Polar TM HiPerFETTM IXFA14N60P V = 600V DSS Power MOSFET IXFP14N60P I = 14A D25 R  550m IXFH14N60P DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) V T = 25C to 150C 600 V DSS J V T = 25C to 150C, R = 1M 600 V DGR J GS V Continuous 30 V GSS V Transient 40 V G GSM D S I T = 25C 14 A D (Tab) D25 C I T = 25C, Pulse Width Limited by T 42 A DM C JM TO-247 (IXFH) I T = 25C 14 A A C E T = 25C 900 mJ AS C dv/dt I  I , V  V , T  150°C 10 V/ns S DM DD DSS J G PD TC = 25C 300 W D S D (Tab) T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 °C L T 1.6 mm (0.062in.) from Case for 10s 260 °C SOLD Features F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d  International Standard Packages Weight TO-263 2.5 g  Low R and Q DS(ON) G TO-220 3.0 g  Avalanche Rated TO-247 6.0 g  Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max.  High Power Density J  Easy to Mount BV V = 0V, I = 250μA 600 V DSS GS D  Space Savings V V = V , I = 2.5mA 3.0 5.5 V GS(th) DS GS D I V = 30V, V = 0V 100 nA Applications GSS GS DS I V = V , V = 0V 5 A  Switch-Mode and Resonant-Mode DSS DS DSS GS T = 125C 500 A Power Supplies J  DC-DC Converters R V = 10V, I = 0.5 • I , Note 1 550 m  PFC Circuits DS(on) GS D D25  AC and DC Motor Drives  Robotics and Servo Controls © 2018 IXYS CORPORATION, All Rights Reserved DS99389G(6/18)

IXFA14N60P IXFP14N60P IXFH14N60P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 • I , Note 1 7 13 S fs DS D D25 C 2500 pF iss C V = 0V, V = 25V, f = 1MHz 215 pF oss GS DS C 13 pF rss t 23 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D D25 70 ns d(off) R = 10 (External) t G 26 ns f Q 36 nC g(on) Q V = 10V, V = 0.5 • V , I = 0.5 • I 16 nC gs GS DS DSS D D25 Q 12 nC gd R 0.42 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 14 A S GS I Repetitive, pulse Width Limited by T 42 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 200 ns rr I = 14A, -di/dt = 100A/μs Q F 600 nC RM V = 100V I R 6 A RM Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

IXFA14N60P IXFP14N60P IXFH14N60P Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 14 30 VGS = 10V VGS = 10V 9V 12 8V 25 8V 10 20 s s ere 8 ere 7V p p m m 15 A A - D 6 - D I I 10 4 7V 2 5 6V 0 0 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Fig. 3. Output Characteristics @ TJ = 125oC Junction Temperature 14 3.4 VGS = 10V 3.0 VGS = 10V 12 8V 2.6 peres 108 7V ormalized 2.2 I D = 14A I - AmD 6 - NS(on) 11..48 I D = 7A D R 4 1.0 5V 2 0.6 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Fig. 6. Maximum Drain Current vs. Case Temperature Drain Current 3.4 16 3.0 VGS = 10V 14 TJ = 125oC 12 d 2.6 e z ormali 2.2 peres 10 N m 8 - S(on) 1.8 TJ = 25oC I - AD 6 D R 1.4 4 1.0 2 0.6 0 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2018 IXYS CORPORATION, All Rights Reserved

IXFA14N60P IXFP14N60P IXFH14N60P Fig. 7. Input Admittance Fig. 8. Transconductance 30 28 TJ = - 40oC 24 25 25oC 20 20 s eres TJ = 125oC men 16 125oC mp 15 25oC Sie I - AD - 40oC g - f s 12 10 8 5 4 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 20 25 30 35 40 45 50 V - Volts I - Amperes GS D Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 VDS = 300V 40 8 I D = 7A I G = 10mA 35 7 s ere 30 olts 6 p V Am 25 - S 5 - S 20 VG 4 I TJ = 125oC 15 3 10 TJ = 25oC 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 20 25 30 35 40 V - Volts Q - NanoCoulombs SD G Fig. 14. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 f = 1 MHz Ciss s ad RDS(on) Limit 25μs ar oF 1,000 c s ce - Pi Coss mpere10 100μs acitan I - AD 1ms p 100 a 10ms C TJ = 150oC TC = 25oC Crss Single Pulse DC 10 1 0 5 10 15 20 25 30 35 40 10 100 1,000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA14N60P IXFP14N60P IXFH14N60P Fig. 13. Maximum Transient Thermal Impedance 1 W K / - C 0.1 Z(th)J 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_14N60P (5J) 12-22-08-G

IXFA14N60P IXFP14N60P IXFH14N60P TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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