4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be  20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate)(cid:31) Applications (2)Collector(Drain)(cid:31) Switching (3)Emitter(Source) Packaging specifications Inner circuit Package(cid:31) Taping Code(cid:31) TL ∗2 Type Basic ordering unit (pieces) 2500 RSD200N10 ∗1 BODY DIODE(cid:31) ∗1 ∗2 ESD PROTECTION(cid:31) DIODE(cid:31) (cid:31) (1)GATE(cid:31) (2)DRAIN(cid:31) (3)SOURCE (1) (2) (3) Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 V Continuous ID ∗3 ±20 A Drain current Pulsed IDP ∗1 ±80 A Source current Continuous IS 20 A (Body Diode) Pulsed ISP ∗1 80 A Avalanche Current IAS ∗2 20 A Avalanche Energy EAS ∗2 85 mJ Total power dissipation (Tc=25°C) PD 20 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 265μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed Thermal resistance Parameter Symbol Limits Unit Channel to case Rth(ch-c) 6.25 °C/W www.rohm.com 1/3 2012.04 - Rev.B ○c 2012 ROHM Co., Ltd. All rights reserved.

RSD200N10 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 μA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 100 − − V ID=1mA, VGS=0V Zero gate voltage drain current IDSS − − 10 μA VDS=100V, VGS=0V Gate threshold voltage VGS(th) 1.0 − 2.5 V VDS=10V, ID=1mA − 41 52 mΩ ID=10A, VGS=10V Static drain-source on-state resistance RDS(on)∗ − 44 58 mΩ ID=10A, VGS=4.5V − 45 59 mΩ ID=10A, VGS=4.0V Forward transfer admittance | Yfs |∗ 14 − − S ID=10A, VDS=10V Input capacitance Ciss − 2200 − pF VDS=25V Output capacitance Coss − 180 − pF VGS=0V Reverse transfer capacitance Crss − 110 − pF f=1MHz Turn-on delay time td(on) ∗ − 18 − ns ID=10A, VDD 50V Rise time tr ∗ − 61 − ns VGS=10V Turn-off delay time td(off) ∗ − 128 − ns RL=5Ω Fall time tf ∗ − 193 − ns RG=10Ω Total gate charge Qg ∗ − 48.5 − nC VDD 50V Gate-source charge Qgs ∗ − 5.5 − nC IVDG=S2=01A0V Gate-drain charge Qgd ∗ − 13 − nC RL=2.5Ω / RG=10Ω ∗ Pulsed Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD∗ − − 1.5 V IS= 20A, VGS=0V ∗ Pulsed www.rohm.com 2/3 2012.04 - Rev.B ○c 2012 ROHM Co., Ltd. All rights reserved.

RSD200N10 Data Sheet Electrical characteristic curves Static Drain-Source On-State Resistance :(on)()RΩ0DS.00.11 VPGuSls=e1d0V Ta=1-27225555°°°°CCCC Typical Capacitance : C (pF)10100100010000 fVT=aG1S=M=20H5V°zC CisCsrCsosss Gate Source Voltage : V(V)GS 110505 TVIPDDau=Dl=2s=20e55dA0°(cid:31)VC(cid:31)(cid:31) 0.1 1 10 100 0.01 0.1 1 10 100 0 10 20 30 40 50 Drain Current : ID(A) Drain-Source Voltage : VDS(V) Total Gate Charge : Qg(nC) Fig.1 Static Drain-Source On-State Fig.2 Typical Capacitance vs. Fig.3 Dynamic Input Characteristics Resistance vs. Drain Current Drain-Source Voltage www.rohm.com 3/3 2012.04 - Rev.B ○c 2012 ROHM Co., Ltd. All rights reserved.

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