(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:7) IRLMS2002PbF HEXFET(cid:1)(cid:1)Power MOSFET (cid:2) Ultra Low On-Resistance A (cid:2) N-Channel MOSFET D 1 6 D V = 20V (cid:2) Surface Mount DSS (cid:2) Available in Tape & Reel D 2 5 D (cid:2) 2.5V Rated (cid:2) Lead-Free G 3 4 S RDS(on) = 0.030Ω Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with R 60% DS(on) less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R reduction DS(on) enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6™ (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:14)(cid:6)(cid:14)(cid:9)(cid:15)(cid:11)(cid:7)(cid:13)(cid:16)(cid:17)(cid:3) Parameter Max. Units VDS Drain- Source Voltage 20 V I @ T = 25°C Continuous Drain Current, V @ 4.5V 6.5 D A GS I @ T = 70°C Continuous Drain Current, V @ 4.5V 5.2 A D A GS I Pulsed Drain Current (cid:1) 20 DM P @T = 25°C Power Dissipation 2.0 D A (cid:1) P @T = 70°C Power Dissipation 1.3 D A Linear Derating Factor 0.016 W/°C V Gate-to-Source Voltage ± 12 V GS TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Max. Units RθJA Maximum Junction-to-Ambient(cid:1) 62.5 °C/W www.irf.com 1 1/18/05

