Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) Q (Typ.) DS DS(on) D g Available Channel-1 0.0185 at VGS = 10 V 6.8 7.8 (cid:129) LITTLE FOOT® Plus Power MOSFET 0.0225 at VGS = 4.5 V 6.0 (cid:129) 100 % R Tested 30 g 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 at VGS = 4.5 V 9.5 SCHOTTKY PRODUCT SUMMARY VSD (V) D1 VDS (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 SO-8 G1 G1 1 8 D1 N-Channel 1 A/S2 2 7 D2/S1 MOSFET S1/D2 A/S2 3 6 D2/S1 G2 4 5 D2/S1 Schottky Diode G2 Top View N-Channel 2 Ordering Information:Si4816BDY-T1-E3 (Lead (Pb)-free) MOSFET Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 A ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Channel-1 Channel-2 Parameter Symbol 10 s Steady State 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2750 °°CC ID 65..85 54..86 191.0.4 86..25 Pulsed Drain Current IDM 30 40 A Continuous Source Current (Diode Conduction)a IS 1 0.9 2.2 1.15 Single Pulse Avalanche Current IAS 10 20 L = 0.1 mH Avalanche Energy EAS 5 20 mJ TA = 25 °C 1.4 1.0 2.4 1.25 Maximum Power Dissipationa PD W TA = 70 °C 0.9 0.64 1.5 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Schottky Parameter Symbol Typ. Max. Typ. Max. Typ. Max. Unit t ≤ 10 s 72 90 43 53 48 60 Maximum Junction-to-Ambienta RthJA Steady State 100 125 82 100 80 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 51 63 25 30 28 35 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 73026 www.vishay.com S09-0394-Rev. D, 09-Mar-09 1

Si4816BDY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Ch-1 1.0 3.0 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA V Ch-2 1.0 3.0 Ch-1 100 Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V nA Ch-2 100 Ch-1 1 V = 30 V, V = 0 V DS GS Ch-2 100 Zero Gate Voltage Drain Current IDSS µA Ch-1 15 V = 30 V, V = 0 V, T = 85 °C DS GS J Ch-2 2000 Ch-1 20 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V A Ch-2 30 VGS = 10 V, ID = 6.8 A Ch-1 0.0155 0.0185 VGS = 10 V, ID = 11.4 A Ch-2 0.0093 0.0115 Drain-Source On-State Resistanceb RDS(on) Ω VGS = 4.5 V, ID = 6.0 A Ch-1 0.0185 0.0225 VGS = 4.5 V, ID = 9.5 A Ch-2 0.013 0.016 VDS = 15 V, ID = 6.8 A Ch-1 30 Forward Transconductanceb gfs S VDS = 15 V, ID = 11.4 A Ch-2 31 IS = 1 A, VGS = 0 V Ch-1 0.73 1.1 Diode Forward Voltageb VSD V IS = 1 A, VGS = 0 V Ch-2 0.47 0.5 Dynamica Ch-1 7.8 10 Total Gate Charge Qg Channel-1 Ch-2 11.6 18 V = 15 V, V = 5 V, I = 6.8 A DS GS D Ch-1 2.9 Gate-Source Charge Qgs nC Ch-2 4.8 Channel-2 V = 15 V, V = 5 V, I = - 11.4 A Ch-1 2.3 Gate-Drain Charge Qgd DS GS D Ch-2 3.7 Ch-1 1.5 3.0 4.5 Gate Resistance Rg Ω Ch-2 0.9 1.8 2.7 Ch-1 11 17 Turn-On Delay Time td(on) Channel-1 Ch-2 13 20 V = 15 V, R = 15 Ω DD L Ch-1 9 15 Rise Time tr ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Ch-2 9 15 Ch-1 24 40 Turn-Off Delay Time td(off) Channel-2 ns V = 15 V, R = 15 Ω Ch-2 31 50 DD L I ≅ 1 A, V = 10 V, R = 6 Ω Ch-1 9 15 Fall Time tf D GEN g Ch-2 11 17 IF = 1.3 A, dI/dt = 100 A/µs Ch-1 20 35 Source-Drain Reverse Recovery Time trr IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 25 40 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com Document Number: 73026 2 S09-0394-Rev. D, 09-Mar-09

