Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D S 4 8 October 2008 9 7 FDS4897AC A C Dual N & P-Channel PowerTrench® MOSFET D u N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ a l N Features General Description & Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using P - (cid:132) Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A Fairchild Semiconductor's advanced PowerTrench® process Ch that has been especially tailored to minimize on-state resistance a (cid:132) Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A and yet maintain superior switching performance. nn Q2: P-Channel e l (cid:132) Max r = 39 mΩ at V = -10 V, I = -5.2 A P DS(on) GS D Applications o (cid:132) Max r = 65 mΩ at V = -4.5 V, I = -4.1 A w DS(on) GS D (cid:132) Inverter e (cid:132) 100% UIL Tested (cid:132) Power Supplies rT r (cid:132) RoHS Compliant e n c h ® M D2 O S D2 QQ22 D2 5 4 G2 F D1 E T D1 D2 6 3 S2 QQ11 G2 D1 7 2 G1 S2 G1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 40 -40 V DS V Gate to Source Voltage ±20 ±20 V GS Drain Current - Continuous 6.1 -5.2 I A D - Pulsed 24 -24 Power Dissipation for Dual Operation 2.0 P Power Dissipation for Single Operation T = 25 °C (Note 1a) 1.6 W D A T = 25 °C (Note 1b) 0.9 A E Single Pulse Avalanche Energy (Note 3) 37 73 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case, (Note 1) 40 θJC °C/W R Thermal Resistance, Junction to Ambient, (Note 1a) 78 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS4897AC FDS4897AC SO-8 13 ” 12 mm 2500 units ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS4897AC Rev.C

F D Electrical Characteristics T = 25 °C unless otherwise noted S J 4 8 Symbol Parameter Test Conditions Type Min Typ Max Units 9 7 Off Characteristics A C BVDSS Drain to Source Breakdown Voltage IID == 2-25500 µ µAA, ,V VGS = = 0 0 V V QQ12 -4400 V D D GS u ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, referenced to 25 °C Q1 37 mV/°C a ∆TJ Coefficient ID = -250 µA, referenced to 25 °C Q2 -32 l N IDSS Zero Gate Voltage Drain Current VVDS == -3322 V V, , VVGS == 00 VV QQ12 -11 µA & DS GS P Q1 ±100 nA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V Q2 ±100 nA -C h a On Characteristics n n VGS(th) Gate to Source Threshold Voltage VVGGSS == VVDDSS,, IIDD == -225500 µ µAA QQ12 -11..55 -22..00 -33..00 V el P ∆ ∆VTGS(th) GTeamtep teor aStuoruer cCeo Tehffriceisehnotld Voltage IID == 2-25500 µ µAA, ,r erefefererenncceedd t oto 2 255 ° °CC QQ21 - 66 mV/°C ow J D e VGS = 10 V, ID = 6.1 A 20 26 r T V = 4.5 V, I = 5.6 A Q1 24 31 GS D r V = 10 V, I = 6.1 A, T = 125 °C 30 39 e r Static Drain to Source On Resistance GS D J mΩ n DS(on) VGS = -10 V, ID = -5.2 A 28 39 c V = -4.5 V, I = -4.1 A Q2 45 65 h GS D ® VGS = -10 V, ID = -5.2 A, TJ = 125 °C 41 57 M g Forward Transconductance VDD = 5 V, ID = 6.1 A Q1 24 S O FS VDD = -5 V, ID = -5.2 A Q2 14 S F Dynamic Characteristics E T C Input Capacitance Q1 Q1 795 1055 pF iss V = 20 V, V = 0 V, f = 1 MHZ Q2 765 1015 DS GS Q1 95 130 C Output Capacitance pF oss Q2 Q2 135 180 VDS = -20 V, VGS = 0 V, f = 1 MHZ Q1 65 100 C Reverse Transfer Capacitance pF rss Q2 80 120 Q1 1.7 R Gate Resistance Ω g Q2 3.6 Switching Characteristics Q1 6 12 td(on) Turn-On Delay Time Q1 Q2 8 15 ns V = 20 V, I = 6.1 A, DD D Q1 2 10 tr Rise Time VGS = 10 V, RGEN = 6 Ω Q2 3 10 ns Q1 17 30 t Turn-Off Delay Time Q2 ns d(off) Q2 17 30 V = -20 V, I = -5.2 A, DD D tf Fall Time VGS = -10 V, RGEN = 6 Ω QQ12 23 1100 ns Q1 15 21 Qg(TOT) Total Gate Charge Q1 Q2 15 20 nC V = 10 V, V = 20 V, I = 6.1 A GS DD D Q1 2.5 Q Gate to Source Charge nC gs Q2 2.6 Q2 Qgd Gate to Drain “Miller” Charge VGS = -10 V, VDD = -20 V, ID = -5.2 A QQ12 23..92 nC ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDS4897AC Rev.C