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:7)(cid:6)(cid:8)(cid:9)(cid:10) Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance –––––– –––––– 00..003405 Ω VVGGSS == 42..55VV,, IIDD == 65..52AA (cid:3)(cid:3) VGS(th) Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA gfs Forward Transconductance 13 ––– ––– S VDS = 10V, ID = 6.5A I Drain-to-Source Leakage Current ––– ––– 1.0 (cid:3)(cid:4) VDS = 16V, VGS = 0V DSS ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C (cid:2) Gate-to-Source Forward Leakage ––– ––– -100 (cid:5)(cid:4) VGS = -12V (cid:1)(cid:2)(cid:2) Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 15 22 ID = 6.5A Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = 5.0V (cid:3) td(on) Turn-On Delay Time ––– 8.5 ––– VDD = 10V tr Rise Time ––– 11 ––– (cid:5)(cid:6) ID = 1.0A td(off) Turn-Off Delay Time ––– 36 ––– RG = 6.0Ω tf Fall Time ––– 16 ––– RD = 10Ω (cid:3) Ciss Input Capacitance ––– 1310 ––– VGS = 0V Coss Output Capacitance ––– 150 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 36 ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (cid:7)(cid:7)(cid:7) (cid:7)(cid:7)(cid:7) 2.0 MOSFET symbol D (Body Diode) showing the (cid:4) ISM Pulsed Source Current (cid:7)(cid:7)(cid:7) (cid:7)(cid:7)(cid:7) 20 integral reverse G (Body Diode) (cid:1) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V(cid:4)(cid:3) trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = 1.7A Qrr Reverse Recovery Charge ––– 13 20 nC di/dt = 100A/µs (cid:3) (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:2)(cid:8)Repetitive rating; pulse width limited by (cid:1)(cid:8)(cid:8)Surface mounted on FR-4 board, t(cid:8)≤ (cid:12)(cid:6)(cid:13)(cid:14)(cid:11) max. junction temperature. ( See fig. 11 ) (cid:3) Pulse width(cid:8)≤ 400µs; duty cycle ≤(cid:8)(cid:9)(cid:10)(cid:11) 2 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:7)(cid:6)(cid:8)(cid:9)(cid:10) 100 100 VGS VGS TOP 7.50V TOP 7.50V 5.00V 5.00V nt (A) 4332....05050000VVVV nt (A) 4332....05050000VVVV urre BOTTOM21..0500VV urre BOTTOM21..0500VV C C e e c c ur ur o 10 o 10 S S o- o- n-t n-t ai ai Dr Dr 1.50V I , D 1.50V I , D 20µs PULSE WIDTH 20µs PULSE WIDTH TJ = 25°C TJ = 150°C 1 1 0.1 1 10 100 0.1 1 10 100 VD S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID=5.3A e c A) an ent ( TJ = 25 ° C esist 1.5 Source Curr 10 TJ = 150 ° C Source On Rmalized) 1.0 I , Drain-to-D V20 D µ Ss =P U15LVSE WIDTH R , Drain-to-DS(on)(Nor 0.5 VGS=4.5V 1 0.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 V G S , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:7)(cid:6)(cid:8)(cid:9)(cid:10) 2000 10 VGS=0V, f = 1MHz ID=5(cid:1).(cid:2)3(cid:3)A(cid:4) CCirssss ==CCggsd+ Cgd , Cd s SHORTED V) VDS= 10V 1600 Coss=Cds + Cgd e ( 8 g pF) Ciss olta ance ( 1200 urce V 6 pacit o-So Ca 800 e-t 4 C, Gat 400 V , GS 2 Coss Crss 0 0 1 10 100 0 4 8 12 16 20 24 VD S , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) A) ent ( A)A) Curr 10 nt (nt ( ee ain TJ = 150 ° C urrurr erse Dr Drain CDrain C 10 1ms I , RevSD 1 TJ = 25 ° C I , I , D TA= 25 ° C 10ms T = 150 ° C J 0.1 V G S = 0 V 1 Single Pulse 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 V S D ,Source-to-Drain Voltage (V) VD S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:7)(cid:6)(cid:8)(cid:9)(cid:10) 6.0 0.20 5.0 0.10 A) V) ent ( 4.0 aec( 0.00 Id = 250µA urr ari ain C 3.0 V ,h) -0.10 Dr S(t-0.20 I , D2.0 VG -0.30 1.0 -0.40 0.0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T C , Case Temperature ( ° C) TJ , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Fig 10. Typical Vgs(th) Variance Vs. Case Temperature Juction Temperature 100 ) D = 0.50 Z thJA 0.20 ( 10 e 0.10 s n o p 0.05 s e R al 0.02 PDM rm 1 0.01 t1 e h t2 T Notes: SINGLE PULSE 1. Duty factor D = t 1 / t2 (THERMAL RESPONSE) 2. Peak TJ=PDMx ZthJA+ TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:7)(cid:6)(cid:8)(cid:9)(cid:10) ) 0.040 Ω 0.10 ) Ω e( e( anc oagtl 0.035 essti 0.08 V R e n c O ur e o c Sno--t 0.030 Soou-r 0.06 Dar , iRDSon() 0.025 Id = 5.3A Danonr-() t ,iS 0.04 VGS= 2.5V VGS = 4.5V 0.020 RD 0.02 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 10 20 30 40 VGS, Gate -to -Source Voltage ( V ) ID, - Drain Current (A ) Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs. Gate Voltage Drain Current 6 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:7)(cid:6)(cid:8)(cid:9)(cid:10) Micro6 (SOT23 6L) Package Outline Dimensions are shown in milimeters (inches) 3.00 (.118 ) -B- LEAD ASSIGNMENTS RECOMMENDED FOOTPRINT 2.80 (.111 ) D D S 2X 0.95 (.0375 ) 1.75 (.068 ) 6 5 4 6X (1.06 (.042 ) 1.50 (.060 ) 3.00 (.118 ) 6 5 4 2.60 (.103 ) -A- 1 2 3 1 2 3 2.20 (.087 ) D D G 0.95 ( .0375 ) 2X 6X00..5305 ((..001194 )) 6X 0.65 (.025 ) 0.15 (.006 ) M C A S B S 1.30 (.051 ) 1.45 (.057 ) 0 O - 1 0 O 6X00..2009 ((..000074 )) 0.90 (.036 ) 0.90 (.036 ) -C- 0.10 (.004 ) 0.15 (.006 ) 6 SURFACES 0.60 (.023 ) MAX. 0.10 (.004 ) NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:7) ™ Micro6 (SOT23 6L) Part Marking Information W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y WEEK W Y = YEAR 2001 1 01 A PART NUMBER W = WEEK 2002 2 02 B 2003 3 03 C 2004 4 04 D 2005 5 LOT 2006 6 CODE 2007 7 TOP 2008 8 2009 9 2010 0 24 X PART NUMBER CODE REFERENCE: 25 Y 26 Z A = IRLMS1902 B = IRLMS1503 W = (27-52) IF PRECEDED BY A LETTER C = IRLMS6702 WORK D = IRLMS5703 YEAR Y WEEK W E = IRLMS6802 2001 A 27 A F = IRLMS4502 2002 B 28 B G = IRLMS2002 2003 C 29 C H = IRLMS6803 2004 D 30 D 2005 E 2006 F 2007 G Note: A line above the work week 2008 H (as shown here) indicates Lead-Free. 2009 J 2010 K 50 X 51 Y 52 Z www.irf.com 7

(cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:7)(cid:6)(cid:8)(cid:9)(cid:10) Micro6 Tape & Reel Information Dimensions are shown in milimeters (inches) 8mm 4mm FEED DIRECTION NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/05 8 www.irf.com

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