Si4816BDY Vishay Siliconix SCHOTTKY SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit IF = 1.0 A 0.47 0.50 Forward Voltage Drop VF V IF = 1.0 A, TJ = 125 °C 0.36 0.42 VR = 30 V 0.004 0.100 Maximum Reverse Leakage Current Irm VR = 30 V, TJ = 100 °C 0.7 10 mA VR = - 30 V, TJ = 125 °C 3.0 20 Junction Capacitance CT VR = 10 V 50 pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 40 35 VGS = 10 thru 4 V 35 30 30 A) A) nt ( 25 nt ( 25 e e urr urr C C n 20 n 20 ai ai Dr Dr – 15 – 15 D D TC = 125 °C I 10 I 10 3 V 5 5 25 °C 2 V - 55 °C 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 1200 0.04 1000 Ciss )Ω F) esistance ( 0.03 acitance (p 800 n-R VGS = 4.5 V Cap 600 – On) 0.02 C – 400 DS(o VGS = 10 V Coss R 0.01 200 Crss 0.00 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 73026 www.vishay.com S09-0394-Rev. D, 09-Mar-09 3

Si4816BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 6 1.6 e (V) 5 VIDD =S 6=. 81 5A V 1.4 VIDG =S 6=. 81 0A V g a e Volt 4 ance – Gate-to-Sourc 23 – On-ResistS(on)(Normalized) 11..02 GS RD V 0.8 1 0 0.6 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 40 0.05 )Ω 0.04 ent (A) 10 TJ = 150 °C ance ( e Curr Resist 0.03 ID = 6.8 A – Sourc TJ = 25 °C – On-n) 0.02 IS DS(o R 0.01 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 100 0.2 80 ID = 250 µA V) e ( 0.0 anc W) 60 Vari -0.2 er ( S(th) Pow 40 G V -0.4 20 -0.6 -0.8 0 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ – Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com Document Number: 73026 4 S09-0394-Rev. D, 09-Mar-09

Si4816BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 Limited by RDS(on )* IDM Limited 10 A) nt ( 1 ms e Curr 1 ID(on) 10 ms n Limited ai Dr – 100 ms ID 0.1 STinCg =le 2P5u °lsCe 1 s 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp Notes: ed Effeermal I 0.1 0.1 PDM malizTh 0.05 t1 Nor 0.02 1. Duty Cyclet,2 D = t1 t2 2. Per Unit Base = RthJA = 100°C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp ed Effeermal I 0.1 0.1 alizTh 0.05 m or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 73026 www.vishay.com S09-0394-Rev. D, 09-Mar-09 5

Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 40 VGS = 10 thru 5 V 32 32 A) 4 V A) Current ( 24 Current ( 24 Drain 16 Drain 16 – – D D TC = 125 °C I I 8 8 25 °C 3 V 2 V - 55 °C 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 2000 Ciss e ()Ω 0.016 VGS = 4.5 V pF) 1600 Resistanc 0.012 VGS = 10 V acitance ( 1200 – On- 0.008 – Cap 800 n) C S(o Coss RD 0.004 400 Crss 0.000 0 0 5 10 15 20 25 30 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 1.6 e (V) 5 VIDD =S 9=. 51 5A V 1.4 VIDG =S 9=. 51 0A V g Volta 4 ance urce esist zed) 1.2 Gate-to-So 23 – On-Ron)(Normali 1.0 – DS( R S G 0.8 V 1 0 0.6 0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com Document Number: 73026 6 S09-0394-Rev. D, 09-Mar-09

Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 0.05 0.04 ent (A) 10 TJ = 150 °C nce ()Ω ce Curr Resista 0.03 – SourS TJ = 25 °C – On-on) 0.02 ID = 9.5 A I S( RD 0.01 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 100 11 80 A) m VDS = 30 V nt ( 0.1 se Curre 0.01 VDS = 24 V wer (W) 60 ver Po 40 e R – 0.001 R I 20 0.0001 0.00001 0 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ – Temperature (°C) Time (s) Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on )* IDM Limited 10 A) 1 ms nt ( Curre 1 LIiDm(oitne)d 10 ms n ai Dr 100 ms – ID 0.1 STinCg =le 2P5u °lsCe 110 s s DC BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 73026 www.vishay.com S09-0394-Rev. D, 09-Mar-09 7

Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2 1 Duty Cycle = 0.5 nt e e Transiedance 0.2 Notes: ctivmp 0.1 PDM Normalized EffeThermal I 0.1 00..0052 123... TPDeJuMrt y U- Cn TiytA tcB1 l=ea ,sP tD2eD M== ZRththJAJA(tt12t )= 82°C/W 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp ed Effeermal I 0.1 0.1 alizTh 0.05 m or N 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com Document Number: 73026 8 S09-0394-Rev. D, 09-Mar-09

Si4816BDY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 20 10 10 TJ = 150 °C A) verse Current (m 0.11 30 V 24 V )A( tnerruC draw TJ = 25 °C – Re 0.01 −roF R F I I 0.001 0.0001 1 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 TJ – Temperature (°C) VF− Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 200 160 F) p e ( nc 120 a cit a p a – C 80 C Coss 40 0 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73026. Document Number: 73026 www.vishay.com S09-0394-Rev. D, 09-Mar-09 9

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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