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  • 型号: SI4943CDY-T1-GE3
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SI4943CDY-T1-GE3产品简介:

ICGOO电子元器件商城为您提供SI4943CDY-T1-GE3由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SI4943CDY-T1-GE3价格参考¥7.79-¥21.08。VishaySI4943CDY-T1-GE3封装/规格:晶体管 - FET,MOSFET - 阵列, 2 个 P 沟道(双) Mosfet 阵列 20V 8A 3.1W 表面贴装 8-SO。您可以下载SI4943CDY-T1-GE3参考资料、Datasheet数据手册功能说明书,资料中有SI4943CDY-T1-GE3 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET 2P-CH 20V 8A 8-SOICMOSFET 20V 8.0A 3.1W 19.2mohm @ 10V

产品分类

FET - 阵列分离式半导体

FET功能

逻辑电平门

FET类型

2 个 P 沟道(双)

Id-ContinuousDrainCurrent

8 A

Id-连续漏极电流

8 A

品牌

Vishay / SiliconixVishay Siliconix

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Vishay / Siliconix SI4943CDY-T1-GE3TrenchFET®

数据手册

点击此处下载产品Datasheet

产品型号

SI4943CDY-T1-GE3SI4943CDY-T1-GE3

Pd-PowerDissipation

2 W

Pd-功率耗散

2 W

RdsOn-Drain-SourceResistance

19.2 mOhms

RdsOn-漏源导通电阻

19.2 mOhms

Vds-Drain-SourceBreakdownVoltage

20 V

Vds-漏源极击穿电压

- 20 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

上升时间

11 ns, 71 ns

下降时间

10 ns, 15 ns

不同Id时的Vgs(th)(最大值)

3V @ 250µA

不同Vds时的输入电容(Ciss)

1945pF @ 10V

不同Vgs时的栅极电荷(Qg)

62nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

19.2 毫欧 @ 8.3A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

8-SO

其它名称

SI4943CDY-T1-GE3TR
SI4943CDYT1GE3

典型关闭延迟时间

35 ns, 29 ns

功率-最大值

3.1W

包装

带卷 (TR)

商标

Vishay / Siliconix

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻

19.2 mOhms

封装

Reel

封装/外壳

8-SOIC(0.154",3.90mm 宽)

封装/箱体

SOIC-8 Narrow

工厂包装数量

2500

晶体管极性

P-Channel

最大工作温度

+ 150 C

最小工作温度

- 50 C

标准包装

2,500

汲极/源极击穿电压

20 V

漏极连续电流

8 A

漏源极电压(Vdss)

20V

电流-连续漏极(Id)(25°C时)

8A

通道模式

Enhancement

配置

Dual

零件号别名

SI4943CDY-GE3

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PDF Datasheet 数据手册内容提取

New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a, e Qg (Typ.) Definition 0.0192 at V = - 10 V - 8 (cid:129) TrenchFET® Power MOSFET GS - 20 20 0.0330 at VGS = - 4.5 V - 8 (cid:129) 100 % Rg and UIS Tested (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Load Switching - Computer SO-8 - Game Systems S1 S2 S1 1 8 D1 (cid:129) Battery Switching - 2-Cell Li-Ion G 1 2 7 D1 S2 3 6 D2 G1 G2 G 2 4 5 D2 Top View Ordering Information: Si4943CDY-T1-E3 (Lead (Pb)-free) D1 D2 Si4943CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 20 T = 25 °C - 8e C T = 70 °C - 8e Continuous Drain Current (T = 150 °C) C I J T = 25 °C D - 8b, c, e A T = 70 °C - 6.7b, c A Pulsed Drain Current (10 µs Pulse Width) IDM - 30 A T = 25 °C - 2.5 Source-Drain Current Diode Current TC = 25 °C IS - 1.7b, c A Pulsed Sorce-Drain Current ISM - 30 Single Pulse Avalanche Current IAS - 11 L = 0.1 mH Single-Pulse Avalanche Energy EAS 6 mJ T = 25 °C 3.1 C T = 70 °C 2 Maximum Power Dissipation TC = 25 °C PD 2b, c W A TA = 70 °C 1.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C THERMAL RESISTANCE RATINGS Limit Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 50 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. e. Package Limited. Document Number: 69985 www.vishay.com S09-0704-Rev. B, 27-Apr-09 1

