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  • 型号: FDMC86244
  • 制造商: Fairchild Semiconductor
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FDMC86244产品简介:

ICGOO电子元器件商城为您提供FDMC86244由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FDMC86244价格参考。Fairchild SemiconductorFDMC86244封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 150V 2.8A(Ta),9.4A(Tc) 2.3W(Ta),26W(Tc) 8-MLP(3.3x3.3)。您可以下载FDMC86244参考资料、Datasheet数据手册功能说明书,资料中有FDMC86244 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 150V 2.8A POWER33MOSFET 150V N-Channel PowerTrench MOSFET

产品分类

FET - 单分离式半导体

FET功能

逻辑电平门

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

15 A

Id-连续漏极电流

15 A

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Fairchild Semiconductor FDMC86244PowerTrench®

数据手册

点击此处下载产品Datasheet

产品型号

FDMC86244

Pd-PowerDissipation

26 W

Pd-功率耗散

26 W

Qg-GateCharge

2.4 nC, 4.2 nC

Qg-栅极电荷

2.4 nC, 4.2 nC

RdsOn-Drain-SourceResistance

134 mOhms

RdsOn-漏源导通电阻

134 mOhms

Vds-Drain-SourceBreakdownVoltage

150 V

Vds-漏源极击穿电压

150 V

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

345pF @ 75V

不同Vgs时的栅极电荷(Qg)

5.9nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

134 毫欧 @ 2.8A,10V

产品种类

MOSFET

供应商器件封装

8-MLP(3.3X3.3),Power33

其它名称

FDMC86244DKR

功率-最大值

2.3W

包装

Digi-Reel®

单位重量

180 mg

商标

Fairchild Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

8-PowerWDFN

封装/箱体

MLP-8 3.3x3.3

工厂包装数量

3000

晶体管极性

N-Channel

最大工作温度

+ 150 C

标准包装

1

正向跨导-最小值

8 S

漏源极电压(Vdss)

150V

电流-连续漏极(Id)(25°C时)

2.8A (Ta), 9.4A (Tc)

系列

FDMC86244

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M C 8 November 2013 6 2 FDMC86244 4 4 ® N N-Channel Shielded Gate PowerTrench MOSFET - C 150 V, 9.4 A, 134 mΩ h a Features General Description n n e (cid:132) Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild l Semiconductor‘s advanced PowerTrench® process that S (cid:132) Max r = 134 mΩ at V = 10 V, I = 2.8 A DS(on) GS D incorporates Shielded Gate technology. This process has been h i (cid:132) Max r = 186 mΩ at V = 6 V, I = 2.4 A optimized for the on-state resistance and yet maintain superior e DS(on) GS D l switching performance. d (cid:132) Low Profile - 1 mm max in Power 33 e d (cid:132) 100% UIL Tested G Application (cid:132) RoHS Compliant a t (cid:132) DC - DC Conversion e P o w e r T Top Bottom re n D D D D c 8 7 6 5 S D h ® M S D O S S D F E T G D 1 2 3 4 G S S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25°C 9.4 C I -Continuous T = 25°C (Note 1a) 2.8 A D A -Pulsed 12 E Single Pulse Avalanche Energy (Note 3) 12 mJ AS Power Dissipation T = 25°C 26 P C W D Power Dissipation T = 25°C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to + 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.7 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 125 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86244 FDMC86244 Power 33 13’’ 12 mm 3000 units ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC86244 Rev.C3

F D Electrical Characteristics T = 25 °C unless otherwise noted M J C Symbol Parameter Test Conditions Min Typ Max Units 8 6 Off Characteristics 2 4 BV Drain to Source Breakdown Voltage I = 250 μA, V = 0 V 150 V 4 DSS D GS N ΔBV Breakdown Voltage Temperature ΔTDSS Coefficient ID = 250 μA, referenced to 25 °C 106 mV/°C -C J h IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA a n I Gate to Source Leakage Current V = ±20 V, V = 0 V ±100 nA GSS GS DS n e On Characteristics l S V Gate to Source Threshold Voltage V = V , I = 250 μA 2 2.6 4 V h GS(th) GS DS D i ΔV Gate to Source Threshold Voltage e ΔTGS(th) Temperature Coefficient ID = 250 μA, referenced to 25 °C -9 mV/°C ld J e V = 10 V, I = 2.8 A 105 134 d GS D r Static Drain to Source On Resistance V = 6 V, I = 2.4 A 120 186 mΩ G DS(on) GS D a VGS = 10 V, ID = 2.8 A, TJ = 125 °C 199 254 te gFS Forward Transconductance VDD = 10 V, ID = 2.8 A 8 S P o Dynamic Characteristics w e Ciss Input Capacitance V = 75 V, V = 0 V, 257 345 pF rT Coss Output Capacitance f =D S1 MHz GS 32 45 pF re Crss Reverse Transfer Capacitance 1.8 5 pF n c h Switching Characteristics ® t Turn-On Delay Time 5.3 11 ns M d(on) tr Rise Time VDD = 75 V, ID = 2.8 A, 1.5 10 ns OS td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 9.9 20 ns F t Fall Time 2.3 10 ns E f T Q Total Gate Charge V = 0 V to 10 V 4.2 5.9 nC g(TOT) GS V = 75 V, Q Total Gate Charge V = 0 V to 5 V DD 2.4 3.4 g(TOT) GS I = 2.8 A Q Total Gate Charge D 1.1 nC gs Q Gate to Drain “Miller” Charge 1.0 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2.8 A (Note 2) 0.81 1.3 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 2 A (Note 2) 0.79 1.2 GS S t Reverse Recovery Time 48 76 ns rr I = 2.8 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 38 61 nC rr NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.53 °C/W when mounted on a b.125 °C/W when mounted on 1 in2 pad of 2 oz copper a minimum pad of 2 oz copper GDDSS FSFS GDDSS FSFS 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V. ©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMC86244 Rev.C3

