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F Q A 9 0 N May 2014 1 5 FQA90N15 — N N-Channel QFET® MOSFET -C h 150 V, 90 A, 18 mΩ a n Features Description n e • RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A These N-Channel enhancement mode power field effect l Q • LowGate Charge(Typ.220 nC) transistors are produced using Fairchild’s proprietary, planar F stripe, DMOS technology. E • Low Crss (Typ.200 pF) T • 100% Avalanche Tested mThinisim aizdev anocne-dst atteec hnreosloisgtay nchea,s pbreoevnid ee spseucpiearlliyo r tasilworitecdh intgo M® • 175°C Maximum Junction Memperature Rating performance, and withstand high energy pulse in the avalanche O and commutation mode. These devices are well suited for low S voltage applications such as audio amplifier, high efficiency F E switching for DC/DC converters, and DC motor control, T uninterrupted power supply. D G G D TO-3PN S S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQA90N15 Unit V Drain-Source Voltage 150 V DSS I Drain Current - Continuous (T = 25°C) 90 A D C - Continuous (T = 100°C) 63.5 A C I Drain Current - Pulsed (Note 1) 360 A DM V Gate-Source voltage ±25 V GSS E Single Pulsed Avalanche Energy (Note 2) 1400 mJ AS IAR Avalanche Current (Note 1) 90 A EAR Repetitive Avalanche Energy (Note 1) 37.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TC = 25°C) 375 W - Derate Above 25°C 2.5 W/°C T T Operating and Storage Temperature Range -55 to +175 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQA90N15 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.4 °C/W RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA90N15 Rev C2

F Q Package Marking and Ordering Information A 9 0 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity N FQA90N15 FQA90N15 TO-3PN Tube N/A N/A 30 units 1 5 — Electrical Characteristics TC = 25°C unless otherwise noted. N - C Symbol Parameter Conditions Min. Typ. Max Units h a Off Characteristics n n BV Drain-Source Breakdown Voltage V = 0V, I = 250μA 150 -- -- V DSS GS D e l ΔBVDSS Breakdown Voltage Temperature I = 250μA, Referenced to 25°C -- 0.15 -- V/°C Q / ΔTJ Coefficient D F E I Zero Gate Voltage Drain Current V = 150V, V = 0V -- -- 1 μA DSS DS GS T VDS = 120V, TC = 150°C -- -- 10 μA ® M I Gate-Body Leakage Current, Forward V = 25V, V = 0V -- -- 100 nA GSSF GS DS O IGSSR Gate-Body Leakage Current, Reverse VGS = -25V, VDS = 0V -- -- -100 nA S F On Characteristics E T V Gate Threshold Voltage V = V , I = 250μA 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10V, I = 45A -- 0.014 0.018 Ω On-Resistance GS D g Forward Transconductance V = 40V, I = 45A -- 68 -- S FS DS D Dynamic Characteristics C Input Capacitance V = 25V, V = 0V, -- 6700 8700 pF iss DS GS f = 1.0MHz C Output Capacitance -- 1400 1800 pF oss C Reverse Transfer Capacitance -- 200 260 pF rss Switching Characteristics t Turn-On Delay Time V = 75V, I = 90A -- 105 220 ns d(on) DD D R = 25Ω t Turn-On Rise Time G -- 760 1500 ns r t Turn-Off Delay Time -- 470 950 ns d(off) t Turn-Off Fall Time (Note 4) -- 410 830 ns f Q Total Gate Charge V = 120V, I = 90A -- 220 285 nC g DS D V = 10V Q Gate-Source Charge GS -- 43 -- nC gs Q Gate-Drain Charge -- 110 -- nC gd (Note 4) Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 90 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 360 A SM V Drain-Source Diode Forward Voltage V = 0V, I = 90A -- -- 1.5 V SD GS S t Reverse Recovery Time V = 0V, I = 90A -- 175 -- ns rr GS S dI /dt =100A/μs Q Reverse Recovery Charge F -- 0.97 -- μC rr NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2.L = 0.29 mH, IAS = 90 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 90 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQA90N15 Rev C2

F Q Typical Performance Characteristics A 9 0 N 1 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 5 — Top : 1 5 .V0 GVS N 10.0 V 102 - 8.0 V C 102 76..00 VV A] h urrent [A] Bottom : 455...550 VVV Current [ 101 175oC anne I, Drain CD 101 Notes : I , Drain D 100 25oC -55oC Notes : l QFET 1. 250μs Pulse Test 1. VDS = 30V ® 2. T = 25oC 2. 250μs Pulse Test C M 10-1 100 101 10-12 4 6 8 10 O VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] SF E T Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current 0.12 R [],ΩDS(on)Source On-Resistance00..0069 VGS = 20VVGS = 10V verse Drain Current [A] 110012 Drain-0.03 I , ReDR 100 175oC25oC N1o. tVes : = 0V Note : TJ = 25oC 2. 25G0Sμs Pulse Test 0.000 50 100 150 200 250 300 10-10.0 0.4 0.8 1.2 1.6 2.0 2.4 ID , Drain Current [A] V , Source-Drain Voltage [V] SD Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 18000 12 C = C + C (C = shorted) iss gs gd ds C = C + C 15000 Corssss = Cgdds gd 10 VDS = 30V V] V = 75V e [ DS nce [pF] 192000000 CCoissss ce Voltag 68 VDS = 120V Capacita 6000 C Notes : ate-Sour 4 rss 1. V = 0 V G 3000 2. f =GS 1 MHz , GS 2 V Note : I = 90 A D 0 0 10-1 100 101 0 50 100 150 200 250 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] ©2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQA90N15 Rev C2