New Product Si4943CDY Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VVGDSS (tThe) mTepmerpaeturaretu Creo Cefofiecfifeicnitent ΔVΔVGSD(Sth/T)/JTJ ID = - 250 µA -5 2.41 mV/°C Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - 100 nA Zero Gate Voltage Drain Current IDSS VDS =V -D 2S0 = V -, V20G SV ,= V 0G VS, =T J0 =V 5 5 °C -- 1 10 µA On-State Drain Currentb ID(on) VDS = 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistanceb RDS(on) VVGGSS == -- 41.05 VV,, IIDD == -- 86..34 AA 00..00126705 00..00139320 Ω Forward Transconductanceb gfs VDS = - 10 V, ID = - 8.3 A 19 S Dynamica Input Capacitance Ciss 1945 Output Capacitance Coss VDS = - 10 V, VGS = 0 V, f = 1 MHz 460 pF Reverse Transfer Capacitance Crss 385 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 8.3 A 41 62 20 30 nC Gate-Source Charge Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 8.3 A 7 Gate-Drain Charge Qgd 9 Gate Resistance Rg f = 1 MHz 0.5 2.5 5 Ω Turn-On Delay Time td(on) 13 20 Rise Time tr VDD = - 10 V, RL = 1.5 Ω 11 17 Turn-Off Delay Time td(off) ID ≅ - 6.7 A, VGEN = - 10 V, Rg = 1 Ω 35 53 Fall Time tf 10 15 ns Turn-On Delay Time td(on) 50 75 Rise Time tr VDD = - 10 V, RL = 1.5 Ω 71 107 Turn-Off Delay Time td(off) ID ≅ - 6.7 A, VGEN = - 4.5 V, Rg = 1 Ω 29 44 Fall Time tf 15 23 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.5 A Pulse Diode Forward Currenta ISM - 30 Body Diode Voltage VSD IS = - 6.7 A - 0.77 - 1.2 V Body Diode Reverse Recovery Time trr 30 45 ns Body Diode Reverse Recovery Charge Qrr I = - 6.7 A, dI/dt = 100 A/µs, T = 25 °C 17 26 nC Reverse Recovery Fall Time ta F J 13 ns Reverse Recovery Rise Time tb 17 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69985 2 S09-0704-Rev. B, 27-Apr-09

New Product Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 8 VGS=10Vthru5V 24 6 (A) VGS=4V (A) ent 18 ent urr urr C C 4 Drain 12 Drain TC=125 °C - - D D I I 2 6 VGS=3V TC=25 °C VGS=2V 0 0 TC=-55 °C 0 1 2 3 4 5 0 1 2 3 4 VDS- Drain-to-SourceVoltage(V) VGS- Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.08 3000 2400 Ω) 0.06 - On-Resistance( 0.04 VGS=4.5V Capacitance(pF) 11280000 Ciss DS(on) 0.02 C - Coss R 600 VGS=10V Crss 0.00 0 0 5 10 15 20 25 30 0 4 8 12 16 20 ID-DrainCurrent(A) VDS-Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.5 ID=8.3A VGS=10V,ID=8.3A V) 8 ( e 1.3 g e a c olt VDS=10V an Gate-to-SourceV 46 VDS=16V - On-ResistDS(on)(Normalized) 1.1 VGS=4.5V,ID=6.4A - R 0.9 GS 2 V 0 0.7 0 10 20 30 40 - 50 - 25 0 25 50 75 100 125 150 Qg-TotalGateCharge(nC) TJ-JunctionTemperature(°C) On-Resistance vs. Junction Temperature Gate Charge Document Number: 69985 www.vishay.com S09-0704-Rev. B, 27-Apr-09 3

New Product Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.04 ID=8.3A Ω) 0.03 A) e( nt( 10 anc Curre Resist 0.02 TJ=125 °C ource TJ=150 °C TJ=25 °C - On- - SIS 1 RDS(on) 0.01 TJ=25 °C 0.1 0 0.0 0.3 0.6 0.9 1.2 0 4 8 12 16 20 VSD-Source-to-DrainVoltage(V) VGS-Gate-to-SourceVoltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.5 100 2.3 80 2.1 V) ID=250 µA W) 60 ( ( S(th) 1.9 wer G o V P 40 1.7 20 1.5 1.3 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ-Temperature(°C) Time(s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 10 (A) 1ms nt e urr 10ms C 1 n Drai 100ms - D 1s I 0.1 10s DC TA=25 °C BVDSS SinglePulse Limited 0.01 0.1 1 10 100 VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 69985 4 S09-0704-Rev. B, 27-Apr-09

New Product Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 9 A) ( nt e urr PackageLimited C 6 n ai Dr - D I 3 0 0 25 50 75 100 125 150 TC-CaseTemperature(°C) Current Derating* 4 1.5 1.2 3 W) W) 0.9 ( ( wer 2 wer Po Po 0.6 1 0.3 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC-CaseTemperature(°C) TA-AmbientTemperature(°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69985 www.vishay.com S09-0704-Rev. B, 27-Apr-09 5

New Product Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 Notes: eI edEffermal 0.1 0.05 PDM zh maliT t1 Nor 0.02 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=85 °C/W 3.TJM-TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 0.2 nt Transieance 0.1 00..015 ctivemped 0.02 eI Effmal eder zh 0.01 aliT m or SinglePulse N 0.001 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69985. www.vishay.com Document Number: 69985 6 S09-0704-Rev. B, 27-Apr-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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