STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Ω N-channel 650 V, 0.198 typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB V @ R Order code DSS DS(on) I T max D Jmax 3 2 STF18N65M5 123 1 TO-220FP STI18N65M5 I²PAK 710 V < 0.22 Ω 15 A STP18N65M5 TAB STW18N65M5 ■ Worldwide best R * area DS(on) 3 ■ Higher V rating and high dv/dt capability 3 2 DSS 1 2 1 ■ Excellent switching performance TO-247 TO-220 ■ 100% avalanche tested Figure 1. Internal schematic diagram Applications ■ Switching applications (cid:36)(cid:8)(cid:18)(cid:12)(cid:0)(cid:52)(cid:33)(cid:34)(cid:9) Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative (cid:39)(cid:8)(cid:17)(cid:9) proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The (cid:51)(cid:8)(cid:19)(cid:9) resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STF18N65M5 TO-220FP STI18N65M5 I²PAK 18N65M5 Tube STP18N65M5 TO-220 STW18N65M5 TO-247 July 2012 Doc ID 022879 Rev 3 1/19 This is information on a product in full production. www.st.com 19

Contents STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical ratings 1 Electrical ratings T a ble 2. Absolute maximum ratings Value Symbol Parameter Unit I²PAK TO-220 TO-247 TO-220FP V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 15 15 (1) A D C I Drain current (continuous) at T = 100 °C 9.4 9.4 (1) A D C I (1) Drain current (pulsed) 60 60 (1) A DM P Total dissipation at T = 25 °C 110 25 W TOT C dv/dt (2) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from V all three leads to external heat sink 2500 V ISO (t = 1 s; TC = 25 °C) T Storage temperature - 55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited by maximum junction temperature. 2. I ≤ 15 A, di/dt ≤ 400 A/µs; V < V , V = 400 V SD DSPeak (BR)DSS DD Table 3. Thermal data Value Symbol Parameter Unit I²PAK TO-220 TO-247 TO-220FP R Thermal resistance junction-case max 1.14 5 °C/W thj-case R Thermal resistance junction-ambient max 62.5 50 62.5 °C/W thj-amb T able 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetetive or not repetetive I 4 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 210 mJ AS (starting T = 25 °C, I = I ; V = 50 V) J D AR DD Doc ID 022879 Rev 3 3/19

Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 650 V (BR)DSS breakdown voltage D GS Zero gate voltage V = 650 V 1 µA I DS DSS drain current (V = 0) V = 650 V, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V ± 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source R V = 10 V, I = 7.5 A 0.198 0.22 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 1240 pF Ciss Output capacitance VDS = 100 V, f = 1 MHz, - 32 - pF Coss Reverse transfer VGS = 0 3.2 pF rss capacitance Equivalent C (1) capacitance time - 99 - pF o(tr) related V = 0 to 520 V, V = 0 DS GS Equivalent C (2) capacitance energy - 30 - pF o(er) related Intrinsic gate R f = 1 MHz open drain - 3 - Ω G resistance Q Total gate charge V = 520 V, I = 7.5 A, 31 nC g DD D Q Gate-source charge V = 10 V - 8 - nC gs GS Q Gate-drain charge (see Figure20) 14 nC gd 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C when oss V increases from 0 to 80% V DS DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V increases from 0 to 80% V DS DSS 4/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(V) Voltage delay time VDD = 400 V, ID = 9.5 A, 36 ns tr(V) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 7 - ns tf(i) Current fall time (see Figure21 and 9 ns t Crossing time Figure24) 11 ns c(off) Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 15 A SD - I (1) Source-drain current (pulsed) 60 A SDM V (2) Forward on voltage I = 15 A, V = 0 - 1.5 V SD SD GS t Reverse recovery time 290 ns rr I = 15 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 3.4 µC rr V = 100 V (see Figure24) I Reverse recovery current DD 23.5 A RRM t Reverse recovery time I = 15 A, di/dt = 100 A/µs 352 ns rr SD Q Reverse recovery charge V = 100 V, T = 150 °C - 4 µC rr DD j I Reverse recovery current (see Figure24) 24 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022879 Rev 3 5/19

Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for I²PAK and Figure 3. Thermal impedance for I²PAK and TO-220 TO-220 ID AM12487v1 (A) 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11000µµss Li 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area TO220FP Figure 5. Thermal impedance for TO-220FP ID AM12488v1 (A) 101 OpeLriatmiitoen id n bty hism aarx eRa iDsS(on) 11000µµss 1ms Tj=150°C 10ms 0.1 Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area TO-247 Figure 7. Thermal impedance TO-247 ID AM12489v1 (A) 10 Operatimiotne idn tbyhi s maarx eaR iDsS(on) 11000µµss Li 1 Tj=150°C 1ms Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) 6/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM12472v1 AM12486v1 ID ID (A) (A) VGS= 9, 10 V 35 35 VDS= 25 V 30 30 VGS= 8 V 25 25 20 20 15 VGS= 7 V 15 10 10 VGS= 6 V 5 5 0 0 0 5 10 15 20 VDS(V) 3 4 5 6 7 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance VGS AM12474v1 RDS(on) AM12475v1 (V) VDS (Ω) VDD=520V (V) 0.24 12 VDS ID=7.5A 500 VGS=10V 0.23 10 400 0.22 8 0.21 300 6 0.2 200 0.19 4 0.18 100 2 0.17 0 0 0.16 0 5 10 15 20 25 30 Qg(nC) 0 2 4 6 8 10 12 14 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM12476v1 Eoss AM12484v1 (pF) (µJ) 6 10000 5 1000 Ciss 4 3 100 2 Coss 10 1 Crss 1 0 0.1 1 10 100 VDS(V) 0 200 400 600 VDS(V) Doc ID 022879 Rev 3 7/19

Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature VGS(th) AM12471v1 RDS(on) AM12483v1 (norm) (norm) 1.10 2.1 ID = 250 µA VGS= 10V VDS = VGS 1.9 ID= 17.5 A 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Drain-source diode forward Figure 17. Normalized B vs temperature VDSS characteristics VSD AM05461v1 VDS AM10399v1 (V) (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0.94 0 0.92 0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C) Figure 18. Switching losses vs gate resistance (1) AM12485v1 E(μJ) 160 VVDGDS==41000VV Eon 140 ID=9.5A 120 100 80 60 Eoff 40 20 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load (cid:54)(cid:36)(cid:36) (cid:17)(cid:18)(cid:54) (cid:20)(cid:23)(cid:75) (cid:17)(cid:75) (cid:17)(cid:16)(cid:16)(cid:78)(cid:38) (cid:50)(cid:44) (cid:18)(cid:18)(cid:16)(cid:16) (cid:19)(cid:14)(cid:19) (cid:38) (cid:38) (cid:54)(cid:36)(cid:36) (cid:41)(cid:39)(cid:29)(cid:35)(cid:47)(cid:46)(cid:51)(cid:52) (cid:54)(cid:36) (cid:54)(cid:73)(cid:29)(cid:18)(cid:16)(cid:54)(cid:29)(cid:54)(cid:39)(cid:45)(cid:33)(cid:56) (cid:17)(cid:16)(cid:16) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:54)(cid:39)(cid:51) (cid:18)(cid:18)(cid:16)(cid:16) (cid:50)(cid:39) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:38) (cid:18)(cid:14)(cid:23)(cid:75) (cid:54)(cid:39) (cid:48)(cid:55) (cid:20)(cid:23)(cid:75) (cid:17)(cid:75) (cid:48)(cid:55) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:22)(cid:24)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:22)(cid:25)(cid:86)(cid:17) Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit (cid:44) (cid:33) (cid:33) (cid:33) (cid:36) (cid:38)(cid:33)(cid:51)(cid:52) (cid:44)(cid:29)(cid:17)(cid:16)(cid:16) (cid:40) (cid:54)(cid:36) (cid:39) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:36)(cid:41)(cid:47)(cid:36)(cid:37) (cid:18)(cid:18)(cid:16)(cid:16) (cid:19)(cid:14)(cid:19) (cid:38) (cid:38) (cid:54)(cid:36)(cid:36) (cid:51) (cid:34) (cid:19)(cid:14)(cid:19) (cid:17)(cid:16)(cid:16)(cid:16) (cid:34) (cid:34) (cid:38) (cid:38) (cid:18)(cid:21) (cid:36) (cid:54)(cid:36)(cid:36) (cid:41)(cid:36) (cid:39) (cid:50)(cid:39) (cid:51) (cid:54)(cid:73) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:48)(cid:87) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:16)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:17)(cid:86)(cid:17) Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform (cid:54)(cid:8)(cid:34)(cid:50)(cid:9)(cid:36)(cid:51)(cid:51) Concept waveform for Inductive Load Turn-off Id (cid:54)(cid:36) 90%Vds 90%Id Tdelay--ooffff (cid:41)(cid:36)(cid:45) Vgs 90%Vgs oonn (cid:41)(cid:36) Vgs(I(t)))) (cid:54)(cid:36)(cid:36) (cid:54)(cid:36)(cid:36) 10%Vds 10%Id Vds TTrriissee TTffaallll (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:18)(cid:86)(cid:17) Tcross--over AM05540v2 Doc ID 022879 Rev 3 9/19

Package mechanical data STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 10/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data Figure 25. TO-220FP drawing 7012510_Rev_K_B Doc ID 022879 Rev 3 11/19

Package mechanical data STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 12/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 022879 Rev 3 13/19

Package mechanical data STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 022879 Rev 3 15/19

Package mechanical data STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 16/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data Figure 28. TO-247 drawing 0075325_G Doc ID 022879 Rev 3 17/19

Revision history STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 5 Revision history T able 13. Document revision history Date Revision Changes 01-Mar-2012 1 First release. The part numbers STB18N65M5 and STD18N65M5 have been moved to a separate datasheet. The part numbers STI18N65M5 and STW18N65M5 in I²PAK and 11-Jul-2012 2 TO-247 packages have been added. Document status promoted from preliminary data to production data. Added Section2.1: Electrical characteristics (curves). Updated Figure8: Output characteristics, Figure11: Static drain- 19-Jul-2012 3 source on-resistance and Figure14: Normalized gate threshold voltage vs temperature. 18/19 Doc ID 022879 Rev 3

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