F Electrical Characteristics T = 25 °C unless otherwise noted D J S Symbol Parameter Test Conditions Type Min Typ Max Units 4 8 9 Drain-Source Diode Characteristics 7 A V Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) Q1 0.75 1.2 V C SD VGS = 0 V, IS = -1.3 A (Note 2) Q2 -0.76 -1.2 D Q1 Q1 17 31 t Reverse Recovery Time ns u rr IF = 6.1 A, di/dt = 100 A/s Q2 20 36 a Q2 Q1 7 15 l Q Reverse Recovery Charge nC N rr IF = -5.2 A, di/dt = 100 A/s Q2 10 20 & P N1:otReθsJ:A is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by -C the user's board design. h a n a) 78 °C/W when b) 135 °C/W when n mounted on a 1 in2 mounted on a e pad of 2 oz copper minimun pad l P o w e r T r e n c h ® 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. M 3: Starting TJ = 25 °C, N-ch: L = 3 mH, IAS = 5 A, VDD = 40 V, VGS = 10 V; P-ch: L = 3 mH, IAS = -7 A, VDD = -40 V, VGS = -10 V. O S F E T ©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDS4897AC Rev.C

F D S 4 Typical Characteristics (Q1 N-Channel) T = 25 °C unless otherwise noted 8 J 9 7 A C 24 5 VGS = 10 V CE PULSE DURATION = 80 µs D 20 VGS = 4.5 V AN VGS = 3 V DUTY CYCLE = 0.5% MAX u T 4 a URRENT (A) 1126 VGS = 4 V VGS = 3.5 V ALIZEDE ON-RESIS 3 VGS = 3.5 V l N & P AIN C 8 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A µXs NORM OURC 2 -Ch DR O S VGS = 4 V VGS = 4.5 V a , ID 4 N T nn 0 VGS = 3 V DRAI 0.51 VGS = 10 V el P 0.0 0.5 1.0 1.5 2.0 0 4 8 12 16 20 24 o VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURR ENT (A) w e r Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance T r vs Drain Current and Gate Voltage e n c h 1.8 80 ® ANCE 1.6 IVDG =S 6=. 11 0A V )mΩ 70 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A µXs MO NORMALIZED O SOURCE ON-RESIST 111...024 rDRAIN TO ,DS(on)(RCE ON-RESISTANCE 34560000 ID = 6T.J1 =A 125 oC SFET N T 0.8 OU 20 RAI S TJ = 25 oC D 0.6 10 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 24 40 20 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A µXs T (A) 10 VGS = 0 V A) EN T ( VDS = 5 V RR URREN 1126 AIN CU 1 TJ = 150 oC TJ = 25 oC C R RAIN 8 TJ = 150 oC RSE D 0.1 I, DD 4 TJ = 25 oC TJ = -55 oC REVE 0.01 TJ = -55 oC , S I 0 0.001 1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDS4897AC Rev.C

F D Typical Characteristics (Q1 N-Channel) T = 25 °C unless otherwise noted S J 4 8 9 7 10 2000 A GE (V) 8 ID = 6.1 A 1000 C D OLTA VDD = 15 V pF) Ciss ua E TO SOURCE V 46 VDD = 20 V VDD = 25 V CAPACITANCE ( 100 CCorssss l N & P-C T 2 h A G f = 1 MHz a V, GS 0 10 VGS = 0 V nn e 0 4 8 12 16 0.1 1 10 40 l Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) P o w Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain e to Source Voltage rT r e n 10 7 c 9 h 8 ® T (A) 67 A) 6 M REN 5 NT ( 5 OS ANCHE CUR 34 TJ = 125 oC TJ = 25 oC RAIN CURRE 34 VGS = 4.5 V VGS = 10 V FET VAL 2 , DD2 A I , S 1 A I RθJA = 78 oC/W 1 0 0.01 0.1 1 10 20 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, AMBIENT TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Ambient Temperature 30 1000 10 W) VGS = 10 V 100 us R ( T (A) OWE 100 SINGLE PULSE CURREN 1 THIS AREA IS 11 0m mss SIENT P RTAθJ =A 2=5 1 o3C5 oC/W AIN LIMITED BY rDS(on) 100 ms RAN 10 R T D 0.1 SINGLE PULSE 1 s K I, D0.01 TRTJAθ J ==A M2=5 A1 Xo3C 5R oACT/WED 1D0C s , PPEA()PK 0.51 0.01 0.1 1 10 100200 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDT H (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDS4897AC Rev.C

