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F D M S March 2011 2 7 3 FDMS2734 4 N N-Channel UltraFET Trench® MOSFET(cid:2) -C h 250V, 14A, 122m(cid:3) a n Features General Description n e l (cid:2) Max rDS(on) = 122m(cid:3) at VGS = 10V, ID = 2.8A UItraFET devices combine characteristics that enable U l (cid:2) Max r = 130m(cid:3) at V = 6V, I = 1.7A benchmark efficiency in power conversion applications. tr DS(on) GS D Optimized for r , low ESR, low total and Miller gate charge, a (cid:2) Low Miller Charge these devices aDrSe( oidn)eal for high frequency DC to DC converters. FE (cid:2) Optimized efficiency at high frequencies Application T T (cid:2) RoHS Compliant r (cid:2) DC - DC Conversion e n c h ® M O S F E T Pin 1 S S S G D 5 4 G D 6 3 S D 7 2 S D D D D D 8 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 250 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Silicon limited) T = 25°C 14 C I -Continuous T = 25°C (Note 1a) 2.8 A D A -Pulsed 30 Power Dissipation T = 25°C 78 P C W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R(cid:4)JC Thermal Resistance, Junction to Case 1.6 °C/W R(cid:4)JA Thermal Resistance, Junction to Ambient (Note 1a) 50 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS2734 FDMS2734 Power 56 13’’ 12mm 3000 units ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS2734 Rev.C1

F D Electrical Characteristics M T = 25°C unless otherwise noted J S Symbol Parameter Test Conditions Min Typ Max Units 2 7 3 Off Characteristics 4 BV Drain to Source Breakdown Voltage I = 250(cid:5)A, V = 0V 250 V N DSS D GS - (cid:6)BV Breakdown Voltage Temperature C (cid:2)(cid:2)(cid:2)(cid:6)TDSS Coefficient ID = 250(cid:5)A, referenced to 25°C 250 mV/°C h J a I Zero Gate Voltage Drain Current V = 200V, 1 (cid:5)A n DSS DS n IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA e l U On Characteristics (Note 2) l t VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250(cid:5)A 2 3 4 V ra (cid:2)(cid:6)VGS(th) Gate to Source Threshold Voltage I = 250(cid:5)A, referenced to 25°C -11 mV/°C FE (cid:2)(cid:2)(cid:2)(cid:6)TJ Temperature Coefficient D T V = 10V, I = 2.8A 105 122 T GS D r r Drain to Source On Resistance V = 6V, I = 1.7A 110 130 m(cid:3) e DS(on) GS D n VGS = 10V, ID = 2.8A TJ = 125°C 217 258 c h g Forward Transconductance V = 10V, I = 2.8A 11 S FS DS D ® M Dynamic Characteristics O Ciss Input Capacitance 1775 2365 pF S C Output Capacitance VDS = 100V, VGS = 0V, 80 110 pF F oss f = 1MHz E Crss Reverse Transfer Capacitance 25 40 pF T R Gate Resistance f = 1MHz 0.9 (cid:3) g Switching Characteristics t Turn-On Delay Time 22 36 ns d(on) V = 125V, I = 2.8A t Rise Time DD D 10 20 ns r V = 10V, R = 6(cid:3) t Turn-Off Delay Time GS GEN 36 58 ns d(off) t Fall Time 12 22 ns f Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 125V 30 42 nC Q Gate to Source Gate Charge I = 2.8A 7 nC gs D Q Gate to Drain “Miller” Charge 9 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0V, I = 2.8A (Note 2) 0.75 1.20 V SD GS S t Reverse Recovery Time 79 119 ns rr I = 2.8A, di/dt = 100A/(cid:5)s Q Reverse Recovery Charge F 214 321 nC rr Notes: 1: R(cid:4)JA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R(cid:4)JC is guaranteed by design while R(cid:4)CA is determined by the user's board design. a. 50°C/W when mounted on b. 125°C/W when mounted on a a 1 in2 pad of 2 oz copper minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300(cid:5)s, Duty cycle < 2.0%. FDMS2734 Rev.C1 2 www.fairchildsemi.com

F D Typical Characteristics M T = 25°C unless otherwise noted J S 2 7 3 30 2.2 4 PULSE DURATION = 80(cid:5)s CE PULSE DURATION = 80(cid:5)s N URRENT (A)122505 DUTY CYCLE =V G0.S5 %= M 10AVX VVGGSS = = 6 5VV ALIZEDE ON-RESISTAN 112...680 VGS = 4.5V DUTY CYCVGLSE == 50V.5%MAX -Channe N C ORM URC 1.4 VGS = 6V l U DRAI10 VGS = 4.5V NO SO 1.2 ltra I, D 5 AIN T 1.0 VGS = 10V FE 0 DR 0.8 T 0 1 2 3 4 5 0 5 10 15 20 25 30 T r VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CUR RENT(A) en Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance c vs Drain Current and Gate Voltage h ® M 2.4 400 O TANCE22..02 VIDG S= =2 .180AV )(cid:3)m ID = 7A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80A(cid:5)Xs SFE ALIZEDE ON-RESIS111...468 RAIN TO (SISTANCE 234200 TJ = 150oC T NORM N TO SOURC0011....6802 r, DDS(on) URCE ON-RE160 TJ = 25oC AI O R0.4 S 80 D -75 -50 -25 0 25 50 75 100 125 150 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOUR CE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 16 20 PULSE DURATION = 80(cid:5)s A) 10 VGS = 0V NT (A) 12 DUTY CYCLE = 0.5%MAX ENT ( RE TJ = 150oC RR 1 TJ = -55oC CUR 8 TJ = -55oC N CU TJ = 150oC N AI 0.1 , DRAID 4 TJ = 25oC RSE DR0.01 TJ = 25oC I E V E R 0 , S1E-3 I 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS2734 Rev.C1 3 www.fairchildsemi.com