F Q Typical Performance Characteristics A (Continued) 9 0 N Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 1 5 vs. Temperature vs. Temperature — 1.2 3.0 N e - g C a BV, (Normalized)DSSDrain-Source Breakdown Volt 011...901 N 12o.. tVIeDG s=S : =2 500 V μA R, (Normalized)DS(ON)Drain-Source On-Resistance 01122.....50505 N12o.. tIVeDG s=S : =4 51 0A V hannel QFET MO® 0.8 0.0 S -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 F T, Junction Temperature [oC] T, Junction Temperature [oC] E J J T Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 100 103 Ois pLeimraittieodn biny TRh is Area DS(on) 80 10 μs urrent [A] 102 DC 10 ms1 ms 100 μs urrent [A] 60 C C ain 101 ain 40 Dr Dr I, D 100 N 1o. tTes =: 25 oC I, D 20 C 2. T = 175 oC J 3. Single Pulse 10-1 0 100 101 102 25 50 75 100 125 150 175 V , Drain-Source Voltage [V] T , Case Temperature [oC] DS C Figure 11. Transient Thermal Response Curve W] C/ oe [ D=0.5 s al Respon 10-1 00..12 N 231o... tDTZe?JusM Jt :yC-( TFt)Ca = c= t0 oP.r4D, MDo C*= /ZtW1?/t 2JMC(at)x. m 0.05 er Th 0.02 PDM Z(t), θJC 10-2 0.01 singlee puse t1t2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 ©2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQA90N15 Rev C2

F Q A 9 0 N 1 5 VV — GGSS SSaammee TTyyppee N 5500KKΩΩ aass DDUUTT QQ - gg C 1122VV 220000nnFF 330000nnFF 1100VV h a VV n VVGGSS DDSS QQ QQ n ggss ggdd e l Q F DDUUTT E IG = const. T ® M O CChhaarrggee S F E Figure 12. Gate Charge Test Circuit & Waveform T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV VV DDUUTT GGSS GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VVGGSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQA90N15 Rev C2

F Q A 9 0 N 1 5 DDUUTT ++ — N - VV C DDSS h a __ n n e l Q II SSDD F LLL E T ® M DDrriivveerr O S RR GG F SSaammee TTyyppee E aass DDUUTT VVDDDD T VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VV DDD ===------------------------------------------------------------------------------ GGSS GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD ddii//ddtt (( DDUUTT )) II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQA90N15 Rev C2

F Q Mechanical Dimensions A 9 0 N 1 5 — N - C h a n n e l Q F E T ® M O S F E T Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 ©2006 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQA90N15 Rev C2

F Q A 9 0 N 1 5 — TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not N intended to be an exhaustive list of all such trademarks. - C AccuPower™ F-PFS™ AX-CAP®* FRFET® ® ®* h BitSiC™ Global Power ResourceSM PowtmerTrench® TinyBoost® an Build it Now™ GreenBridge™ PowerXS™ TinyBuck® n CorePLUS™ Green FPS™ Programmable Active Droop™ e CCoRrOePSOSVWOELRT™™ GGrmeaexn™ FPS™ e-Series™ QQSFE™T® TTiinnyyCLoaglcic™® l Q TINYOPTO™ CTL™ GTO™ Quiet Series™ F Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TinyPower™ E DEUXPEED® ISOPLANAR™ ™ TinyPWM™ T Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ ® EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TranSiC™ M TriFault Detect™ EfficentMax™ MegaBuck™ SignalWise™ TRUECURRENT®* O ESBC™ MICROCOUPLER™ SmartMax™ μSerDes™ S ® MicroFET™ SMART START™ F MicroPak™ Solutions for Your Success™ E Fairchild® MicroPak2™ SPM® T Fairchild Semiconductor® MillerDrive™ STEALTH™ UHC® FACT Quiet Series™ MotionMax™ SuperFET® Ultra FRFET™ FACT® mWSaver® SuperSOT™-3 UniFET™ FAST® OptoHiT™ SuperSOT™-6 VCX™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VisualMax™ FETBench™ OPTOPLANAR® SupreMOS® VoltagePlus™ FPS™ SyncFET™ XS™ Sync-Lock™ 仙童™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I68 ©2006 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FQA90N15 Rev C2

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