F D Typical Characteristics (Q1 N-Channel) T = 25 °C unless otherwise noted S J 4 8 9 7 A 2 C 1 DUTY CYCLE-DESCENDING ORDER D u MAL A D = 00..25 al N D THER NCE,ZJθ 0.1 000...10052 PDM & P LIZEEDA 0.01 -C ORMAIMP 0.01 SINGLE PULSE t1t2 han N R = 135 oC/W NOTES: n θJA DUTY FACTOR: D = t1/t2 e (Note 1b) PEAK TJ = PDM x ZθJA x RθJA + TA l P 0.001 o 10-4 10-3 10-2 10-1 1 10 100 1000 w t, RECTANGULAR PULSE DURATION (sec) e r T Figure 13. Junction-to-Ambient Transient Thermal Response Curve r e n c h ® M O S F E T ©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDS4897AC Rev.C

F D Typical Characteristics (Q2 P-Channel) T = 25 °C unless otherwise noted S J 4 8 9 7 24 5 A NT (A) 1260 VGS = -4.5 VVGS =V G -S5 =V -10 VVGS = - 4 V ESISTANCE 4 VGS = -3.5 V PDUULTSYE VC DYUC =RL E-A4 T =VI O0.N5 %= 8M0A µXs C Dua E DR GS l AIN CURR 12 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A µXs ORMALIZE URCE ON- 3 VGS = -4.5 V N & P , -IDRD 48 VGS = -3.5 V NN TO SO 2 VGS = -5 V -Cha AI 1 n 0 DR 0.5 VGS = -10 V n e 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 24 l -VDS, DRAIN TO SO URCE VOLTAGE (V) -ID, DRAIN CURR ENT (A) Po w Figure 15. On- Region Characteristics Figure 16. Normalized on-Resistance vs Drain e r Current and Gate Voltage T r e n 1.8 120 c h ANCE 1.6 IVDG =S -=5 .-21 0A V )mΩ 100 ID = -5.2 A PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A µXs M® NORMALIZED O SOURCE ON-RESIST 111...024 , rDRAIN TO DS(on) (CE ON-RESISTANCE 6800 TJ = 125 oC OSFET T R 40 N 0.8 U RAI SO TJ = 25 oC D 0.6 20 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) -VGS, GATE TO SOU RCE VOLTAGE (V) Figure 17. Normalized On-Resistance Figure 18. On-Resistance vs Gate to vs Junction Temperature Source Voltage 24 40 PULSE DURATION = 80 µs A) VGS = 0 V 20 DUTY CYCLE = 0.5% MAX NT ( 10 A) VDS = -5 V RE NT ( 16 CUR 1 TJ = 150 oC N CURRE 12 TJ = 150 oC E DRAIN 0.1 TJ = 25 oC AI 8 RS R E , D-ID 4 TJ = 25 oC TJ = -55 oC , REVS0.01 TJ = -55 oC -I 0 0.001 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SO URCE VOLTAGE (V) -VSD, BODY DIODE FO RWARD VOLTAGE (V) Figure 19. Transfer Characteristics Figure 20. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDS4897AC Rev.C

