Package 0.042 at VGS = 6 V 38 (cid:129) PWM Optimized (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Primary Side Switch D TO-263 G G D S Top View S Ordering Information: SUM40N15-38-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ± 20 TC = 25 °C 40 Continuous Drain Current (T = 175 °C) I J D TC = 125 °C 23 A Pulsed Drain Current IDM 80 Avalanche Current IAR 40 Repetitive Avalanche Energya L = 0.1 mH EAR 80 mJ TC = 25 °C 166b Maximum Power Dissipationa T = 25 °Cc PD 3.75 W A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount TO-263c) RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.9 Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Document Number: 72155 www.vishay.com S09-1340-Rev. B, 13-Jul-09 1

SUM40N15-38 Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 150 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 120 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = 120 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 80 A VGS = 10 V, ID = 15 A 0.030 0.038 Drain-Source On-State Resistancea RDS(on) VGS = 6 V, ID = 10 A 0.033 0.042 Ω VGS = 10 V, ID = 15 A, TJ = 125 °C 0.076 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.100 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 S Dynamicb Input Capacitance Ciss 2500 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 290 pF Reverse Transfer Capacitance Crss 190 Gate Resistance Rg 2 Ω Total Gate Chargec Qg 38 60 Gate-Source Chargec Qgs VDS = 75 V, VGS = 10 V, ID = 40 A 13 nC Gate-Drain Chargec Qgd 13 Turn-On Delay Timec td(on) 15 25 Rise Timec tr VDD = 75 V, RL = 1.80 Ω 130 200 ns Turn-Off Delay Timec td(off) ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω 30 45 Fall Timec tf 90 140 Source-Drain Diode Ratings and Characteristics T = 25°Cb C Continuous Current IS 40 A Pulsed Current ISM 80 Forward Voltagea VSD IF = 40 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr 100 150 ns Peak Reverse Recovery Current IRM(REC) IF = 40 A, dI/dt = 100 A/µs 5 8 A Reverse Recovery Charge Qrr 0.25 0.6 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72155 2 S09-1340-Rev. B, 13-Jul-09

SUM40N15-38 Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 80 80 VGS = 10 V thru 7 V 6 V 60 60 A) A) nt ( nt ( e e urr urr n C 40 n C 40 ai ai Dr Dr - ID - ID TC = 125 °C 20 20 5 V 25 °C - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 80 0.08 TC = -55 °C S) 60 25 °C )Ω 0.06 ductance ( 125 °C esistance ( VGS = 6 V VGS = 10 V n 40 R 0.04 co n- s O - Tran - S(on) gfs 20 RD 0.02 0 0.00 0 10 20 30 40 0 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 4000 20 3200 e (V) 16 VIDD =S 4=0 7 A5 V g ance (pF) 2400 Ciss urce Volta 12 cit So pa o- Ca 1600 e-t 8 C - Gat - S 800 G 4 V Coss Crss 0 0 0 25 50 75 100 125 150 0 15 30 45 60 75 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72155 www.vishay.com S09-1340-Rev. B, 13-Jul-09 3

SUM40N15-38 Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2.7 100 VGS = 10 V 2.4 ID = 15 A 2.1 ce A) - On-Resistanon)(Normalized) 111...258 Source Current ( 10 T J= 150 °C T J= 25 °C S( - RD 0.9 IS 0.6 0.3 1 -50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 T J - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 195 ID = 1 mA 185 175 V) ( S D V 165 155 145 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com Document Number: 72155 4 S09-1340-Rev. B, 13-Jul-09

SUM40N15-38 Vishay Siliconix THERMAL RATINGS 45 1000 Limited 36 by RDS(on)* 100 - Drain Current (A)D 1287 -DrainCurrent(A)D 10 111 00m0 µs µs s I I 10 ms 1 9 TC = 25 °C 100 ms, DC Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 TC - Ambient Temperature (°C) VDS-Drain-to-SourceVoltage(V) Maximum Avalanche and Drain Current *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area vs. Case Temperature 2 1 Duty Cycle = 0.5 nt e e Transiedance 0.2 ctivmp 0.1 ed Effeermal I 0.1 alizTh 0.05 m or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72155. Document Number: 72155 www.vishay.com S09-1340-Rev. B, 13-Jul-09 5

Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- A E c2 2 3 E1 6 -A- L 2D K D 4 D E3 1 D D L 3 L A A b2 c e b Detail “A” E2 0.010 M A M 2 PL 5° INCHES MILLIMETERS 0° - L4 DIM. MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 L1 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 DETAIL A (ROTATED 90°) Thin lead 0.013 0.018 0.330 0.457 c* Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 b c1 b1 Thick lead 0.023 0.027 0.584 0.685 M c2 0.045 0.055 1.143 1.397 c1 c D 0.340 0.380 8.636 9.652 SECTION A-A D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 Notes L 0.575 0.625 14.605 15.875 1. Plane B includes maximum features of heat sink tab and plastic. L1 0.090 0.110 2.286 2.794 2. No more than 25 % of L1 can fall above seating plane by L2 0.040 0.055 1.016 1.397 max. 8 mils. L3 0.050 0.070 1.270 1.778 3. Pin-to-pin coplanarity max. 4 mils. L4 0.010 BSC 0.254 BSC 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. M - 0.002 - 0.050 5. Use inches as the primary measurement. ECN: T13-0707-Rev. K, 30-Sep-13 6. This feature is for thick lead. DWG: 5843 Revison: 30-Sep-13 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 (10.668) 5 7) 5 1 3 0 0. 9. ( 0.635 16.129) ( 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 www.vishay.com 11-Apr-05 1

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