F D Typical Characteristics M T = 25°C unless otherwise noted J S 2 7 10 3000 3 V) 4 AGE( 8 1000 Ciss N-C T E VOL 6 VDD =75V VDD = 125V E (pF) Coss han C C n SOUR 4 VDD = 175V CITAN 100 el U ATE TO 2 CAPA f = 1MHz Crss ltraF G E , GS 0 10 VGS = 0V T V 0 8 16 24 32 0.1 1 10 100 T r Qg, GATE CH ARGE(nC) VDS, DRAIN TO SO URCE VOLTAGE (V) e n Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain c to Source Voltage h ® M 4 15 O S NT(A) 3 A) 12 VGS = 10V FET RE T ( ANCHE CUR 2 TJ = 125oC TJ = 25oC AIN CURREN 69 VGS = 6V L R A D 3 , AVS I, D R(cid:4)JC = 1.6oC/W A I 1 0 0.01 0.1 0.5 25 50 75 100 125 150 tAV, TIME IN AV ALANCHE(ms) TC, CASE TEMPE RATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 40 3000 10 W)1000 FOR TEMPERATURES AIN CURRENT (A) 0.11 TLIHMISIT AERDE BAY I SrD S(on) 111 00m0 m smss ANSIENT POWER ( 10100 VGS = 10V ACUBI =RO RVI2EE5 N2T5 oAC1--S- -5-D- -F0-1-E--O2-–-R-5-L-T-A--L-A-T-OT--EAW P=SE 2:A5KoC I, DRD00.0.0011 RSTTJAI(cid:4)N J ==AG M2=L5 AE1 Xo 2PC 5RU oALCST/WEED D110 Cs s , PEAK TR)K 1 SINGLE PULSE 0.1 1 10 100 1000 P(P 0.1 10-3 10-2 10-1 100 101 102 103 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation FDMS2734 Rev.C1 4 www.fairchildsemi.com

F D Typical Characteristics M T = 25°C unless otherwise noted J S 2 7 2 3 1 DUTY CYCLE-DESCENDING ORDER 4 N L D = 0.5 -C A 0.2 D THERMNCE, Z(cid:4)JA 0.1 0000....1000521 PDM hanne LIZEEDA0.01 l U MAMP t1 lt ORI1E-3 t2 ra N NOTES: F DUTY FACTOR: D = t1/t2 E SINGLE PULSE PEAK TJ = PDM x Z(cid:4)JA x R(cid:4)JA + TA T 1E-4 T 10-3 10-2 10-1 100 101 102 103 re n t, RECTANGULAR PULSE DURATION (s) c Figure 13. Transient Thermal Response Curve h ® M O S F E T FDMS2734 Rev.C1 5 www.fairchildsemi.com

F D M S 2 7 3 4 N - C h a n n e l U l t r a F E T T r e n c h ® M O S F E T FDMS2734 Rev.C1 6 www.fairchildsemi.com

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C AccuPower™ F-PFS™ PowerTrench® The Power Franchise® h a Auto-SPM™ FRFET® PowerXS™ The Right Technology for Your Success™ n Build it Now™ Global Power ResourceSM Programmable Active Droop™ ® n CorePLUS™ Green FPS™ QFET® e CCoRrOePSOSVWOELRT™™ GGrmeaexn™ FPS™ e-Series™ QQSui™et Series™ TinyBoost™tm l U CCDTuErLUr™eXnPt ETEraDn®sfer Logic™ GIISnTtOeOlPli™MLAANXA™R™ R a p id™Configure™ TTTTiiiInnnNyyyYBCLOouagPclcikTc™™®O™ ItraF Dual Cool™ MegaBuck™ Saving our world, 1mW/W/kW at a time™ E EcoSPARK® MICROCOUPLER™ SignalWise™ TinyPower™ T TinyPWM™ EfficentMax™ MicroFET™ SmartMax™ TinyWire™ T EFaSiBrcCtmh®™ild® MMMMoiiiclclterriooorDnPPMraaikvka™e2x™™™ SSSSPTuMpEMAeA®RrLFTTE HSTT™®ART™ TT(cid:5)SRriFeUarEDuCelt sUD™ReRteEcNt™T™* rench Fairchild Semiconductor® Motion-SPM™ SuperSOT™-3 ® FFAACCTT ®Quiet Series™ OOpPtTiHOiTLO™GIC® SSuuppeerrSSOOTT™™--68 UHC® M FAST® OPTOPLANAR® SupreMOS® Ultra FRFET™ O FastvCore™ ® SyncFET™ UniFET™ S FETBench™ Sync-Lock™ VCX™ F FlashWriter® * PDPtm SPM™ ®* VXiSs™ualMax™ E FPS™ Power-SPM™ T *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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