F D Typical Characteristics M T = 25 °C unless otherwise noted J C 8 6 2 12 5 4 I, DRAIN CURRENT (A) D 369 VGS = 10 V VGSV =G 5S. 5=PD UUV6 LTVSYE C DYUCRLEA T=I O0.NV5 %GV=S G 8M S=0 A = 4μX .s 55 VV NORMALIZEDAIN TO SOURCE ON-RESISTANCE 1234 PUVLGSS E= D4 UVRATIOVNG =S =8 04 μ.5s VVGVSG =S 5= V6 V VVGGSS = = 5 1.50 VV 4 N-Channel Shield VGS = 4 V DR DUTY CYCLE = 0.5% MAX e 0 0 d 0 1 2 3 4 5 0 3 6 9 12 G VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURR ENT (A) a t e Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance P vs Drain Current and Gate Voltage o w e r T 2.4 500 r TANCE 22..02 VIDG =S 2=. 81 0A V ()mΩ400 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs ench NORMALIZED O SOURCE ON-RESIS 11111.....02468 rDRAIN TO ,DS(on)CE ON-RESISTANCE 230000 TJ = 12ID5 =o C2.8 A MOSFET® T 0.8 R100 AIN 0.6 SOU TJ = 25 oC R D 0.4 0 -75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 12 20 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs NT (A) 10 VGS = 0 V T (A) 9 VDS = 5 V URRE 1 TJ = 150 oC N C CURRE 6 TJ = 150 oC DRAIN 0.1 TJ = 25 oC AIN TJ = 25 oC RSE TJ = -55 oC R E , DD 3 REV 0.01 I TJ = -55 oC , S I 0 0.001 2 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMC86244 Rev.C3

F D Typical Characteristics T = 25 °C unless otherwise noted M J C 8 6 10 1000 2 4 GE (V) 8 ID = 2.8 A VDD = 50 V 4 N OLTA VDD = 75 V pF) 100 Ciss -Ch E TO SOURCE V 46 VDD = 100 V CAPACITANCE ( 10 Coss annel Sh GAT 2 f = 1 MHz ie V, GS 0 1 VGS = 0 V Crss lde 0 1 2 3 4 5 0.1 1 10 100 d Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) G a t e Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain P to Source Voltage o w e r 10 10 T r ENT (A) 8 TJ = 25 oC NT (A) 8 VGS = 10R θVJC = 4.7 oC/W ench® HE CURR 6 TJ = 100 oC N CURRE 6 VGS = 6 V MOS AVALANC 4 TJ = 125 oC , IDRAID 24 FET , AS 2 I 1 0 0.001 0.01 0.1 1 2 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 20 1000 10 W) 100 μs R ( A) WE T ( 1 O 100 REN 1 ms NT P AIN CUR 0.1 TLIHMISIT AERDE BAY I SrD S(on) 11000 m mss RANSIE 10 I, DRD0.01 STRTJAIθN J ==AG M2=L5 AE1 Xo 2PC 5RU oALCST/WEED D110 Cs s , PEAK T)PK 1 TSRAIθNJ =AG 2=L5 E1 o 2PC5U oLCS/WE 0.001 P( 0.5 0.1 1 10 100 500 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WI DTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMC86244 Rev.C3

F D Typical Characteristics T = 25 °C unless otherwise noted M J C 8 6 2 4 4 2 N 1 DUTY CYCLE-DESCENDING ORDER -C h L a A n ALIZED THERM ZPEDANCE,JAθ 0.1 D = 000000......521000521 PDM t1t2 nel Shie RMIM 0.01 SINGLE PULSE NOTES: ld NO RθJA = 125 oC/W DPEUATYK FTAJ C= TPODRM: xD Z =θ JtA1 /xt2 RθJA + TA ed G a 0.001 te 10-4 10-3 10-2 10-1 1 10 100 1000 P t, RECTANGULAR PULSE DURATION (sec) o w e Figure 13. Junction-to-Ambient Transient Thermal Response Curve r T r e n c h ® M O S F E T ©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMC86244 Rev.C3

None

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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