F D S Typical Characteristics (Q2 P-Channel) T = 25 °C unless otherwise noted 4 J 8 9 7 A 10 2000 C GE (V) 8 ID = -5.2 A 1000 Ciss D A u E VOLT 6 VDD = -15 V E (pF) Coss al N URC VDD = -20 V VDD = -25 V ANC & SO 4 CIT 100 P O A - ATE T 2 CAP Crss Cha , GGS fV =G S1 =M 0H Vz nn -V 0 10 e 0 4 8 12 16 0.1 1 10 40 l P Qg, GATE CH ARGE (nC) -VDS, DRAIN TO SOU RCE VOLTAGE (V) o w e Figure 21. Gate Charge Characteristics Figure 22. Capacitance vs Drain r T to Source Voltage r e n c 10 6 h 9 ® 8 M RENT (A) 567 ENT (A) 45 OSF UR 4 RR VGS = -10 V E C U T HE 3 N C 3 , AVALANCS 2 TJ = 125 oC TJ = 25 oC , -IDRAID12 VGS = -4.5 V I-A RθJA = 78 oC/W 1 0 0.1 1 10 40 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, AMBIENT TEMPERATURE (oC) Figure 23. Unclamped Inductive Figure 24. Maximum Continuous Drain Switching Capability Current vs Ambient Temperature 30 1000 100 us W) VGS = -10 V 10 R ( A) E CURRENT ( 1 TLIHMISIT AERDE BAY I Srds(on) 110 m mss SIENT POW 100 SRIθNJAG =L E1 3P5U oLCS/WE AIN 100 ms RAN 10 R T -I, DD00.0.11 STRTJAIθN J ==AG M 2=L5A E1 Xo 3P CR5U AoLTCSE/EWD D110 Cs s P, PEAK ()PK 0.51 0.01 0.1 1 10 100200 10-4 10-3 10-2 10-1 1 10 100 1000 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE W IDTH (sec) Figure 25. Forward Bias Safe Figure 26. Single Pulse Maximum Power Operating Area Dissipation ©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDS4897AC Rev.C

F D S Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted 4 8 9 7 A 2 C 1 DUTY CYCLE-DESCENDING ORDER D u MAL A D = 00..25 al N D THER NCE,ZJθ 0.1 000...10052 PDM & P ALIZEPEDA 0.01 t1 -Ch RMIM 0.01 SINGLE PULSE t2 a O NOTES: n N RθJA = 135 oC/W DUTY FACTOR: D = t1/t2 n (Note 1b) PEAK TJ = PDM x ZθJA x RθJA + TA el P 0.001 o 10-4 10-3 10-2 10-1 1 10 100 1000 w t, RECTANGULAR PULSE DURATION (sec) e r T Figure 27. Junction-to-Ambient Transient Thermal Response Curve r e n c h ® M O S F E T ©2008 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FDS4897AC Rev.C

F D S 4 8 9 7 A C TRADEMARKS D The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not u a intended to be an exhaustive list of all such trademarks. l Build it Now™ FRFET® Programmable Active Droop™ N CorePLUS™ Global Power ResourceSM QFET® & CCoRrOePSOSVWOELRT™™ GGrreeeenn FFPPSS™™ e-Series™ QQSui™et Series™ TinyBoost™tm P CTL™ GTO™ RapidConfigure™ TTiinnyyLBougcikc™® -C CEcuorrSePntA TRrKan®sfer Logic™ IISntOelPliMLAANXA™R™ ™ TTIinNyYPOoPwTeOr™™ ha EfficentMax™ MegaBuck™ Saving our world, 1mW /W /kW at a time™ n TinyPWM™ EZSWITCH™ * MICROCOUPLER™ SmartMax™ n ™ MicroFET™ SMART START™ TinyWire™ e MicroPak™ SPM® µSerDes™ l P ® MillerDrive™ STEALTH™ o MotionMax™ SuperFET™ Fairctmhild® Motion-SPM™ SuperSOT™-3 UHC® w Fairchild Semiconductor® OPTOLOGIC® SuperSOT™-6 Ultra FRFET™ e FACT Quiet Series™ OPTOPLANAR® SuperSOT™-8 UniFET™ rT FACT® ® SupreMOS™ VCX™ r FAST® SyncFET™ VisualMax™ en FFlaassthvWCorirtee™r® * PDPtm SPM™ ® XS™ ch FFP-PSF™S™ PPoowweerrT-SrePnMc™h® The Power Franchise® ® PowerXS™ M O * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. S F DISCLAIMER E FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE T RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Preliminary First Production Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Dmaatkaes hceheatn cgoenst aaitn asn fyin taiml sep wecitihfiocautti onnosti.c Fe atoir cimhilpdr oSveem thiceo nddeuscigtonr. reserves the right to Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2008 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com FDS4897AC Rev.C

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