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  • 型号: SI4174DY-T1-GE3
  • 制造商: Vishay
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SI4174DY-T1-GE3产品简介:

ICGOO电子元器件商城为您提供SI4174DY-T1-GE3由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SI4174DY-T1-GE3价格参考¥2.66-¥3.65。VishaySI4174DY-T1-GE3封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 30V 17A(Tc) 2.5W(Ta),5W(Tc) 8-SO。您可以下载SI4174DY-T1-GE3参考资料、Datasheet数据手册功能说明书,资料中有SI4174DY-T1-GE3 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

Ciss-输入电容

985 pF

描述

MOSFET N-CH 30V 17A 8-SOICMOSFET 30V 17A 5.0W

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

17 A

Id-连续漏极电流

17 A

品牌

Vishay / SiliconixVishay Siliconix

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Vishay / Siliconix SI4174DY-T1-GE3TrenchFET®

数据手册

点击此处下载产品Datasheet

产品型号

SI4174DY-T1-GE3SI4174DY-T1-GE3

Pd-PowerDissipation

2.5 W

Pd-功率耗散

2.5 W

Qg-栅极电荷

18 nC

RdsOn-Drain-SourceResistance

10.8 mOhms

RdsOn-漏源导通电阻

10.8 mOhms

Vds-Drain-SourceBreakdownVoltage

30 V

Vds-漏源极击穿电压

30 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

Vgsth-栅源极阈值电压

2.2 V

上升时间

12 ns

下降时间

9 ns

不同Id时的Vgs(th)(最大值)

2.2V @ 250µA

不同Vds时的输入电容(Ciss)

985pF @ 15V

不同Vgs时的栅极电荷(Qg)

27nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

9.5 毫欧 @ 10A,10V

产品种类

MOSFET

供应商器件封装

8-SO

其它名称

SI4174DY-T1-GE3-ND
SI4174DY-T1-GE3TR
SI4174DYT1GE3

典型关闭延迟时间

19 ns

功率-最大值

5W

包装

带卷 (TR)

商标

Vishay / Siliconix

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

8-SOIC(0.154",3.90mm 宽)

封装/箱体

SOIC-8 Narrow

工厂包装数量

2500

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

2,500

正向跨导-最小值

30 S

漏源极电压(Vdss)

30V

电流-连续漏极(Id)(25°C时)

17A (Tc)

通道模式

Enhancement

配置

Single Quad Drain Triple Source

零件号别名

SI4174DY-GE3

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PDF Datasheet 数据手册内容提取

New Product Si4174DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) (cid:129) TrenchFET® Power MOSFET 0.0095 at VGS = 10 V 17 (cid:129) 100 % Rg and UIS Tested 30 8 nC 0.013 at VGS = 4.5 V 14.5 APPLICATIONS (cid:129) Notebook CPU Core - High-Side Switch SO-8 D S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 TC = 25 °C 17 Continuous Drain Current (T = 150 °C) TC = 70 °C I 13.5 J TA = 25 °C D 12b, c TA = 70 °C 9.6b, c A Pulsed Drain Current IDM 50 Continuous Source-Drain Diode Current TTCA == 2255 °°CC IS 2.42.b5, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Avalanche Energy EAS 20 mJ TC = 25 °C 5 Maximum Power Dissipation TTCA == 2750 °°CC PD 2.35.b2, c W TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 20 25 Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68998 www.vishay.com S-82773-Rev. A, 17-Nov-08 1

New Product Si4174DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ 34 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 2.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A VGS = 10 V, ID = 10 A 0.0078 0.0095 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 7 A 0.0108 0.0130 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 30 S Dynamicb Input Capacitance Ciss 985 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 205 pF Reverse Transfer Capacitance Crss 76 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 18 27 8 12 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A 2.4 Gate-Drain Charge Qgd 2.3 Gate Resistance Rg f = 1 MHz 0.3 1.3 2.6 Ω Turn-On Delay Time td(on) 14 25 Rise Time tr VDD = 15 V, RL = 1.5 Ω 12 24 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 19 35 Fall Time tf 9 18 ns Turn-On Delay Time td(on) 8 16 Rise Time tr VDD = 15 V, RL = 1.5 Ω 10 20 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 16 30 Fall Time tf 9 18 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.5 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 3 A 0.76 1.1 V Body Diode Reverse Recovery Time trr 14 28 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC I = 10 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 6 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68998 2 S-82773-Rev. A, 17-Nov-08

New Product Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 8.0 VGS=10thru4V 40 6.4 Current(A) 30 VGS=3V Current(A) 4.8 - DrainID 20 - DrainID 3.2 TC=T1C25= °2C5 °C 10 1.6 TC=- 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.015 1300 Ciss Ω) 0.013 1040 ( stance 0.011 VGS=4.5V e(pF) 780 - On-ResiS(on) 0.009 VGS=10V C - Capacitanc 520 Coss D R 0.007 260 Crss 0.005 0 0 10 20 30 40 50 0 2.4 4.8 7.2 9.6 12 ID-DrainCurrent(A) VDS-Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID=10A ID=10A (V) 8 1.6 e ag ce VGS=10V e-to-SourceVolt 46 VDS=10V VDS=15V VDS=20V - On-Resistann)(Normalized) 11..24 VGS=4.5V - Gat RDS(o 1.0 S G 2 V 0.8 0 0.6 0.0 3.7 7.4 11.1 14.8 18.5 - 50 - 25 0 25 50 75 100 125 150 Qg-TotalGateCharge(nC) TJ-JunctionTemperature(°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68998 www.vishay.com S-82773-Rev. A, 17-Nov-08 3

New Product Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.05 ID=10A 10 0.04 TJ=150 °C Ω) (A) ce( urrent 1 TJ=25 °C sistan 0.03 C e Source 0.1 - On-R 0.02 - IS DS(on) TJ=125 °C 0.01 R 0.01 TJ=25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD-Source-to-DrainVoltage(V) VGS-Gate-to-SourceVoltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 80 0.2 64 V) 0 ( nce W) 48 a ( Vari - 0.2 ID=5mA wer GS(th) - 0.4 Po 32 V ID=250 µA 16 - 0.6 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ-Temperature(°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 10 A) ( nt 1ms e Curr 1 10ms n ai Dr 100ms - ID 1s 0.1 10s TA=25 °C SinglePulse DC BVDSSLimited 0.01 0.1 1 10 100 VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 68998 4 S-82773-Rev. A, 17-Nov-08

New Product Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 20 16 A) ( ent 12 urr C n ai Dr 8 - D I 4 0 0 25 50 75 100 125 150 TC-CaseTemperature(°C) Current Derating* 6.0 2.0 4.8 1.6 W) 3.6 W) 1.2 ( ( wer wer Po 2.4 Po 0.8 1.2 0.4 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC-CaseTemperature(°C) TA-AmbientTemperature(°C) Power, Junction-to-Ambient Power Derating, Junction-to-Foot * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68998 www.vishay.com S-82773-Rev. A, 17-Nov-08 5

New Product Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 DutyCycle=0.5 nt e Transiance 0.2 ectiveImped 0.1 Notes: edEffermal 0.1 0.05 PDM zh maliT t1 Nor 0.02 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=85 °C/W SinglePulse 3.TJM-TA=PDMZthJA(t) 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 eI Effmal 0.1 eder alizTh 0.05 m or N 0.02 SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68998. www.vishay.com Document Number: 68998 6 S-82773-Rev. A, 17-Nov-08

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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