PolarHVTM HiPerFET IXFK 64N60P V = 600 V DSS IXFX 64N60P I = 64 A Power MOSFET D25 ≤≤≤≤≤ ΩΩΩΩΩ R 96 m DS(on) ≤≤≤≤≤ N-Channel Enhancement Mode t 200 ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) V T = 25°C to 150°C 600 V DSS J V T = 25°C to 150°C; R = 1 MΩ 600 V DGR J GS V Continuous ±30 V GSS V Transient ±40 V GSM G I T = 25°C 64 A D S (TAB) D25 C I T = 25°C, pulse width limited by T 150 A DM C JM I T = 25°C 64 A PLUS247 (IXFX) AR C E T = 25°C 80 mJ AR C E T = 25°C 3.5 J AS C dv/dt I ≤ I , di/dt ≤ 100 A/µs, V ≤ V , 20 V/ns S DM DD DSS T ≤ 150°C, R = 2 Ω J G P T = 25°C 1040 W (TAB) D C T -55 ... +150 °C J T 150 °C JM G = Gate D = Drain T -55 ... +150 °C stg S = Source Tab = Drain T 1.6 mm (0.062 in.) from case for 10 s 300 °C L T Plastic body for 10 s 260 °C SOLD F Mounting force (PLUS247) 20..120/4.5..25 N/lb Features C M Mounting torque (TO-264) 1.13/10 Nm/lb.in. d l International standard packages Weight TO-264 10 g l Fast recovery diode PLUS247 6 g l Unclamped Inductive Switching (UIS) rated l Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25°C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 3 mA 600 V DSS GS D Advantages V V = V , I = 8 mA 3.0 5.0 V GS(th) DS GS D l Easy to mount IGSS VGS = ±30 VDC, VDS = 0 ±200 nA l Space savings I V = V 25 µA l High power density DSS DS DSS V = 0 V T = 125°C 1000 µA GS J R V = 10 V, I = 0.5 I , Note 1 96 mΩ DS(on) GS D D25 © 2006 IXYS All rights reserved DS99442E(01/06)

IXFK 64N60P IXFX 64N60P PLUS 247TM Outline Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. g V = 20 V; I = 0.5 I , Note 1 40 63 S fs DS D D25 C 12 nF iss C V = 0 V, V = 25 V, f = 1 MHz 1150 pF oss GS DS C 80 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I =0.5 I 23 ns r GS DS DSS D D25 t R = 1 Ω (External) 79 ns Terminals: 1 - Gate d(off) G 2 - Drain (Collector) t 24 ns 3 - Source (Emitter) f 4 - Drain (Collector) Dim. Millimeter Inches Q 200 nC g(on) Min. Max. Min. Max. Q V = 10 V, V = 0.5 V , I = 0.5 I 70 nC A 4.83 5.21 .190 .205 gs GS DS DSS D D25 A 2.29 2.54 .090 .100 Q 68 nC A1 1.91 2.16 .075 .085 gd 2 b 1.14 1.40 .045 .055 R 0.12 °C/W b 1.91 2.13 .075 .084 thJC 1 b 2.92 3.12 .115 .123 R 0.15 °C/W 2 thCS C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC Source-Drain Diode Characteristic Values L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 (T = 25°C, unless otherwise specified) J Q 5.59 6.20 .220 0.244 Symbol Test Conditions Min. Typ. Max. R 4.32 4.83 .170 .190 I V = 0 V 64 A TO-264 Outline S GS I Repetitive 150 A SM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t I = 25A, -di/dt = 100 A/µs 200 ns rr F Q V = 100V 0.6 µC RM R I 6.0 A RM Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Dim. Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXFK 64N60P IXFX 64N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 65 160 60 VGS = 10V VGS = 10V 8V 140 8V 55 7V 50 120 45 7V peres 3450 peres 100 m m 80 A 30 A I - D 25 6V I - D 60 20 6V 15 40 10 20 5 5V 5V 0 0 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 32A vs. @ 125ºC Junction Temperature 65 3.1 60 V G S = 1 70VV 2.8 VGS = 10V 55 50 2.5 d 45 e z 2.2 es 40 6V ali per 35 orm 1.9 I D = 64A m N - AD 2350 - on) 1.6 I D = 32A I 20 RDS( 1.3 15 5V 1 10 0.7 5 0 0.4 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 V - Volts T - Degrees Centigrade DS J Fig. 5. RDS(on) Normalized to ID = 32A vs. Fig. 6. Maximum Drain Current vs. Drain Current Case Temperature 3.2 70 3 VGS = 10V TJ = 125ºC 60 2.8 2.6 d 50 e z 2.4 ali es orm 2.2 per 40 N 2 m - on) 1.8 - AD 30 DS( 1.6 I R 20 1.4 1.2 TJ = 25ºC 10 1 0.8 0 0 20 40 60 80 100 120 140 160 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees Centigrade © 2006 IXYS All rights reserved

IXFK 64N60P IXFX 64N60P Fig. 7. Input Admittance Fig. 8. Transconductance 100 130 120 90 110 80 100 70 90 peres 60 emens 7800 T J = - 2450ººCC m 50 Si 125ºC I - AD 40 T J = - 1 422055ººCºCC g - f s 5600 30 40 30 20 20 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 10 20 30 40 50 60 70 80 90 100 V - Volts I - Amperes GS D Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 140 10 9 VDS = 300V 120 I D = 32A 8 I G = 10mA 100 7 eres 80 olts 6 p V Am - S 5 - S 60 VG 4 I TJ = 125ºC 40 3 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 140 160 180 200 V - Volts Q - NanoCoulombs SD G Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz TJ = 150ºC Ciss TC = 25ºC ads10,000 RDS(on) Limit ar acitance - PicoF 1,000 Coss I - AmperesD10100 2115m00µsµs p Ca 100 DC 10ms Crss 10 1 0 5 10 15 20 25 30 35 40 10 100 1000 VDS - Volts VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 13. Maximum Transient Thermal Resistance 1.000 W 0.100 C / - º C J h) R(t 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2006 IXYS All rights reserved

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